For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LINEAR & POWER AMPLIFIERS - SMT
1
HMC590LP5 / 590LP5E
v02.0113
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
General Description
Features
Functional Diagram
The HMC590LP5 & HMC590LP5E are high dynamic
range GaAs pHEMT MMIC 1 Watt Power Ampliers
which operate from 6 to 9.5 GHz. The amplier pro-
vides 21 dB of gain, +31 dBm of saturated power,
and 23% PAE from a +7V supply. This 50 Ohm
matched amplier does not require any external
components and the RF I/Os are DC blocked for ro-
bust operation. For applications which require op-
timum OIP3, Idd should be set for 520 mA, to yield
+40 dBm OIP3. For applications which require
optimum output P1dB, Idd should be set for 820 mA,
to yield +30 dBm Output P1dB.
Electrical Specications, TA = +25° C, Vdd = +7V, Idd = 820 mA[1]
Typical Applications
The HMC590LP5 / HMC590LP5E is ideal for use as a
power amplier for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Test Equipment & Sensors
• Military End-Use
• Space
Parameter Min. Ty p. Max. Min. Typ. Max. Units
Frequency Range 6 - 8 6 - 9.5 GHz
Gain 18 21 18 21 dB
Gain Variation Over Temperature 0.05 0.05 dB/ °C
Input Return Loss 15 12 dB
Output Return Loss 11 10 dB
Output Power for 1 dB
Compression (P1dB) 27 30 27.5 30.5 dBm
Saturated Output Power (Psat) 30.5 31 dBm
Output Third Order Intercept (IP3)[2] 40 40 dBm
Supply Current (Idd) 820 820 mA
[1] Adjust Vgg between -2 to 0V to achieve Idd= 820 mA typical.
[2] Measurement taken at 7V @ 520mA, Pin/Tone = -15 dBm
Saturated Output Power: +31.5 dBm @ 23% PAE
Output IP3: +40 dBm
Gain: 21 dB
DC Supply: +7V @ 820 mA
50 Ohm Matched Input/Output
QFN Leadless SMT Packages, 25 mm2
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LINEAR & POWER AMPLIFIERS - SMT
2
HMC590LP5 / 590LP5E
v02.0113
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
P1dB vs. Temperature Psat vs. Temperature
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
456789101112
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
8
12
16
20
24
28
6 6.5 7 7.5 8 8.5 9 9.5 10
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
-35
-30
-25
-20
-15
-10
-5
0
456789101112
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
456789101112
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
25
27
29
31
33
35
6 6.5 7 7.5 8 8.5 9 9.5 10
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
25
27
29
31
33
35
6 6.5 7 7.5 8 8.5 9 9.5 10
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LINEAR & POWER AMPLIFIERS - SMT
3
HMC590LP5 / 590LP5E
v02.0113
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Power Compression @ 8 GHz,
7V @ 820 mA
Output IP3 vs. Temperature
7V @ 520 mA, Pin/Tone = -15 dBm
Output IM3, 7V @ 520 mA Output IM3, 7V @ 820 mA
Psat vs. CurrentP1dB vs. Current
25
27
29
31
33
35
6 6.5 7 7.5 8 8.5 9 9.5 10
520mA
620mA
720mA
820mA
P1dB (dBm)
FREQUENCY (GHz)
25
27
29
31
33
35
6 6.5 7 7.5 8 8.5 9 9.5 10
520mA
620mA
720mA
820mA
Psat (dBm)
FREQUENCY (GHz)
26
30
34
38
42
46
6 6.5 7 7.5 8 8.5 9 9.5 10
+25 C
+85 C
-40 C
IP3 (dBm)
FREQUENCY (GHz)
0
5
10
15
20
25
30
35
-14 -10 -6 -2 2 6 10 14
Pout
Gain
PAE
Pout(dBm), GAIN (dB), PAE(%)
INPUT POWER (dBm)
0
20
40
60
80
-20 -16 -12 -8 -4 0 4 8
6 GHz
7 GHz
8 GHz
9 GHz
10 GHz
IM3 (dBc)
Pin/Tone (dBm)
0
20
40
60
80
-20 -16 -12 -8 -4 0 4 8
6 GHz
7 GHz
8 GHz
9 GHz
10 GHz
IM3 (dBc)
Pin/Tone (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LINEAR & POWER AMPLIFIERS - SMT
4
HMC590LP5 / 590LP5E
v02.0113
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Reverse Isolation
vs. Temperature, 7V @ 820 mA Power Dissipation
Gain & Power vs. Supply Current @ 8 GHz Gain & Power vs. Supply Voltage @ 8 GHz
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +8 Vdc
Gate Bias Voltage (Vgg) -2.0 to 0 Vdc
RF Input Power (RFIN)(Vdd = +7.0 Vdc) +12 dBm
Channel Temperature 175 °C
Continuous Pdiss (T= 75 °C)
(derate 59.8 mW/°C above 75 °C) 5.98 W
Thermal Resistance
(channel to package bottom) 16.72 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
Vdd (V) Idd (mA)
+6.5 824
+7.0 820
+7.5 815
Typical Supply Current vs. Vdd
Note: Amplier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 820 mA at +7.0V
18
20
22
24
26
28
30
32
34
520 620 720 820
Gain
P1dB
Psat
GAIN (dB), P1dB (dBm), Psat(dBm)
Idd SUPPLY CURRENT (mA)
18
20
22
24
26
28
30
32
34
6.5 7 7.5
Gain
P1dB
Psat
GAIN (dB), P1dB (dBm), Psat(dBm)
Vdd SUPPLY VOLTAGE (Vdc)
-80
-70
-60
-50
-40
-30
-20
-10
0
6 6.5 7 7.5 8 8.5 9 9.5 10
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
3
3.5
4
4.5
5
5.5
6
-14 -10 -6 -2 2 6 10 14
6 GHz
7 GHz
8 GHz
9 GHz
10 GHz
POWER DISSIPATION (W)
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LINEAR & POWER AMPLIFIERS - SMT
5
HMC590LP5 / 590LP5E
v02.0113
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC590LP5 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H590
XXXX
HMC590LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H590
XXXX
[1] Max peak reow temperature of 235 °C
[2] Max peak reow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
Outline Drawing
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LINEAR & POWER AMPLIFIERS - SMT
6
HMC590LP5 / 590LP5E
v02.0113
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Pin Descriptions
Pin Number Function Description Interface Schematic
1, 2, 6 - 19,
23, 24, 26,
27, 29, 31
N/C Not connected.
3, 5, 20, 22 GND These pins and package bottom must
be connected to RF/DC ground.
4RFIN This pad is AC coupled and
matched to 50 Ohms.
21 RFOUT This pad is AC coupled and
matched to 50 Ohms.
25, 28, 30 Vdd 1-3 Power Supply Voltage for the amplier. External bypass
capacitors of 100 pF and 2.2 µF are required.
32 Vgg
Gate control for amplier. Adjust to achieve Idd of 820 mA.
Please follow “MMIC Amplier Biasing Procedure”
Application Note. External bypass capacitors of 100 pF and
2.2 µF are required.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LINEAR & POWER AMPLIFIERS - SMT
7
HMC590LP5 / 590LP5E
v02.0113
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Application Circuit
Component Value
C1 - C4 100pF
C5 - C8 2.2µF
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LINEAR & POWER AMPLIFIERS - SMT
8
HMC590LP5 / 590LP5E
v02.0113
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Evaluation PCB
The circuit board used in the nal application
should use RF circuit design techniques. Signal
lines should have 50 Ohm impedance while the
package ground leads and package bottom should
be connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
List of Materials for Evaluation PCB 115927 [1]
Item Description
J1 - J2 PCB Mount SMA Connector
J3 DC Pin
C1 - C4 100 pF Capacitor, 0402 Pkg
C5 - C8 2.2 µF Capacitor, 1206 Pkg
U1 HMC590LP5 / HMC590LP5E
PCB [2] 109001 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350