HMC590LP5 / 590LP5E v02.0113 LINEAR & POWER AMPLIFIERS - SMT GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Typical Applications Features The HMC590LP5 / HMC590LP5E is ideal for use as a power amplifier for: Saturated Output Power: +31.5 dBm @ 23% PAE * Point-to-Point Radios Gain: 21 dB * Point-to-Multi-Point Radios DC Supply: +7V @ 820 mA * Test Equipment & Sensors 50 Ohm Matched Input/Output * Military End-Use QFN Leadless SMT Packages, 25 mm2 Output IP3: +40 dBm * Space Functional Diagram General Description The HMC590LP5 & HMC590LP5E are high dynamic range GaAs pHEMT MMIC 1 Watt Power Amplifiers which operate from 6 to 9.5 GHz. The amplifier provides 21 dB of gain, +31 dBm of saturated power, and 23% PAE from a +7V supply. This 50 Ohm matched amplifier does not require any external components and the RF I/Os are DC blocked for robust operation. For applications which require optimum OIP3, Idd should be set for 520 mA, to yield +40 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 820 mA, to yield +30 dBm Output P1dB. Electrical Specifications, TA = +25 C, Vdd = +7V, Idd = 820 mA[1] Parameter Min. Frequency Range Typ. Max. Min. 6-8 Gain 18 Units GHz 21 dB 0.05 dB/ C Input Return Loss 15 12 dB Output Return Loss 11 10 dB 30.5 dBm 31 dBm 40 40 dBm 820 820 mA Output Power for 1 dB Compression (P1dB) 27 Saturated Output Power (Psat) Output Third Order Intercept (IP3) 30 30.5 [2] Supply Current (Idd) 18 Max. 0.05 Gain Variation Over Temperature 21 Typ. 6 - 9.5 27.5 [1] Adjust Vgg between -2 to 0V to achieve Idd= 820 mA typical. [2] Measurement taken at 7V @ 520mA, Pin/Tone = -15 dBm 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC590LP5 / 590LP5E v02.0113 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Broadband Gain & Return Loss Gain vs. Temperature 25 24 15 10 S21 S11 S22 5 GAIN (dB) RESPONSE (dB) 20 0 -5 20 16 -10 +25 C +85 C -40 C 12 -15 -20 -25 8 4 5 6 7 8 9 10 11 6 12 6.5 7 FREQUENCY (GHz) Input Return Loss vs. Temperature 8.5 9 9.5 10 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) 8 Output Return Loss vs. Temperature 0 -10 -15 -20 -25 +25 C +85 C -40 C -30 -10 -15 +25 C +85 C -40 C -20 -25 -35 4 5 6 7 8 9 10 11 12 4 5 6 P1dB vs. Temperature 8 9 10 11 12 9 9.5 10 Psat vs. Temperature 35 33 33 Psat (dBm) 35 31 29 +25 C +85 C -40 C 27 7 FREQUENCY (GHz) FREQUENCY (GHz) P1dB (dBm) 7.5 FREQUENCY (GHz) LINEAR & POWER AMPLIFIERS - SMT 28 30 31 29 +25 C +85 C -40 C 27 25 25 6 6.5 7 7.5 8 8.5 FREQUENCY (GHz) 9 9.5 10 6 6.5 7 7.5 8 8.5 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 2 HMC590LP5 / 590LP5E v02.0113 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz 35 33 33 Psat (dBm) P1dB (dBm) Psat vs. Current 35 31 29 520mA 620mA 720mA 820mA 27 31 29 520mA 620mA 720mA 820mA 27 25 25 6 6.5 7 7.5 8 8.5 9 9.5 10 6 6.5 7 7.5 FREQUENCY (GHz) 46 9 9.5 10 Pout(dBm), GAIN (dB), PAE(%) 35 42 38 34 +25 C +85 C -40 C 30 26 6 6.5 7 7.5 8 8.5 9 9.5 30 Pout Gain PAE 25 20 15 10 5 0 -14 10 -10 -6 60 60 IM3 (dBc) 80 40 0 -20 6 GHz 7 GHz 8 GHz 9 GHz 10 GHz -16 -12 -8 2 6 10 14 Output IM3, 7V @ 820 mA 80 20 -2 INPUT POWER (dBm) Output IM3, 7V @ 520 mA IM3 (dBc) 8.5 Power Compression @ 8 GHz, 7V @ 820 mA FREQUENCY (GHz) 6 GHz 7 GHz 8 GHz 9 GHz 10 GHz 40 20 -4 Pin/Tone (dBm) 3 8 FREQUENCY (GHz) Output IP3 vs. Temperature 7V @ 520 mA, Pin/Tone = -15 dBm IP3 (dBm) LINEAR & POWER AMPLIFIERS - SMT P1dB vs. Current 0 4 8 0 -20 -16 -12 -8 -4 0 4 8 Pin/Tone (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC590LP5 / 590LP5E v02.0113 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Gain & Power vs. Supply Current @ 8 GHz Gain & Power vs. Supply Voltage @ 8 GHz 32 30 28 26 Gain P1dB Psat 24 22 20 18 520 620 720 32 30 28 Gain P1dB Psat 26 24 22 20 18 6.5 820 7 Idd SUPPLY CURRENT (mA) Reverse Isolation vs. Temperature, 7V @ 820 mA Power Dissipation 6 0 -20 POWER DISSIPATION (W) -10 ISOLATION (dB) 7.5 Vdd SUPPLY VOLTAGE (Vdc) +25 C +85 C -40 C -30 -40 -50 -60 -70 -80 6 6.5 7 7.5 8 8.5 9 9.5 10 5.5 5 4.5 6 GHz 7 GHz 8 GHz 9 GHz 10 GHz 4 3.5 3 -14 -10 FREQUENCY (GHz) Absolute Maximum Ratings -6 -2 2 6 10 INPUT POWER (dBm) Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +8 Vdc Vdd (V) Idd (mA) Gate Bias Voltage (Vgg) -2.0 to 0 Vdc +6.5 824 RF Input Power (RFIN)(Vdd = +7.0 Vdc) +12 dBm +7.0 820 Channel Temperature 175 C +7.5 815 Continuous Pdiss (T= 75 C) (derate 59.8 mW/C above 75 C) 5.98 W Thermal Resistance (channel to package bottom) 16.72 C/W Storage Temperature -65 to +150 C Operating Temperature -55 to +85 C 14 LINEAR & POWER AMPLIFIERS - SMT 34 GAIN (dB), P1dB (dBm), Psat(dBm) GAIN (dB), P1dB (dBm), Psat(dBm) 34 Note: Amplifier will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 820 mA at +7.0V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 4 HMC590LP5 / 590LP5E v02.0113 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz LINEAR & POWER AMPLIFIERS - SMT Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC590LP5 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] HMC590LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] Package Marking [3] H590 XXXX H590 XXXX [1] Max peak reflow temperature of 235 C [2] Max peak reflow temperature of 260 C [3] 4-Digit lot number XXXX 5 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC590LP5 / 590LP5E v02.0113 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Pin Descriptions Function Description 1, 2, 6 - 19, 23, 24, 26, 27, 29, 31 N/C Not connected. 3, 5, 20, 22 GND These pins and package bottom must be connected to RF/DC ground. 4 RFIN This pad is AC coupled and matched to 50 Ohms. 21 RFOUT This pad is AC coupled and matched to 50 Ohms. 25, 28, 30 Vdd 1-3 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 2.2 F are required. 32 Vgg Gate control for amplifier. Adjust to achieve Idd of 820 mA. Please follow "MMIC Amplifier Biasing Procedure" Application Note. External bypass capacitors of 100 pF and 2.2 F are required. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com LINEAR & POWER AMPLIFIERS - SMT Pin Number 6 HMC590LP5 / 590LP5E v02.0113 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz LINEAR & POWER AMPLIFIERS - SMT Application Circuit 7 Component Value C1 - C4 100pF C5 - C8 2.2F For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC590LP5 / 590LP5E v02.0113 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz LINEAR & POWER AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 115927 Item Description J1 - J2 PCB Mount SMA Connector J3 DC Pin C1 - C4 100 pF Capacitor, 0402 Pkg C5 - C8 2.2 F Capacitor, 1206 Pkg U1 HMC590LP5 / HMC590LP5E PCB [2] 109001 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 [1] The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 8