〈Transistor〉
ＲＴ１Ｐ１４１Ｘ SERIES Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
DESCRIPTION OUTLINE DRAWING UNIT：mm
RT1P141U RT1P141C
RT1P141X is a one chip transistor
with built-in bias resistor,NPN type is RT1N141X.
FEATURE
・Built-in bias resistor (R1=10kΩ,R2=10kΩ).
APPLICATION
Inverted circuit,switching circuit,interface circuit,
driver circuit.
Equivalent circuit
JEITA：－
JEDEC：－
JEITA：SC-59
JEDEC：Similar to TO-236
Terminal Connector
①：Base
②：Emitter
③：Collector
Terminal Connector
①：Base
②：Emitter
③：Collector
RT1P141M RT1P141T
JEITA：SC-70
JEDEC：－
JEITA：－
JEDEC：－
RT1P141S
Terminal Connector
①：Base
②：Emitter
③：Collector
Terminal Connector
①：Base
②：Emitter
③：Collector
0.15
0～0.1
0.55
0.7
0.3
0.40.80.4
1.6
0.5 0.5
1.0
1.6
①
②③
0.16
0～0.1
0.8
1.1
0.4
0.51.50.5
2.5
0.95 0.95
1.90
2.9
①
② ③
0.15
0～0.1
0.7
0.9
0.3
1.25
0.425
2.1
0.65 0.65
1.3
2.0
①
②③
0.425
4.0
1.0
1.0
14.0 3.0
1.27 1.27
0.45
0.1
2.5
0.4
① ② ③
C
(OUT)
E
(GND)
B
(IN)
R1
R2
ISAHAYA ELECTRONICS CORPORATION
JEITA：－
JEDEC：－
①：Emitter
②：Collector
③：Base
0.45
0.25
0.2
0.8
0.2
0.4 0.4
0.8
1.2
①
②
③
〈Transistor〉
ＲＴ１Ｐ１４１Ｘ SERIES Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
MAXIMUM RATING (Ta=25℃)
RATING
SYMBOL PARAMETER RT1P141T RT1P141U RT1P141M RT1P141C RT1P141S UNIT
ＶＣＢＯ Collector to Base voltage -50 V
ＶＥＢＯ Emitter to Base voltage -10 V
ＶＣＥＯ Collector to Emitter voltage -50 V
Ｉ Ｃ
Collector current -100 mA
Ｉ ＣＭ
Peak Collector current -200 mA
ＰＣ Collector
dissipation(Ta=25℃) 125（※） 125 150 450 mW
Ｔｊ Junction temperature +125 +150 ℃
Ｔｓｔｇ Storage temperature -55～+125 -55～+150 ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃) （※ ） package mounted on 9mm×19mm×1mm glass-epoxy substrate.
LIMIT
SYMBOL PARAMETER TEST CONDITION MIN TYP MAX UNIT
Ｖ（ＢＲ）ＣＥＯ C to E break down voltage I C
=-100μA，RBE=∞ -50 V
Ｉ ＣＢＯ
Collector cut off current VCB=-50V，I E
=0 -0.1 μA
ｈＦＥ DC forward current gain VCE=-5V，I C
=-10mA 50 －
ＶＣＥ（ｓａｔ） C to E saturation voltage I C
=-10mA，I B
=-0.5mA -0.1 -0.3 V
ＶＩ（ＯＮ） Input on voltage VCE=-0.2V，I C
=-5mA -1.5 -3.0 V
ＶＩ（ＯＦＦ） Input off voltage VCE=-5V，I C
=-100μA -0.8 -1.1 V
Ｒ１ Input resistance 7.0 10 13 kΩ
Ｒ２／Ｒ１ Resistance ratio 0.9 1.0 1.1
ｆＴ Gain band width product VCE=-6V，I E
=10mA 150 MHz
TYPICAL CHARACTERISTICS
ISAHAYA ELECTRONICS CORPORATION
Input On Voltage - Collector Current
-0.1
-1
-10
-1 -10 -100
Collector Current Ｉ Ｃ （ ｍＡ ）
Input On Voltage ＶＩ（ＯＮ）
（Ｖ）
Collector Current - Input Off Voltage
-10
-100
-1000
-0 -0.4 -0.8 -1.2 -1.6 -2
Input Off Voltage Ｖ Ｉ （ Ｏ Ｆ Ｆ ） （ Ｖ ）
Collector Current ＩＣ（μＡ）
DC Forward Gain - Collector Current
1
10
100
1000
-1 -10 -100
Collector Current Ｉ Ｃ （ ｍＡ ）
DC Forward Gain ｈＦＥ
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunct
ion or
mishap.
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herein.
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Jan.2003
