AUIRF3805S-7P AUIRF3805L-7P AUTOMOTIVE GRADE Features Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS RDS(on) typ. max. Package Type AUIRF3805L-7P TO-263-7PIN AUIRF3805S-7P D2Pak-7PIN 2.0m 2.6m 240A ID Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications. Base Part Number 55V TO-263CA 7 Pin AUIRF3805L-7P D2Pak 7 Pin AUIRF3805S-7P G D S Gate Drain Source Standard Pack Form Quantity Tube 50 Tube 50 Tape and Reel Left 800 Complete Part Number AUIRF3805L-7P AUIRF3805S-7P AUIRF3805S-7TRL Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. ID @ TC = 25C Continuous Drain Current, VGS @ 10V 240 ID @ TC = 100C ID @ TC = 25C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) 170 160 IDM PD @TC = 25C Pulsed Drain Current Maximum Power Dissipation 1000 300 VGS EAS EAS (tested) IAR EAR dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Symbol RJC RCS RJA RJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB Mount, steady state) Units A W 2.0 20 440 680 See Fig.12a,12b,15,16 2.3 -55 to + 175 W/C V mJ A mJ V/ns C 300 Typ. Max. Units --- 0.50 --- --- 0.50 --- 62 40 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2017-10-09 AUIRF3805S/L-7P Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 --- --- V VGS = 0V, ID = 250A --- 0.05 --- V/C Reference to 25C, ID = 1.0mA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- 2.0 2.6 RDS(on) SMD Static Drain-to-Source On-Resistance m VGS = 10V, ID = 140A VGS(th) Gate Threshold Voltage 2.0 --- 4.0 V VDS = VGS, ID = 250A gfs Forward Transconductance 110 --- --- S VDS = 25V, ID = 140A --- --- 20 VDS = 55V, VGS = 0V Drain-to-Source Leakage Current A IDSS --- --- 250 VDS = 55V, VGS = 0V, TJ = 125C Gate-to-Source Forward Leakage --- --- 200 VGS = 20V nA IGSS Gate-to-Source Reverse Leakage --- --- -200 VGS = -20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge --- 130 200 ID = 140A Qgs Gate-to-Source Charge --- 53 --- nC VDS = 44V VGS = 10V Qgd Gate-to-Drain ("Miller") Charge --- 49 --- td(on) Turn-On Delay Time --- 23 --- VDD = 28V ID = 140A tr Rise Time --- 130 --- ns td(off) Turn-Off Delay Time --- 80 --- RG = 2.4 VGS = 10V Fall Time --- 52 --- tf Between lead, Internal Drain Inductance --- 4.5 --- LD 6mm (0.25in.) nH from package LS Internal Source Inductance --- 7.5 --- and center of die contact Ciss Input Capacitance --- 7820 --- VGS = 0V VDS = 25V Coss Output Capacitance --- 1260 --- Crss Reverse Transfer Capacitance --- 610 --- pF = 1.0 MHz, See Fig. 5 Coss Output Capacitance --- 4310 --- VGS = 0V, VDS = 1.0V, = 1.0MHz Coss Output Capacitance 980 VGS = 0V, VDS = 44V, = 1.0MHz Coss eff. Effective Output Capacitance --- 1540 --- VGS = 0V, VDS = 0V to 44V Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol IS --- --- 240 (Body Diode) showing the A integral reverse Pulsed Source Current ISM --- --- 1000 (Body Diode) p-n junction diode. VSD Diode Forward Voltage --- --- 1.3 V TJ = 25C, IS = 140A, VGS = 0V --- 45 68 trr Reverse Recovery Time ns TJ = 25C, IF = 140A, VDD = 28V --- 35 53 Qrr Reverse Recovery Charge nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ton Forward Turn-On Time Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). This value determined from sample failure population starting TJ = 25C, L=0.043mH, RG = 25, IAS = 140A,VGS =10V. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 2 This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ of approximately 90C. Solder mounted on IMS substrate. Limited by TJmax starting TJ = 25C, L=0.043mH, RG = 25, IAS = 140A,VGS =10V.Part not recommended for use above this value. 2017-10-09 AUIRF3805S/L-7P 10000 10000 1000 BOTTOM 100 10 1 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1000 BOTTOM 100 4.5V 10 60s PULSE WIDTH 60s PULSE WIDTH Tj = 175C Tj = 25C 0.1 0.1 1 10 1 100 1000 0.1 V DS, Drain-to-Source Voltage (V) 10 100 1000 Fig. 2 Typical Output Characteristics 250 Gfs, Forward Transconductance (S) 1000 ID, Drain-to-Source Current ) 1 V DS, Drain-to-Source Voltage (V) Fig. 1 Typical Output Characteristics T J = 175C 100 T J = 25C 10 VDS = 25V 60s PULSE WIDTH 2 4 6 8 VGS, Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics T J = 25C 200 150 T J = 175C 100 50 V DS = 10V 380s PULSE WIDTH 0 1.0 3 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 10 0 20 40 60 80 100 120 ID ,Drain-to-Source Current (A) Fig. 4 Typical Forward Transconductance vs. Drain Current 2017-10-09 AUIRF3805S/L-7P 12.0 100000 ID= 140A C, Capacitance(pF) C oss = Cds + Cgd 10000 C iss Coss C rss 1000 8.0 6.0 4.0 2.0 0.0 100 1 10 0 100 Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 10000 1000 T J = 175C 100 T J = 25C 1 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 150 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 10000 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100sec 1msec 100 10msec 10 DC 1 Tc = 25C Tj = 175C Single Pulse VGS = 0V 0.1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-to-Drain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 4 50 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 10 VDS = 64V VDS = 40V 10.0 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = Cgs + Cgd, C ds SHORTED C rss = Cgd 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 2017-10-09 AUIRF3805S/L-7P 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) 250 ID, Drain Current (A) 200 150 100 50 ID = 140A VGS = 10V 2.0 1.5 1.0 0.5 0 25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140160 180 175 T J , Junction Temperature (C) T C , Case Temperature (C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance vs. Temperature Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 J 0.02 0.01 0.01 R1 R1 J 1 R2 R2 R3 R3 C 1 2 3 2 3 Ci= iRi Ci= iRi SINGLE PULSE ( THERMAL RESPONSE ) C Ri (C/W) i (sec) 0.0794 0.000192 0.1474 0.000628 0.2737 0.014012 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2017-10-09 AUIRF3805S/L-7P 15V + V - DD IAS 20V tp A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS EAS , Single Pulse Avalanche Energy (mJ) D.U.T RG 2000 DRIVER L VDS ID 21A 37A BOTTOM 140A TOP 1500 1000 500 0 tp 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) Fig 12c. Maximum Avalanche Energy I AS Fig 12b. Unclamped Inductive Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 13a. Basic Gate Charge Waveform VGS(th) Gate threshold Voltage (V) 5.0 4.5 4.0 3.5 3.0 2.5 ID = 250A ID = 1.0mA ID = 1.0A 2.0 1.5 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( C ) Fig 14. Threshold Voltage vs. Temperature Fig 13b. Gate Charge Test Circuit 6 2017-10-09 AUIRF3805S/L-7P 1000 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse) 100 0.01 0.05 0.10 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs. Pulse width EAR , Avalanche Energy (mJ) 500 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 140A 400 300 200 100 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = T/ ZthJC Iav = 2T/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 16. Maximum Avalanche Energy vs. Temperature 7 2017-10-09 AUIRF3805S/L-7P Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms 8 2017-10-09 AUIRF3805S/L-7P D2Pak - 7 Pin Package Outline Dimensions are shown in millimeters (inches) D2Pak - 7 Pin Part Marking Information Part Number AUF3805S-7P YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code 9 2017-10-09 AUIRF3805S/L-7P TO-263CA - 7 Pin Long Leads Package Outline Dimensions are shown in millimeters (inches) TO-263CA - 7 Pin Part Marking Information Part Number AUF3805L-7P YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code 10 2017-10-09 AUIRF3805S/L-7P D2Pak - 7 Pin Tape and Reel 11 2017-10-09 AUIRF3805S/L-7P Qualification Information Qualification Level Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D2 PAK 7 Pin Machine Model Human Body Model ESD Charged Device Model RoHS Compliant MSL1, 260C Class M4(+/-425V) (Per AEC-Q101-002) Class H3A(+/-4000V) (per AEC-Q101-001) Class C5 (+/-1000V) (per AEC-Q101-005) Yes Highest passing voltage. Revision History Date 09/02/2015 09/30/2015 10/09/2017 Comments Updated data sheet with corporate template. Corrected ordering table on page1. Updated "Infineon" logo all pages. Updated disclaimer on last page Corrected typo error on part marking on page 9,10. Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's products and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer's technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies' products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 12 2017-10-09