FQI8N60C - Fairchild - Product.Network

FQB8N60C / FQI8N60C

600V N-Ch annel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction, electronic lamp ballasts

based on half bridge topology.

Features

• 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V

• Low gate charge ( typical 28 nC)

• Low Crss ( typical 12 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maxim um Ratings TC = 25°C unless otherwise noted

Thermal Char acteristics

* When mounted on the minimum pad size recommended (PCB Mount)

Symbol Parameter FQB8N60C / FQI8N60C Units

VDSS Drain-Source Voltage 600 V

IDDrain Current - Continuous (TC = 25°C) 7.5 A

- Continuous (TC = 100°C) 4.6 A

IDM Drain Current - Pulsed (Note 1) 30 A

VGSS Gate-Source Voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 230 mJ

IAR Avalanche Current (Note 1) 7.5 A

EAR Repetitive Avalanche Energy (Note 1) 14.7 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

Power Dissipation (TA = 25°C)* 3.13 W

Power Dissipation (TC = 25°C) 147 W

- Derate above 25°C 1.18 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 °C

Symbol Parameter Typ Max Units

RθJC Thermal Resistance, Junction-to-Case -- 0.85 °C/W

RθJA Thermal Resistance, Junction-to-Ambient* -- 40 °C/W

RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

D2-PAK

FQB Series

I2-PAK

FQI Series

GSD

October 2008

QFET

•RoHS Compliant

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FQB8N60C / FQI8N60C

Electrical Characteristics TC = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 7.3mH, IAS = 7.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 7.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Symbol Parame ter Test Condit ions Min Typ Max Units

Off Characteristics

BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = 250 µA600 -- -- V

∆BVDSS

/ ∆TJ

Breakdown Voltage Temperature

Coefficient ID = 250 µA, Referenced to 25°C -- 0.7 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 µA

VDS = 480 V, TC = 125°C -- -- 10 µA

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteri st ics

VGS(th) Gate Threshold Volt age VDS = VGS, ID = 250 µA2.0 -- 4.0 V

RDS(on) Static Drain-Source

On-Resistance VGS = 10 V, ID = 3.75 A -- 1.0 1.2 Ω

gFS Forward Transconductance VDS = 40 V, ID = 3.75 A (Note 4) -- 8.7 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 965 1255 pF

Coss Output Capacitance -- 105 135 pF

Crss Reverse Transfer Capacitance -- 12 16 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 300 V, ID = 7.5A,

RG = 25 Ω

(Note 4, 5)

-- 16.5 45 ns

trTurn-On Rise Time -- 60.5 130 ns

td(off) Turn-Off De l a y Time -- 81 170 ns

tfTurn -Off Fa ll Time -- 64.5 140 n s

QgTotal Gate Cha rge VDS = 480 V, ID = 7.5A,

VGS = 10 V

(Note 4, 5)

-- 28 36 nC

Qgs Gate-Source Charge -- 4.5 -- nC

Qgd Gate-Drain Charge -- 12 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- 7.5 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 30 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = 7.5 A -- -- 1.4 V

trr Reverse Recovery Time VGS = 0 V, I S = 7.5 A,

dIF / dt = 100 A/µs (Note 4)

-- 365 -- ns

Qrr Reverse Recovery Charge -- 3.4 -- µC

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FQB8N60C / FQI8N60C

0 5 10 15 20 25 30

VDS = 300V

VDS = 120V

VDS = 48 0V

$ No t e : I D = 8A

VGS, G a te -S o u r ce Voltag e [V ]

QG, To ta l Ga te Cha rg e [n C ]

0.2 0.4 0.6 0.8 1.0 1.2 1.4

10-1

100

101

150%

$ No te s :

1. V GS = 0V

2. 250&s Pu lse T e st

25%

IDR, Reverse Drain Current [A]

VSD, Source-Drain voltage [V]

0 5 10 15 20

0.5

1.0

1.5

2.0

2.5

3.0

3.5

VGS = 20V

VGS = 10V

$ Note : TJ = 25%

RDS(ON) ['],

Drain-Source On-Resistance

ID, Drain Current [A]

Typical Characteristics

Figure 5. Capacitanc e C haracterist i cs Figure 6. Gate Charge C haracter istics

Figure 3. On-Resistanc e Variation vs

Drain Current and Gate Voltage Figure 4 . Bod y Diode Fo rwa rd Voltage

Variation with Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Charact er i stic s

10-1 100101

10-1

100

101

VGS

Top : 1 5 . 0 V

1 0.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

Botto m : 5.0 V

$ Note s :

1. 250&s Pulse Test

2. T C = 2 5%

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

246810

10-1

100

101

150oC

25oC-55oC

$ Notes :

1 . V DS = 40V

2 . 2 50 &s Pulse Test

ID, Drain Current [A]

VGS, Gate-Source Voltage [V]

10-1 100101

200

400

600

800

1000

1200

1400

1600

1800

2000 Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

N o te s ;

1 . V GS = 0 V

2. f = 1 M Hz

Crss

Coss

Ciss

C apacitanc e [pF]

VDS, Drain-Source Voltage [V]

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FQB8N60C / FQI8N60C

100101102103

10-2

10-1

100

101

102

100 m s

1 m s

10 µs

10 m s

100 µs

Operation in This Area

is Limited by R DS(on)

$ Note s :

1. T C = 25 oC

2. T J = 150 oC

3. Sin g le P u ls e

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs Case Temperat ure

Figu re 7. Br ea kdown Voltage Variati on

vs Temperature

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

N o te s :

1 . V GS = 0 V

2 . ID = 250 &A

BV DSS , (Norm alized)

D rain-S ource Breakdow n V oltage

TJ, Junction T em perature [oC]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

$ N o te s :

1 . V GS = 10 V

2 . ID = 4 A

RDS(ON) , ( Nor ma liz e d)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

25 50 75 100 125 150

ID, Drain C u rre n t [A ]

TC, Case Temperature [%

]

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

$ Notes :

1 . Z(JC(t) = 0 .85 %/W Ma x .

2 . Duty F a c tor, D = t1/t2

3 . TJM - T C = PDM * Z (JC(t)

s in gle p uls e

D=0.5

0.02

0.2

0.05

0.1

0.01

Z(JC

(t), T he rma l Re s po n s e

t1, S quare W ave Pulse Duration [sec]

Figure 11. Transient The rm al Response Cur ve

PDM

Figure 8. On-Resistance Variation

vs Temperature

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FQB8N60C / FQI8N60C

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

Charge

VGS

10V Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K)

200nF

12V

Same Type

as DUT

Charge

VGS

10V Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K)

200nF

12V

Same Type

as DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS RL

DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS RL

DUT

VGS

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

t p

EAS =LI

AS2

----

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

t p

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FQB8N60C / FQI8N60C

Peak Diode Recover y dv/dt Test Circuit & Waveforms

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD con troll ed by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD con troll ed by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

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FQB8N60C / FQI8N60C

Dimensions in Millimeters

Mechanical Dimensions

D2 - PAK

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FQB8N60C / FQI8N60C

Mechanical Dimensions

Dimensions in Millimeters

I2 - PAK

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FQB8N60C / FQI8N60C

FQB8N60C / FQI8N60C Rev. A1www.fairchildsemi.com

Rev. I37

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CorePLUS™

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