DMP2035UFCL 20V P-CHANNEL ENHANCEMENT MODE MOSFET Summary Features and Benefits VDSS ADVANCE INFORMATION -20V Typical Off Board Profile of 0.575mm - Ideally Suited for Thin Applications -6.6 A Low RDS(ON) - Minimizes Conduction Losses -5.8 A PCB Footprint of 2.56mm2 ESD Protected Gate 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 standards for High Reliability RDS(ON) max ID max TA = +25C 24m @VGS = -4.5V 31m @VGS = -2.5V Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, Case: U-DFN1616-6 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 making it ideal for high-efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Lead Free Plating (NiPdAu Finish over Copper Leadframe). Analog Switches Terminals: Solderable per MIL-STD-202, Method 208 e4 Weight: 0.04 grams (Approximate) U-DFN1616-6 Pin 1 ESD PROTECTED Top View Bottom View Device Symbol Top View Pin-Out Ordering Information (Note 4) Notes: Product Case Packaging DMP2035UFCL-7 U-DFN1616-6 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information 25P = Product Type Marking Code YM = Date Code Marking Y = Year (ex: C = 2015) M = Month (ex: 9 = September) 25P YM Date Code Key Year Code Month Code 2015 C Jan 1 2016 D Feb 2 DMP2035UFCL Document number: DS37917 Rev. 1 - 2 Mar 3 2017 E Apr 4 May 5 2018 F Jun 6 1 of 7 www.diodes.com 2019 G Jul 7 Aug 8 2020 H Sep 9 Oct O 2021 I Nov N Dec D September 2015 (c) Diodes Incorporated DMP2035UFCL Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) Symbol VDSS VGSS Value -20 8 -6.6 -5.3 -40 Units V V -1.7 A Symbol Value Unit ADVANCE INFORMATION TA = +25C Steady State TA = +70C Pulsed Drain Current (380s Pulse, 1% Duty Cycle)(Note 7) ID IDM IS Maximum Continuous Body Diode Forward Current (Note 6) Thermal Characteristics A (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation (Note 5) PD 0.74 W RJA 169 C/W PD 1.6 W RJA 79 C/W TJ, TSTG -55 to +150 C Thermal Resistance, Junction to Ambient @TA = +25C (Note 5) Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient @TA = +25C (Note 6) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25C Zero Gate Voltage Drain Current TJ = +150C (Note 8) Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -8V) Total Gate Charge (VGS = -4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: A Symbol Min Typ Max Unit Test Condition BVDSS IDSS -20 - - -1.0 V A VGS = 0V, ID = -250A VDS = -16V, VGS = 0V IDSS - - - - -100 10 A A VDS = -16V, VGS = 0V IGSS VGS(TH) -0.4 - -1.0 V RDS(ON) - 19 24 31 24 31 45 m VSD -0.5 -0.7 -1.2 V VDS = VGS, ID = -250A VGS = -4.5V, ID = -8.0A VGS = -2.5V, ID = -7.0A VGS = -1.8V, ID = -6.0A VGS = 0V, IS = -1A Ciss Coss Crss Rg Qg Qg Qgs Qgd - 1,610 157 145 9.45 29 15.4 2.5 3.3 16.8 12.4 94.1 42.4 2,200 240 220 14.5 44 21 3.8 5 34 25 188 85 pF pF pF nC nC nC nC ns ns ns ns tD(ON) tR tD(OFF) tF VGS = 8V, VDS = 0V VDS = -10V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -10V, ID = -4A VDS = -20V, VGS = -10V, RG = 6.0, ID = -6A 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Repetitive rating, pulse width limited by junction temperature. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMP2035UFCL Document number: DS37917 Rev. 1 - 2 2 of 7 www.diodes.com September 2015 (c) Diodes Incorporated DMP2035UFCL 30.0 30 VGS = -8.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 VGS = -4.5V 20.0 VGS = -1.8V 15.0 VGS= -2.5V 10.0 VGS = -1.5V 5.0 20 15 10 125 150 85 5 VGS = -1.2V 0.0 25 -55 0 0 0.5 1 1.5 2 2.5 3 0.4 0.6 VDS, DRAIN-SOURCE VOLTAGE (V) 0.026 VGS = -2.5V 0.022 0.02 VGS = -4.5V 0.016 1 3 5 7 9 11 13 15 17 19 21 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.028 0.018 1.2 1.4 1.6 1.8 2 2.2 0.1 0.08 ID = -8.0A 0.06 ID = -6.0A 0.04 0.02 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.026 150 0.022 125 85 0.018 25 0.014 -55 2 4 6 8 10 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage VGS = -10V 1 Figure 2. Typical Transfer Characteristic 0.03 0.024 0.8 VGS, GATE-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCE INFORMATION VDS = -5V VGS = -2.0V 25.0 0.01 1.5 VGS = -2.5V, ID = 7.0A 1.3 1.1 VGS = -4.5V, ID = 8.0A 0.9 0.7 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature DMP2035UFCL Document number: DS37917 Rev. 1 - 2 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 6. On-Resistance Variation with Junction Temperature September 2015 (c) Diodes Incorporated 0.035 VGS = -2.5V, ID = 7.0A 0.03 1 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.04 0.025 0.02 VGS = -4.5V, ID = 8.0A 0.015 0.9 0.8 -50 -25 0 25 50 75 100 125 ID = -1mA 0.7 0.6 0.5 ID = -250A 0.4 0.3 0.2 0.1 0.01 -50 150 TJ, JUNCTION TEMPERATURE () Figure 7. On-Resistance Variation with Junction Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 8. Gate Threshold Variation vs. Junction Temperature 30 100000 25 10000 IDSS, LEAKAGE CURRENT (nA) IS, SOURCE CURRENT (A) VGS = 0V 20 15 TJ = 125oC 10 5 TJ = 85oC TJ = 25oC TJ = 150oC 150 125 1000 100 85 10 1 TJ = -55oC 25 0.1 0 0 0.3 0.6 0.9 1.2 0 1.5 5 10 15 20 VDS, Drain-SOURCE VOLTAGE (V) Figure 10. Typical Drain-Source Leakage Current vs. Voltage VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 8 10000 f=1MHz 6 Ciss 1000 VGS (V) CT, JUNCTION CAPACITANCE (pF) ADVANCE INFORMATION DMP2035UFCL Coss 4 Crss 100 VDS = -10V, ID = -4A 2 0 10 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. Typical Junction Capacitance DMP2035UFCL Document number: DS37917 Rev. 1 - 2 4 of 7 www.diodes.com 0 5 10 15 20 25 30 Qg (nC) Figure 12. Gate Charge September 2015 (c) Diodes Incorporated DMP2035UFCL 100 PW =100s ID, DRAIN CURRENT (A) 10 PW =1ms 1 0.1 PW =10ms PW =100ms PW =1s TJ(Max) = 150 TC = 25 Single Pulse DUT on 1*MRP Board VGS= 4.5V 0.01 0.01 0.1 PW =10s DC 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 13. SOA, Safe Operation Area 1 D=0.7 D=0.5 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION RDS(ON) Limited D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RJA(t) = r(t) * RJA RJA = 169/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 14. Transient Thermal Resistance DMP2035UFCL Document number: DS37917 Rev. 1 - 2 5 of 7 www.diodes.com September 2015 (c) Diodes Incorporated DMP2035UFCL Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A3 A1 A U-DFN1616-6 (Type K) Dim Min Max Typ A 0.55 0.60 0.575 A1 0.00 0.05 0.02 A3 --0.13 b 0.20 0.30 0.25 D 1.55 1.65 1.60 D2 0.57 0.77 0.67 D2a 0.10 0.30 0.20 e --0.50 E 1.55 1.65 1.60 E2 1.30 1.50 1.40 E2a 0.52 0.72 0.62 L 0.25 0.35 0.30 z --0.175 All Dimensions in mm ADVANCE INFORMATION Seating Plane D D2a D2 E E2 E2a L(2x) z(4x) b e Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X3 Y Dimensions Y C X X1 X2 X3 Y Y1 Y2 X2 Y1 Y2 X1 X(6x) DMP2035UFCL Document number: DS37917 Rev. 1 - 2 Value (in mm) 0.500 0.300 0.200 0.720 0.400 0.475 0.620 1.900 C 6 of 7 www.diodes.com September 2015 (c) Diodes Incorporated DMP2035UFCL IMPORTANT NOTICE ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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