2009-11-25
Rev. 1.5 Page 1
SDP20S30
thinQ!¥ SiC Schottky Diode
Silicon Carbide Schottky Diode
• Revolutionary semiconductor
material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
the switching behavior
• No forward recovery
1 2 3
Product Summary
VRRM 300 V
Qc23 nC
IF2x10 A
P-TO220
Type Package Ordering Code
SDP20S30 P-TO220-3 Q67040-S4419
Marking
D20S30
Maximum Ratings, at Tj = 25 °C, unless otherwise specified (per leg)
Parameter Symbol Value Unit
Continuous forward current, TC=100°C IF10 A
RMS forward current,f=50Hz IFRMS 14
Surge non repetitive forward current, sine halfwave
TC=25°C, tp=10ms
IFSM 36
Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
IFRM 45
Non repetitive peak forward current
tp=10µs, TC=25°C
IFMAX 100
i 2t value,TC=25°C, tp=10ms ³i2dt6.5 A²s
Repetitive peak reverse voltage VRRM 300 V
Surge peak reverse voltage VRSM 300
Power dissipation, single diode mode,TC=25°C Ptot 65 W
Operating and storage temperature Tj,Tstg -55... +175 °C
2009-11-25
Rev. 1.5 Page 2
SDP20S30
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case (per leg) RthJC - - 2.3 K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified (per leg)
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Diode forward voltage
IF=10A, Tj=25°C
IF=10A, Tj=150°C
VF
-
-
1.5
1.5
1.7
1.9
V
Reverse current
VR=300V, Tj=25°C
VR=300V, Tj=150°C
IR
-
-
15
20
200
1000
µA
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2009-11-25
Rev. 1.5 Page 3
SDP20S30
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified (per leg)
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Total capacitive charge1)
VR=200V, IF=10A, diF/dt=-200A/µs, Tj=150°C
Qc- 23 - nC
Switching time2)
VR=200V, IF=10A, diF/dt=-200A/µs, Tj=150°C
trr - n.a. - ns
Total capacitance
VR=0V, TC=25°C, f=1MHz
VR=150V, TC=25°C, f=1MHz
VR=300V, TC=25°C, f=1MHz
C
-
-
-
600
55
40
-
-
-
pF
2009-11-25
Rev. 1.5 Page 4
SDP20S30
1 Power dissipation (per leg)
Ptot = f(TC)
0 20 40 60 80 100 120 140 °C 180
TC
0
5
10
15
20
25
30
35
40
45
50
55
60
W
70
Ptot
2 Diode forward current (per leg)
IF=f(TC)
parameter: Tj≤175 °C
0 20 40 60 80 100 120 140 °C 180
TC
0
1
2
3
4
5
6
7
8
9
A
11
IF
4 Typ. forward power dissipation vs.
average forward current (per leg)
PF(AV)=f(IF)TC=100°C, d= tp/T
0 2 4 6 8 10 12 14 A18
IF(AV)
0
4
8
12
16
20
24
W
32
PF(AV)
d=1
d=0.5
d=0.2
d=0.1
3 Typ. forward characteristic (per leg)
IF = f (VF)
parameter: Tj , tp= 350 µs
0.6 0.8 1 1.2 1.4 1.6 1.8 V2.2
VF
0
2
4
6
8
10
12
14
16
A
20
IF
-40°C
25°C
100°C
125°C
150°C
2009-11-25
Rev. 1.5 Page 5
SDP20S30
5 Typ. reverse current vs. reverse voltage
(per leg)IR=f(VR)
50 100 150 200 V300
VR
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
µA
IR
150°C
125°C
100°C
25°C
6 Transient thermal impedance (per leg)
ZthJC = f(tp)
parameter : D=tp/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
SDP20S30
ZthJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
7 Typ. capacitance vs. reverse voltage
(per leg)C=f(VR)
parameter: TC = 25 °C, f = 1 MHz
10 010 110 210 3
V
VR
0
50
100
150
200
250
300
350
pF
450
C
8 Typ. C stored energy (per leg)
EC=f(VR)
0 50 100 150 200 V300
VR
0
0.5
1
1.5
µJ
2.5
EC
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Rev. 1.5 Page 6
SDP20S30
9 Typ. capacitive charge vs. current slope
(per leg)Qc=f(diF/dt)
parameter: Tj = 150 °C
100 200 300 400 500 600 700 800 A/µs 1000
diF/dt
0
2
4
6
8
10
12
14
16
18
nC
22
Qc
IF*0.5
IF
IF*2
2009-11-25
Rev. 1.5 Page 7
SDP20S30
P-TO220-3-1, P-TO220-3-21
2009-11-25
Rev. 1.5 Page 8
SDP20S30
