MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM150RSE060 PM150RSE060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM150RSE060 FEATURE a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process. For example, typical VCE(sat)=1.7V b) Using new Diode which is designed to get soft reverse recovery characteristics. * 3 150A, 600V Current-sense IGBT for 15kHz switching * 50A, 600V Current-sense regenerative brake IGBT * Monolithic gate drive & protection logic * Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage * Acoustic noise-less 15/18.5kW class inverter application * UL Recognized Yellow Card No.E80276(N) File No.E80271 APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm 1101 950.5 2-2.54 2-2.54 2-2.54 6-2.54 17.02 10.16 10.16 10.16 Screwing depth Min9.0 4-5.5 MOUNTING HOLES 3.22 Terminal code PBT 78 9 N 2.54 10 V 0.50.3 24.5 4-R6 26 26 21.2 +1.0 6-M5NUTS 0.64 2-2.54 0.64 2-2.54 4 LABEL 22 19.4 A : DETAIL 31.6 32.6 1.6 16- 3.22 22 -0.5 67.4 A VN1 Br UN VN WN FO U 11.6 W 11. 12. 13. 14. 15. 16. 4.5 17.5 12 VUPC UP VUP1 VVPC VP VVP1 VWPC WP VWP1 VNC 10.6 P 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 10 12 14 16 11 13 15 740.5 4 56 891 17 20 B 20 20.5 123 Jul. 2005 http://store.iiic.cc/ MITSUBISHI <INTELLIGENT POWER MODULES> PM150RSE060 FLAT-BASE TYPE INSULATED PACKAGE INTERNAL FUNCTIONS BLOCK DIAGRAM Rfo=1.5k WP Br Fo VNC W N VN1 VN UN VWP1 VWPC VP VVP1 VVPC UP VUP1 VUPC Rfo Gnd In Gnd Fo Vcc Gnd In Gnd Si Out Fo Vcc Gnd In Si Out Gnd Fo Vcc Si Out Gnd In Gnd Fo Vcc Si Out Gnd In Gnd Vcc Si Out Gnd In Gnd Vcc Gnd In Si Out Gnd Vcc Si Out Th B N W V U P MAXIMUM RATINGS (Tj = 25C, unless otherwise noted) INVERTER PART Symbol VCES IC ICP PC Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature Condition Ratings 600 150 300 416 -20 ~ +150 Unit V A A W C Condition Ratings 600 50 100 245 600 50 -20 ~ +150 Unit V A A W V A C Ratings Unit 20 V 20 V 20 20 V mA VD = 15V, VCIN = 15V TC = 25C TC = 25C TC = 25C BRAKE PART Symbol VCES IC ICP PC VR(DC) IF Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation FWDi Rated DC Reverse Voltage FWDi Forward Current Junction Temperature VD = 15V, VCIN = 15V TC = 25C TC = 25C TC = 25C TC = 25C TC = 25C CONTROL PART Symbol Parameter VD Supply Voltage VCIN Input Voltage VFO IFO Fault Output Supply Voltage Fault Output Current Condition Applied between : VUP1-VUPC VVP1-VVPC, VWP1-VWPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC WP-VWPC, UN * VN * WN * Br-VNC Applied between : FO-VNC Sink current at FO terminal Jul. 2005 http://store.iiic.cc/ MITSUBISHI <INTELLIGENT POWER MODULES> PM150RSE060 FLAT-BASE TYPE INSULATED PACKAGE TOTAL SYSTEM Parameter Supply Voltage Protected by VCC(PROT) OC & SC VCC(surge) Supply Voltage (Surge) Module Case Operating TC Temperature Storage Temperature Tstg Isolation Voltage Viso Symbol Ratings Condition VD = 13.5 ~ 16.5V, Inverter Part, Tj = 125C Start Unit 400 V 500 V (Note-1) -20 ~ +100 C 60Hz, Sinusoidal, Charged part to Base, AC 1 min. -40 ~ +125 2500 C Vrms Applied between : P-N, Surge value or without switching PBT (Note-1) Tc measurement point is as shown below. (Base plate depth 3mm) B P N W V 67mm U Tc THERMAL RESISTANCES Symbol Rth(j-c)Q Rth(j-c)F Rth(j-c)Q Rth(j-c)F Rth(j-c')Q Rth(j-c')F Rth(j-c')Q Rth(j-c')F Rth(c-f) Parameter Junction to case Thermal Resistances Contact Thermal Resistance Test Condition Inverter IGBT part (per 1 element), (Note-1) Inverter FWDi part (per 1 element), (Note-1) Brake IGBT part, (Note-1) Brake FWDi part, (Note-1) Inverter IGBT part (per 1 element), (Note-2) Inverter FWDi part (per 1 element), (Note-2) Brake IGBT part, (Note-2) Brake FWDi part, (Note-2) Case to fin, Thermal grease applied (per 1 module) Min. -- -- -- -- -- -- -- -- -- Limits Typ. -- -- -- -- -- -- -- -- -- Max. 0.30 0.47 0.51 1.00 0.17 0.27 0.35 0.64 0.027 Min. -- -- -- 0.8 -- -- -- -- -- -- Limits Typ. 1.7 1.7 2.2 1.2 0.15 0.4 2.4 0.6 -- -- Max. 2.3 2.3 3.3 2.4 0.3 1.0 3.3 1.2 1 10 Unit C/W (Note-2) TC measurement point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise noted) INVERTER PART Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Parameter Test Condition Collector-Emitter Saturation Voltage FWDi Forward Voltage VD = 15V, IC = 150A VCIN = 0V, Pulsed (Fig. 1) -IC = 150A, VD = 15V, VCIN = 15V Switching Time VD = 15V, VCIN = 15V0V VCC = 300V, IC = 150A Tj = 125C Inductive Load (upper and lower arm) Collector-Emitter Cutoff Current VCE = VCES, VCIN = 15V (Fig. 4) Tj = 25C Tj = 125C (Fig. 2) (Fig. 3) Tj = 25C Tj = 125C Unit V V s mA Jul. 2005 http://store.iiic.cc/ MITSUBISHI <INTELLIGENT POWER MODULES> PM150RSE060 FLAT-BASE TYPE INSULATED PACKAGE BRAKE PART Symbol VCE(sat) VFM ICES Test Condition Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage Collector-Emitter Cutoff Current VD = 15V, IC = 50A VCIN = 0V, Pulsed IF = 50A (Fig. 1) VCE = VCES, VCIN = 15V (Fig. 4) Tj = 25C Tj = 125C (Fig. 2) Tj = 25C Tj = 125C Min. -- -- -- -- -- Limits Typ. 2.35 2.55 2.2 -- -- Max. 2.80 3.05 3.3 1 10 Min. -- -- 1.2 1.7 -- 351 210 Limits Typ. 52 13 1.5 2.0 -- 413 -- Max. 72 18 1.8 2.3 690 570 -- 88 -- -- -- -- 111 -- 11.5 -- -- -- 420 132 10 118 100 12.0 12.5 -- 10 -- -- -- 125 -- 12.5 -- 0.01 15 1.0 1.8 -- Min. 2.5 2.5 -- Limits Typ. 3.0 3.0 560 Unit V V mA CONTROL PART Symbol Parameter Test Condition VN1-VNC VXP1-VXPC ID Circuit Current VD = 15V, VCIN = 15V Vth(ON) Vth(OFF) Input ON Threshold Voltage Input OFF Threshold Voltage Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN * VN * WN * Br-VNC OC Over Current Trip Level Inverter part VD = 15V (Fig. 5,6) Break part -20 Tj 125C, VD = 15V SC Short Circuit Trip Level -20 Tj 125C, VD = 15V toff(OC) OT OTr UV UVr IFO(H) IFO(L) Over Current Delay Time VD = 15V Base-plate Temperature detection, VD = 15V tFO Over Temperature Protection (Fig. 5,6) Tj = -20C Tj = 25C Tj = 125C (Fig. 5,6) Inverter part Brake part (Fig. 5,6) Trip level Reset level Trip level Reset level Supply Circuit Under-Voltage Protection -20 Tj 125C Fault Output Current VD = 15V, VFO = 15V (Note-3) Minimum Fault Output Pulse Width VD = 15V (Note-3) (Note-3) Fault Fault Fault Fault output output output output 65 Unit mA V A A s C V mA ms is given only when the internal OC, SC, OT & UV protection. of OT protection operate by lower arm. of OC, SC protection given pulse. of OT, UV protection given pulse while over level. MECHANICAL RATINGS AND CHARACTERISTICS Symbol -- -- -- Test Condition Parameter Mounting torque Mounting torque Weight Main terminal Mounting part screw : M5 screw : M5 -- Max. 3.5 3.5 -- Unit N*m N*m g RECOMMENDED CONDITIONS FOR USE Symbol VCC Parameter Supply Voltage VD Control Supply Voltage VCIN(ON) VCIN(OFF) Input ON Voltage Input OFF Voltage fPWM PWM Input Frequency tdead Arm Shoot-through Blocking Time Test Condition Applied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC (Note-4) Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN * VN * WN * Br-VNC Using Application Circuit input signal of IPM, 3 sinusoidal PWM VVVF inverter (Fig. 8) For IPM's each input signals (Fig. 7) Recommended value 400 Unit V 15 1.5 V 0.8 4.0 V 20 kHz 2.5 s (Note-4) Allowable Ripple rating of Control Voltage : dv/dt 5V/s, 2Vp-p Jul. 2005 http://store.iiic.cc/ MITSUBISHI <INTELLIGENT POWER MODULES> PM150RSE060 FLAT-BASE TYPE INSULATED PACKAGE PRECAUTIONS FOR TESTING 1. Before appling any control supply voltage (VD), the input terminals should be pulled up by resistores, etc. to their corresponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing "OC" and "SC" tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device. (These test should not be done by using a curve tracer or its equivalent.) P, (U,V,W,B) IN (Fo) VCIN P, (U,V,W) Ic V IN (Fo) VCIN -Ic V (15V) (0V) VD (all) U,V,W, (N) VD (all) Fig. 1 VCE(sat) Test U,V,W,B, (N) Fig. 2 VEC, (VFM) Test a) Lower Arm Switching P VCIN (15V) trr Signal input (Upper Arm) CS VCIN Signal input (Lower Arm) VCE Irr U,V,W Ic Vcc Fo 90% 90% N VD (all) b) Upper Arm Switching Ic 10% 10% 10% 10% P tc (on) VCIN Signal input (Upper Arm) CS VCIN (15V) Signal input (Lower Arm) tc (off) VCIN U,V,W Vcc td (on) tr td (off) tf Fo (ton= td (on) + tr) (toff= td (off) + tf) N Ic VD (all) Fig. 3 Switching time Test circuit and waveform P, (U,V,W,B) A VCIN (15V) VCIN IN (Fo) Pulse VCE VD (all) Over Current U,V,W, (N) OC IC toff (OC) Fig. 4 ICES Test P, (U,V,W,B) Constant Current Short Circuit Current IN (Fo) Constant Current VCC SC VCIN IC VD (all) U,V,W, (N) IC Fig. 5 OC and SC Test Fig. 6 OC and SC Test waveform P VD VCINP U,V,W Vcc VD VCINN N Ic VCINP 0V t VCINN 0V t tdead tdead tdead Fig. 7 Dead time measurement point example Jul. 2005 http://store.iiic.cc/ MITSUBISHI <INTELLIGENT POWER MODULES> PM150RSE060 FLAT-BASE TYPE INSULATED PACKAGE P 10 20k VUP1 Vcc VD IF OUT + - Si UP In VUPC U GND GND 0.1 VVP1 VD Vcc Si VP In VVPC V GND GND VWP1 VD OUT Vcc M OUT Si WP In VWPC W GND GND 20k Vcc 10 IF Fo UN OUT Si In GND GND 0.1 N TEMP 20k Vcc 10 IF Fo VN Th OUT Si In GND GND 0.1 20k VD VN1 Vcc 10 IF Fo WN 0.1 In GND GND VNC 4.7k 1k B Vcc Fo Br 5V OUT Si Fo In Rfo OUT Si GND GND : Interface which is the same as the U-phase Fig. 8 Application Example Circuit NOTES FOR STABLE AND SAFE OPERATION ; Design the PCB pattern to minimize wiring length between opto-coupler and IPM's input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. Quick opto-couplers: TPLH, TPLH 0.8s. Use High CMR type. The line between opto-coupler and intelligent module should be shortened as much as possible to minimize the floating capacitance. Slow switching opto-coupler: recommend to use at CTR = 100 ~ 200%, Input current = 8 ~ 10mA, to work in active. Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply. Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal. Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line and improve noise immunity of the system. * * * * * * Jul. 2005 http://store.iiic.cc/ MITSUBISHI <INTELLIGENT POWER MODULES> PM150RSE060 FLAT-BASE TYPE INSULATED PACKAGE PERFORMANCE CURVES (Inverter Part) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 200 160 15V 120 13V 80 40 0 0 0.5 1 1.5 2 VD = 15V 1.5 1 0.5 Tj = 25C Tj = 125C 0 40 0 80 120 160 200 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL) 2 SWITCHING TIME CHARACTERISTICS (TYPICAL) 1.5 1 0.5 IC = 150A Tj = 25C Tj = 125C 0 12 13 14 15 16 17 101 7 VCC = 300V 5 VD = 15V Tj = 25C 4 Tj = 125C 3 2 Inductive load 100 7 5 4 3 tc(off) tc(on) 2 10-1 1 10 18 2 3 4 5 7 102 2 3 4 5 7 103 CONTROL SUPPLY VOLTAGE VD (V) COLLECTOR CURRENT IC (A) SWITCHING TIME CHARACTERISTICS (TYPICAL) SWITCHING LOSS CHARACTERISTICS (TYPICAL) 101 SWITCHING TIME ton, toff (s) 2 COLLECTOR-EMITTER VOLTAGE VCE (V) SWITCHING TIME tc(on), tc(off) (s) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) VD = 17V 7 5 4 3 2 toff ton 100 7 5 4 3 VCC = 300V VD = 15V Tj = 25C Tj = 125C Inductive load 2 10-1 1 10 2 3 4 5 7 102 2 3 4 5 7 103 SWITCHING LOSS ESW(on), ESW(off) (mJ/pulse) COLLECTOR CURRENT IC (A) Tj = 25C COLLECTOR CURRENT IC (A) 2 101 ESW(off) 7 5 4 3 2 100 ESW(on) VCC = 300V VD = 15V Tj = 25C Tj = 125C Inductive load 7 5 4 3 2 10-1 1 10 2 3 4 5 7 102 2 3 4 5 7 103 COLLECTOR CURRENT IC (A) Jul. 2005 http://store.iiic.cc/ MITSUBISHI <INTELLIGENT POWER MODULES> PM150RSE060 VD = 15V 7 5 4 3 2 102 7 5 4 3 2 101 7 5 4 3 2 100 Tj = 25C Tj = 125C 0 1 1.5 2 10-1 7 5 4 3 Irr 2 10-2 1 10 2.5 102 trr 7 5 4 3 2 2 3 4 5 7 102 2 101 3 4 5 7 103 EMITTER-COLLECTOR VOLTAGE VEC (V) COLLECTOR RECOVERY CURRENT -IC (A) ID VS. fc CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT PART) 100 CIRCUIT CURRENT ID (mA) 0.5 DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 100 103 7 VCC = 300V 7 5 VD = 15V 5 Tj = 25C 4 4 Tj = 125C 3 3 2 Inductive load 2 101 VD = 15V Tj = 25C N-side 80 60 40 P-side 20 0 0 5 REVERSE RECOVERY CURRENT lrr (A) 103 REVERSE RECOVERY TIME trr (s) DIODE FORWARD CHARACTERISTICS (TYPICAL) 10 15 20 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - c) COLLECTOR RECOVERY CURRENT -IC (A) FLAT-BASE TYPE INSULATED PACKAGE 25 CARRIER FREQUENCY fc (kHz) 7 5 3 2 100 7 5 3 2 10-1 7 5 3 2 10-2 7 5 3 Single Pulse 2 Per unit base = Rth(j - c)Q = 0.30C/W 10-3 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101 TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi PART) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - c) 101 7 5 3 2 100 7 5 3 2 10-1 7 5 3 2 10-2 7 5 3 Single Pulse 2 Per unit base = Rth(j - c)F = 0.47C/W 10-3 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101 TIME (s) Jul. 2005 http://store.iiic.cc/ MITSUBISHI <INTELLIGENT POWER MODULES> PM150RSE060 FLAT-BASE TYPE INSULATED PACKAGE PERFORMANCE CURVES (Brake Part) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 60 COLLECTOR CURRENT IC (A) Tj = 25C 50 VD = 17V 15V 40 13V 30 20 10 0 0 0.5 1 1.5 2 2.5 2.5 2 1.5 1 0.5 0 VD = 15V Tj = 25C Tj = 125C 0 COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL) 2.5 2 1.5 1 0.5 IC = 50A Tj = 25C Tj = 125C 0 12 13 14 15 16 17 18 30 40 50 60 DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 VD = 15V 7 5 4 3 2 101 7 5 4 3 2 100 Tj = 25C Tj = 125C 0 0.5 1 1.5 2 2.5 CONTROL SUPPLY VOLTAGE VD (V) EMITTER-COLLECTOR VOLTAGE VEC (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT PART) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi PART) 101 7 5 3 2 100 7 5 3 2 10-1 7 5 3 2 10-2 7 5 3 Single Pulse 2 Per unit base = Rth(j - c)Q = 0.51C/W NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - c) 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - c) 20 COLLECTOR CURRENT IC (A) COLLECTOR RECOVERY CURRENT -IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER VOLTAGE VCE (V) 10 10-3 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101 TIME (s) 7 5 3 2 100 7 5 3 2 10-1 7 5 3 2 10-2 7 5 3 Single Pulse 2 Per unit base = Rth(j - c)F = 1.00C/W 10-3 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101 TIME (s) Jul. 2005 http://store.iiic.cc/