DATA SH EET
Preliminary specification
Supersedes data of 1999 Nov 22
File under Integrated Circuits, IC01
2000 Feb 01
INTEGRATED CIRCUITS
TDA3676
Low dropout voltage/quiescent
current 10 V voltage regulator with
enable
2000 Feb 01 2
Philips Semiconductors Preliminary specification
Low dropout voltage/quiescent current
10 V voltage regulator with enable TDA3676
FEATURES
Fixed 10 V, 100 mA regulator with enable function
Supply voltage range up to 33 V (45 V)
Very low quiescent current of 15 µA (typical value)
Very low dropout voltage
High ripple rejection
Very high stability:
Electrolytic capacitors: Equivalent Series Resistance
(ESR) < 38 at IREG 25 mA
Other capacitors: 100 nF at 200 µAIREG 100 mA.
Pin compatible family TDA3672 to TDA3676
Protections:
Reverse polarity safe (down to 25 V without high
reverse current)
Negative transient of 50 V (RS=10, t < 100 ms)
Able to withstand voltages up to 18 V at the output
(supply line may be short-circuited)
ESD protected for all pins
DC short-circuit safe to ground and VP of the
regulator output
Temperature protection at Tj> 150 °C.
GENERAL DESCRIPTION
The TDA3676 is a fixed 10 V voltage regulator with very
lowdropoutvoltageandquiescentcurrent,whichoperates
over a wide supply voltage range.
The IC is available as:
TDA3676T: VP33 V, 40 °CTamb +85 °C and
SO8 package (non-automotive)
TDA3676AT: VP45 V, 40 °CTamb +125 °C and
SO8 package (automotive).
QUICK REFERENCE DATA
ORDERING INFORMATION
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply
VPsupply voltage regulator on
TDA3676T 3 14.4 33 V
TDA3676AT 3 14.4 45 V
Iqquiescent supply current VP= 14.4 V; IREG = 0 mA;
VI(EN) =5V 15 30 µA
Regulator output
VREG regulator output voltage VI(EN) =5V
13VVP22 V; IREG = 0.5 mA 9.6 10 10.4 V
13VVP45 V; IREG = 0.5 mA 9.5 10 10.5 V
VP= 14.4 V;
0.5 mA IREG 100 mA 9.5 10 10.5 V
VREG(drop) dropout voltage VP= 9.5 V; IREG =50mA 0.18 0.3 V
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
TDA3676T SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
TDA3676AT SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
2000 Feb 01 3
Philips Semiconductors Preliminary specification
Low dropout voltage/quiescent current
10 V voltage regulator with enable TDA3676
BLOCK DIAGRAM
handbook, halfpage
MGL836
REGULATOR
2, 3, 6, 7
1
GND
8
REG
VP
5
EN BAND GAP
TDA3676 THERMAL
PROTECTION
Fig.1 Block diagram.
PINNING
Note
1. All GND pins are connected to the lead frame and can
also be used to reduce the total thermal resistance
Rth(j-a) by soldering these pins to a ground plane.
The ground plane on the top side of the Printed-Circuit
Board (PCB) acts like a heat spreader.
SYMBOL PIN (SO8) DESCRIPTION
REG 1 regulator output
GND 2, 3, 6 and 7 ground; note 1
n.c. 4 not connected
EN 5 enable input
VP8 supply voltage
handbook, halfpage
1
2
3
4
8
7
6
5
MGL837
TDA3676
VP
GNDGND
GND
EN
n.c.
GND
REG
Fig.2 Pin configuration.
2000 Feb 01 4
Philips Semiconductors Preliminary specification
Low dropout voltage/quiescent current
10 V voltage regulator with enable TDA3676
FUNCTIONAL DESCRIPTION
The TDA3676 is a fixed 10 V regulator which can deliver
output currents up to 100 mA. The regulator is available in
an SO8 package with fused centre pins connected to the
lead frame. The regulator is intended for portable, mains,
telephone and automotive applications. To increase the
lifetime of batteries, a specially built-in clamp circuit keeps
the quiescent current of this regulator very low, also in
dropout and full load conditions.
The regulator remains operating down to very low supply
voltages and below this voltage it switches off.
A temperature protection circuit is included, which
switches off the regulator output at a junction temperature
above 150 °C.
A new output circuit guarantees the stability of the
regulator for a capacitor output circuit with an ESR up to
20 . If only a 100 nF capacitor is used, the regulator is
fully stable when IREG > 200 mA. This is very attractive as
the ESR of an electrolytic capacitor increases strongly at
low temperatures (no expensive tantalum capacitor is
required).
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
QUALITY SPECIFICATION
In accordance with
“SNW-FQ-611E”
.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VPsupply voltage
TDA3676T 33 V
TDA3676AT 45 V
VP(rp) reverse polarity supply voltage non-operating −−25 V
Ptot total power dissipation temperature of PCB ground
plane is 25 °C4.1 W
Tstg storage temperature non-operating 55 +150 °C
Tamb ambient temperature operating
TDA3676T 40 +85 °C
TDA3676AT 40 +125 °C
Tjjunction temperature operating 40 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient in free air; soldered 125 K/W
Rth(j-c) thermal resistance from junction to case to centre pins; soldered 30 K/W
2000 Feb 01 5
Philips Semiconductors Preliminary specification
Low dropout voltage/quiescent current
10 V voltage regulator with enable TDA3676
CHARACTERISTICS
VP= 14.4 V; Tamb =25°C; VI(EN) = 5 V; measured in test circuit of Fig.3; unless otherwise specified.
Notes
1. The regulator output will follow VPif VP<V
REG +V
REG(drop).
2. Limiting values as applicable for device type:
a) TDA3676T: VP33 V, 40 °CTamb +85 °C.
b) TDA3676AT: VP45 V, 40 °CTamb +125 °C.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply voltage: pin VP
VPsupply voltage regulator operating; note 1
TDA3676T 3 14.4 33 V
TDA3676AT 3 14.4 45 V
Iqquiescent current VP= 14.4 V; IREG = 0 mA;
VI(EN) =0V 415µA
V
P
= 14.4 V; IREG = 0 mA;
VI(EN) =5V 15 30 µA
11.5 V VP22 V; IREG =10mA 0.2 0.5 mA
11.5 V VP22 V; IREG =50mA 1.4 2.5 mA
Enable input: pin EN
VI(EN) enable input voltage enable off; VREG 0.8 V 1.0 +1.0 V
enable on; VREG 9.5 V 3.0 18 V
II(EN) enable input current VI(EN) =5V 0.3 −µA
Regulator output: pin REG; note 2
VREG output voltage 13 V VP22 V; IREG = 0.5 mA 9.6 10 10.4 V
11VVP45 V; IREG = 0.5 mA;
Tamb 125 °C9.5 10 10.5 V
0.5 mA IREG 100 mA;
Tamb 125 °C9.5 10 10.5 V
VREG(drop) dropout voltage VP= 9.5 V; IREG = 50 mA;
Tamb 85 °C0.18 0.3 V
VREG(stab) long-term stability voltage 20 mV/1000 h
VREG(line) line input regulation voltage 13 V VP16 V; IREG = 0.5 mA 110mV
12VVP22 V; IREG = 0.5 mA 130mV
12VVP45 V; Tamb 125 °C150mV
V
REG(load) load output regulation
voltage 0.5 mA IREG 50 mA;
Tamb 125 °C10 50 mV
SVRR supply voltage ripple
rejection fi= 120 Hz; Vi(ripple) = 1 V (RMS);
IREG = 0.5 mA 50 60 dB
IREG(crl) current limit VREG > 9.5 V 0.17 0.25 A
ILO(rp) output leakage current at
reverse polarity VP=15 V; VREG 0.3 V 1 500 µA
2000 Feb 01 6
Philips Semiconductors Preliminary specification
Low dropout voltage/quiescent current
10 V voltage regulator with enable TDA3676
TEST AND APPLICATION INFORMATION
a
ndbook, halfpage
MGL838
VP81
2, 3, 6, 7
C2
VI(EN) 5
TDA3676 10 µF
C1(1)
1 µF
VREG = 10 V
Fig.3 Test circuit.
VI(EN) =5V.
(1) C1 is optional (to minimize supply noise only).
handbook, halfpage
MDA961
ESR
()
C2 (µF)
102
10
1
101
10111010
2
stable region
(2)
(1)
Fig.4 Graph for selecting the value of the output
capacitor.
(1) Maximum ESR at 200 µAIREG 100 mA.
(2) Minimum ESR only when IREG 200 µA.
Noise
The output noise is determined by the value of the output
capacitor. The noise figure is measured at a bandwidth of
10 Hz to 100 kHz (see Table 1).
Table 1 Noise figures
Stability
The regulator is stabilized with an external capacitor
connected to the output. The value of this capacitor can be
selected using the diagrams shown in Figs 4 and 5.
The following four examples show the effects of the
stabilization circuit using different values for the output
capacitor.
OUTPUT
CURRENT
IREG (mA)
NOISE FIGURE (µV)
C2 = 10 µFC2=47µF C2 = 100 µF
0.5 550 320 300
50 650 400 400
handbook, halfpage
MDA962
ESR
()
IREG (mA)
103
102
10
22
1
101110 10
3
102
stable region
Fig.5 ESR as a function of IREG for selecting the
value of the output capacitor.
2000 Feb 01 7
Philips Semiconductors Preliminary specification
Low dropout voltage/quiescent current
10 V voltage regulator with enable TDA3676
EXAMPLE 1
The regulator is stabilized with an electrolytic capacitor of
68 µF (ESR = 0.5 ). At Tamb =40 °C, the capacitor
value is decreased to 22 µF and the ESR is increased to
3.5 . The regulator will remain stable at a temperature of
Tamb =40 °C.
EXAMPLE 2
The regulator is stabilized with an electrolytic capacitor of
10 µF (ESR = 3.3 ). At Tamb =40 °C, the capacitor
value is decreased to 3 µF and the ESR is increased to
20 . The regulator will remain stable at a temperature of
Tamb =40 °C.
EXAMPLE 3
The regulator is stabilized with a 100 nF MKT capacitor
connected to the output. Full stability is guaranteed when
the output current is larger then 200 µA. Because the
thermal influence on this capacitor value is almost zero,
the regulator will remain stable at a temperature of
Tamb =40 °C.
EXAMPLE 4
The regulator is stabilized with a 100 nF capacitor in
parallel with a electrolytic capacitor of 10 µF connected to
the output.
The regulator is now stable under all conditions and
independent of:
The ESR of the electrolytic capacitor
The value of the electrolytic capacitor
The output current.
Application circuits
The maximum output current of the regulator equals:
When Tamb =21°C and VP= 19 V, the maximum output
current equals 140 mA.
For successful operation of the IC (maximum output
current capability) special attention has to be given to the
copper area required as heatsink (connected to all
GND pins), the thermal capacity of the heatsink and its
ability to transfer heat to the external environment. It is
possible to reduce the total thermal resistance from
125 to 50 K/W.
APPLICATION CIRCUIT WITH BACKUP FUNCTION
Sometimes a backup function is needed to supply, for
example, a microcontroller for a short period of time when
the supply voltage spikes to 0 V (or even 1 V).
ThisfunctioncaneasilybebuiltwiththeTDA3676 by using
an output capacitor with a large value. When the supply
voltage is 0 V (or 1 V), only a small current will flow into
pin REG from this output capacitor (a few µA).
The application circuit is given in Fig.6.
IREG max() 150 Tamb
Rth(j-a) VPVREG
()×
-------------------------------------------------------
=
150 Tamb
100 VP10()×
----------------------------------------- (mA)=
n
dbook, halfpage
MGL839
VP81
2, 3, 6, 7
VREG = 10 V
C2(2)
VI(EN) 5
TDA3676
C1(1)
1 µF
Fig.6 Application circuit with backup function.
VI(EN) =5V.
(1) C1 is optional (to minimize supply noise only).
(2) C2 4700 µF.
2000 Feb 01 8
Philips Semiconductors Preliminary specification
Low dropout voltage/quiescent current
10 V voltage regulator with enable TDA3676
Additional application information
This section gives typical curves for various parameters measured on the TDA3676AT. Standard test conditions are:
VP= 14.4 V; Tamb =25°C.
handbook, halfpage
010 V
P
(V)
Iq
(µA)
20 30
25
0
20
15
10
5
MDA947
Fig.7 Quiescent current as a function of the
supply voltage.
IREG = 0 mA.
handbook, halfpage
010 50
4
3
1
0
2
20 30 VP (V)
Iq
(mA)
40
MDA949
Fig.8 Quiescent current as a function of high
supply voltage.
handbook, halfpage
40 0
(1)
(2)
160
2
1.5
0.5
0
1
40 80 Tj (°C)
Iq
(mA)
120
MDA951
Fig.9 Quiescent current as a function of the
junction temperature.
(1) Iqat 50 mA load.
(2) Iqat 10 mA load.
handbook, halfpage
5
0.36
0.40
0.44
0.48
10 15 VP (V)
Iq
(mA)
2520
MDA948
Fig.10 Quiescent current as a function of the
supply voltage.
IREG = 10 mA.
2000 Feb 01 9
Philips Semiconductors Preliminary specification
Low dropout voltage/quiescent current
10 V voltage regulator with enable TDA3676
handbook, halfpage
5
1.4
1.6
1.8
2
10 15 VP (V)
Iq
(mA)
2520
MDA950
Fig.11 Quiescent current as a function of the
supply voltage.
IREG = 50 mA.
handbook, halfpage
0 20 100
4
3
1
0
2
40 60 IREG (mA)
Iq
(mA)
80
MDA952
Fig.12 Quiescent current as a function of the load
current.
handbook, halfpage
50 200
10.2
9.9
10
10.1
050 T
j
(°C)
VREG
(V)
100 150
MGL840
Fig.13 Output voltage as a function of the
junction temperature.
IREG = 0 mA.
handbook, halfpage
50 200
12
0
4
8
050 T
j
(°C)
VREG
(V)
100 150
MGL841
Fig.14 Output voltage thermal protection as a
function of the junction temperature.
IREG = 0 mA.
2000 Feb 01 10
Philips Semiconductors Preliminary specification
Low dropout voltage/quiescent current
10 V voltage regulator with enable TDA3676
handbook, halfpage
040 I
REG (mA)
VREG(drop)
(mV)
80 120
500
400
200
100
300
MDA957
Fig.15 Dropout voltage as a function of the output
current.
handbook, halfpage
0
12
8
4
0100
VREG
(V)
IREG (mA)
200 300
MGL842
Fig.16 Fold back protection mode.
VP= 11.5 V with pulsed load.
handbook, halfpage
70
60
50
40
30
MDA956
10
SVRR
(dB)
f (Hz)
102103104105
(1)
(1)
(2)
(2)
(3)
(3)
Fig.17 SVRR as a function of the ripple frequency.
IREG = 10 mA; C2 = 10 µF.
(1) SVRR at RL= 100 Ω.
(2) SVRR at RL= 500 Ω.
(3) SVRR at RL=10k.
2000 Feb 01 11
Philips Semiconductors Preliminary specification
Low dropout voltage/quiescent current
10 V voltage regulator with enable TDA3676
PACKAGE OUTLINE
UNIT A
max. A1A2A3bpcD
(1) E(2) (1)
eH
ELL
pQZywv θ
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm
inches
1.75 0.25
0.10 1.45
1.25 0.25 0.49
0.36 0.25
0.19 5.0
4.8 4.0
3.8 1.27 6.2
5.8 1.05 0.7
0.6 0.7
0.3 8
0
o
o
0.25 0.10.25
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
1.0
0.4
SOT96-1
X
wM
θ
A
A1
A2
bp
D
HE
Lp
Q
detail X
E
Z
e
c
L
vMA
(A )
3
A
4
5
pin 1 index
1
8
y
076E03 MS-012
0.069 0.010
0.004 0.057
0.049 0.01 0.019
0.014 0.0100
0.0075 0.20
0.19 0.16
0.15 0.050 0.244
0.228 0.028
0.024 0.028
0.012
0.010.010.041 0.004
0.039
0.016
0 2.5 5 mm
scale
SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
97-05-22
99-12-27
2000 Feb 01 12
Philips Semiconductors Preliminary specification
Low dropout voltage/quiescent current
10 V voltage regulator with enable TDA3676
SOLDERING
Introduction to soldering surface mount packages
Thistext gives averybriefinsighttoa complex technology.
A more in-depth account of soldering ICs can be found in
our
“Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
Reflow soldering
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
totheprinted-circuitboardby screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
Wave soldering
Conventional single wave soldering is not recommended
forsurface mountdevices(SMDs)or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
For packages with leads on two sides and a pitch (e):
larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
Forpackages withleadsonfour sides,thefootprintmust
be placed at a 45°angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Manual soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
2000 Feb 01 13
Philips Semiconductors Preliminary specification
Low dropout voltage/quiescent current
10 V voltage regulator with enable TDA3676
Suitability of surface mount IC packages for wave and reflow soldering methods
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the
“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”
.
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
PACKAGE SOLDERING METHOD
WAVE REFLOW(1)
BGA, SQFP not suitable suitable
HLQFP, HSQFP, HSOP, HTSSOP, SMS not suitable(2) suitable
PLCC(3), SO, SOJ suitable suitable
LQFP, QFP, TQFP not recommended(3)(4) suitable
SSOP, TSSOP, VSO not recommended(5) suitable
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
2000 Feb 01 14
Philips Semiconductors Preliminary specification
Low dropout voltage/quiescent current
10 V voltage regulator with enable TDA3676
NOTES
2000 Feb 01 15
Philips Semiconductors Preliminary specification
Low dropout voltage/quiescent current
10 V voltage regulator with enable TDA3676
NOTES
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
2000 69
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Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553
Printed in The Netherlands 753503/02/pp16 Date of release: 2000 Feb 01 Document order number: 9397 750 06804