FMN1 IMN11 UMP1N FMP1 IMP11 UMN11N IMN10 UMN1IN UMP11N Diode, array, high speed switching, surface mount In these single packages, there are three or four diodes as shown in the circuit diagrams. Features available in SMD5 (FMT), UMD5 (UMS), SMD6 (IMD), and UMD6 (UM6) packages parts are marked as follows: FMN1 = UMNIN =N1 FMP1 = Pt UMP1N = P14 IMN10 = N10 UMN11N = N11 IMN1t =N11 UMP11N = P11 IMP11 = P11 suitable for automatic mounting on printed circuit board all diodes in the chip have similar characteristics Applications high speed switching UMN1N, UMP1N (UMD5) IMN10, IMN11, IMP11 (SMD6) Dimensions (Units : mm) FMN1, FMP1 (SMD5) 2.9+0.2 pyroe 1.940.2 =8.! 0.95 0.95 O.8+0.1 Aopen) | 1 ue o~0.1 pot i} Ades the = Ta a.37 ot. 0.158 o6 1! S (each lead has the same dimensions) 4 o o98, 008. 9.490.35 * 9.390.49 0 | 1.0 Min. D.8 Min, UMN11N, UMP11N (UMD6) 2.040.2 2.040.2 __2.90.2 11t9-2 0.940.) , To. 1340.1 0.9+0,! 1.940.2 ro 0.7 0.95 0.95 ee t 0. Ls O.8 0.65 0.7 Ao fete 7 Oe ~~ oc ; Slc me O~0. 41 a O~0.1 ay Fi 0~0.1 o 0 nu] 7 -- wi a) +90.1 Gototn he +921 c nae, os 0.1540.05 | 5 0.379-4, 0. iste. be : 2 olos 0.15+0.05 || ni th = = {each lead has the same dimensions) s (each lead has the same dimensions) {each lead has the same dimensions) o o _ Ag 0.95,0.95 x 045,035 0.35.0.45 scat 0.8 Min 65, 65, HUG, UU 0.9 Min DiodesDiode arrays FMN1, FMP1, 1MN10, 1MN11, 1MP11, UMN1N, UMP1N, UMN11N, UMP11N Equivalent circuits UMNIN FMP1 IMN10 iMN11 IMP11 [ 3 94 05 4 95 96 4 05 96 4 5 06 2 1 3 92 61 t FMN1 UMP1N UMN11N UMP11N 3 92 91 3 92 91 3 o2 91 3 92 of t Absolute maximum ratings (T, = 25C) Peak DC Peak Mean ' reverse | reverse | forward |rectifying Surge di oat on dunction Storage Part no. | voltage | voltage | current | current P P. P- 1ps) (Total) 3 Vam(V) | Va() | Ie(ma) | Io(may |, ! T(C) | Tetg (C rm (V) R(V) | Ie(mA) | Ip (mA) leurge (A) | Pa (mW) i CC) stg (C) FMN1 80 UMN1N 80 80 80 25 0.25 150 150 55 ~+ 150 FMP1 80 UMP1N 80 80 80 25 0.25 150 150 55 ~ + 150 IMN10 80 80 300 100 4 300! 150 55 ~ + 150 IMN11 300! UMN11N 80 80 300 100 4 150 150 55 ~ + 150 IMP11 300! UMP11N 80 80 300 100 4 150 150 -55 ~+ 150 1. Not to exceed 200 mw per element Diodes 233FMN1, FMP1, 1MN10, 1MN11, 1MP11, UMN1N, UMP1N, UMN11N, UMP11N Diode arrays Electrical characteristics (unless otherwise noted, T, = 25C) Forward Reverse Capacitance between . voltage current terminals Reverse recovery time Part no. Ve(V)| le jig (eA)| V_ /Cr(PF)| Vp f [ty (ns)| VR IF Ref Max | (mA) | Max (Vv) max. (Vv) (MHz) | Max (V) (mA) FMN1 . UMN1N 0.9 5 0.1 70 3.5 6 ! 4 6 5 Figure 8 FMP1 . UMP1N 0.9 5 0.1 70 3.5 6 1 4 6 5 Figure 8 IMN10 1.2 100 0.1 70 3.5 6 l 4 6 5 Figure 8 IMN11 . UMN11N 1.2 100 0.1 70 3.5 6 l 4 6 5 Figure 8 IMP 11 . UMP11N 1.2 100 0.1 70 3.5 6 1 4 6 5 Figure 8 Electrical characteristic curves 125 | & = 100 4 x E Z 10 a + o 7p To : er 5 6 & E 5? a sof ---- i 2 | 0 at g z 08 25] --- pot 3 | 2 a 02 o | | o. 0 25 50 75 100 126 180 0 02 04 0 08 1 AMBIENT TEMPERATURE : Ta (C) FORWARD VOLTAGE: V, (V) Figure 1 Figure 2 234 ROM Diodes1 000 gq 100 & + + iE + 10 Zz B & ry oc a > c oO > 10 oO o fc uy a & z Woot 2 WW Cc 8015 10 20 30 40 50 REVERSE VOLTAGE: V, (V) FORWARD VOLTAGE : Ve (V) Figure 3 Figure 4 1000 us = 3 < 7 = 100 4 f z bt 2 z a 2 ' " & z 3 4 1 = 2 bi Ww a 2 WwW woot 2 Lt E = 0.01 a 0 10 30 g 0 2 4 10 14 16 REVERSE VOLTAGE : Va (V) REVERSE VOLTAGE: V, (V) Figure 5 Figure 6 0.01 uF Diode under test e I = Puise generator ampling y output 50 92 50 2 | oscilloscope E > rc ua 3 Impulse i a Test circuit for @ measuring reverse w ne recovery time (t,,) a Outpulse ter rr x ~ FORWARD CURRENT : 1, (mA) Figure 7 Figure 8 Diodes Rom 235