ARF460A/G
ARF460B/G
125V, 150W, 65MHz
The ARF460A and ARF460B comprise a symmetric pair of common source RF power
transistors designed for push-pull scientifi c, commercial, medical and industrial RF power
amplifi er applications up to 65MHz. They have been optimized for both linear and high
effi ciency classes of operation.
• Low Cost Common Source RF Package.
• Low Vth thermal coeffi cient.
• Low Thermal Resistance.
• Optimized SOA for Superior Ruggedness
• RoHS Compliant
Symbol Parameter ARF460AG/BG Unit
VDSS Drain-Source Voltage 500 V
VDGO Drain-Gate Voltage 500
IDContinuous Drain Current @ TC = 25°C 14 A
VGS Gate-Source Voltage ±30 V
PDTotal Power Dissipation @ TC = 25°C 250 W
RJC Junction to Case 0.50 °C/W
TJ, TSTG Operating and Storage Junction Temperature Range -55 to 150 °C
TLLead Temperature: 0.063” from Case for 10 Sec. 300
Maximum Ratings All Ratings: TC =25°C unless otherwise specifi ed
Static Electrical Characteristics
Symbol Parameter Min Typ Max Unit
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) 500 V
VDS(ON) On State Drain Voltage 1 (ID(ON) = 7A, VGS = 10V) 4
IDSS
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25
A
Zero Gate Voltage Drain Current (VDS = 0.8VDSS, VGS = 0, TC = 125°C) 250
IGSS Gate-Source Leakage Current (VDS = ±30V, VDS = 0V) ±100 nA
gfs Forward Transconductance (VDS = 25V, ID = 7A) 3.3 5.5 8 mhos
VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 3 5 Volts
Microsemi Website - http://www.microsemi.com
050-5966 Rev E 10-2007
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
RF POWER MOSFET
N-CHANNEL ENHANCEMENT MODE
• Specifi ed 125 Volt, 40.68MHz Characteristics:
Output Power = 150 Watts.
Gain = 13dB (Class AB)
Effi ciency = 75% (Class C)
TO-247
Common
Source
ARF460AG/BG
Dynamic Characteristics
Symbol Parameter Test Conditions Min Typ Max Unit
CISS Input Capacitance VGS = 0V 1200 1400
pF
Coss Output Capacitance VDS = 150V 150 180
Crss Reverse Transfer Capacitance f = 1MHz 60 75
td(ON) Turn-on Delay Time VGS = 15V
VDD = 0.5VDSS
ID =ID[Cont.] @ 25°C
RG = 1.6
7
ns
trRise Time 6
td(off) Turn-off Delay Time 20
tfFall Time 4.0 7
Functional Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
GPS Common Source Amplifi er Power Gain f = 40.68MHz
Idq = 50mA VDD = 125V
POUT = 150W
13 15 dB
Drain Effi ciency 70 75 %
Electrical Ruggedness VSWR 10:1 No Degradation in Output Power
1. Pulse Test: Pulse width < 380 S, Duty Cycle < 2%.
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
050-5966 Rev E 10-2007
1 5 10 50 100 500
16
12
8
4
0
2 4 6 8 10
CAPACITANCE (pf)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
5000
1000
500
100
50
10
.1 .5 1 5 10 50 150
ID, DRAIN CURRENT (AMPERES)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55°C
TJ = -55°C
TJ = +125°C
TJ = +25°C
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
Ciss
Coss
Crss
56
10
5
1
.5
.1
1mS
10mS
100mS
DC
100uS
ARF460AG/BG
050-5966 Rev E 10-2007
TC, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
25
20
15
10
5
0
0 5 10 15 20 25 30
ID, DRAIN CURRENT (AMPERES)
VGS(th), THRESHOLD VOLTAGE
(NORMALIZED)
6.5V
5.5V
6V
7V
VGS=15 & 10V 9V
8V
4.5V
5V
ZqJC, THERMAL IMPEDANCE (°C/W)
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
SINGLE PULSE
0.5
0.1
0.3
0.7
0.9
0.05
0.60
0.50
0.40
0.30
0.20
0.10
0
Figure 9a, TRANSIENT THERMAL IMPEDANCE MODEL
0.0284
0.165
0.307
0.00155F
0.00934F
0.128F
Power
(Watts)
Junction
temp. ( ”C)
RC MODEL
Case temperature
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz) Zin ()Z
OL ()
2.0
13.5
27
40
65
20.9 - j 9.2
2.4 - j 6.8
.57 - j 2.6
.31 - j 0.5
.44 - j 1.9
38 - j 2.6
31 - j 14
19.6 - j 17.6
12.5 - j 15.8
6.0 - j 10.5
ZIN - Gate shunted with 25 Idq = 100mA
ZOL - Conjugate of optimum load for 150 Watts output at Vdd=125V
ARF460AG/BG
050-5966 Rev E 10-2007
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved.
TO-247 Package Outline
L1
C1
R2
R1
DUT
L2
L3
C3
C4
C7
C6
C2
C8
C9
L4
125V
+
-
RF
Output
RF
Input
C1 -- 2000 pF 100V NPO chip
mounted at gate lead
C2-C5 -- Arco 463 Mica trimmer
C6-C8 -- .1 μF 500V ceramic chip
C9 -- 2200 pF 500V chip
L1 -- 4t #20 AWG .25"ID .3 "L ~80nH
L2 -- 6t #16 AWG .312" ID .4"L ~185nH
L3 -- 15t #24 AWG .25"ID ~.85uH
L4 -- VK200-4B ferrite choke 3uH
R1-R2 -- 51 Ohm 0.5W Carbon
DUT = ARF460A/B
40.68 MHz Test Circuit
+
-
Bias
0 - 12V
C5
Gate ------- Drain
Source ---- Source
Drain ------- Gate
Device
ARF- A ARF- B
Source
NOTE: These two parts comprise a symmetric pair of RF
power transistors and meet the same electrical specifi cations.
The device pin-outs are the mirror image of each other to
allow ease of use as a push-pull pair.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 .185
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
