US4881 Bipolar Hall Switch Low Voltage & Very High Sensitivity Features and Benefits Applications Operating voltage range from 2.2V to 18V Automotive, Consumer and Industrial Very high magnetic sensitivity Solid-state switch CMOS technology Brushless DC motor commutation Chopper-stabilized amplifier stage Low current consumption Speed detection Open drain output Linear position detection Thin SOT23 3L and flat TO-92 3L both RoHS Compliant packages Angular position detection Proximity detection Ordering information Part No US4881ESE-AAA-000-RE US4881EUA-AAA-000-BU US4881LSE-AAA-000-RE US4881LUA-AAA-000-BU 1. Functional Diagram Temperature Code E (-40C to 85C) E (-40C to 85C) L (-40C to 150C) L (-40C to 150C) Package Code SE (TSOT-3L) UA (TO-92) SE (TSOT-3L) UA (TO-92) 2. General Description The Melexis US4881 is a bipolar Hall-effect switch designed in mixed signal CMOS technology. The device integrates a voltage regulator, Hall sensor with dynamic offset cancellation system, Schmitt trigger and an open-drain output driver, all in a single package. The low operating voltage and extended choice of temperature ranges make it suitable for use in automotive, industrial and consumer low voltage applications. The device is delivered in a Thin Small Outline Transistor (TSOT) for surface mount process and in a Plastic Single In-Line (TO-92 flat) for through-hole mount. Both 3-lead packages are RoHS compliant. REVISION 015 - JAN 17, 2018 3901004881 Page 1 of 12 US4881 Bipolar Hall Switch Low Voltage & Very High Sensitivity Contents 1. Functional Diagram................................................................................................................................................................ 1 2. General Description ............................................................................................................................................................... 1 3. Glossary of Terms .................................................................................................................................................................. 3 4. Absolute Maximum Ratings ................................................................................................................................................... 3 5. Pin Definitions and Descriptions ............................................................................................................................................ 3 6. General Electrical Specifications ............................................................................................................................................ 4 7. Magnetic Specifications ......................................................................................................................................................... 4 8. Output Behaviour versus Magnetic Pole ................................................................................................................................ 4 9. Detailed General Description ................................................................................................................................................. 5 10. Unique Features .................................................................................................................................................................. 5 11. Performance Graphs ............................................................................................................................................................ 6 11.1. Magnetic parameters vs. TA .............................................................................................................................................. 6 11.2. Magnetic parameters vs. VDD ............................................................................................................................................ 6 11.3. VDSon vs. TA........................................................................................................................................................................... 6 11.4. VDSon vs. VDD ........................................................................................................................................................................ 6 11.5. IDD vs. TA .............................................................................................................................................................................. 6 11.6. IDD vs. VDD ............................................................................................................................................................................ 6 11.7. IOFF vs. TA ............................................................................................................................................................................. 7 11.8. IOFF vs. VDD ........................................................................................................................................................................... 7 12. Test conditions .................................................................................................................................................................... 7 12.1. Supply Current ................................................................................................................................................................... 7 12.2. Output Saturation Voltage ................................................................................................................................................ 7 12.3. Output Leakage Current .................................................................................................................................................... 7 12.4. Magnetic Thresholds ......................................................................................................................................................... 7 13. Application Information ....................................................................................................................................................... 8 13.1. Typical Three-Wire Application Circuit ............................................................................................................................. 8 13.2. Two-Wire Circuit ................................................................................................................................................................ 8 13.3. Automotive and Harsh, Noisy Environments Three-Wire Circuit .................................................................................... 8 13.4. Application Comments....................................................................................................................................................... 8 14. Standard information regarding manufacturability of Melexis products with different soldering processes ........................ 9 15. ESD Precautions................................................................................................................................................................... 9 16. Package Information .......................................................................................................................................................... 10 16.1. SE Package (TSOT-3L) ....................................................................................................................................................... 10 16.2. UA Package (TO-92 flat) ................................................................................................................................................... 11 17. Contact .............................................................................................................................................................................. 12 18. Disclaimer.......................................................................................................................................................................... 12 REVISION 015 - JAN 17, 2018 3901004881 Page 2 of 12 US4881 Bipolar Hall Switch Low Voltage & Very High Sensitivity 3. Glossary of Terms MilliTesla (mT), Gauss Units of magnetic flux density: 1mT = 10 Gauss Restriction of Hazardous Substances Thin Small Outline Transistor (TSOT package) - also referred with the Melexis package code "SE" Electro-Static Discharge Brush-Less Direct-Current RoHS TSOT ESD BLDC 4. Absolute Maximum Ratings Parameter Supply Voltage Supply Current Output Voltage Output Current Storage Temperature Range Maximum Junction Temperature ESD Sensitivity (AEC Q100 002) Symbol VDD IDD VOUT IOUT TS TJ - Value 20 50 20 50 -50 to 150 165 2.5 Units V mA V mA C C kV Table 1: Absolute maximum ratings Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum- rated conditions for extended periods may affect device reliability. Operating Temperature Range Temperature Suffix "E" Temperature Suffix "K" Temperature Suffix "L" Symbol TA TA TA Value -40 to 85 -40 to 125 -40 to 150 Units C C C 5. Pin Definitions and Descriptions SE Pin No UA Pin No 1 1 2 3 3 2 Name VDD OUT GND Type Function Supply Supply Voltage pin Output Open Drain Output pin pin Ground Ground Table 2: Pin definitions and descriptions REVISION 015 - JAN 17, 2018 3901004881 Page 3 of 12 US4881 Bipolar Hall Switch Low Voltage & Very High Sensitivity 6. General Electrical Specifications o DC Operating Parameters TA = 25 C, VDD = 12V (unless otherwise specified) Parameter Symbol Test Conditions Min Supply Voltage VDD Operating 2.2 Supply Current IDD B < BRP 1.5 Output Saturation Voltage VDSon IOUT = 20mA, B > BOP Output Leakage Current IOFF B < BRP, VOUT = 24V Output Rise Time tr RL = 1k, CL = 20pF Output Fall Time tf RL = 1k, CL = 20pF Maximum Switching Frequency FSW SE Package Thermal Resistance RTH Single layer (1S) Jedec board UA Package Thermal Resistance RTH Typ 0.01 0.25 0.25 10 301 200 Max 18 5 0.5 10 Units V mA V A s s kHz C/W C/W Table 3: Electrical specifications 7. Magnetic Specifications o DC Operating Parameters TA = 25 C, VDD = 12V (unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Units Operating Point BOP -1 6 mT Release Point BRP -6 1 mT Hysteresis BHYST 2 6 mT Table 4: Magnetic specifications 8. Output Behaviour versus Magnetic Pole DC Operating Parameters TA = -40 C to 150 C, VDD = 2.2V to 18V (unless otherwise specified) Parameter Test Conditions (SE) OUT (SE) Test Conditions (UA) OUT (UA) South pole B < BRP High B > BOP Low North pole B > BOP Low B < BRP High Table 5: Output behaviour versus magnetic pole REVISION 015 - JAN 17, 2018 3901004881 Page 4 of 12 US4881 Bipolar Hall Switch Low Voltage & Very High Sensitivity 9. Detailed General Description Based on mixed signal CMOS technology, Melexis US4881 is a Hall-effect device with very high magnetic sensitivity. It allows using generic magnets, weak magnets or larger air gap. The chopper-stabilized amplifier uses switched capacitor technique to suppress the offset generally observed with Hall sensors and amplifiers. The CMOS technology makes this advanced technique possible and contributes to smaller chip size and lower current consumption when compared to the bipolar technology. The small chip size is also an important factor to minimize the effect of physical stress. This combination results in more stable magnetic characteristics and enables faster and more precise design. The operating voltage from 2.2V to 18V, "L", "K" and "E" operating temperature ranges and low current consumption make this device especially suitable for automotive, industrial and consumer low voltage applications. The output signal is open-drain type. Such output allows simple connectivity with TTL or CMOS logic by using a pull-up resistor tied between a pull-up voltage and the device output. 10. Unique Features The US4881 exhibits bipolar magnetic switching characteristics. Therefore, it operates with both south and north poles. Typically, the device behaves as a latch with symmetric operating and release switching points (BOP=|BRP|). This means magnetic fields with equivalent strength and opposite direction drive the output high and low. Removing the magnetic field (B0) keeps the output in its previous state. This latching property defines the device as a magnetic memory. Depending on the magnetic switching points, the device may also behave as a unipolar positive switch (B OP and BRP strictly positive) or unipolar negative switch with inversed output (B OP and BRP strictly negative). That is the output can be set high and low by using only one magnetic pole. In such case, removin =g the magnetic field changes the output level. In latch, positive or negative switch behaviour, a magnetic hysteresis BHYST keeps BOP and BRP separated by a minimal value. This hysteresis prevents the output from oscillating near the switching point. REVISION 015 - JAN 17, 2018 3901004881 Page 5 of 12 US4881 Bipolar Hall Switch Low Voltage & Very High Sensitivity 11. Performance Graphs 11.1. Magnetic parameters vs. TA 11.2. Magnetic parameters vs. VDD 11.3. VDSon vs. TA 11.4. VDSon vs. VDD 11.5. IDD vs. TA 11.6. IDD vs. VDD REVISION 015 - JAN 17, 2018 3901004881 Page 6 of 12 US4881 Bipolar Hall Switch Low Voltage & Very High Sensitivity 11.7. IOFF vs. TA 11.8. IOFF vs. VDD 12. Test conditions Note : DUT = Device Under Test 12.1. Supply Current 12.2. Output Saturation Voltage 12.3. Output Leakage Current 12.4. Magnetic Thresholds REVISION 015 - JAN 17, 2018 3901004881 Page 7 of 12 US4881 Bipolar Hall Switch Low Voltage & Very High Sensitivity 13. Application Information 13.1. Typical Three-Wire Application Circuit 13.2. Two-Wire Circuit 13.3. Automotive and Harsh, Noisy Environments Three-Wire Circuit 13.4. Application Comments For proper operation, a 100nF bypass capacitor should be placed as close as possible to the device between the VDD and ground pin. For reverse voltage protection, it is recommended to connect a resistor or a diode in series with the VDD pin. When using a resistor, three points are important: - the resistor has to limit the reverse current to 50mA maximum (VCC / R1 50mA) - the resulting device supply voltage VDD has to be higher than VDD min (VDD = VCC - R1.IDD) - the resistor has to withstand the power dissipated in reverse voltage condition (PD = VCC2 / R1) When using a diode, a reverse current cannot flow and the voltage drop is almost constant (0.7V). Therefore, a 100/0.25W resistor for 5V application and a diode for higher supply voltage are recommended. Both solutions provide the required reverse voltage protection. When a weak power supply is used or when the device is intended to be used in noisy environment, it is recommended that figure 13.3 from the Application Information section is used. The low-pass filter formed by R1 and C1 and the zener diode Z1 bypass the disturbances or voltage spikes occurring on the device supply voltage VDD. The diode D1 provides additional reverse voltage protection. REVISION 015 - JAN 17, 2018 3901004881 Page 8 of 12 US4881 Bipolar Hall Switch Low Voltage & Very High Sensitivity 14. Standard information regarding manufacturability of Melexis products with different soldering processes Our products are classified and qualified regarding soldering technology, solderability and moisture sensitivity level according to following test methods: Reflow Soldering SMD's (Surface Mount Devices) IPC/JEDEC J-STD-020 Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices (classification reflow profiles according to table 5-2) EIA/JEDEC JESD22-A113 Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing (reflow profiles according to table 2) Wave Soldering SMD's (Surface Mount Devices) and THD's (Through Hole Devices) EN60749-20 Resistance of plastic- encapsulated SMD's to combined effect of moisture and soldering heat EIA/JEDEC JESD22-B106 and EN60749-15 Resistance to soldering temperature for through-hole mounted devices Iron Soldering THD's (Through Hole Devices) EN60749-15 Resistance to soldering temperature for through-hole mounted devices Solderability SMD's (Surface Mount Devices) and THD's (Through Hole Devices) EIA/JEDEC JESD22-B102 and EN60749-21 Solderability For all soldering technologies deviating from above mentioned standard conditions (regarding peak temperature, temperature gradient, temperature profile etc) additional classification and qualification tests have to be agreed upon with Melexis. The application of Wave Soldering for SMD's is allowed only after consulting Melexis regarding assurance of adhesive strength between device and board. Melexis is contributing to global environmental conservation by promoting lead free solutions. For more information on qualifications of RoHS compliant products (RoHS = European directive on the Restriction Of the use of certain Hazardous Substances) please visit the quality page on our website: http://www.melexis.com/quality.aspx 15. ESD Precautions Electronic semiconductor products are sensitive to Electro Static Discharge (ESD). Always observe Electro Static Discharge control procedures whenever handling semiconductor products. REVISION 015 - JAN 17, 2018 3901004881 Page 9 of 12 US4881 Bipolar Hall Switch Low Voltage & Very High Sensitivity 16. Package Information 16.1. SE Package (TSOT-3L) Notes: Hall plate location 1. Dimension "D" and "E1" do not include mold flash or protrusions. Mold flash or protrusion shall not exceed 0.15mm on "D" and 0.25mm on "E" per side. 1.417 0.891 2. Dimension "b" does not include dambar protrusion. 3. All dimensions are in millimeters 0.275 TYP Marking: Top side : 4yww END VIEW 4 = part number (US4881) y = last digit of year ww = calendar week Package line TOP VIEW This table in mm N 3 min max A A1 A2 D E E1 L b c e e1 - 1.00 0.025 0.10 0.85 0.90 2.80 3.00 2.60 3.00 1.50 1.70 0.30 0.50 0.30 0.45 0.10 0.20 0.95 BSC 1.90 BSC 0 8 REVISION 015 - JAN 17, 2018 3901004881 Page 10 of 12 US4881 Bipolar Hall Switch Low Voltage & Very High Sensitivity 16.2. UA Package (TO-92 flat) Notes: 1. 2. Mold flashes and protrusion are not included. Gate burrs shall not exceed 0.127um on the top side. 2.2 1.8 1.2 1.6 0.395 0.455 This table in mm min max min max A D E F J L L1 S b1 b2 c e e1 2.80 3.20 3.90 4.30 1.40 1.60 0.00 0.20 2.51 2.72 14.0 15.0 1.55 1.75 0.63 0.84 0.35 0.44 0.43 0.52 0.35 0.44 2.51 2.57 1.24 1.30 5 MAX 5 REF 45 REF 3 REF REVISION 015 - JAN 17, 2018 3901004881 Page 11 of 12 US4881 Bipolar Hall Switch Low Voltage & Very High Sensitivity 17. Contact For the latest version of this document, go to our website at www.melexis.com. For additional information, please contact our Direct Sales team and get help for your specific needs: Europe, Africa Telephone: +32 13 67 04 95 Email : sales_europe@melexis.com Americas Telephone: +1 603 223 2362 Email : sales_usa@melexis.com Asia Email : sales_asia@melexis.com 18. Disclaimer The information furnished by Melexis herein ("Information") is believed to be correct and accurate. Melexis disclaims (i) any and all liability in connection with or arising out of the furnishing, performance or use of the technical data or use of the product(s) as described herein ("Product") (ii) any and all liability, including without limitation, special, consequential or incidental damages, and (iii) any and all warranties, express, statutory, implied, or by description, includ ing warranties of fitness for particular purpose, noninfringement and merchantability. No obligation or liability shall arise or flow out of Melexis' rendering of technical or other services. The Information is provided "as is" and Melexis reserves the right to change the Information at any time and without notice. Therefore, before placing orders and/or prior to designing the Product into a system, users or any third party should obtain the latest version of the relevant information to verify that the information being relied upon is current. Users or any third party must further determine the suitability of the Product for its application, including the level of reliability required and determine whether it is fit for a particular purpose. The Information is proprietary and/or confidential information of Melexis and the use thereof or anything described by the Information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights. This document as well as the Product(s) may be subject to export control regulations. Please be aware that export might require a prior authorization from competent authorities. The Product(s) are intended for use in normal commercial applications. Unless otherwise agreed upon in writing, the Product(s ) are not designed, authorized or warranted to be suitable in applications requiring extended temperature range and/or unusual environmental requirements. High reliability applications, such as medical life-support or lifesustaining equipment are specifically not recommended by Melexis. The Product(s) may not be used for the following applications subject to export control regulations: the development, product ion, processing, operation, maintenance, storage, recognition or proliferation of 1) chemical, biological or nuclear weapons, or for the development, production, maintenance or storage of missiles for such weapons: 2) civil firearms, including spare parts or ammunition for such arms; 3) defense related products, or other material for military use or for law enforcement; 4) any applications that, alone or in combination with other goods, substances or organisms could cause serious harm to persons or goods and that can be used as a means of violence in an armed conflict or any similar violent situation. The Products sold by Melexis are subject to the terms and conditions as specified in the Terms of Sale, which can be found at https://www.melexis.com/en/legal/terms-andconditions. This document supersedes and replaces all prior information regarding the Product(s) and/or previous versions of this document. Melexis NV (c) - No part of this document may be reproduced without the prior written consent of Melexis. (2016) ISO/TS 16949 and ISO14001 Certified REVISION 015 - JAN 17, 2018 3901004881 Page 12 of 12