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RCX050N25

Data Sheet

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10V Drive Nch MOSFET

RCX050N25

Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) Low input capacitance.

3) High ESD.

Application

Switching

Packaging specifications Inner circuit

Package Bulk

Code -

Basic ordering unit (pieces) 500

RCX050N25 

Absolute maximum ratings (Ta = 25C)

Symbol Limits Unit

Drain-source voltage VDSS 250 V

Gate-source voltage VGSS 30 V

Continuous ID5A

Pulsed IDP 20 A

Continuous IS5A

Pulsed ISP 20 A

Avalanche current IAS 2.5 A

Avalanche energy EAS 1.82 mJ

Power dissipation PD30 W

Channel temperature Tch 150 C

Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 L 500H, VDD=50V, RG=25, Tch=25C

*3 Limited only by maximum channel temperature allowed.

*4 TC=25C

Thermal resistance

Symbol Limits Unit

Channel to Case Rth (ch-c) 4.16 C / W

* TC=25°C

* Limited only by maximum channel temperature allowed.

Parameter

Type

Source current

(Body Diode)

Drain current

Parameter

TO-220FM

4.5 2.8

0.75

φ

3.2

(2)(

3)(1)

0.8

2.54 2.62.54

1.3 1.2

14.0

12.0

8.02.5

10.0

15.0

(1) Gate

(2) Drain

(3) Source 1BODYDIODE

*

*4

*1

*1,3

*3

*2

(1) (3)(2)

∗1

1/6 2011.10 - Rev.A

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Data Sheet

RCX050N25 　

Electrical characteristics (Ta = 25C)

Symbol Min. Typ. Max. Unit

Gate-source leakage IGSS --100 nA VGS=30V, VDS=0V

Drain-source breakdown voltage V(BR)DSS 250 - - V ID=1mA, VGS=0V

Zero gate voltage drain current IDSS --10AV

DS=250V, VGS=0V

Gate threshold voltage VGS (th) 3.5 - 5.5 V VDS=10V, ID=1mA

Forward transfer admittance l Yfs l 1.2 - - S VDS=10V, ID=2.5A

Input capacitance Ciss - 410 - pF VDS=25V

Output capacitance Coss - 30 - pF VGS=0V

Reverse transfer capacitance Crss - 15 - pF f=1MHz

Turn-on delay time td(on) - 17 - ns VDD 125V, ID=2.5A

Rise time tr- 18 - ns VGS=10V

Turn-off delay time td(off) - 20 - ns RL=50

Fall time tf- 12 - ns RG=10

Total gate charge Qg- 9.0 - nC VDD 125V, ID=5A

Gate-source charge Qgs - 3.5 - nC VGS=10V

Gate-drain charge Qgd - 3.5 - nC RL=25, RG=10

*Pulsed

Body diode characteristics (Source-Drain)

Symbol Min. Typ. Max. Unit

Forward Voltage VSD - - 1.5 V Is=5A, VGS=0V

*Pulsed

850 1100

Parameter Conditions

Conditions

m

Parameter

Static drain-source on-state

resistance RDS (on) ID=2.5A, VGS=10V

-

*

2/6 2011.10 - Rev.A

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Data Sheet

RCX050N25

Electrical characteristic curves (Ta=25C)

0

0.5

1

1.5

2

0 0.2 0.4 0.6 0.8 1

Drain Current : ID [A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=7.0V

VGS=10.0V

VGS=8.0V

Ta=25°C

Pulsed

0

1

2

3

4

5

0246810

Drain Current : ID [A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

VGS=10.0V

VGS=7.0V

VGS=8.0V

Ta=25°C

Pulsed

0.001

0.01

0.1

1

10

0 2 4 6 8 10

Drain Current : ID [A]

Gate-Source Voltage : VGS [V]

Fig.3 Typical Transfer Characteristics

V

DS

=10V

pulsed

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= -25°C

0

2

4

6

8

10

-50 -25 0 25 50 75 100 125 150

Gate Threshold Voltage : VGS(th) [V]

Channel Temperature : Tch [℃]

Fig.4 Gate Threshold Voltage vs. Channel Temperature

V

DS

=10V

ID

=1mA

pulsed

100

1000

10000

0.01 0.1 1 10

Static Drain-Source On-State Resistance

RDS(on) [mW]

Drain Current : ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

V

GS

=10V

pulsed

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= -25°C

0

500

1000

1500

2000

2500

3000

3500

4000

-50 -25 0 25 50 75 100 125 150

Static Drain-Source On-State Resistance

RDS(on) [mW]

Channel Temperature : Tch [℃]

Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature

V

GS

=10V

pulsed

ID=2.5A

ID=5.0A

3/6 2011.10 - Rev.A

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Data Sheet

RCX050N25

0.01

0.1

1

10

100

0.01 0.1 1 10

Forward Transfer Admittance

|Yfs| [S]

Drain Current : ID [A]

Fig.7 Forward Transfer Admittance vs. Drain Current

V

DS

=10V

pulsed

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= -25°C

0.01

0.1

1

10

0.0 0.5 1.0 1.5

Source Current : IS [A]

Source-Drain Voltage : VSD [V]

Fig.8 Source Current vs. Source-Drain Voltage

V

GS

=0V

pulsed

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= -25°C

1

10

100

1000

10000

0.01 0.1 1 10

Switching Time : t [ns]

Drain Current : ID [A]

Fig.10 Switching Characteristics

td(on)

tr

td(off)

tf

V

DD

≒125V

V

GS=10V

R

G=10Ω

T

a=25°C

Pulsed

0

5

10

15

0 5 10 15 20

Gate-Source Voltage : VGS [V]

Total Gate Charge : Qg [nC]

Fig.11 Dynamic Input Characteristics

T

a=25

°

C

V

DD

=125V

ID

=5A

Pulsed

1

10

100

1000

0.01 0.1 1 10 100 1000

Capacitance : C [pF]

Drain-Source Voltage : VDS [V]

Fig.12 Typical Capacitance vs. Drain-Source Voltage

T

a=25

°

C

f=1MHz

VGS=0V

Ciss

Coss

Crss

0

500

1000

1500

2000

2500

3000

0 2 4 6 8 10 12 14 16 18 20

Static Drain-Source On-State Resistance

RDS(on) [mW]

Gate-Source Voltage : VGS [V]

Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage

ID=5.0A

ID=2.5A

Ta=25°C

Pulsed

4/6 2011.10 - Rev.A

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Data Sheet

RCX050N25

10

100

1000

0 1 10

Reverse Recovery Time : trr [ns]

Source Current : IS [A]

Fig.13 Reverse Recovery Time vs. Source Current

T

a=25

°

C

V

gs=0V

di/dt=100A/us

Pulsed

0.01

0.1

1

10

100

0.1 1 10 100 1000

Drain Current : ID [ A ]

Drain-Source Voltage : VDS [ V ]

Fig.14 Maximum Safe Operating Area

T

a=25

°

C

Single Pulse

Operation in this area

is limited by RDS(on)

(VGS = 10V)

PW = 100μs

PW = 1ms

PW = 10ms

0.001

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Normalized Transient Thermal Resistance : r（t）

Pulse width : Pw (s)

Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width

T

a=25

°

C

Single Pulse

Rth

(ch-a)=61.4

°

C/W

Rth(ch-a)(t)=r(t)×Rth(ch-a)

5/6 2011.10 - Rev.A

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Data Sheet

RCX050N25 　

Measurement circuits

F

ig.1-1 Switching Time Measurement Circu

it

VGS

RG

VDS

D.U.T.

ID

RL

VDD

Fig.1-2 Switching Waveforms

90%

90% 90

%

10% 10%

50%

10%

50%

V

GS

Pulse width

V

DS

t

on

t

off

t

r

t

d(on)

t

f

t

d(off)

Fig.2-2 Gate Charge Waveform

V

G

V

GS

Charge

Q

g

Q

gs

Q

gd

Fig.3-1 Avalanche Measurement Circuit

VGS

RG

VDS

D.U.T.

IAS

L

VDD

Fig.3-2 Avalanche Waveform

I

AS

V

DD

V

(BR)DSS

I

AS

2

L

E

AS

=V

(BR)DSS

-

V

DD

V

(BR)DSS

1

2

F

ig.2-1 Gate Charge Measurement Circuit

V

GS

I

G(Const.)

R

G

V

D

S

D.U.T.

I

D

R

L

V

DD

6/6 2011.10 - Rev.A

R1120A

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Notes