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DATA SH EET
Product data sheet
Supersedes data of 2002 Feb 18
2004 Mar 22
DISCRETE SEMICONDUCTORS
PDZ-B series
Voltage regulator diodes
2004 Mar 22 2
NXP Semiconductors Product data sheet
Voltage regulator diodes PDZ-B series
FEATURES
•Total power dissipation: max. 400 mW
•Small plastic package suitable for surface mounted
design
•Wide variety of voltage ranges: nominal 2.4 to 36 V
(E24 range)
•Tolerance approximately ±2%.
APPLICATIONS
•General voltage regulation.
DESCRIPTION
Low-power gen eral purpose voltage regulator diodes in a
small plastic SMD SOD323 (SC -76) package.
PINNING
PIN DESCRIPTION
1cathode
2anode
Fig.1 Simplified outline (SOD323; SC-76) and
symbol.
handbook, halfpage
;
;
12
Top view
MAM387
The marking bar indicates the cathode.
MARKING
ORDERING INFORMATION
TYPE
NUMBER MARKING
CODE TYPE
NUMBER MARKING
CODE TYPE
NUMBER MARKING
CODE TYPE
NUMBER MARKING
CODE
PDZ2.4B Z0 PDZ5.1B Z8 PDZ11B ZG PDZ24B ZQ
PDZ2.7B Z1 PDZ5.6B Z9 PDZ12B ZH PDZ27B ZR
PDZ3.0B Z2 PDZ6.2B ZA PDZ13B ZJ PDZ30B ZS
PDZ3.3B Z3 PDZ6.8B ZB PDZ15B ZK PDZ33B ZT
PDZ3.6B Z4 PDZ7.5B ZC PDZ16B ZL PDZ36B ZU
PDZ3.9B Z5 PDZ8.2B ZD PDZ18B ZM
PDZ4.3B Z6 PDZ9.1B ZE PDZ20B ZN
PDZ4.7B Z7 PDZ10B ZF PDZ22B ZP
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
PDZ2.4B to
PDZ36B −plastic surface mounted package; 2 leads SOD323
2004 Mar 22 3
NXP Semiconductors Pr oduct data sheet
Voltage regulator diodes PDZ-B series
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).
Note
1. Device mounted o n a printed-circuit board me asuring 11 × 25 × 1.6 mm.
THERMAL CHARACTE RISTICS
Note
1. Device mounted o n a printed-circuit board me asuring 11 × 25 × 1.6 mm.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
IFcontinuous forward current −200 mA
IZSM non-repetitive peak re verse current tp = 100 μs; square wave;
Tamb = 25 °C prior to surge see Table 2
Ptot total power dissipation Tamb = 25 °C; note 1;
see Fig.2 −400 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-s) thermal resistance from junction to soldering point 130 K/W
Rth(j-a) thermal resistance from junction to ambient note 1 340 K/W
2004 Mar 22 4
NXP Semiconductors Pr oduct data sheet
Voltage regulator diodes PDZ-B series
CHARACTERISTICS
Table 1 Total series
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
VFforward voltage IF = 10 mA; see Fig.3 0.9 V
IF = 100 mA; see Fig.3 1.1 V
IRreverse current
PDZ2.4B VR = 1 V 50 μA
PDZ2.7B VR = 1 V 20 μA
PDZ3.0B VR = 1 V 10 μA
PDZ3.3B VR = 1 V 5 μA
PDZ3.6B VR = 1 V 5 μA
PDZ3.9B VR = 1 V 3 μA
PDZ4.3B VR = 1 V 3 μA
PDZ4.7B VR = 1 V 2 μA
PDZ5.1B VR = 1.5 V 2 μA
PDZ5.6B VR = 2.5 V 1 μA
PDZ6.2B VR = 3 V 500 nA
PDZ6.8B VR = 3.5 V 500 nA
PDZ7.5B VR = 4 V 500 nA
PDZ8.2B VR = 5 V 500 nA
PDZ9.1B VR = 6 V 500 nA
PDZ10B VR = 7 V 100 nA
PDZ11B VR = 8 V 100 nA
PDZ12B VR = 9 V 100 nA
PDZ13B VR = 10 V 100 nA
PDZ15B VR = 11 V 50 nA
PDZ16B VR = 12 V 50 nA
PDZ18B VR = 13 V 50 nA
PDZ20B VR = 15 V 50 nA
PDZ22B VR = 17 V 50 nA
PDZ24B VR = 19 V 50 nA
PDZ27B VR = 21 V 50 nA
PDZ30B VR = 23 V 50 nA
PDZ33B VR = 25 V 50 nA
PDZ36B VR = 27 V 50 nA
2004 Mar 22 5
NXP Semiconductors Product data sheet
Voltage regulator diodes PDZ-B series
Table 2 Per type
Tj = 25 °C unless otherwise specified.
TYPE
NUMBER
WORKING VOLTAGE
VZ (V)
at IZ = 5 mA
DIFFERENTIAL RESISTANCE
rdif (Ω)
TEMP. COEFF.
SZ (mV/K)
at IZ = 5 mA
(see Figs 4 and 5)
DIODE CAP.
Cd (pF) at
f = 1 MHz;
VR = 0
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A) at tp = 100 μs;
Tamb = 25 °C
MIN. MAX. MAX. at IZ
(mA) MAX. at IZ
(mA) TYP. MAX. MAX.
PDZ2.4B 2.43 2.63 1 000 0.5 100 5−1.6 450 8.0
PDZ2.7B 2.69 2.91 1 000 0.5 100 5−2.0 440 8.0
PDZ3.0B 2.85 3.07 1 000 0.5 95 5−2.1 425 8.0
PDZ3.3B 3.32 3.53 1 000 0.5 95 5−2.4 410 8.0
PDZ3.6B 3.60 3.85 500 1.0 90 5−2.4 390 8.0
PDZ3.9B 3.89 4.16 500 1.0 90 5−2.5 370 8.0
PDZ4.3B 4.17 4.48 600 1.0 90 5−2.5 350 8.0
PDZ4.7B 4.55 4.75 600 1.0 90 5−1.4 325 8.0
PDZ5.1B 4.96 5.20 250 0.5 60 50.3 300 5.5
PDZ5.6B 5.48 5.73 100 0.5 50 51.9 275 5.5
PDZ6.2B 6.06 6.33 80 0.5 50 52.7 250 5.5
PDZ6.8B 6.65 6.93 60 0.5 40 53.4 215 5.5
PDZ7.5B 7.28 7.60 60 0.5 10 54.0 170 3.5
PDZ8.2B 8.02 8.36 60 0.5 10 54.6 150 3.5
PDZ9.1B 8.85 9.23 60 0.5 10 55.5 120 3.5
PDZ10B 9.77 10.21 60 0.5 10 56.4 110 3.5
PDZ11B 10.78 11.22 60 0.5 10 57.4 108 3.0
PDZ12B 11.74 12.24 80 0.5 10 58.4 105 3.0
PDZ13B 12.91 13.49 80 0.5 10 59.4 103 2.5
PDZ15B 14.34 14.98 80 0.5 15 511.4 99 2.0
PDZ16B 15.85 16.51 80 0.5 20 512.4 97 1.5
PDZ18B 17.56 18.35 80 0.5 20 514.4 93 1.5
PDZ20B 19.52 20.39 100 0.5 20 516.4 88 1.5
PDZ22B 21.54 22.47 100 0.5 25 518.4 84 1.3
PDZ24B 23.72 24.78 120 0.5 30 520.4 80 1.3
PDZ27B 26.19 27.53 150 0.5 40 523.4 73 1.0
PDZ30B 29.19 30.69 200 0.5 40 526.6 66 1.0
PDZ33B 32.15 33.79 250 0.5 40 529.7 60 0.9
PDZ36B 35.07 36.87 300 0.5 60 533.0 59 0.8
2004 Mar 22 6
NXP Semiconductors Pr oduct data sheet
Voltage regulator diodes PDZ-B series
GRAPHICAL DATA
Fig.2 Power derating curve.
handbook, halfpage
0 50 100 200
Tamb (°C)
Ptot
(mW)
500
400
300
100
0
200
150
MBK245
Tj = 25 °C.
Fig.3 Forward current as a function of forward
voltage; typical values.
handbook, halfpage
0.6 1
300
100
0
200
MBG781
0.8 VF (V)
IF
(mA)
Fig.4 Temperature coefficient as a functi on of
working current; typical values.
PDZ2.4B to PDZ4.3B.
Tj = 25 °C to 150 °C.
handbook, halfpage
060
0
−2
−3
−1
MGL273
20 40 IZ (mA)
SZ
(mV/K) 4.3
3.9
3.6
3.3 3.0
2.4
2.7
Fig.5 Temperature coefficient as a functi on of
working current; typical values.
PDZ4.7 B to PDZ12B.
Tj = 25 °C to 150 °C.
handbook, halfpage
02016
10
0
−5
5
MGL274
4812 IZ (mA)
SZ
(mV/K)
4.7
12
11
10
9.1
8.2
7.5
6.8 6.2
5.6
5.1
2004 Mar 22 7
NXP Semiconductors Pr oduct data sheet
Voltage regulator diodes PDZ-B series
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOD323 SC-76
SOD32
03-12-17
06-03-16
Note
1. The marking bar indicates the cathode
UNIT A
mm 0.05
1.1
0.8 0.40
0.25 0.25
0.10 1.8
1.6 1.35
1.15 2.7
2.3 0.45
0.15
A1
max
DIMENSIONS (mm are the original dimensions)
lastic surface-mounted package; 2 leads
01
(1)
21
2 mm
scale
bpc D E HDQ
0.25
0.15
Lpv
0.2
A
D
A
E
Lp
bp
detail X
A1c
Q
HDvA
M
X
2004 Mar 22 8
NXP Semiconductors Pr oduct data sheet
Voltage regulator diodes PDZ-B series
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s ) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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NXP Semiconductors
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R76/05/pp9 Date of release: 2004 Mar 22 Document orde r number: 9397 750 12615