PRELIMINARY GA150TD120K
]HALF-BRODGE IGBT DOUBLE INT-A -PAK Short Circuit Rated
Ultra-FastTM Speed IGBT
Features
•Generation 5 IGBT NPT technology VCES=1200V
•UltraFast optimized high operating
frequencies 8-40 kHz in hard switching, >200 VCE(on) typ.=2.5V
kHz in resonant mode.
•Very low conduction and switching losses @VGE=15V,IC=150A
•HEXFRED TM antiparallel diodes with ultra-soft
recovery
•Industry standard package
•UL recongnition pending
•Short circuit rated 10 µs
Benefits
•Increased operating efficiency
•Direct mounting to heatsink
•Performance optimized for power conversion: UPS,
SMPS, Welding,Mortor Control
•Lower EMI, requries less snubbing
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector- to- Emitter Voltage 1200 V
IC @ Tc=25oC Continuous Collector Current 210
IC @ Tc=85oC Continuous Collector Current 150
ICM Pulsed collector Current 300 A
ILM Peak switching Current 300
IFM Peak Diode Forward Current 300
VGE Gate- to- Emitter Voltage ±20 V
VISOL RMS Isolation Voltage, Any Terminal To Case, t =1 min 2500
PD
@ TC
=25oC Maximum Power Dissipation 1250 W
PD
@ TC
=85oC Maximum Power Dissipation 650
TJOperating Junction Temperature Range -40 to +150 oC
TSTG Storage Temperature Range -40 to +125
Termal / Mechanical Characteristics
Parameter Typ. Max. Units
RθJC Termal Resistance, Junction-to- Case- IBGT - 0.10
RθJC Termal Resistance, Junction-to- Case- Diode - 0.15 oC/W
RθCS Termal Resistance, Csar-to- Sink- Module 0.1 -
Mouting Torque, Case-to-Heatsink - 4.0 N.m
Mouting Torque, Case-to-Terminal 1,2 & 3 - 3.0
Weight of Module 400 - g
1
Electrical Characteristics @ TJ=25oC(unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200
VGE=0V,
IC=1mA
VCE(ON) Collector-to-Emitter Voltage
2.5
VGE=15V, IC=150A
2.7
V VGE=15V, IC=150A,TJ=125oC
VGE(th)Gate Threshold Voltage 4.5
5.5 IC=1.75mA
DVGE(th)DTJTemperature Coeff. of Threshold Voltage
-11
mV/oCVCE=VGE,
IC=1.75mA
gfe Forward Ttansconductance
201
S VCE=25V, IC=150A
ICES Collector - to - Emitter Leaking Current
2.0 mA VGE=0V, VCE=1200V
20 VGE=0V, VCE=1200V,
TJ=125oC
VFM Diode Forward Voltage - Maximum
2.1 2.5 V IF=150A , VGE=0V
1.9
IF=150A , VGE=0V ,TJ=125oC
IGES Gate - to - Emitter Leakage Current
500 nA VGE=±20V
Dynamic Characteristics - TJ=125oC (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
QgTotal gate charge ( turn - on ) 1440 1710 VCC= 400V VGE=15V
Qge Gate - Emitter charge ( turn - on ) 192 288 nC IC=171A
Qgc Gate - Collector charge ( turn - on ) 377 565 TJ =25oC
Td(on) Turn - On Delay Time 380 RG1 =15Ω , RG2 = 0Ω
trRise Time 208 nS IC = 150A
Td(off) Turn - Off Delay Time 412 VCC= 720V
tfFall Time 100 VGE=±15V
Eon Turn - On Switching Energy 34
Eoff(1) Total Switching Energy 18 mJ
Ets(1) Turn - On Switching Energy 52 70
Cies Input Capacitance 25643 VGE = 0V
Coes Output Capacitance 1139 pF VCC = 30V
Cres Reverse Transfer Capacitance 222 f =1MHZ
trr Diode Reverse Recovery Time 186 nS IC = 150A
Irr Diode Peak Reverse Current 131 A RG1=15Ω
Qrr Diode Recovery Charge 12383 nC RG2=0Ω
di(rec)M/dt Diode Peak Rate of Fall of Recovery 2520 A/µs VCC=720V
During tb di/dt=1294A/µs
Tsc Short circuit withstand time 10 µsVCC=720V, VGE=±15V Min.
RG1=15Ω, VCEP=1100V
GA150TD120K
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