PRELIMINARY GA150TD120K ]HALF-BRODGE IGBT DOUBLE INT-A -PAK Short Circuit Rated Ultra-FastTM Speed IGBT Features * * VCES=1200V Generation 5 IGBT NPT technology UltraFast optimized high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode. Very low conduction and switching losses HEXFRED TM antiparallel diodes with ultra-soft recovery Industry standard package UL recongnition pending Short circuit rated 10 s * * * * * VCE(on) typ.=2.5V @VGE=15V,IC=150A Benefits * * * Increased operating efficiency Direct mounting to heatsink Performance optimized for power conversion: UPS, SMPS, Welding,Mortor Control Lower EMI, requries less snubbing * Absolute Maximum Ratings Parameter VCES IC @ Tc=25oC IC @ Tc=85oC ICM ILM IFM VGE VISOL PD @ TC =25oC PD @ TC =85oC TJ TSTG Collector- to- Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed collector Current Peak switching Current Peak Diode Forward Current Gate- to- Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t =1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Termal / Mechanical Characteristics RJC RJC RCS 1 Max. Units 1200 210 150 300 300 300 20 2500 1250 650 -40 to +150 -40 to +125 V A V W C o Parameter Typ. Max. Termal Resistance, Junction-to- Case- IBGT Termal Resistance, Junction-to- Case- Diode Termal Resistance, Csar-to- Sink- Module Mouting Torque, Case-to-Heatsink Mouting Torque, Case-to-Terminal 1,2 & 3 Weight of Module 0.1 400 0.10 0.15 4.0 3.0 - Units C/W o N.m g GA150TD120K Electrical Characteristics @ TJ=25oC(unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 VGE=0V, IC=1mA VCE(ON) Collector-to-Emitter Voltage 2.5 VGE=15V, IC=150A 2.7 V VGE=15V, IC=150A,TJ=125oC VGE(th) Gate Threshold Voltage 4.5 5.5 DVGE(th)DTJ Temperature Coeff. of Threshold Voltage -11 gfe Forward Ttansconductance 201 S VCE=25V, IC=150A ICES Collector - to - Emitter Leaking Current 2.0 mA VGE=0V, VCE=1200V 20 IC=1.75mA mV/oC VCE=VGE, IC=1.75mA VGE=0V, VCE=1200V, TJ=125oC VFM IGES Diode Forward Voltage - Maximum Gate - to - Emitter Leakage Current 2.1 2.5 1.9 500 V IF=150A , VGE=0V IF=150A , VGE=0V ,TJ=125oC nA VGE=20V Dynamic Characteristics - TJ=125oC (unless otherwise specified) Typ. Max. Qg Parameter Total gate charge ( turn - on ) Min. 1440 1710 Qge Gate - Emitter charge ( turn - on ) 192 288 Qgc Gate - Collector charge ( turn - on ) 377 565 Td(on) Turn - On Delay Time 380 Units Conditions VCC= 400V VGE=15V nC IC=171A TJ =25oC RG1 =15 , RG2 = 0 tr Rise Time 208 Td(off) Turn - Off Delay Time 412 VCC= 720V tf Fall Time 100 VGE=15V Eon Turn - On Switching Energy 34 Eoff(1) Total Switching Energy 18 Ets(1) Turn - On Switching Energy 52 70 Cies Input Capacitance 25643 Coes Output Capacitance 1139 Cres Reverse Transfer Capacitance 222 nS IC = 150A mJ VGE = 0V pF VCC = 30V f =1MHZ trr Diode Reverse Recovery Time 186 nS IC = 150A Irr Diode Peak Reverse Current 131 A RG1=15 Qrr Diode Recovery Charge 12383 nC RG2=0 di(rec)M/dt Diode Peak Rate of Fall of Recovery 2520 A/s During tb Tsc Short circuit withstand time VCC=720V di/dt=1294A/s 10 s VCC=720V, VGE=15V Min. RG1=15, VCEP=1100V 2