Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A12A120A/D Integrated Power Stage for 2.0 hp Motor Drives (This device is not recommended for new designs) (This device is replaced by MHPM7A10S120DC3) This module integrates a 3-phase input rectifier bridge, 3-phase output inverter, brake transistor/diode, current sense resistor and temperature sensor in a single convenient package. The output inverter utilizes advanced insulated gate bipolar transistors (IGBT) matched with free-wheeling diodes to give optimal dynamic performance. It has been configured for use as a three-phase motor drive module or for many other power switching applications. The top connector pins have been designed for easy interfacing to the user's control board. * DC Bus Current Sense Resistor Included * Short Circuit Rated 10 s @ 25C, 600V * Temperature Sensor Included * Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms) * Convenient Package Outline 12 AMP, 1200 VOLT HYBRID POWER MODULE Recognized * UL * Access to Positive and Negative DC Bus * Visit our website at http://www.mot-sps.com/tsg/ PLASTIC PACKAGE CASE 440-02, Style 1 MAXIMUM DEVICE RATINGS (TJ = 25C unless otherwise noted) Rating Symbol Value Unit VRRM 1200 V IO 12 A IFSM 200 A IGBT Reverse Voltage VCES 1200 V Gate-Emitter Voltage VGES 20 V Continuous IGBT Collector Current ICmax 12 A Peak Repetitive IGBT Collector Current(2) IC(pk) 24 A Continuous Free-Wheeling Diode Current IFmax 12 A Peak Repetitive Free-Wheeling Diode Current(2) IF(pk) 24 A IGBT Power Dissipation per die (TC = 95C) PD 60 W Free-Wheeling Diode Power Dissipation per die (TC = 95C) PD 40 W Junction Temperature Range TJ - 40 to +125 C Short Circuit Duration (VCE = 600V, TJ = 25C) tsc 10 s INPUT RECTIFIER BRIDGE Peak Repetitive Reverse Voltage (TJ = 125C) Average Output Rectified Current Peak Non-repetitive Surge Current (1/2 cycle)(1) OUTPUT INVERTER (1) 1 cycle = 50 or 60 Hz (2) 1 ms = 1.0% duty cycle REV 2 IGBT Motorola Motorola, Inc. 1998 Device Data 1 MHPM7A12A120A MAXIMUM DEVICE RATINGS (continued) (TJ = 25C unless otherwise noted) Rating Symbol Value Unit IGBT Reverse Voltage VCES 1200 V Gate-Emitter Voltage VGES 20 V Continuous IGBT Collector Current ICmax 12 A Peak Repetitive IGBT Collector Current(2) IC(pk) 24 A PD 60 W Peak Repetitive Output Diode Reverse Voltage (TJ = 125C) VRRM 1200 V Continuous Output Diode Current IFmax 12 A Peak Output Diode Current IF(pk) 24 A VISO 2500 Vac Operating Case Temperature Range TC - 40 to + 90 C Storage Temperature Range Tstg - 40 to +125 C - 6.0 lb-in BRAKE CIRCUIT IGBT Power Dissipation (TC = 95C TOTAL MODULE Isolation Voltage (47-63 Hz, 1.0 Minute Duration) Mounting Torque ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Leakage Current (VRRM = 1200 V) IR - 5.0 50 A Forward Voltage (IF = 12 A) VF - 0.97 1.5 V RJC - - 2.9 C/W Gate-Emitter Leakage Current (VCE = 0 V, VGE = 20 V) IGES - - 20 A Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V) TJ = 25C TJ = 125C ICES - - 6.0 2000 100 INPUT RECTIFIER BRIDGE Thermal Resistance (Each Die) OUTPUT INVERTER A Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) VGE(th) 4.0 6.0 8.0 V Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0) V(BR)CES 1200 - - V Collector-Emitter Saturation Voltage (IC = 12 A, VGE = 15 V) VCE(SAT) - 2.4 3.5 V Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz) Cies - 1840 - pF Input Gate Charge (VCE = 600 V, IC = 12 A, VGE = 15 V) QT - 66 - nC Fall Time - Inductive Load (VCE = 600 V, IC = 12 A, VGE = 15 V, RG(off) = 20 ) tf - 300 500 ns Turn-On Energy (VCE = 600 V, IC = 12 A, VGE = 15 V, RG(on) = 220 ) Eon - - 2.0 mJ Turn-Off Energy (VCE = 600 V, IC = 12 A, VGE = 15 V, RG(off) = 20 ) Eoff - - 2.0 mJ Free Wheeling Diode Forward Voltage (IF = 12 A, VGE = 0 V) VF - 1.6 2.2 V Free Wheeling Diode Reverse Recovery Time (IF = 12 A, V = 600 V, di/dt = 100 A/s) trr - 170 200 ns Free Wheeling Diode Stored Charge (IF = 12 A, V = 600 V, di/dt = 100 A/s) Qrr - 575 900 nC Thermal Resistance - IGBT (Each Die) RJC - - 1.7 C/W Thermal Resistance - Free-Wheeling Diode (Each Die) RJC - - 2.7 C/W (2) 1.0 ms = 1.0% duty cycle 2 Motorola IGBT Device Data MHPM7A12A120A ELECTRICAL CHARACTERISTICS (continued) (TJ = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Gate-Emitter Leakage Current (VCE = 0 V, VGE = 20 V) IGES - - 20 A Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V) TJ = 25C TJ = 125C ICES - - 6.0 2000 100 VGE(th) 4.0 6.0 8.0 V Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0) V(BR)CES 1200 - - V Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 12 A) BRAKE CIRCUIT Gate-Emitter Threshold Voltage (VCE = VGE, IC = 10 mA) A VCE(SAT) - 2.4 3.5 V Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz) Cies - 1840 - pF Input Gate Charge (VCE = 600 V, IC = 12 A, VGE = 15 V) QT - 66 - nC Fall Time - Inductive Load (VCE = 600 V, IC = 12 A, VGE = 15 V, RG(off) = 20 ) tf - 300 500 ns Turn-On Energy (VCE = 600 V, IC = 12 A, VGE = 15 V, RG(on) = 220 ) Eon - - 2.0 mJ Turn-Off Energy (VCE = 600 V, IC = 12 A, VGE = 15 V, RG(off) = 20 ) Eoff - - 2.0 mJ Output Diode Forward Voltage (IF = 12 A) VF - 1.6 2.2 V Output Diode Reverse Leakage Current IR - - 50 A Thermal Resistance - IGBT RJC - - 1.7 C/W Thermal Resistance - Output Diode RJC - - 2.7 C/W Rsense - 10 - m Rtol -1.0 - +1.0 % VF - 0.660 - V TCVF - -1.95 - mV/C SENSE RESISTOR Resistance Resistance Tolerance TEMPERATURE SENSE DIODE Forward Voltage (@ IF = 1.0 mA) Forward Voltage Temperature Coefficient (@ IF = 1.0 mA) Motorola IGBT Device Data 3 MHPM7A12A120A Typical Characteristics 24 IF, FORWARD CURRENT (AMPS) 20 16 12 TJ = 125C 8 25C 4 20 16 12 TJ = 125C 8 25C 4 0 0 0 0.2 0.4 0.6 0.8 1 1.2 VF, FORWARD VOLTAGE (VOLTS) 1.4 1.6 0 0.3 Figure 1. Forward Characteristics - Input Rectifier IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) TJ = 125C 12 V 15 V 20 16 12 8 4 9V 0 1 2 3 4 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 12 8 9V 4 0 TJ = 25C 24 A 16 14 12 10 8 12 A 6 4 IC = 6 A 2 8 10 12 14 16 18 VGE, GATE-EMITTER VOLTAGE (VOLTS) Figure 5. Collector-Emitter Voltage versus Gate-Emitter Voltage 20 0 1 2 3 4 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 5 Figure 4. Forward Characteristics, TJ = 125C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 18 15 V 16 5 20 12 V VGE = 18 V 20 Figure 3. Forward Characteristics, TJ = 25C 4 2.4 24 VGE = 18 V TJ = 25C 0 2.1 Figure 2. Forward Characteristics - Free-Wheeling Diode 24 0 0.6 0.9 1.2 1.5 1.8 VF, FORWARD VOLTAGE (VOLTS) 900 18 800 IC = 12 A TJ = 25C 500 V VCE = 600 V VCE = 400 V 16 14 700 600 600 V 500 V 12 10 500 400 V 400 8 300 6 200 4 100 2 0 0 10 20 30 40 50 60 VGE, GATE-EMITTER VOLTAGE (VOLTS) IF, FORWARD CURRENT (AMPS) 24 0 70 Qg, TOTAL GATE CHARGE (nC) Figure 6. Collector-Emitter and Gate-Emitter Voltages versus Total Gate Charge Motorola IGBT Device Data MHPM7A12A120A Typical Characteristics 1000 10000 VCE = 600 V VGE = 15 V RG(off) = 20 TJ = 125C 100 t, TIME (ns) t, TIME (ns) toff tf td(off) tf toff 1000 VCE = 600 V VGE = 15 V RG(off) = 20 TJ = 25C 10 0 5 10 15 20 30 25 td(off) 100 0 5 IC, COLLECTOR CURRENT (AMPS) Figure 7. Inductive Switching Times versus Collector Current, TJ = 25C 30 10000 VCE = 600 V VGE = 15 V IC = 12 A TJ = 25C VCE = 600 V VGE = 15 V IC = 12 A TJ = 125C t, TIME (ns) t, TIME (ns) 25 Figure 8. Inductive Switching Times versus Collector Current, TJ = 125C 10000 toff 1000 td(off) toff 1000 td(off) tf tf 100 10 100 RG(off), GATE RESISTANCE (OHMS) 100 1000 10 Figure 9. Inductive Switching Times versus Gate Resistance, TJ = 25C 100 RG(off), GATE RESISTANCE (OHMS) 1000 Figure 10. Inductive Switching Times versus Gate Resistance, TJ = 125C 10000 120 VCE = 600 V VGE = 15 V RG(on) = 220 110 100 90 VCE = 600 V VGE = 15 V IC = 12 A TJ = 125C 80 70 1000 25C t, TIME (ns) t, TIME (ns) 10 15 20 IC, COLLECTOR CURRENT (AMPS) 60 50 40 tr TJ = 125C 100 25C 30 20 10 0 tr 10 0 2 4 8 10 12 14 16 18 IC, COLLECTOR CURRENT (AMPS) 6 20 Figure 11. Inductive Switching Times versus Collector Current Motorola IGBT Device Data 22 24 10 100 RG(on), GATE RESISTANCE () 1000 Figure 12. Inductive Switching Times versus Gate Resistance 5 MHPM7A12A120A Typical Characteristics 10000 VCE = 600 V VGE = 15 V RG(off) = 20 TJ = 125C 1000 100 E off , TURN-OFF ENERGY LOSSES (J) E off , TURN-OFF ENERGY LOSSES (J) 10000 25C TJ = 125C 25C 1000 VCE = 600 V VGE = 15 V IC = 12 A 100 0 5 10 15 20 IC, COLLECTOR CURRENT (AMPS) 25 30 10 I rr , PEAK REVERSE RECOVERY CURRENT (AMPS) t rr , REVERSE RECOVERY TIME (ns) Figure 13. Turn-Off Energy Losses versus Collector Current 10000 TJ = 125C Cies C, CAPACITANCE (pF) trr 25C 100 TJ = 125C 10 Irr 25C 1000 Coes 100 Cres -di/dt = 100 A/s 1 0 5 10 15 20 IF, FORWARD CURRENT (AMPS) 25 10 30 0 40 30 20 +VGE = 15 V -VGE = 0 V RG(on) = 220 TJ = 25C 10 0 0 600 800 200 400 1000 1200 1400 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 17. Reversed Biased Safe Operating Area (RBSOA) 20 40 60 80 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 16. Capacitance Variation 1600 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 15. Reverse Recovery Characteristics - Free-Wheeling Diode IC, COLLECTOR CURRENT (AMPS) 1000 Figure 14. Turn-Off Energy Losses versus Gate Resistance 1000 6 100 RG(off), GATE RESISTANCE (OHMS) 1.0 IGBT DIODE 0.1 0.01 0.001 1.0 10 100 1000 t, TIME (ms) Figure 18. Thermal Response Motorola IGBT Device Data MHPM7A12A120A ton toff td(on) L IC VCE tr td(off) tf 90% 90% OUTPUT, Vout INVERTED 10% RG 90% VCE INPUT, Vin 50% 50% 10% PULSE WIDTH Figure 19. Inductive Switching Time Test Circuit and Timing Chart Motorola IGBT Device Data 7 8 R S T 24 23 22 D9 D8 D11 D10 15 6 25 Q7 D7 5 -I 21 B = PIN NUMBER IDENTIFICATION N2 G7 7 1 N1 D13 D12 P2 P1 8 G2 16 G1 E1 9 4 +I Q2 Q1 D2 D1 10 +T C -T C 3 2 G4 17 G3 E3 11 Q8 TEMP SENSE Q4 Q3 D4 D3 G6 14 12 G5 E5 13 D6 D5 W V U 18 19 20 3-Phase Input Rectifier Bridge Brake IGBT/ Diode 3-Phase Output IGBT/Diode Bridge, with Current and Temperature Sense DEVICE INTEGRATION Q6 Q5 MHPM7A12A120A Figure 20. Integrated Power Stage Schematic Motorola IGBT Device Data MHPM7A12A120A PACKAGE DIMENSIONS E C AB AC AE K AA 9 PL AF 3 PL AD A Q 2 PL AH N G 1 2 PL V 17 L S M R B DETAIL Z 25 Y 18 T X AG P 4 PL 4 PL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. LEAD LOCATION DIMENSIONS (ie: M, G. AA...) ARE TO THE CENTER OF THE LEAD. U J H 25 PL 7 PL D F DETAIL Z DIM A B C D E F G H J K L M N P Q R S T U V X Y AA AB AC AD AE AF AG AH MILLIMETERS MIN MAX 97.54 98.55 52.45 53.47 14.60 15.88 0.43 0.84 10.80 12.06 0.94 1.35 1.60 2.21 8.58 9.19 0.30 0.71 18.80 20.57 19.30 20.32 38.99 40.26 9.78 11.05 82.55 83.57 4.01 4.62 26.42 27.43 12.06 12.95 4.32 5.33 86.36 87.38 14.22 15.24 6.55 7.16 2.49 3.10 2.24 2.84 7.32 7.92 4.78 5.38 8.58 9.19 6.05 6.65 4.78 5.38 69.34 70.36 --- 5.08 INCHES MIN MAX 3.840 3.880 2.065 2.105 0.575 0.625 0.017 0.033 0.425 0.475 0.037 0.053 0.063 0.087 0.338 0.362 0.012 0.028 0.74 0.81 0.760 0.800 1.535 1.585 0.385 0.435 3.250 3.290 0.158 0.182 1.040 1.080 0.475 0.515 0.170 0.210 3.400 3.440 0.560 0.600 0.258 0.282 0.098 0.122 0.088 0.112 0.288 0.312 0.188 0.212 0.338 0.362 0.238 0.262 0.188 0.212 2.730 2.770 --- 0.200 CASE 440-02 ISSUE A Motorola IGBT Device Data 9 MHPM7A12A120A Motorola reserves the right to make changes without further notice to any products herein. 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