AOD9N40
400V,8A N-Channel MOSFET
General Description Product Summary
500V@150℃
ID (at VGS=10V) 8A
RDS(ON) (at VGS=10V) <0.8Ω
100% UIS Tested!
100% Rg Tested!
Symbol
VDS
VGS
IDM
IAR
EAR
EAS
Peak diode recovery dv/dt dv/dt
TJ, TSTG
TL
Symbol
R
θ
JA
RθCS
RθJC
Maximum Junction-to-Ambient A,G
TC=25°C
-
55
Maximum
Thermal Characteristics Units
°C/W45
Parameter Typical
W
W/ oC
Maximum lead temperature for soldering
p
ur
p
ose, 1/8" from case for 5 seconds 300 °C
Junction and Storage Temperature Range -50 to 150 °C
Power Dissipation B
V±30Gate-Source Voltage
TC=100°C A
ID
TC=25°C 8
5
22
The AOD9N40 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this device can be
adopted quickly into new and existing offline power supply
designs.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
VDS
V
UnitsParameter
Absolute Maximum Ratings TA=25°C unless otherwise noted Maximum
Drain-Source Voltage 400
Pulsed Drain Current C
Continuous Drain
CurrentB
mJ
Avalanche Current C
150
Repetitive avalanche energy C
1
A3.2
Single pulsed avalanche energy H 300 mJ
V/ns5
PD
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F °C/W
°C/W
0.7
0.5
1
Derate above 25oC
125
G
D
S
Top View
TO252
DPAK
Bottom View
G
S
D
G
S
D
Top View
TO252
DPAK
Bottom View
Rev0: Dec 2010 www.aosmd.com Page 1 of 6
AOD9N40
Symbol Min Typ Max Units
400
500
BVDSS
/∆TJ 0.4 V/ oC
1
10
IGSS Gate-Body leakage current ±100 nΑ
VGS(th) Gate Threshold Voltage 3.4 4 4.5 V
RDS(ON) 0.64 0.8 Ω
gFS 8S
VSD 0.75 1 V
ISMaximum Body-Diode Continuous Current 8 A
ISM 22 A
Ciss 500 630 760 pF
Coss 45 73 100 pF
Crss 2 5.7 9 pF
Rg1.2 2.6 4.0 Ω
Qg10 13.1 16 nC
Qgs 3.9 nC
Qgd 4.8 nC
tD(on) 17 ns
tr52 ns
tD(off) 25 ns
tf30 ns
trr 150 195 240 ns
Qrr 1.5 1.9 2.3 µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge IF=8A,dI/dt=100A/µs,VDS=100V
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
Turn-Off DelayTime
VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
VGS=10V, VDS=320V, ID=8A
Gate Source Charge
Gate Drain Charge
IS=1A,VGS=0V
VDS=40V, ID=4A
VDS=0V, VGS=±30V
VGS=10V, ID=4A
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
VDS=5V ID=250µA
VDS=320V, TJ=125°C
Zero Gate Voltage Drain Current ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current VDS=400V, VGS=0V
IF=8A,dI/dt=100A/µs,VDS=100V
VGS=0V, VDS=25V, f=1MHz
SWITCHING PARAMETERS
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
BVDSS
µA
V
Drain-Source Breakdown Voltage
Body Diode Reverse Recovery Time
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
Turn-On Rise Time
Forward Transconductance
VGS=10V, VDS=200V, ID=8A,
RG=25Ω
Gate resistance
Diode Forward Voltage
Reverse Transfer Capacitance
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting
the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=3.2A, VDD=150V, RG=10Ω, Starting TJ=25°C
Rev0: Dec 2010 www.aosmd.com Page 2 of 6
AOD9N40
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
40
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
IS (A)
25°C
125°C
ID=30A
25°C
125°C
0
4
8
12
16
0 5 10 15 20 25 30
VDS (Volts)
Fig 1: On-Region Characteristics
ID (A)
VGS=5.5V
6V
10V
6.5V
0.1
1
10
100
246810
VGS(Volts)
Figure 2: Transfer Characteristics
ID(A)
-55°C
VDS=40V
25°C
125°C
0.0
0.4
0.8
1.2
1.6
2.0
0 3 6 9 12 15 18
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
RDS(ON) (Ω)
VGS=10V
0
0.5
1
1.5
2
2.5
3
-100 -50 0 50 100 150 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Normalized On-Resistance
VGS=10V
ID=4A
0.8
0.9
1
1.1
1.2
-100 -50 0 50 100 150 200
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
BVDSS (Normalized)
Rev0: Dec 2010 www.aosmd.com Page 3 of 6
AOD9N40
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0
3
6
9
12
15
048121620
Qg (nC)
Figure 7: Gate-Charge Characteristics
VGS (Volts)
VDS=320V
ID=8A
1
10
100
1000
10000
0.1 1 10 100
VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
Coss
C
rss
0.01
0.1
1
10
100
1 10 100 1000
VDS (Volts)
ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10ms
1ms
DC
RDS(ON)
limi
ted
TJ(Max)=150°C
TC=25°C
100
µ
s
0
200
400
600
800
0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Power (W)
TJ(Max)=150°C
TC=25°C
0.001
0.01
0.1
1
10
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
ZθJC Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Sin
g
le Puls
e
Ton
T
PD
Rev0: Dec 2010 www.aosmd.com Page 4 of 6
AOD9N40
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0
30
60
90
120
150
0 25 50 75 100 125 150
TCASE (°C)
Figure 12: Power De-rating (Note B)
Power Dissipation (W)
0
2
4
6
8
10
0 25 50 75 100 125 150
TCASE (°C)
Figure 13: Current De-rating (Note B)
Current rat ing ID(A)
0
100
200
300
400
0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
Power (W)
TA=25°C
0.0001
0.001
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100 1000 10000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
ZθJA Normalized T ransient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Ton
T
PD
Rev0: Dec 2010 www.aosmd.com Page 5 of 6
AOD9N40
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Char ge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
tt
r
d(on)
t
on
t
d(of f )
t
f
t
off
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
DSS
2
E = 1/2 LI
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
AR
AR
Rev0: Dec 2010 www.aosmd.com Page 6 of 6
