MITSUBISHI TRANSISTOR MODULES QM30TB-24B MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TB-24B * * * * * IC Collector current .......................... 30A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 127 21 7.5 19 7.5 28.5 BuP EuP 21 7.5 16.5 28.5 BvP EvP 2-5.5 21.5 BwP EwP V W BuN EuN BvN EvN BwN EwN 40 56 U 18 25 P N P BuP BvP BwP EuP U EvP V EwP W BuN EuN N BvN EvN BwN EwN 98 1100.2 Tab#250, t=0.8 25.6 7.5 LABEL 17.5 26.5 Tab#110, t=0.5 Note: All Transistor Units are 4-Stage Darlingtons. Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM30TB-24B MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (Tj=25C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 1200 V VCEX Collector-emitter voltage VEB=2V 1200 V VCBO Collector-base voltage Emitter open 1200 V VEBO Emitter-base voltage Collector open 7 V IC Collector current DC 30 A -IC Collector reverse current DC (forward diode current) 30 A PC Collector dissipation TC=25C 310 W IB Base current DC 2 A -ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 300 A Tj Junction temperature -40~+150 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Symbol Parameter Conditions Charged part to case, AC for 1 minute -- Mounting torque Mounting screw M5 -- Weight Typical value ELECTRICAL CHARACTERISTICS 2500 V 1.47~1.96 N*m 15~20 kg*cm 500 g (Tj=25C, unless otherwise noted) Limits Symbol Parameter Test conditions Min. Typ. Max. Unit ICEX Collector cutoff current VCE=1200V, VEB=2V -- -- 2.0 mA ICBO Collector cutoff current VCB=1200V, Emitter open -- -- 2.0 mA IEBO Emitter cutoff current VEB=7V -- -- 50 mA VCE (sat) Collector-emitter saturation voltage -- -- 4.0 V VBE (sat) Base-emitter saturation voltage -- -- 4.0 V -VCEO Collector-emitter reverse voltage -IC=30A (diode forward voltage) -- -- 1.8 V hFE DC current gain IC=30A, VCE=4V 750 -- -- -- -- -- 2.5 s Switching time VCC=600V, IC=30A, IB1=60mA, -IB2=0.6A -- -- 15 s -- -- 3.0 s Transistor part (per 1/6 module) -- -- 0.4 C/ W Diode part (per 1/6 module) -- -- 1.5 C/ W Conductive grease applied (per 1/6 module) -- -- 0.25 C/ W IC=30A, IB=40mA ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM30TB-24B MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 50 IB=200mA 40 DC CURRENT GAIN hFE IB=100mA IB=40mA 30 IB=20mA 20 IB=10mA 10 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 10 -1 7 5 4 3 2 3.0 3.4 3.8 4.6 4.2 BASE-EMITTER VOLTAGE 10 3 7 5 4 3 2 101 7 5 4 3 2 10 0 VCE(sat) 7 5 4 3 IB=60mA 2 Tj=25C 10-1 10 0 IC=30A IC=10A 1 Tj=25C Tj=125C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (s) 3 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 4 2 3 4 5 7 10 1 VBE(sat) VBE (V) IC=40A 2 VCE=4V SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 5 VCE=10V COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) VCE=4.0V Tj=25C 10 -2 2.6 Tj=25C Tj=125C VCE (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 10 4 7 5 4 3 2 10 2 10 0 5 SATURATION VOLTAGE COLLECTOR CURRENT IC (A) Tj=25C 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 BASE CURRENT IB (A) 3 2 ts 10 1 7 5 4 3 2 VCC=600V IB1=60mA -IB2=0.6A 10 0 7 5 4 3 10 1 tf ton Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM30TB-24B MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA ts, tf (s) SWITCHING TIME 10 1 7 5 4 3 2 10 0 7 5 4 3 ts tf VCC=600V IC=30A IB1=60mA Tj=25C Tj=125C 3 4 5 7 10 0 2 3 4 5 7 10 1 COLLECTOR CURRENT IC (A) 80 3 2 Tj=125C 70 IB2=2.5A 60 50 40 30 20 10 0 2 3 BASE REVERSE CURRENT -IB2 (A) FORWARD BIAS SAFE OPERATING AREA 1mS 500S 10 1 7 5 3 2 10 0 7 5 TC=25C 3 NON-REPETITIVE 2 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 2 DERATING FACTOR (%) DC 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 7 10 1 2 3 4 5 7 10 2 0.5 0.4 0.3 0.2 0.1 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 VCE (V) SECOND BREAKDOWN AREA 90 100S 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT -IC (A) COLLECTOR CURRENT IC (A) 100 200S COLLECTOR-EMITTER VOLTAGE Zth (j-c) (C/ W) 200 400 600 800 1000 1200 1400 DERATING FACTOR OF F. B. S. O. A. 2 10 2 7 5 3 2 0 COLLECTOR-EMITTER VOLTAGE TIME (s) 10 2 7 5 4 3 2 TC (C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 10 1 7 5 4 3 2 10 0 0.4 Tj=25C Tj=125C 0.8 1.2 1.6 2.0 2.4 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM30TB-24B MEDIUM POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 1 7 5 3 2 10 0 7 5 3 2 10 -1 10 2 VCC=600V IB1=60mA -IB2=0.6A Irr 10 1 trr (s) 10 2 7 5 3 2 500 Irr (A), Qrr (c) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) Qrr trr 10 0 Tj=25C Tj=125C 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 2.0 Zth (j-c) (C/ W) 1.6 1.2 0.8 0.4 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999 http://store.iiic.cc/