CDD70
Diode-Diode Modules
Type
CDD70N08
CDD70N12
CDD70N14
CDD70N16
CDD70N18
VRRM
V
800
1200
1400
1600
1800
VRSM
V
900
1300
1500
1700
1900
Dimensions in mm (1mm=0.0394")
Symbol Test Conditions Maximum Ratings Unit
IFRMS
IFAVM TVJ=TVJM
TC=100oC; 180o sine 150
70 A
TVJ=45oC t=10ms (50Hz), sine
VR=0 t=8.3ms (60Hz), sine
TVJ=TVJM t=10ms(50Hz), sine
VR=0 t=8.3ms(60Hz), sine
1400
1650
1200
1400
A
IFSM
TVJ=45oC t=10ms (50Hz), sine
VR=0 t=8.3ms (60Hz), sine
TVJ=TVJM t=10ms(50Hz), sine
VR=0 t=8.3ms(60Hz), sine
9800
11300
7200
8100
A2s
TVJ
TVJM
Tstg
-40...+150
150
-40...+125
oC
VISOL 50/60Hz, RMS t=1min
IISOL<1mA t=1s 3000
3600 V~
MdMounting torque (M5)
Terminal connection torque (M5)
_
2.5-4/22-35
2.5-4/22-35 Nm/lb.in.
Weight 90 g
312
i2dt
Typical including screws
13
2
DEECorp.
http://store.iiic.cc/
CDD70
Diode-Diode Modules
ADVANTAGES
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits
APPLICATIONS
* Supplies for DC power equipment
* DC supply for PWM inverter
* Field supply for DC motors
* Battery DC power supplies
Symbol Test Conditions Characteristic Values Unit
V
VFIF=200A; TVJ=25oC 1.48
VTO For power-loss calculations only 0.8 V
rT3 m
IRTVJ=TVJM; VR=VRRM 10 mA
TVJ=TVJM
per diode; DC current
per module
RthJC 0.51
0.255 K/W
per diode; DC current
per module
RthJK 0.71
0.355 K/W
dSCreepage distance on surface 12.7 mm
dAStrike distance through air 9.6 mm
aMaximum allowable acceleration 50 m/s2
uC
QSTVJ=125oC; IF=50A; -di/dt=3A/us 100
IRM 24 A
FEATURES
* International standard package
* Direct copper bonded Al2O3-ceramic
base plate
* Planar passivated chips
* Isolation voltage 3600 V~
* UL registered, E 72873
DEECorp.
http://store.iiic.cc/
CDD70
Diode-Diode Modules
Fig. 1 Surge overload current
IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus
forward current and ambient
temperature (per diode)
Fig. 4 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
DEECorp.
http://store.iiic.cc/
CDD70
Diode-Diode Modules
Fig. 5 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Fig. 6 Transient thermal impedance
junction to case (per diode)
Fig. 7 Transient thermal impedance
junction to heatsink (per diode)
RthJK for various conduction angles d:
d RthJK (K/W)
DC 0.71
180oC0.73
120oC0.75
60oC0.78
30oC0.82
Constants for ZthJK calculation:
iR
thi (K/W) ti (s)
1 0.013 0.0015
2 0.055 0.045
3 0.442 0.485
4 0.2 1.25
RthJC for various conduction angles d:
d RthJC (K/W)
DC 0.51
180oC0.53
120oC0.55
60oC0.58
30oC0.62
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.013 0.0015
2 0.055 0.045
3 0.442 0.485
DEECorp.
http://store.iiic.cc/