High Power Bipolar Transistors
Tip Series
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Dimensions : Millimetres
Features:
•Collector-Emitter sustaining voltage-
VCEO (sus) = 60 V (Minimum) - TIP29A, TIP30A
= 100 V (Minimum) - TIP29C, TIP30C
•Collector-Emitter saturation voltage-
VCE (sat) = 0.7 V (Maximum) at IC= 1 A
• Current gain-bandwidth product fT= 3 MHz (Minimum) at IC= 200 mA
1 A
Complementary Silicon
Power Transistors
40 - 100 V
30 W
TO-220
Pin 1. Base
2. Collector
3. Emitter
4. Collector (Case)
Dimensions Minimum Maximum
A 14.68 15.31
B 9.78 10.42
C 5.01 6.52
D 13.06 14.62
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.2 2.97
L 0.33 0.55
M 2.48 2.98
O 3.7 3.9
Maximum Ratings
Characteristic Symbol TIP29A
TIP30A
TIP29C
TIP30C Unit
Collector-Emitter Voltage VCEO 60 100
VCollector-Base Voltage VCBO
Emitter-Base Voltage VEBO 5
Collector Current-Continuous
- Peak IC1
3A
Base Current IB0.4
Total Power Dissipation at TC= 25°C
Derate above 25°C PD30
0.24
W
W / °C
Operating and Storage Junction Temperature Range TJ, TSTG -65 to +150 °C
NPN PNP
TIP29A TIP30A
TIP29C TIP30C
High Power Bipolar Transistors
Tip Series
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Thermal Characteristics
Characteristic Symbol Maximum Unit
Thermal Resistance Junction to Case Rθjc 4.167 °C / W
Figure - 1 Power Derating
TC, Temperature (°C)
PD, Power Dissipation (W)
Electrical Characteristics (TC= 25°C unless otherwise noted)
Characteristic Symbol Minimum Maximum Unit
OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
(IC= 30 mA, IB= 0) TIP29A, TIP30A
TIP29C, TIP30C
VCEO (sus) 60
100 - V
Collector Cut off Current
(VCE = 30 V, IB= 0) TIP29A, TIP30A
(VCE = 60 V, IB= 0) TIP29C, TIP30C
ICEO - 0.3
mA
Collector Cut off Current
(VCE = 60 V, VEB = 0) TIP29A, TIP30A
(VCE = 100 V, VEB = 0) TIP29C, TIP30C
ICES - 0.2
Emitter Cut off Current
(VEB = 5 V, IC= 0) IEBO - 1
ON Characteristics (1)
DC Current Gain
(IC= 0.2 A, VCE = 4 V)
(IC= 1 A, VCE = 4 V)
hFE 40
15
-
75 -
Collector-Emitter Saturation Voltage
(IC= 1 A, IB= 125 mA) VCE (sat) - 0.7
V
Base-Emitter On Voltage
(IC= 1 A, VCE = 4 V) VBE (on) - 1.3
High Power Bipolar Transistors
Tip Series
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Characteristic Symbol Minimum Maximum Unit
Dynamic Characteristics
Current Gain-Bandwidth Product (2)
(IC= 200 mA, VCE = 10 V, f = 1 MHz) fT3 - MHz
Small Signal Current Gain
(IC= 200 mA, VCE = 10 V, f = 1 kHz) hfe 20 - -
(1) Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤2%
(2) fT= | hFE | •fTest
Figure - 2 Turn-On Time
IC, Collector Current (A)
t, Time (µs)
Figure - 3 Switching Time Equivalent Circuit
RBand RCVaried to Obtain Desired Current Levels
Figure - 4 DC Current Gain
IC, Collector Current (A)
hFE, DC Current Gain
Figure - 5 Turn-Off Time
IC, Collector Current (A)
t, Time (µµs)
High Power Bipolar Transistors
Tip Series
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Figure - 6 Active Region Safe Operating Area
V CE, Collector Emitter Voltage (V)
IC, Collector Current (A)
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown
safe operating area curves indicate IC - VCE limits of the
transistor that must be observed for reliable operation i.e., the
transistor must not be subjected to greater dissipation than the
curves indicate
The data of figure - 6 curve is based on TJ (PK) = 150°C; TCis
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ (PK) =150°C.
At high case temperatures, thermal limitation will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown
Specification Table
Type Part Number
NPN
TIP29A
TIP29C
PNP
TIP30A
TIP30C
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