G9805 series is a family of high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These
devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode integrated with a high-speed preamp, allowing easy
connection to a latter-stage circuit. Lens window types are also available for efficient and easy coupling to an optical fiber.
Features
l
High-speed response
l
High gain with AGC (Auto Gain Control)
l
Low power supply voltage: 3.3 V
l
Differential output
l
Sensitivity: -38 to +1 dBm
Applications
l
Optical fiber communications
l
SDH/SONET (STM-1/OC-3)
PHOTODIODE
InGaAs PIN photodiode with preamp
TO-46 package, 1.3/1.55
m
m, 156 Mbps
G9805 series
■
Absolute maximum ratings
Parameter Symbol Value Unit
Supply voltage Vcc 0, +4.5 V
Operation temperature *1Topr -40 to +85 °C
Storage temperature *1Tstg -40 to +85 °C
*1: No condensation
■ Electrical and optical characteristics
(Ta=25 °C, Vcc=3.3 V, Vee=0 V, RL=500 Ω *2, λ=1.31 µm, unless otherwise noted)
Parameter Symbol Condition Min. Typ. Max. Unit
Photo sensitivity S Pin= -30 dBm *2, *319 27 - V/mW
Supply current Icc Dark state, RL=∞-22 35 mA
Output bias voltage Vo Dark state, RL=∞-1.5-V
Cut-off frequency fc Pin= -30 dBm, -3 dB *285 120 -MHz
Low cut-off frequency fc-L Pin= -30 dBm, -3 dB - 15 - kHz
Noise equivalent power NEP Dark state, to 117 MHz, *2, *3-20 30 nWrms
Minimum receivable
sensitivity Pmin - -38 -36
Maximum receivable
sensitivity Pmax
156 Mbps, PRBS=223-1
BER=10-10
Extinction ratio=10 dB +1 - -
dBm
Output impedance Rout 25 40 100 Ω
*2: Output: capacitive coupling
G9805 series should be used with a load resistance larger than 500 Ω.
*3: Single-ended (Vout+) measurement
1
InGaAs PIN photodiode with preamp G9805 series
Vout +
Vcc
Vout -
Vee (CASE)
(13)
1.6
2.7
(4 ×) 0.45 ± 0.1
LEAD
4.7
5.4
PHOTOSENSITIVE
SURFACE
WINDOW
3.0
2.54 ± 0.25
(1.0)
(45˚)
(1.0)
■ Dimensional outlines (unit: mm)
KIRDA0104EB
G9805
KGPDA0027EA
G9805-02
(13) 0.65 ± 0.15
3.8
(4 ×) 0.45 ± 0.1
LEAD
4.65 ± 0.1
5.4
LENS ( 1.5)
Vout +
Vcc
Vout -
Vee (CASE)
2.54 ± 0.25
(1.0)
(45˚)
(1.0)
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable . Howe ver, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2005 Hamamatsu Photonics K.K.
Cat. No. KIRD1077E01
Feb. 2005 DN
2
