March 2008 Rev 5 1/64
1
M25PE20
M25PE10
1 and 2 Mbit, page-erasable serial Flash memories
with byte alterability, 75 MHz SPI bus, standard pinout
Features
■1 or 2 Mbit of page-erasable Flash memory
■2.7 V to 3.6 V single supply voltage
■SPI bus compatible serial interface
■75 MHz clock rate (maximum)
■Page size: 256 bytes
– Page Write in 11 ms (typical)
– Page Program in 0.8 ms (typical)
– Page Erase in 10 ms (typical)
■SubSector Erase (32 Kbits)
■Sector Erase (512 Kbits)
■Bulk Erase (1 Mbit for M25PE10, 2 Mbits for
M25PE20)
■Deep Power-down mode 1 µA (typical)
■Electronic signature
– JEDEC standard two-byte signature
(8012h for M25PE20, 8011h for M25PE10)
– Unique ID code (UID) with 16 bytes read-
only, available upon customer request only
in the T9HX process
■Software write protection on a 64-Kbyte sector
basis
■More than 100 000 Write cycles
■More than 20 years data retention
■Hardware write protection of the memory area
selected using the BP0 and BP1 bits
■Package
– ECOPACK® (RoHS compliant)
SO8N (MN)
150 mil width
VFQFPN8 (MP)
6 × 5 mm
www.numonyx.com
Contents M25PE20, M25PE10
2/64
Contents
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2 Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.1 Serial Data output (Q) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.2 Serial Data input (D) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.3 Serial Clock (C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.4 Chip Select (S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.5 Reset (Reset) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.6 Top Sector Lock (TSL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.7 Write Protect (W) or Top Sector Lock (TSL) . . . . . . . . . . . . . . . . . . . . . . . . 9
2.8 VCC supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.9 VSS ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3 SPI modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Operating features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.1 Sharing the overhead of modifying data . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.2 An easy way to modify data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.3 A fast way to modify data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.4 Polling during a Write, Program or Erase cycle . . . . . . . . . . . . . . . . . . . . 13
4.5 Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.6 Active Power, Standby Power and Deep Power-down modes . . . . . . . . . 13
4.7 Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.8 Protection modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.8.1 Protocol-related protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.8.2 Specific hardware and software protections . . . . . . . . . . . . . . . . . . . . . 15
5 Memory organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6 Instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6.1 Write Enable (WREN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
6.2 Write Disable (WRDI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
M25PE20, M25PE10 Contents
3/64
6.3 Read Identification (RDID) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
6.4 Read Status Register (RDSR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
6.4.1 WIP bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
6.4.2 WEL bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
6.4.3 BP1, BP0 bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
6.4.4 SRWD bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
6.5 Write Status Register (WRSR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
6.6 Read Data Bytes (READ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
6.7 Read Data Bytes at Higher Speed (FAST_READ) . . . . . . . . . . . . . . . . . . 32
6.8 Read Lock Register (RDLR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
6.9 Page Write (PW) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
6.10 Page Program (PP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
6.11 Write to Lock Register (WRLR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
6.12 Page Erase (PE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
6.13 SubSector Erase (SSE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
6.14 Sector Erase (SE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
6.15 Bulk Erase (BE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
6.16 Deep Power-down (DP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
6.17 Release from Deep Power-down (RDP) . . . . . . . . . . . . . . . . . . . . . . . . . . 44
7 Power-up and power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
8 Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
9 Initial delivery state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
10 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
11 DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
12 Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
13 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
List of tables M25PE20, M25PE10
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List of tables
Table 1. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 2. Software protection truth table (sectors 0 to 3 for M25PE20 or sectors 0
to 1 for M25PE10, 64-Kbyte granularity) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 3. Protected area sizes for M25PE20 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 4. Protected area sizes for M25PE10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 5. M25PE20 memory organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 6. M25PE10 memory organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table 7. Instruction set . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 8. Read Identification (RDID) data-out sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Table 9. Status Register format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Table 10. Protection modes (T9HX process only, see Important note on page 6) . . . . . . . . . . . . . . . 30
Table 11. Lock Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 12. Lock Register In . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Table 13. Power-up timing and VWI threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Table 14. Device status after a Reset Low pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Table 15. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Table 16. Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Table 17. AC measurement conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Table 18. Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Table 19. DC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Table 20. DC characteristics (T9HX (0.11 µm) process) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Table 21. AC characteristics (25 MHz operation) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Table 22. AC characteristics (33 MHz operation) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Table 23. AC characteristics (50 MHz operation, T9HX (0.11 µm) process) . . . . . . . . . . . . . . . . . . . 53
Table 24. AC characteristics (75 MHz operation, T9HX (0.11 µm) process) . . . . . . . . . . . . . . . . . . . 54
Table 25. Reset conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Table 26. Timings after a Reset Low pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Table 27. SO8N – 8 lead plastic small outline, 150 mils body width, package
mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
Table 28. VFQFPN8 (MLP8), 8-lead very thin fine pitch quad flat package no lead,
6 × 5 mm, package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Table 29. Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Table 30. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
M25PE20, M25PE10 List of figures
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List of figures
Figure 1. Logic diagram - previous T7X process . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 2. Logic diagram - new T9HX process . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 3. VFQFPN and SO connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 4. Bus master and memory devices on the SPI bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5. SPI modes supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 6. M25PE20 block diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 7. M25PE10 block diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 8. Write Enable (WREN) instruction sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 9. Write Disable (WRDI) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 10. Read Identification (RDID) instruction sequence and data-out sequence . . . . . . . . . . . . . 26
Figure 11. Read Status Register (RDSR) instruction sequence and data-out sequence . . . . . . . . . . 28
Figure 12. Write Status Register (WRSR) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 13. Read Data Bytes (READ) instruction sequence and data-out sequence . . . . . . . . . . . . . . 31
Figure 14. Read Data Bytes at Higher Speed (FAST_READ) instruction sequence
and data-out sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Figure 15. Read Lock Register (RDLR) instruction sequence and data-out sequence . . . . . . . . . . . . 33
Figure 16. Page Write (PW) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Figure 17. Page Program (PP) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 18. Write to Lock Register (WRLR) instruction sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 19. Page Erase (PE) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 20. SubSector Erase (SSE) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure 21. Sector Erase (SE) instruction sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Figure 22. Bulk Erase (BE) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Figure 23. Deep Power-down (DP) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure 24. Release from Deep Power-down (RDP) instruction sequence . . . . . . . . . . . . . . . . . . . . . . 44
Figure 25. Power-up timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Figure 26. AC measurement I/O waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Figure 27. Serial input timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Figure 28. Top Sector Lock (T7X process) or Write Protect (T9HX process) setup and hold
timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Figure 29. Output timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Figure 30. Reset AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Figure 31. SO8N – 8 lead Plastic small outline, 150 mils body width, package outline. . . . . . . . . . . . 58
Figure 32. VFQFPN8 (MLP8), 8-lead very thin fine pitch quad flat package no lead,
6 × 5 mm, package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Description M25PE20, M25PE10
6/64
1 Description
The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial
paged Flash memories, respectively. They are accessed by a high speed SPI-compatible
bus.
The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write
or Page Program instruction. The Page Write instruction consists of an integrated Page
Erase cycle followed by a Page Program cycle.
The M25PE20 memory is organized as 4 sectors, each containing 256 pages. Each page is
256 bytes wide. Thus, the whole memory can be viewed as consisting of 1024 pages, or
262,144 bytes.
The M25PE10 memory is organized as 2 sectors, each containing 256 pages. Each page is
256 bytes wide. Thus, the whole memory can be viewed as consisting of 512 pages, or
131, 072 bytes.
The memories can be erased a page at a time, using the Page Erase instruction, a
subsector at a time, using the SubSector Erase instruction, a sector at a time, using the
Sector Erase instruction or as a whole, using the Bulk Erase instruction.
The memory can be write protected by either hardware or software using a mix of volatile
and non-volatile protection features, depending on the application needs. The protection
granularity is of 64 Kbytes (sector granularity).
Important note
This datasheet details the functionality of the M25PE20 and M25PE10 devices, based on
the previous T7X process or based on the current T9HX process (available since July 2007).
Delivery of parts operating with a maximum clock rate of 75 MHz starts from week 8 of
2008.
What are the changes?
The M25PE10/M25PE20 in T9HX process offers the following additional features:
●the whole memory array is partitioned into 4-Kbyte subsectors
●five new instructions: Write Status Register (WRSR), Write to Lock Register (WRLR),
Read Lock Register (RDLR), 4-Kbyte SubSector Erase (SSE) and Bulk Erase (BE)
●Status Register: 3 bits can be written (BP0, BP1, SRWD)
●WP input (pin 3): write protection limits are extended, depending on the value of the
BP0, BP1, SRWD bits. The WP write protection remains the same if bits (BP1, BP0)
are set to (0, 1) or (1, 0)
●VFQFPN8 6 × 5 mm package added.
M25PE20, M25PE10 Description
7/64
Figure 3. VFQFPN and SO connections
1. There is an exposed central pad on the underside of the VFQFPN package. This is pulled, internally, to
VSS, and must not be allowed to be connected to any other voltage or signal line on the PCB.
2. See Package mechanical section for package dimensions, and how to identify pin-1.
Figure 1. Logic diagram - previous T7X
process
Figure 2. Logic diagram - new T9HX
process
Table 1. Signal names
Signal name Function Direction
C Serial Clock Input
D Serial Data input Input
Q Serial Data output Output
SChip Select Input
TSL or W(1)
1. In the previous T7X process the pin is a Top Sector Lock input whereas in the new T9HX process, the pin
is a Write Protect input (see Figure 1 and Figure 2).
Top Sector Lock or Write Protect Input
Reset Reset Input
VCC Supply voltage –
VSS Ground –
Reset
AI09713
S
VCC
M25PE20
M25PE10
VSS
TSL
Q
C
D
Reset
AI13808
S
VCC
M25PE10
M25PE20
VSS
W
Q
C
D
1
AI09715b
2
3
4
8
7
6
5DVSS
C
ResetQ
SV
CC
TSL or W
M25PE20
M25PE10
Signal descriptions M25PE20, M25PE10
8/64
2 Signal descriptions
2.1 Serial Data output (Q)
This output signal is used to transfer data serially out of the device. Data is shifted out on the
falling edge of Serial Clock (C).
2.2 Serial Data input (D)
This input signal is used to transfer data serially into the device. It receives instructions,
addresses, and the data to be programmed. Values are latched on the rising edge of Serial
Clock (C).
2.3 Serial Clock (C)
This input signal provides the timing of the serial interface. Instructions, addresses, or data
present at Serial Data input (D) are latched on the rising edge of Serial Clock (C). Data on
Serial Data output (Q) changes after the falling edge of Serial Clock (C).
2.4 Chip Select (S)
When this input signal is High, the device is deselected and Serial Data output (Q) is at high
impedance. Unless an internal Read, Program, Erase or Write cycle is in progress, the
device will be in the Standby Power mode (this is not the Deep Power-down mode). Driving
Chip Select (S) Low selects the device, placing it in the Active Power mode.
After power-up, a falling edge on Chip Select (S) is required prior to the start of any
instruction.
2.5 Reset (Reset)
The Reset (Reset) input provides a hardware reset for the memory.
When Reset (Reset) is driven High, the memory is in the normal operating mode. When
Reset (Reset) is driven Low, the memory will enter the Reset mode. In this mode, the output
is high impedance.
Driving Reset (Reset) Low while an internal operation is in progress will affect this operation
(write, program or erase cycle) and data may be lost.
2.6 Top Sector Lock (TSL)
This input signal puts the device in the Hardware Protected mode, when Top Sector Lock
(TSL) is connected to VSS, causing the top 256 pages (upper addresses) of the memory to
become read-only (protected from write, program and erase operations).
When Top Sector Lock (TSL) is connected to VCC, the top 256 pages of memory behave like
the other pages of memory.
M25PE20, M25PE10 Signal descriptions
9/64
2.7 Write Protect (W) or Top Sector Lock (TSL)
●The Write Protect function is available in the T9HX process only (see Important
note on page 6)
The Write Protect (W) input is used to freeze the size of the area of memory that is
protected against write, program and erase instructions (as specified by the values in
the BP1 and BP0 bits of the Status Register. See Section 6.4: Read Status Register
(RDSR) for a description of these bits.
●The Top Sector Lock function is available in the T7X process only (see Important
note on page 6)
The input signal sets the device in the Hardware Protected mode, when Top Sector
Lock (TSL) is connected to VSS, causing the top 256 pages (upper addresses) of the
memory to become read-only (protected from write, program and erase operations).
When Top Sector Lock (TSL) is connected to VCC, the top 256 pages of memory
behave like the other pages of memory.
2.8 VCC supply voltage
VCC is the supply voltage.
2.9 VSS ground
VSS is the reference for the VCC supply voltage.
SPI modes M25PE20, M25PE10
10/64
3 SPI modes
These devices can be driven by a microcontroller with its SPI peripheral running in either of
the two following modes:
●CPOL=0, CPHA=0
●CPOL=1, CPHA=1
For these two modes, input data is latched in on the rising edge of Serial Clock (C), and
output data is available from the falling edge of Serial Clock (C).
The difference between the two modes, as shown in Figure 5, is the clock polarity when the
bus master is in Standby mode and not transferring data:
●C remains at 0 for (CPOL=0, CPHA=0)
●C remains at 1 for (CPOL=1, CPHA=1)
Figure 4. Bus master and memory devices on the SPI bus
1. The Write Protect or Top Sector Lock (W or TSL) signal should be driven, High or Low as appropriate.
Figure 4 shows an example of three devices connected to an MCU, on an SPI bus. Only one
device is selected at a time, so only one device drives the Serial Data output (Q) line at a
time, the other devices are high impedance. Resistors R (represented in Figure 4) ensure
that the M25PE20 or M25PE10 is not selected if the Bus Master leaves the S line in the high
impedance state. As the Bus Master may enter a state where all inputs/outputs are in high
impedance at the same time (for example, when the Bus Master is reset), the clock line (C)
must be connected to an external pull-down resistor so that, when all inputs/outputs become
high impedance, the S line is pulled High while the C line is pulled Low (thus ensuring that S
and C do not become High at the same time, and so, that the tSHCH requirement is met).
The typical value of R is 100 kΩ, assuming that the time constant R*Cp (Cp = parasitic
capacitance of the bus line) is shorter than the time during which the Bus Master leaves the
SPI bus in high impedance.
AI13558b
SPI Bus Master
SPI memory
device
SDO
SDI
SCK
CQD
S
SPI memory
device
CQD
S
SPI memory
device
CQD
S
CS3 CS2 CS1
SPI interface with
(CPOL, CPHA) =
(0, 0) or (1, 1)
W
or
TSL
Reset W
or
TSL
Reset W
or
TSL
Reset
RRR
VCC
VCC VCC VCC
VSS
VSS VSS VSS
R
M25PE20, M25PE10 SPI modes
11/64
Example: Cp = 50 pF, that is R*Cp = 5 µs <=> the application must ensure that the Bus
Master never leaves the SPI bus in the high impedance state for a time period shorter than
5µs.
Figure 5. SPI modes supported
AI01438B
C
MSB
CPHA
D
0
1
CPOL
0
1
Q
C
MSB
Operating features M25PE20, M25PE10
12/64
4 Operating features
4.1 Sharing the overhead of modifying data
To write or program one (or more) data bytes, two instructions are required: Write Enable
(WREN), which is one byte, and a Page Write (PW) or Page Program (PP) sequence, which
consists of four bytes plus data. This is followed by the internal cycle (of duration tPW or tPP).
To share this overhead, the Page Write (PW) or Page Program (PP) instruction allows up to
256 bytes to be programmed (changing bits from 1 to 0) or written (changing bits to 0 or 1) at
a time, provided that they lie in consecutive addresses on the same page of memory.
4.2 An easy way to modify data
The Page Write (PW) instruction provides a convenient way of modifying data (up to 256
contiguous bytes at a time), and simply requires the start address, and the new data in the
instruction sequence.
The Page Write (PW) instruction is entered by driving Chip Select (S) Low, and then
transmitting the instruction byte, three address bytes (A23-A0) and at least one data byte,
and then driving Chip Select (S) High. While Chip Select (S) is being held Low, the data
bytes are written to the data buffer, starting at the address given in the third address byte
(A7-A0). When Chip Select (S) is driven High, the Write cycle starts. The remaining,
unchanged, bytes of the data buffer are automatically loaded with the values of the
corresponding bytes of the addressed memory page. The addressed memory page then
automatically put into an Erase cycle. Finally, the addressed memory page is programmed
with the contents of the data buffer.
All of this buffer management is handled internally, and is transparent to the user. The user
is given the facility of being able to alter the contents of the memory on a byte-by-byte basis.
For optimized timings, it is recommended to use the Page Write (PW) instruction to write all
consecutive targeted bytes in a single sequence versus using several Page Write (PW)
sequences with each containing only a few bytes (see Page Write (PW), Ta bl e 2 3 : AC
characteristics (50 MHz operation, T9HX (0.11 µm) process) and Table 24: AC
characteristics (75 MHz operation, T9HX (0.11 µm) process)).
M25PE20, M25PE10 Operating features
13/64
4.3 A fast way to modify data
The Page Program (PP) instruction provides a fast way of modifying data (up to 256
contiguous bytes at a time), provided that it only involves resetting bits to 0 that had
previously been set to 1.
This might be:
●when the designer is programming the device for the first time
●when the designer knows that the page has already been erased by an earlier Page
Erase (PE), SubSector Erase (SSE), Sector Erase (SE) or Bulk Erase (BE) instruction.
This is useful, for example, when storing a fast stream of data, having first performed
the erase cycle when time was available
●when the designer knows that the only changes involve resetting bits to ‘0’ that are still
set to ‘1’. When this method is possible, it has the additional advantage of minimizing
the number of unnecessary erase operations, and the extra stress incurred by each
page.
For optimized timings, it is recommended to use the Page Program (PP) instruction to
program all consecutive targeted bytes in a single sequence versus using several Page
Program (PP) sequences with each containing only a few bytes (see Section 6.10: Page
Program (PP), Table 23: AC characteristics (50 MHz operation, T9HX (0.11 µm) process)
and Table 24: AC characteristics (75 MHz operation, T9HX (0.11 µm) process)).
4.4 Polling during a Write, Program or Erase cycle
A further improvement in the write, program or erase time can be achieved by not waiting for
the worst case delay (tPW, tPP
, tPE, tBE, tW or tSE). The Write In Progress (WIP) bit is
provided in the Status Register so that the application program can monitor its value, polling
it to establish when the previous cycle is complete.
4.5 Reset
An internal power-on Reset circuit helps protect against inadvertent data writes. Addition
protection is provided by driving Reset (Reset) Low during the power-on process, and only
driving it High when VCC has reached the correct voltage level, VCC(min).
4.6 Active Power, Standby Power and Deep Power-down modes
When Chip Select (S) is Low, the device is selected, and in the Active Power mode.
When Chip Select (S) is High, the device is deselected, but could remain in the Active Power
mode until all internal cycles have completed (Program, Erase, Write). The device then goes
in to the Standby Power mode. The device consumption drops to ICC1.
The Deep Power-down mode is entered when the specific instruction (the Deep Power-
down (DP) instruction) is executed. The device consumption drops further to ICC2. The
device remains in this mode until the Release from Deep Power-down instruction is
executed.
Operating features M25PE20, M25PE10
14/64
All other instructions are ignored while the device is in the Deep Power-down mode. This
can be used as an extra software protection mechanism, when the device is not in active
use, to protect the device from inadvertent Write, Program or Erase instructions.
4.7 Status Register
The Status Register contains two status bits that can be read by the Read Status Register
(RDSR) instruction. See Section 6.4: Read Status Register (RDSR) for a detailed
description of the Status Register bits.
4.8 Protection modes
The environments where non-volatile memory devices are used can be very noisy. No SPI
device can operate correctly in the presence of excessive noise. To help combat this, the
M25PE10 and M25PE20 feature the following data protection mechanisms:
4.8.1 Protocol-related protections
●Power On Reset and an internal timer (tPUW) can provide protection against inadvertent
changes while the power supply is outside the operating specification
●Program, Erase and Write instructions are checked that they consist of a number of
clock pulses that is a multiple of eight, before they are accepted for execution
●All instructions that modify data must be preceded by a Write Enable (WREN)
instruction to set the Write Enable Latch (WEL) bit. This bit is returned to its reset state
by the following events:
–Power-up
– Reset (RESET) driven Low
– Write Disable (WRDI) instruction completion
– Page Write (PW) instruction completion
– Page Program (PP) instruction completion
– Write to Lock Register (WRLR) instruction completion
– Page Erase (PE) instruction completion
– SubSector Erase (SSE) instruction completion
– Sector Erase (SE) instruction completion
– Bulk Erase (BE) instruction completion
●The Reset (Reset) signal can be driven Low to freeze and reset the internal logic. For
the specific cases of Program and Write cycles, the designer should refer to
Section 6.5: Write Status Register (WRSR), Section 6.9: Page Write (PW),
Section 6.10: Page Program (PP), Section 6.12: Page Erase (PE), Section 6.14: Sector
Erase (SE), and Section 6.13: SubSector Erase (SSE), and to Table 14: Device status
after a Reset Low pulse
●In addition to the low power consumption feature, the Deep Power-down mode offers
extra software protection from inadvertent Write, Program and Erase instructions while
the device is not in active use.
M25PE20, M25PE10 Operating features
15/64
4.8.2 Specific hardware and software protections
The M25PE10/M25PE20 features a Hardware Protected mode, HPM, and two Software
Protected modes, SPM1 and SPM2, that can be combined to protect the memory array as
required. They are described below:
HPM
●HPM in T7X process (see Important note on page 6):
The Hardware Protected mode (HPM) is entered when Top Sector Lock (TSL) is driven
Low, causing the top 256 pages of memory to become read-only. When Top Sector
Lock (TSL) is driven High, the top 256 pages of memory behave like the other pages of
memory and the protection depends on the Block Protect bits (see SPM2 below)
●HPM in T9HX process (see Important note on page 6):
The Hardware Protected mode (HPM) is used to write-protect the non-volatile bits of
the Status Register (that is, the Block Protect bits, BP1 and BP0, and the Status
Register Write Disable bit, SRWD).
HPM is entered by driving the Write Protect (W) signal Low with the SRWD bit set to
High. This additional protection allows the Status Register to be hardware-protected.
(see also Section 6.4.4: SRWD bit).
SPM1 and SPM2
●The first Software Protected mode (SPM1) is managed by specific Lock Registers
assigned to each 64-Kbyte sector.
The Lock Registers can be read and written using the Read Lock Register (RDLR) and
Write to Lock Register (WRLR) instructions.
In each Lock Register two bits control the protection of each sector: the Write Lock bit
and the Lock Down bit.
– Write Lock bit:
The Write Lock bit determines whether the contents of the sector can be modified
(using the Write, Program or Erase instructions). When the Write Lock bit is set to
‘1’, the sector is write protected – any operations that attempt to change the data
in the sector will fail. When the Write Lock bit is reset to ‘0’, the sector is not write-
protected by the Lock Register, and may be modified
– Lock Down bit:
The Lock Down bit provides a mechanism for protecting software data from simple
hacking and malicious attack. When the Lock Down bit is set to ‘1’, further
modification to the Write Lock and Lock Down bits cannot be performed. A reset,
or power-up, is required before changes to these bits can be made. When the
Lock Down bit is reset to ‘0’, the Write Lock and Lock Down bits can be changed.
The Write Lock bit and the Lock Down bit are volatile and their value is reset to ‘0’ after
a power-down or a reset.
Operating features M25PE20, M25PE10
16/64
●The second Software Protected mode (SPM2) uses the block protect (BP1, BP0, see
Section 6.4.3)) bits to allow part of the memory to be configured as read-only.
Table 2. Software protection truth table (sectors 0 to 3 for M25PE20 or sectors 0
to 1 for M25PE10, 64-Kbyte granularity)
Sector Lock Register
Protection status
Lock
Down bit
Write
Lock bit
00
Sector unprotected from program/erase/write operations, protection status
reversible
01
Sector protected from program/erase/write operations, protection status
reversible
10
Sector unprotected from program/erase/write operations,
sector protection status cannot be changed except by a reset or power-up.
11
Sector protected from program/erase/write operations,
Sector protection status cannot be changed except by a reset or power-up.
Table 3. Protected area sizes for M25PE20
Status Register
content Memory content
BP1 bit BP0 bit Protected area Unprotected area
0 0 none All sectors(1) (four sectors: 0 to 3)
1. The device is ready to accept a Bulk Erase instruction if, and only if, all block protect bits (BP1, BP0) are 0.
0 1 Upper quarter (sector 3) Lower three quarters (three sectors: 0 to 2)
1 0 Upper half (two sectors: 2 and 3) Lower half (two sectors: 0 to 1)
1 1 All sectors (four sectors: 0 to 3) none
Table 4. Protected area sizes for M25PE10
Status Register
content Memory content
BP1 bit BP0 bit Protected area Unprotected area
0 0 none All sectors(1) (two sectors: 0 and 1)
1. The device is ready to accept a Bulk Erase instruction if, and only if, all block protect bits (BP1, BP0) are 0.
0 1 Upper half (1 sector: sector 1) Lower half (one sector: sector 0)
1 0 Upper half (1 sector: sector 1) Lower half (one sector: sector 0)
1 1 All sectors (two sectors: 0 and 1) none
M25PE20, M25PE10 Memory organization
17/64
5 Memory organization
The M25PE20 memory is organized as:
●1024 pages (256 bytes each).
●262,144 bytes (8 bits each)
●64 subsectors (32 Kbits, 4,096 bytes each)
●4 sectors (512 Kbits, 65,536 bytes each)
The M25PE10 memory is organized as:
●512 pages (256 bytes each).
●131,074 bytes (8 bits each)
●32 subsectors (32 Kbits, 4,096 bytes each)
●2 sectors (512 Kbits, 65,536 bytes each)
In the M25PE20 and M25PE10, each page can be individually:
●programmed (bits are programmed from 1 to 0)
●erased (bits are erased from 0 to 1)
●written (bits are changed to either 0 or 1).
The device is page or sector erasable (bits are erased from 0 to 1).
Table 5. M25PE20 memory organization
Sector Subsector Address range
3
63 3F000h 3FFFFh
...
...
...
48 30000h 30FFFh
2
47 2F000h 2FFFFh
...
...
...
32 20000h 20FFFh
1
31 1F000h 1FFFFh
...
...
...
16 10000h 10FFFh
0
15 0F000h 0FFFFh
...
...
...
4 04000h 04FFFh
3 03000h 03FFFh
2 02000h 02FFFh
1 01000h 01FFFh
0 00000h 00FFFh
Memory organization M25PE20, M25PE10
18/64
Table 6. M25PE10 memory organization
Sector Subsector Address range
1
31 1F000h 1FFFFh
...
...
...
16 10000h 10FFFh
0
15 0F000h 0FFFFh
...
...
...
4 04000h 04FFFh
3 03000h 03FFFh
2 02000h 02FFFh
1 01000h 01FFFh
0 00000h 00FFFh
M25PE20, M25PE10 Memory organization
19/64
Figure 6. M25PE20 block diagram
1. These features (in gray) are only available in the T7X process.
AI3294b
S
TSL or W Control Logic High Voltage
Generator
I/O Shift Register
Address Register
and Counter
256 byte
Data Buffer
256 bytes (page size)
X Decoder
Y Decoder
C
D
Q
Status
Register
00000h
3FFFFh
000FFh
Reset
2FFFFh
3FF00h Top 256 pages can
be made read-only
by using the TSL pin(1)
The whole memory array
can be made read-only
on a 64-Kbyte basis
through the Lock
Registers
Memory organization M25PE20, M25PE10
20/64
Figure 7. M25PE10 block diagram
1. These features (in gray) are only available in the T7X process.
AI13295b
S
TSL or W Control Logic High Voltage
Generator
I/O Shift Register
Address Register
and Counter
256 byte
Data Buffer
256 bytes (page size)
X Decoder
Y Decoder
C
D
Q
Status
Register
00000h
1FFFFh
000FFh
Reset
FFFFh
1FF00h
Top 256 pages can
be made read-only
by using the TSL pin
(1)
The whole memory array
can be made read-only
on a 64-Kbyte basis
through the Lock
Registers
M25PE20, M25PE10 Instructions
21/64
6 Instructions
All instructions, addresses and data are shifted in and out of the device, most significant bit
first.
Serial Data input (D) is sampled on the first rising edge of Serial Clock (C) after Chip Select
(S) is driven Low. Then, the one-byte instruction code must be shifted into the device, most
significant bit first, on Serial Data input (D), each bit being latched on the rising edges of
Serial Clock (C).
The instruction set is listed in Ta b le 7 .
Every instruction sequence starts with a one-byte instruction code. Depending on the
instruction, this might be followed by address bytes, or by data bytes, or by both or none.
In the case of a Read Data Bytes (READ), Read Data Bytes at Higher Speed (Fast_Read),
Read Status Register (RDSR) or Read to Lock Register (RDLR) instruction, the shifted-in
instruction sequence is followed by a data-out sequence. Chip Select (S) can be driven High
after any bit of the data-out sequence is being shifted out.
In the case of a Page Write (PW), Page Program (PP), Page Erase (PE), SubSector Erase
(SSE), Sector Erase (SE), Bulk Erase (BE), Write Enable (WREN), Write Disable (WRDI),
Write Status Register (WRSR), Write to Lock Register (WRLR), Deep Power-down (DP) or
Release from Deep Power-down (RDP) instruction, Chip Select (S) must be driven High
exactly at a byte boundary, otherwise the instruction is rejected, and is not executed. That is,
Chip Select (S) must driven High when the number of clock pulses after Chip Select (S)
being driven Low is an exact multiple of eight.
All attempts to access the memory array during a Write cycle, Program cycle or Erase cycle
are ignored, and the internal Write cycle, Program cycle or Erase cycle continues
unaffected.
Instructions M25PE20, M25PE10
22/64
Table 7. Instruction set
Instruction Description One-byte
instruction code
Addr
bytes
Dummy
bytes
Data
bytes
WREN Write Enable 0000 0110 06h 0 0 0
WRDI Write Disable 0000 0100 04h 0 0 0
RDID Read Identification 1001 1111 9Fh 0 0 1 to 20(1)
1. The 17 bytes of Unique ID code are available only in the T9HX process (see Important note on page 6).
RDSR(2) Read Status Register 0000 0101 05h 0 0 1 to ∞
WRLR(2) Write to Lock Register 1110 0101 E5h 3 0 1
WRSR(2)
2. Instruction available only in the T9HX process (see Important note on page 6).
Write Status Register 0000 0001 01h 0 0 1
RDLR Read Lock Register 1110 1000 E8h 3 0 1
READ Read Data Bytes 0000 0011 03h 3 0 1 to ∞
FAST_READ Read Data Bytes at Higher Speed 0000 1011 0Bh 3 1 1 to ∞
PW Page Write 0000 1010 0Ah 3 0 1 to 256
PP Page Program 0000 0010 02h 3 0 1 to 256
PE Page Erase 1101 1011 DBh 3 0 0
SSE(2) SubSector Erase 0010 0000 20h 3 0 0
SE Sector Erase 1101 1000 D8h 3 0 0
BE(2) Bulk Erase 1100 0111 C7h 0 0 0
DP Deep Power-down 1011 1001 B9h 0 0 0
RDP Release from Deep Power-down 1010 1011 ABh 0 0 0
M25PE20, M25PE10 Instructions
23/64
6.1 Write Enable (WREN)
The Write Enable (WREN) instruction (Figure 8) sets the Write Enable Latch (WEL) bit.
The Write Enable Latch (WEL) bit must be set prior to every Page Write (PW), Page
Program (PP), Page Erase (PE), and Sector Erase (SE) instruction.
The Write Enable (WREN) instruction is entered by driving Chip Select (S) Low, sending the
instruction code, and then driving Chip Select (S) High.
Figure 8. Write Enable (WREN) instruction sequence
C
D
AI02281E
S
Q
21 34567
High Impedance
0
Instruction
Instructions M25PE20, M25PE10
24/64
6.2 Write Disable (WRDI)
The Write Disable (WRDI) instruction (Figure 9) resets the Write Enable Latch (WEL) bit.
The Write Disable (WRDI) instruction is entered by driving Chip Select (S) Low, sending the
instruction code, and then driving Chip Select (S) High.
The Write Enable Latch (WEL) bit is reset under the following conditions:
●Power-up
●Write Disable (WRDI) instruction completion
●Page Write (PW) instruction completion
●Page Program (PP) instruction completion
●Write Status Register (WRSR) instruction completion
●Write to Lock Register (WRLR) instruction completion
●Page Erase (PE) instruction completion
●SubSector Erase (SSE) instruction completion
●Sector Erase (SE) instruction completion
●Bulk Erase (BE) instruction completion
Figure 9. Write Disable (WRDI) instruction sequence
C
D
AI03750D
S
Q
21 34567
High Impedance
0
Instruction
M25PE20, M25PE10 Instructions
25/64
6.3 Read Identification (RDID)
The Read Identification (RDID) instruction allows to read the device identification data:
●Manufacturer identification (1 byte)
●Device identification (2 bytes)
●A Unique ID code (UID) (17 bytes, of which 16 available upon customer request)(a).
The manufacturer identification is assigned by JEDEC, and has the value 20h for Numonyx.
The device identification is assigned by the device manufacturer, and indicates the memory
type in the first byte (80h), and the memory capacity of the device in the second byte (12h
for the M25PE20 and 11h for the M25PE10). The UID contains the length of the following
data in the first byte (set to 10h), and 16 bytes of the optional Customized Factory Data
(CFD) content. The CFD bytes are read-only and can be programmed with customers data
upon their demand. If the customers do not make requests, the devices are shipped with all
the CFD bytes programmed to zero (00h).
Any Read Identification (RDID) instruction while an Erase or Program cycle is in progress, is
not decoded, and has no effect on the cycle that is in progress.
The device is first selected by driving Chip Select (S) Low. Then, the 8-bit instruction code
for the instruction is shifted in. After this, the 24-bit device identification, stored in the
memory, the 8-bit CFD length followed by 16 bytes of CFD content will be shifted out on
Serial Data output (Q). Each bit is shifted out during the falling edge of Serial Clock (C).
The instruction sequence is shown in Figure 10.
The Read Identification (RDID) instruction is terminated by driving Chip Select (S) High at
any time during data output.
When Chip Select (S) is driven High, the device is put in the Standby Power mode. Once in
the Standby Power mode, the device waits to be selected, so that it can receive, decode and
execute instructions.
a. The 17 bytes of Unique ID code are available only in the T9HX process (see Important note on
page 6).
Table 8. Read Identification (RDID) data-out sequence
Manufacturer
identification
Device identification UID(1)
Memory type Memory capacity CFD length CFD content
20h 80h 12h (M25PE20) 10h 16 bytes
20h 80h 11h (M25PE10) 10h 16 bytes
1. The Unique ID code is available only in the T9HX process (see Important note on page 6).
Instructions M25PE20, M25PE10
26/64
Figure 10. Read Identification (RDID) instruction sequence and data-out sequence
1. The Unique ID code is available only in the T9HX process (see Important note on page 6).
C
D
S
213456789101112 13 14 15
Instruction
0
AI06809c
Q
Manufacturer identification
High Impedance
MSB
Device identification
MSB
15 14 13 3 2 1 0
16 17 18 28 29 30 31
MSB
UID
M25PE20, M25PE10 Instructions
27/64
6.4 Read Status Register (RDSR)
The Read Status Register (RDSR) instruction allows the Status Register to be read. The
Status Register may be read at any time, even while a Program, Erase or Write cycle is in
progress. When one of these cycles is in progress, it is recommended to check the Write In
Progress (WIP) bit before sending a new instruction to the device. It is also possible to read
the Status Register continuously, as shown in Figure 11.
The status bits of the Status Register are as follows:
6.4.1 WIP bit
The Write In Progress (WIP) bit indicates whether the memory is busy with a Write, Program
or Erase cycle. When set to ‘1’, such a cycle is in progress, when reset to ‘0’ no such cycle is
in progress.
6.4.2 WEL bit
The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch.
When set to ‘1’ the internal Write Enable Latch is set, when set to ‘0’ the internal Write
Enable Latch is reset and no write, program or erase instruction is accepted.
6.4.3 BP1, BP0 bits
The Block Protect (BP1, BP0) bits are non-volatile. They define the size of the area to be
software protected against Program and Erase instructions. These bits are written with the
Write Status Register (WRSR) instruction. When one or both of the Block Protect (BP1,
BP0) bits is set to ‘1’, the relevant memory area (as defined in Ta bl e 3 ) becomes protected
against Page Program (PP), Page Erase (PE), Sector Erase (SE) and SubSector Erase
(SSE) instructions. The Block Protect (BP1, BP0) bits can be written provided that the
Hardware Protected mode has not been set. The Bulk Erase (BE) instruction is executed if,
and only if:
●all Block Protect (BP1, BP0) bits are 0
●the Lock Register protection bits are not all set to ‘1’.
6.4.4 SRWD bit
The Status Register Write Disable (SRWD) bit is operated in conjunction with the Write
Protect (W) signal. When the Status Register Write Disable (SRWD) bit is set to ‘1’, and
Write Protect (W) is driven Low, the non-volatile bits of the Status Register (SRWD, BP1,
BP0) become read-only bits. In such a state, as the Write Status Register (WRSR)
instruction is no longer accepted for execution, the definition of the size of the Write
Protected area cannot be further modified.
Table 9. Status Register format(1) (2)
1. SRWD = Status Register Write Protect bit; BP0, BP1 = block protect bits (only available with T9HX).
2. The BP bits and the SRWD bit exist only in the T9HX process.
b7 b0
SRWD 0 0 0 BP1 BP0 WEL(3)
3. WEL (Write Enable Latch) and WIP (Write In Progress) are volatile read-only bits (WEL is set and reset by
specific instructions; WIP is automatically set and reset by the internal logic of the device).
WIP(3)
Instructions M25PE20, M25PE10
28/64
Figure 11. Read Status Register (RDSR) instruction sequence and data-out
sequence
C
D
S
21 3456789101112131415
Instruction
0
AI02031E
Q76543210
Status Register Out
High Impedance
MSB
76543210
Status Register Out
MSB
7
M25PE20, M25PE10 Instructions
29/64
6.5 Write Status Register (WRSR)
The Write Status Register (WRSR) instruction allows new values to be written to the Status
Register.
Note: The Status Register BPi and SRWD bits are available in the T9HX process only. See
Important note on page 6 for more details.
Before the Write Status Register (WRSR) instruction can be accepted, a Write Enable
(WREN) instruction must previously have been executed. After the Write Enable (WREN)
instruction has been decoded and executed, the device sets the Write Enable Latch (WEL).
The Write Status Register (WRSR) instruction is entered by driving Chip Select (S) Low,
followed by the instruction code and the data byte on Serial Data input (D).
The instruction sequence is shown in Figure 12.
The Write Status Register (WRSR) instruction has no effect on b6, b5, b1 and b0 of the
Status Register. b6 and b5 are always read as 0.
Chip Select (S) must be driven High after the eighth bit of the data byte has been latched in.
If not, the Write Status Register (WRSR) instruction is not executed. As soon as Chip Select
(S) is driven High, the self-timed Write Status Register cycle (whose duration is tW) is
initiated. While the Write Status Register cycle is in progress, the Status Register may still
be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP)
bit is 1 during the self-timed Write Status Register cycle, and is 0 when it is completed.
When the cycle is completed, the Write Enable Latch (WEL) is reset.
The Write Status Register (WRSR) instruction allows the user to change the values of the
Block Protect (BP1, BP0) bits, to define the size of the area that is to be treated as read-
only, as defined in Ta b l e 3 . The Write Status Register (WRSR) instruction also allows the
user to set or reset the Status Register Write Disable (SRWD) bit in accordance with the
Write Protect (W) signal (see Section 6.4.4).
If a Write Status Register (WRSR) instruction is interrupted by a Reset Low pulse, the
internal cycle of the Write Status Register operation (whose duration is tW) is first completed
(provided that the supply voltage VCC remains within the operating range). After that the
device enters the Reset mode (see also Table 14: Device status after a Reset Low pulse
and Table 26: Timings after a Reset Low pulse).
Figure 12. Write Status Register (WRSR) instruction sequence
C
D
AI02282D
S
Q
21 3456789101112131415
High Impedance
Instruction Status
Register In
0
765432 0
1
MSB
Instructions M25PE20, M25PE10
30/64
The protection features of the device are summarized in Ta bl e 1 0.
When the Status Register Write Disable (SRWD) bit of the Status Register is 0 (its initial
delivery state), it is possible to write to the Status Register provided that the Write Enable
Latch (WEL) bit has previously been set by a Write Enable (WREN) instruction, regardless
of the whether Write Protect (W) is driven High or Low.
When the Status Register Write Disable (SRWD) bit of the Status Register is set to ‘1’, two
cases need to be considered, depending on the state of Write Protect (W):
●If Write Protect (W) is driven High, it is possible to write to the Status Register provided
that the Write Enable Latch (WEL) bit has previously been set by a Write Enable
(WREN) instruction
●If Write Protect (W) is driven Low, it is not possible to write to the Status Register even
if the Write Enable Latch (WEL) bit has previously been set by a Write Enable (WREN)
instruction. Attempts to write to the Status Register are rejected, and are not accepted
for execution. As a consequence, all the data bytes in the memory area that are
software protected (SPM2) by the Block Protect (BP1, BP0) bits of the Status Register,
are also hardware protected against data modification.
Regardless of the order of the two events, the Hardware Protected Mode (HPM) can be
entered:
●by setting the Status Register Write Disable (SRWD) bit after driving Write Protect (W)
Low
●or by driving Write Protect (W) Low after setting the Status Register Write Disable
(SRWD) bit.
The only way to exit the Hardware Protected Mode (HPM) once entered is to pull Write
Protect (W) High.
If Write Protect (W) is permanently tied High, the Hardware Protected mode (HPM) can
never be activated, and only the Software Protected mode (SPM2), using the Block Protect
(BP1, BP0) bits of the Status Register, can be used.
Table 10. Protection modes (T9HX process only, see Important note on page 6)
W
signal
SRWD
bit Mode Write protection of the
Status Register
Memory content
Protected area(1)
1. As defined by the values in the Block Protect (BP1, BP0) bits of the Status Register, as shown in Table 3.
Unprotected area(1)
10
Second
Software
Protected
(SPM2)
Status Register is writable
(if the WREN instruction
has set the WEL bit)
The values in the SRWD,
BP1 and BP0 bits can be
changed
Protected against
Page Program,
Sector Erase and
Bulk Erase
Ready to accept
Page Program and
Sector Erase
instructions
00
11
01
Hardware
Protected
(HPM)
Status Register is
Hardware write protected
The values in the SRWD,
BP1 and BP0 bits cannot
be changed
Protected against
Page Program,
Sector Erase and
Bulk Erase
Ready to accept
Page Program and
Sector Erase
instructions
M25PE20, M25PE10 Instructions
31/64
6.6 Read Data Bytes (READ)
The device is first selected by driving Chip Select (S) Low. The instruction code for the Read
Data Bytes (READ) instruction is followed by a 3-byte address (A23-A0), each bit being
latched-in during the rising edge of Serial Clock (C). Then the memory contents, at that
address, is shifted out on Serial Data output (Q), each bit being shifted out, at a maximum
frequency fR, during the falling edge of Serial Clock (C).
The instruction sequence is shown in Figure 13.
The first byte addressed can be at any location. The address is automatically incremented
to the next higher address after each byte of data is shifted out. The whole memory can,
therefore, be read with a single Read Data Bytes (READ) instruction. When the highest
address is reached, the address counter rolls over to 000000h, allowing the read sequence
to be continued indefinitely.
The Read Data Bytes (READ) instruction is terminated by driving Chip Select (S) High. Chip
Select (S) can be driven High at any time during data output. Any Read Data Bytes (READ)
instruction, while an Erase, Program or Write cycle is in progress, is rejected without having
any effects on the cycle that is in progress.
Figure 13. Read Data Bytes (READ) instruction sequence and data-out sequence
1. Address bits A23 to A18 are ‘Don’t care’ in the M25PE20. Address bits A23 to A17 are ‘Don’t care’ in the
M25PE10.
C
D
AI03748D
S
Q
23
21 345678910 2829303132333435
2221 3210
36 37 38
76543 1 7
0
High Impedance Data Out 1
Instruction 24-Bit Address
0
MSB
MSB
2
39
Data Out 2
Instructions M25PE20, M25PE10
32/64
6.7 Read Data Bytes at Higher Speed (FAST_READ)
The device is first selected by driving Chip Select (S) Low. The instruction code for the Read
Data Bytes at Higher Speed (FAST_READ) instruction is followed by a 3-byte address (A23-
A0) and a dummy byte, each bit being latched-in during the rising edge of Serial Clock (C).
Then the memory contents, at that address, is shifted out on Serial Data output (Q), each bit
being shifted out, at a maximum frequency fC, during the falling edge of Serial Clock (C).
The instruction sequence is shown in Figure 14.
The first byte addressed can be at any location. The address is automatically incremented
to the next higher address after each byte of data is shifted out. The whole memory can,
therefore, be read with a single Read Data Bytes at Higher Speed (FAST_READ)
instruction. When the highest address is reached, the address counter rolls over to
000000h, allowing the read sequence to be continued indefinitely.
The Read Data Bytes at Higher Speed (FAST_READ) instruction is terminated by driving
Chip Select (S) High. Chip Select (S) can be driven High at any time during data output. Any
Read Data Bytes at Higher Speed (FAST_READ) instruction, while an Erase, Program or
Write cycle is in progress, is rejected without having any effects on the cycle that is in
progress.
Figure 14. Read Data Bytes at Higher Speed (FAST_READ) instruction sequence
and data-out sequence
1. Address bits A23 to A18 are ‘Don’t care’ in the M25PE20. Address bits A23 to A17 are ‘Don’t care’ in the
M25PE10.
C
D
AI04006
S
Q
23
21 345678910 28293031
2221 3210
High Impedance
Instruction 24-bit address
0
C
D
S
Q
32 33 34 36 37 38 39 40 41 42 43 44 45 46
765432 0
1
DATA OUT 1
Dummy byte
MSB
76543210
DATA OUT 2
MSB MSB
7
47
765432 0
1
35
M25PE20, M25PE10 Instructions
33/64
6.8 Read Lock Register (RDLR)
Note: The Read Lock Register (RDLR) instruction is decoded only in the T9HX process (see
Important note on page 6).
The device is first selected by driving Chip Select (S) Low. The instruction code for the Read
Lock Register (RDLR) instruction is followed by a 3-byte address (A23-A0) pointing to any
location inside the concerned sector (or subsector). Each address bit is latched-in during
the rising edge of Serial Clock (C). Then the value of the Lock Register is shifted out on
Serial Data output (Q), each bit being shifted out, at a maximum frequency fC, during the
falling edge of Serial Clock (C).
The instruction sequence is shown in Figure 15.
The Read Lock Register (RDLR) instruction is terminated by driving Chip Select (S) High at
any time during data output.
Any Read Lock Register (RDLR) instruction, while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
Figure 15. Read Lock Register (RDLR) instruction sequence and data-out sequence
Table 11. Lock Registers
Bit Bit name Value Function
b7-b4 Reserved
b1 Sector Lock
Down
‘1’
The Write Lock and Lock Down bits cannot be changed. Once a
‘1’ is written to the Lock Down bit it cannot be cleared to ‘0’,
except by a reset or power-up.
‘0’ The Write Lock and Lock Down bits can be changed by writing
new values to them (default value).
b0 Sector Write
Lock
‘1’ Write, program and erase operations in this sector will not be
executed. The memory contents will not be changed.
‘0’ Write, program and erase operations in this sector are executed
and will modify the sector contents (default value).
C
D
AI10783
S
Q
23
21 345678910 2829303132333435
2221 3210
36 37 38
76543 10
High Impedance Lock Register Out
Instruction 24-bit address
0
MSB
MSB
2
39
Instructions M25PE20, M25PE10
34/64
6.9 Page Write (PW)
The Page Write (PW) instruction allows bytes to be written in the memory. Before it can be
accepted, a Write Enable (WREN) instruction must previously have been executed. After the
Write Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch
(WEL).
The Page Write (PW) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code, three address bytes and at least one data byte on Serial Data input (D).
The rest of the page remains unchanged if no power failure occurs during this write cycle.
The Page Write (PW) instruction performs a page erase cycle even if only one byte is
updated.
If the 8 least significant address bits (A7-A0) are not all zero, all transmitted data exceeding
the addressed page boundary roll over, and are written from the start address of the same
page (the one whose 8 least significant address bits (A7-A0) are all zero). Chip Select (S)
must be driven Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 16.
If more than 256 bytes are sent to the device, previously latched data are discarded and the
last 256 data bytes are guaranteed to be written correctly within the same page. If less than
256 data bytes are sent to device, they are correctly written at the requested addresses
without having any effects on the other bytes of the same page.
For optimized timings, it is recommended to use the Page Write (PW) instruction to write all
consecutive targeted bytes in a single sequence versus using several Page Write (PW)
sequences with each containing only a few bytes (see Table 23: AC characteristics (50 MHz
operation, T9HX (0.11 µm) process) and Table 24: AC characteristics (75 MHz operation,
T9HX (0.11 µm) process)).
Chip Select (S) must be driven High after the eighth bit of the last data byte has been
latched in, otherwise the Page Write (PW) instruction is not executed.
As soon as Chip Select (S) is driven High, the self-timed Page Write cycle (whose duration
is tPW) is initiated. While the Page Write cycle is in progress, the Status Register may be
read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is
1 during the self-timed Page Write cycle, and is 0 when it is completed. At some unspecified
time before the cycle is complete, the Write Enable Latch (WEL) bit is reset.
A Page Write (PW) instruction applied to a page that is Hardware Protected is not executed.
Any Page Write (PW) instruction, while an Erase, Program or Write cycle is in progress, is
rejected without having any effects on the cycle that is in progress.
M25PE20, M25PE10 Instructions
35/64
Figure 16. Page Write (PW) instruction sequence
1. Address bits A23 to A18 are ‘Don’t care’ in the M25PE20. Address bits A23 to A17 are ‘Don’t care’ in the
M25PE10.
2. 1 ≤ n ≤ 256.
C
D
AI04045
S
4241 43 44 45 46 47 48 49 50 52 53 54 5540
C
D
S
23
21 345678910 2829303132333435
2221 3210
36 37 38
Instruction 24-bit address
0
765432 0
1
Data byte 1
39
51
765432 0
1
Data byte 2
765432 0
1
Data byte 3 Data byte n
765432 0
1
MSB MSB
MSB MSB MSB
Instructions M25PE20, M25PE10
36/64
6.10 Page Program (PP)
The Page Program (PP) instruction allows bytes to be programmed in the memory
(changing bits from 1 to 0, only). Before it can be accepted, a Write Enable (WREN)
instruction must previously have been executed. After the Write Enable (WREN) instruction
has been decoded, the device sets the Write Enable Latch (WEL).
The Page Program (PP) instruction is entered by driving Chip Select (S) Low, followed by
the instruction code, three address bytes and at least one data byte on Serial Data input (D).
If the 8 least significant address bits (A7-A0) are not all zero, all transmitted data exceeding
the addressed page boundary roll over, and are programmed from the start address of the
same page (the one whose 8 least significant address bits (A7-A0) are all zero). Chip Select
(S) must be driven Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 17.
If more than 256 bytes are sent to the device, previously latched data are discarded and the
last 256 data bytes are guaranteed to be programmed correctly within the same page. If less
than 256 data bytes are sent to device, they are correctly programmed at the requested
addresses without having any effects on the other bytes of the same page.
For optimized timings, it is recommended to use the Page Program (PP) instruction to
program all consecutive targeted bytes in a single sequence versus using several Page
Program (PP) sequences with each containing only a few bytes (see Table 23: AC
characteristics (50 MHz operation, T9HX (0.11 µm) process) and Table 24: AC
characteristics (75 MHz operation, T9HX (0.11 µm) process)).
Chip Select (S) must be driven High after the eighth bit of the last data byte has been
latched in, otherwise the Page Program (PP) instruction is not executed.
As soon as Chip Select (S) is driven High, the self-timed Page Program cycle (whose
duration is tPP) is initiated. While the Page Program cycle is in progress, the Status Register
may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress
(WIP) bit is 1 during the self-timed Page Program cycle, and is 0 when it is completed. At
some unspecified time before the cycle is complete, the Write Enable Latch (WEL) bit is
reset.
A Page Program (PP) instruction applied to a page that is hardware protected is not
executed.
Any Page Program (PP) instruction, while an Erase, Program or Write cycle is in progress, is
rejected without having any effects on the cycle that is in progress.
M25PE20, M25PE10 Instructions
37/64
Figure 17. Page Program (PP) instruction sequence
1. Address bits A23 to A18 are ‘Don’t care’ in the M25PE20. Address bits A23 to A17 are ‘Don’t care’ in the
M25PE10.
2. 1 ≤ n ≤ 256.
C
D
AI04044
S
4241 43 44 45 46 47 48 49 50 52 53 54 5540
C
D
S
23
21 345678910 2829303132333435
2221 3210
36 37 38
Instruction 24-bit address
0
765432 0
1
Data byte 1
39
51
765432 0
1
Data byte 2
765432 0
1
Data byte 3 Data byte n
765432 0
1
MSB MSB
MSB MSB MSB
Instructions M25PE20, M25PE10
38/64
6.11 Write to Lock Register (WRLR)
Note: The Write to Lock Register (WRLR) instruction is decoded only in the T9HX process (see
Important note on page 6).
The Write to Lock Register (WRLR) instruction allows bits to be changed in the Lock
Registers. Before it can be accepted, a Write Enable (WREN) instruction must previously
have been executed. After the Write Enable (WREN) instruction has been decoded, the
device sets the Write Enable Latch (WEL).
The Write to Lock Register (WRLR) instruction is entered by driving Chip Select (S) Low,
followed by the instruction code, three address bytes (pointing to any address in the targeted
sector and one data byte on Serial Data input (D). The instruction sequence is shown in
Figure 18. Chip Select (S) must be driven High after the eighth bit of the data byte has been
latched in, otherwise the Write to Lock Register (WRLR) instruction is not executed.
Lock Register bits are volatile, and therefore do not require time to be written. When the
Write to Lock Register (WRLR) instruction has been successfully executed, the Write
Enable Latch (WEL) bit is reset after a delay time less than tSHSL minimum value.
Any Write to Lock Register (WRLR) instruction, while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
Figure 18. Write to Lock Register (WRLR) instruction sequence
Table 12. Lock Register In
Sector Bit Value
All sectors
b7-b2 ‘0’
b1 Sector Lock Down bit value
b0 Sector Write Lock bit value
AI10784b
C
D
S
23
21 345678910 2829303132333435
2221 3210
36 37 38
Instruction 24-bit address
0
765432 0
1
Lock Register
value
39
MSB MSB
M25PE20, M25PE10 Instructions
39/64
6.12 Page Erase (PE)
The Page Erase (PE) instruction sets to ‘1’ (FFh) all bits inside the chosen page. Before it
can be accepted, a Write Enable (WREN) instruction must previously have been executed.
After the Write Enable (WREN) instruction has been decoded, the device sets the Write
Enable Latch (WEL).
The Page Erase (PE) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code, and three address bytes on Serial Data input (D). Any address inside the
page is a valid address for the Page Erase (PE) instruction. Chip Select (S) must be driven
Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 19.
Chip Select (S) must be driven High after the eighth bit of the last address byte has been
latched in, otherwise the Page Erase (PE) instruction is not executed. As soon as Chip
Select (S) is driven High, the self-timed Page Erase cycle (whose duration is tPE) is initiated.
While the Page Erase cycle is in progress, the Status Register may be read to check the
value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-
timed Page Erase cycle, and is 0 when it is completed. At some unspecified time before the
cycle is complete, the Write Enable Latch (WEL) bit is reset.
A Page Erase (PE) instruction applied to a page that is hardware protected is not executed.
Any Page Erase (PE) instruction, while an Erase, Program or Write cycle is in progress, is
rejected without having any effects on the cycle that is in progress.
Figure 19. Page Erase (PE) instruction sequence
1. Address bits A23 to A18 are ‘Don’t care’ in the M25PE20. Address bits A23 to A17 are ‘Don’t care’ in the
M25PE10.
24-bit address
C
D
AI04046
S
21 3456789 293031
Instruction
0
23 22 2 0
1
MSB
Instructions M25PE20, M25PE10
40/64
6.13 SubSector Erase (SSE)
Note: The SubSector Erase (SSE) instruction is decoded only in the T9HX process (see Important
note on page 6).
The SubSector Erase (SSE) instruction sets to ‘1’ (FFh) all bits inside the chosen subsector.
Before it can be accepted, a Write Enable (WREN) instruction must previously have been
executed. After the Write Enable (WREN) instruction has been decoded, the device sets the
Write Enable Latch (WEL).
The SubSector Erase (SE) instruction is entered by driving Chip Select (S) Low, followed by
the instruction code, and three address bytes on Serial Data input (D). Any address inside
the SubSector (see Ta b le 5 ) is a valid address for the SubSector Erase (SE) instruction.
Chip Select (S) must be driven Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 21.
Chip Select (S) must be driven High after the eighth bit of the last address byte has been
latched in, otherwise the SubSector Erase (SE) instruction is not executed. As soon as Chip
Select (S) is driven High, the self-timed SubSector Erase cycle (whose duration is tSSE) is
initiated. While the SubSector Erase cycle is in progress, the Status Register may be read to
check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1
during the self-timed SubSector Erase cycle, and is 0 when it is completed. At some
unspecified time before the cycle is complete, the Write Enable Latch (WEL) bit is reset.
A SubSector Erase (SSE) instruction applied to a subsector that contains a page that is
hardware or software protected is not executed.
Any SubSector Erase (SSE) instruction, while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
If Reset (Reset) is driven Low while a SubSector Erase (SSE) cycle is in progress, the
SubSector Erase cycle is interrupted and data may not be erased correctly (see Tab l e 14 :
Device status after a Reset Low pulse). On Reset going Low, the device enters the Reset
mode and a time of tRHSL is then required before the device can be re-selected by driving
Chip Select (S) Low. For the value of tRHSL see Table 26: Timings after a Reset Low pulse in
Section 11: DC and AC parameters.
Figure 20. SubSector Erase (SSE) instruction sequence
1. Address bits A23 to A18 are ‘Don’t care’ in the M25PE20. Address bits A23 to A17 are ‘Don’t care’ in the
M25PE10.
24-bit address
C
D
AI12356
S
21 3456789 293031
Instruction
0
23 22 20
1
MSB
M25PE20, M25PE10 Instructions
41/64
6.14 Sector Erase (SE)
The Sector Erase (SE) instruction sets to ‘1’ (FFh) all bits inside the chosen sector. Before it
can be accepted, a Write Enable (WREN) instruction must previously have been executed.
After the Write Enable (WREN) instruction has been decoded, the device sets the Write
Enable Latch (WEL).
The Sector Erase (SE) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code, and three address bytes on Serial Data input (D). Any address inside the
sector (see Tab l e 5 or Ta b l e 6 ) is a valid address for the Sector Erase (SE) instruction. Chip
Select (S) must be driven Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 21.
Chip Select (S) must be driven High after the eighth bit of the last address byte has been
latched in, otherwise the Sector Erase (SE) instruction is not executed. As soon as Chip
Select (S) is driven High, the self-timed Sector Erase cycle (whose duration is tSE) is
initiated. While the Sector Erase cycle is in progress, the Status Register may be read to
check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1
during the self-timed Sector Erase cycle, and is 0 when it is completed. At some unspecified
time before the cycle is complete, the Write Enable Latch (WEL) bit is reset.
A Sector Erase (SE) instruction applied to a sector that contains a page that is hardware
protected is not executed.
Any Sector Erase (SE) instruction, while an Erase, Program or Write cycle is in progress, is
rejected without having any effects on the cycle that is in progress.
Figure 21. Sector Erase (SE) instruction sequence
1. Address bits A23 to A18 are ‘Don’t care’ in the M25PE20. Address bits A23 to A17 are ‘Don’t care’ in the
M25PE10.
24-bit address
C
D
AI03751D
S
21 3456789 293031
Instruction
0
23 22 2 0
1
MSB
Instructions M25PE20, M25PE10
42/64
6.15 Bulk Erase (BE)
Note: The Bulk Erase (BE) instruction is decoded only in the T9HX process (see Important note
on page 6).
The Bulk Erase (BE) instruction sets all bits to ‘1’ (FFh). Before it can be accepted, a Write
Enable (WREN) instruction must previously have been executed. After the Write Enable
(WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).
The Bulk Erase (BE) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code on Serial Data input (D). Chip Select (S) must be driven Low for the entire
duration of the sequence.
The instruction sequence is shown in Figure 22.
Chip Select (S) must be driven High after the eighth bit of the instruction code has been
latched in, otherwise the Bulk Erase instruction is not executed. As soon as Chip Select (S)
is driven High, the self-timed Bulk Erase cycle (whose duration is tBE) is initiated. While the
Bulk Erase cycle is in progress, the Status Register may be read to check the value of the
Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Bulk
Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is
completed, the Write Enable Latch (WEL) bit is reset.
Any Bulk Erase (BE) instruction, while an Erase, Program or Write cycle is in progress, is
rejected without having any effects on the cycle that is in progress. A Bulk Erase (BE)
instruction is ignored if at least one sector or subsector is write-protected (hardware or
software protection).
If Reset (Reset) is driven Low while a Bulk Erase (BE) cycle is in progress, the Bulk Erase
cycle is interrupted and data may not be erased correctly (see Table 14: Device status after
a Reset Low pulse). On Reset going Low, the device enters the Reset mode and a time of
tRHSL is then required before the device can be re-selected by driving Chip Select (S) Low.
For the value of tRHSL see Table 26: Timings after a Reset Low pulse in Section 11: DC and
AC parameters.
Figure 22. Bulk Erase (BE) instruction sequence
C
D
AI03752D
S
21 345670
Instruction
M25PE20, M25PE10 Instructions
43/64
6.16 Deep Power-down (DP)
Executing the Deep Power-down (DP) instruction is the only way to put the device in the
lowest consumption mode (the Deep Power-down mode). It can also be used as an extra
software protection mechanism, while the device is not in active use, since in this mode, the
device ignores all write, program and erase instructions.
Driving Chip Select (S) High deselects the device, and puts the device in Standby Power
mode (if there is no internal cycle currently in progress). But this mode is not the Deep
Power-down mode. The Deep Power-down mode can only be entered by executing the
Deep Power-down (DP) instruction, subsequently reducing the standby current (from ICC1 to
ICC2, as specified in Ta bl e 1 9 ).
Once the device has entered the Deep Power-down mode, all instructions are ignored
except the Release from Deep Power-down (RDP) instruction. This releases the device from
this mode.
The Deep Power-down mode automatically stops at power-down, and the device always
powers up in Standby Power mode.
The Deep Power-down (DP) instruction is entered by driving Chip Select (S) Low, followed
by the instruction code on Serial Data input (D). Chip Select (S) must be driven Low for the
entire duration of the sequence.
The instruction sequence is shown in Figure 23.
Chip Select (S) must be driven High after the eighth bit of the instruction code has been
latched in, otherwise the Deep Power-down (DP) instruction is not executed. As soon as
Chip Select (S) is driven High, it requires a delay of tDP before the supply current is reduced
to ICC2 and the Deep Power-down mode is entered.
Any Deep Power-down (DP) instruction, while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
Figure 23. Deep Power-down (DP) instruction sequence
C
D
AI03753D
S
21 345670tDP
Deep Power-down mode
Standby Power mode
Instruction
Instructions M25PE20, M25PE10
44/64
6.17 Release from Deep Power-down (RDP)
Once the device has entered the Deep Power-down mode, all instructions are ignored
except the Release from Deep Power-down (RDP) instruction. Executing this instruction
takes the device out of the Deep Power-down mode.
The Release from Deep Power-down (RDP) instruction is entered by driving Chip Select (S)
Low, followed by the instruction code on Serial Data input (D). Chip Select (S) must be
driven Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 24.
The Release from Deep Power-down (RDP) instruction is terminated by driving Chip Select
(S) High. Sending additional clock cycles on Serial Clock (C), while Chip Select (S) is driven
Low, cause the instruction to be rejected, and not executed.
After Chip Select (S) has been driven High, followed by a delay, tRDP
, the device is put in
Standby Power mode. Chip Select (S) must remain High at least until this period is over. The
device waits to be selected, so that it can receive, decode and execute instructions.
Any Release from Deep Power-down (RDP) instruction, while an Erase, Program or Write
cycle is in progress, is rejected without having any effects on the cycle that is in progress.
Figure 24. Release from Deep Power-down (RDP) instruction sequence
C
D
AI06807
S
21 345670t
RDP
Standby Power mode
Deep Power-down mode
Q
High Impedance
Instruction
M25PE20, M25PE10 Power-up and power-down
45/64
7 Power-up and power-down
At power-up and power-down, the device must not be selected (that is Chip Select (S) must
follow the voltage applied on VCC) until VCC reaches the correct value:
●VCC(min) at power-up, and then for a further delay of tVSL
●VSS at power-down
A safe configuration is provided in Section 3: SPI modes.
To avoid data corruption and inadvertent write operations during power-up, a power on reset
(POR) circuit is included. The logic inside the device is held reset while VCC is less than the
power on reset (POR) threshold value, VWI – all operations are disabled, and the device
does not respond to any instruction.
Moreover, the device ignores all Write Enable (WREN), Page Write (PW), Page Program
(PP), Page Erase (PE) and Sector Erase (SE) instructions until a time delay of tPUW has
elapsed after the moment that VCC rises above the VWI threshold. However, the correct
operation of the device is not guaranteed if, by this time, VCC is still below VCC(min). No
write, program or erase instructions should be sent until the later of:
●tPUW after VCC passed the VWI threshold
●tVSL after VCC passed the VCC(min) level
These values are specified in Ta bl e 1 3 .
If the delay, tVSL, has elapsed, after VCC has risen above VCC(min), the device can be
selected for read instructions even if the tPUW delay is not yet fully elapsed.
As an extra protection, the Reset (Reset) signal could be driven Low for the whole duration
of the power-up and power-down phases.
At power-up, the device is in the following state:
●The device is in the Standby Power mode (not the Deep Power-down mode)
●The Write Enable Latch (WEL) bit is reset
●The Write In Progress (WIP) bit is reset
●The Lock Registers are reset (Write Lock bit, Lock Down bit) = (0, 0).
Normal precautions must be taken for supply rail decoupling, to stabilize the VCC supply.
Each device in a system should have the VCC rail decoupled by a suitable capacitor close to
the package pins. (Generally, this capacitor is of the order of 100 nF).
At power-down, when VCC drops from the operating voltage, to below the power on reset
(POR) threshold voltage, VWI, all operations are disabled and the device does not respond
to any instruction. The designer needs to be aware that if a power-down occurs while a
Write, Program or Erase cycle is in progress, some data corruption can result.
Power-up and power-down M25PE20, M25PE10
46/64
Figure 25. Power-up timing
Table 13. Power-up timing and VWI threshold
Symbol Parameter Min. Max. Unit
tVSL(1)
1. These parameters are characterized only, over the temperature range –40 °C to +85 °C.
VCC(min) to S low 30 µs
tPUW(1) Time delay before the first write, program or erase instruction 1 10 ms
VWI(1) Write inhibit voltage 1.5 2.5 V
VCC
AI04009C
VCC(min)
VWI
Reset state
of the
device
Chip selection not allowed
Program, Erase and Write commands are rejected by the device
tVSL
tPUW
time
Read access allowed Device fully
accessible
VCC(max)
M25PE20, M25PE10 Reset
47/64
8 Reset
Driving Reset (Reset) Low while an internal operation is in progress will affect this operation
(write, program or erase cycle) and data may be lost.
All the Lock bits are reset to ‘0’ after a Reset Low pulse.
Ta bl e 1 4 shows the status of the device after a Reset Low pulse.
9 Initial delivery state
The device is delivered with the memory array erased: all bits are set to ‘1’ (each byte
contains FFh). All usable Status Register bits are 0.
Table 14. Device status after a Reset Low pulse
Conditions:
Reset pulse occurred Lock bits status Internal logic
status Addressed data
While decoding an instruction(1): WREN,
WRDI, RDID, RDSR, READ, RDLR,
Fast_Read, WRLR, PW, PP, PE, SE, BE,
SSE, DP, RDP
1. S remains Low while Reset is Low.
Reset to ‘0’ Same as POR Not significant
Under completion of an Erase or Program
cycle of a PW, PP, PE, SSE, SE, BE
operation
Reset to ‘0’ Equivalent to
POR
Addressed data
could be modified
Under completion of a WRSR operation Reset to ‘0’ Equivalent to
POR (after tW)
Write is correctly
completed
Device deselected (S High) and in Standby
mode Reset to ‘0’ Same as POR Not significant
Maximum ratings M25PE20, M25PE10
48/64
10 Maximum ratings
Stressing the device above the rating listed in Table 15: Absolute maximum ratings may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the Numonyx SURE Program
and other relevant quality documents.
Table 15. Absolute maximum ratings
Symbol Parameter Min. Max. Unit
TSTG Storage temperature –65 150 °C
TLEAD Lead temperature during soldering See note (1)
1. Compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb assembly), the Numonyx
ECOPACK® 7191395 specification, and the European directive on Restrictions on Hazardous Substances
(RoHS) 2002/95/EU.
°C
VIO Input and output voltage (with respect to ground) –0.6 VCC +0.6 V
VCC Supply voltage –0.6 4.0 V
VESD Electrostatic discharge voltage (Human Body model)(2)
2. JEDEC Std JESD22-A114A (C1 = 100 pF, R1 = 1500 Ω, R2 = 500 Ω).
–2000 2000 V
M25PE20, M25PE10 DC and AC parameters
49/64
11 DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the devices. The parameters in the DC and AC characteristic tables that
follow are derived from tests performed under the measurement conditions summarized in
the relevant tables. Designers should check that the operating conditions in their circuit
match the measurement conditions when relying on the quoted parameters.
1. Output Hi-Z is defined as the point where data out is no longer driven.
Figure 26. AC measurement I/O waveform
Table 16. Operating conditions
Symbol Parameter Min. Max. Unit
VCC Supply voltage 2.7 3.6 V
TAAmbient operating temperature –40 85 °C
Table 17. AC measurement conditions
Symbol Parameter Min. Max. Unit
CLLoad capacitance 30 pF
Input rise and fall times 5 ns
Input pulse voltages 0.2VCC to 0.8VCC V
Input and output timing reference voltages 0.3VCC to 0.7VCC V
Table 18. Capacitance(1)
1. Sampled only, not 100% tested, at TA=25 °C and a frequency of 25 MHz.
Symbol Parameter Test condition Min. Max. Unit
COUT Output capacitance (Q) VOUT = 0 V 8 pF
CIN Input capacitance (other pins) VIN = 0 V 6 pF
AI00825B
0.8VCC
0.2VCC
0.7VCC
0.3VCC
Input and output
timing reference levels
Input levels
DC and AC parameters M25PE20, M25PE10
50/64
Table 19. DC characteristics
Symbol Parameter Test condition (in addition to
those in Table 16)Min. Max. Unit
ILI Input Leakage current ± 2 µA
ILO Output Leakage current ± 2 µA
ICC1
Standby current
(Standby and Reset
modes)
S = VCC, VIN = VSS or VCC 50 µA
ICC2 Deep Power-down current S = VCC, VIN = VSS or VCC 10 µA
ICC3
Operating current
(FAST_READ)
C = 0.1VCC / 0.9.VCC at 20 MHz,
Q = open 6
mA
C = 0.1VCC / 0.9.VCC at 33 MHz,
Q = open 8
ICC4 Operating current (PW) S = VCC 15 mA
ICC5 Operating current (SE) S = VCC 15 mA
VIL Input Low voltage – 0.5 0.3VCC V
VIH Input High voltage 0.7VCC VCC+0.4 V
VOL Output Low voltage IOL = 1.6 mA 0.4 V
VOH Output High voltage IOH = –100 μAV
CC–0.2 V
Table 20. DC characteristics (T9HX (0.11 µm) process)
Symbol Parameter Test condition (in addition to
those in Table 16)Min. Max. Unit
ILI Input Leakage current ± 2 µA
ILO Output Leakage current ± 2 µA
ICC1
Standby current
(Standby and Reset
modes)
S = VCC, VIN = VSS or VCC 50 µA
ICC2
Deep Power-down
current S = VCC, VIN = VSS or VCC 10 µA
ICC3
Operating current
(FAST_READ)
C = 0.1VCC / 0.9.VCC at 33 MHz,
Q = open 4
mA
C = 0.1VCC / 0.9.VCC at 75 MHz,
Q = open 12
ICC4 Operating current (PW) S = VCC 15 mA
ICC5 Operating current (SE) S = VCC 15 mA
VIL Input Low voltage – 0.5 0.3VCC V
VIH Input High voltage 0.7VCC VCC+0.4 V
VOL Output Low voltage IOL = 1.6 mA 0.4 V
VOH Output High voltage IOH = –100 µA VCC–0.2 V
M25PE20, M25PE10 DC and AC parameters
51/64
Table 21. AC characteristics (25 MHz operation)
Test conditions specified in Table 16 and Table 17
Symbol Alt. Parameter Min. Typ. Max. Unit
fCfC
Clock frequency for the following
instructions: FAST_READ, PW, PP, PE,
SE, DP, RDP, WREN, WRDI, RDSR
D.C. 25 MHz
fRClock frequency for read instructions D.C. 20 MHz
tCH(1)
1. tCH + tCL must be greater than or equal to 1/ fC.
tCLH Clock High time 18 ns
tCL(1) tCLL Clock Low time 18 ns
Clock Slew rate(2)(peak to peak) 0.1 V/ns
tSLCH tCSS S Active Setup time (relative to C) 10 ns
tCHSL S Not Active Hold time (relative to C) 10 ns
tDVCH tDSU Data In Setup time 5 ns
tCHDX tDH Data In Hold time 5 ns
tCHSH S Active Hold time (relative to C) 10 ns
tSHCH S Not Active Setup time (relative to C) 10 ns
tSHSL tCSH S Deselect time 200 ns
tSHQZ(2)
2. Value guaranteed by characterization, not 100% tested in production.
tDIS Output Disable time 15 ns
tCLQV tVClock Low to Output Valid 15 ns
tCLQX tHO Output Hold time 0 ns
tTHSL Top Sector Lock Setup time 50 ns
tSHTL Top Sector Lock Hold time 100 ns
tDP(2) S to Deep Power-down 3 μs
tRDP(2) S High to Standby Power mode 30 μs
tPW(3)
3. When using PP and PW instructions to update consecutive bytes, optimized timings are obtained with one
sequence including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤ 256).
Page Write cycle time (256 bytes) 11
25 ms
Page Write cycle time (n bytes) 10.2 +
n*0.8/256
tPP(3)
Page Program cycle time (256 bytes) 1.2
5ms
Page Program cycle time (n bytes) 0.4 +
n*0.8/256
tPE Page Erase cycle time 10 20 ms
tSE Sector Erase cycle time 1 5 s
DC and AC parameters M25PE20, M25PE10
52/64
Table 22. AC characteristics (33 MHz operation)
33 MHz only available for products marked since week 40 of 2005(1).
Test conditions specified in Table 16 and Table 17
1. Details of how to find the date of marking are given in application note, AN1995.
Symbol Alt. Parameter Min. Typ. Max. Unit
fCfC
Clock frequency for the following
instructions: FAST_READ, PW, PP, PE,
SE, DP, RDP, WREN, WRDI, RDSR
D.C. 33 MHz
fRClock frequency for READ instructions D.C. 20 MHz
tCH(2)
2. tCH + tCL must be greater than or equal to 1/ fC.
tCLH Clock High time 13 ns
tCL(2) tCLL Clock Low time 13 ns
Clock Slew rate(3) (peak to peak)
3. Value guaranteed by characterization, not 100% tested in production.
0.1 V/ns
tSLCH tCSS S Active Setup time (relative to C) 10 ns
tCHSL S Not Active Hold time (relative to C) 10 ns
tDVCH tDSU Data In Setup time 3 ns
tCHDX tDH Data In Hold time 5 ns
tCHSH S Active Hold time (relative to C) 5 ns
tSHCH S Not Active Setup time (relative to C) 5 ns
tSHSL tCSH S Deselect time 200 ns
tSHQZ(3) tDIS Output Disable time 12 ns
tCLQV tVClock Low to Output Valid 12 ns
tCLQX tHO Output Hold time 0 ns
tTHSL Top Sector Lock Setup time 50 ns
tSHTL Top Sector Lock Hold time 100 ns
tDP(3) S to Deep Power-down 3 μs
tRDP(3) S High to Standby Power mode 30 μs
tPW(4)
4. When using PP and PW instructions to update consecutive bytes, optimized timings are obtained with one
sequence including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤ 256).
Page Write cycle time (256 bytes) 11
25 ms
Page Write cycle time (n bytes) 10.2+
n*0.8/256
tPP(4)
Page Program cycle time (256 bytes) 1.2
5ms
Page Program cycle time (n bytes) 0.4+
n*0.8/256
tPE Page Erase cycle time 10 20 ms
tSE Sector Erase cycle time 1 5 s
M25PE20, M25PE10 DC and AC parameters
53/64
Table 23. AC characteristics (50 MHz operation, T9HX (0.11 µm) process(1))(2)
Test conditions specified in Table 16 and Table 17
Symbol Alt. Parameter Min. Typ. Max. Unit
fCfC
Clock frequency for the following instructions:
FAST_READ, RDLR, PW, PP, WRLR, PE, SE,
SSE, DP, RDP, WREN, WRDI, RDSR, WRSR
D.C. 50 MHz
fRClock frequency for READ instructions D.C. 33 MHz
tCH(3) tCLH Clock High time 9 ns
tCL(3) tCLL Clock Low time 9 ns
Clock Slew Rate 2 (peak to peak) 0.1 V/ns
tSLCH tCSS S Active Setup time (relative to C) 5 ns
tCHSL S Not Active Hold time (relative to C) 5 ns
tDVCH tDSU Data In Setup time 2 ns
tCHDX tDH Data In Hold time 5 ns
tCHSH S Active Hold time (relative to C) 5 ns
tSHCH S Not Active Setup time (relative to C) 5 ns
tSHSL tCSH S Deselect time 100 ns
tSHQZ(4) tDIS Output Disable time 8 ns
tCLQV tVClock Low to Output Valid 8 ns
tCLQX tHO Output Hold time 0 ns
tWHSL(5) Write Protect Setup time 50 ns
tSHWL(5) Write Protect Hold time 100 ns
tDP(4) S to Deep Power-down 3 µs
tRDP(4) S High to Standby mode 30 µs
tWWrite Status Register cycle time 3 15 ms
tPW(6) Page Write cycle time (256 bytes) 11 23 ms
tPP(6) Page Program cycle time (256 bytes) 0.8 3ms
Page Program cycle time (n bytes) int(n/8) × 0.025(7)
tPE Page Erase cycle time 10 20 ms
tSE Sector Erase cycle time 1.5 5 s
tSSE SubSector Erase cycle time 80 150 ms
tBE Bulk Erase cycle time 4.5 10 s
1. See Important note on page 6.
2. Details of how to find the technology process in the marking are given in AN1995, see also Section 13: Ordering
information.
3. tCH + tCL must be greater than or equal to 1/ fC.
4. Value guaranteed by characterization, not 100% tested in production.
5. Only applicable as a constraint for a WRSR instruction when SRWD is set to ‘1’.
6. When using PP and PW instructions to update consecutive bytes, optimized timings are obtained with one sequence
including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤ 256).
7. int(A) corresponds to the upper integer part of A. E.g. int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
DC and AC parameters M25PE20, M25PE10
54/64
Table 24. AC characteristics (75 MHz operation, T9HX (0.11 µm) process(1))(2)
Test conditions specified in Table 16 and Table 17
Symbol Alt. Parameter Min. Typ. Max. Unit
fCfC
Clock frequency for the following instructions:
FAST_READ, RDLR, PW, PP, WRLR, PE, SE, SSE,
DP, RDP, WREN, WRDI, RDSR, WRSR
D.C. 75 MHz
fRClock frequency for READ instructions D.C. 33 MHz
tCH(3) tCLH Clock High time 6 ns
tCL(2) tCLL Clock Low time 6 ns
Clock Slew Rate 2 (peak to peak) 0.1 V/ns
tSLCH tCSS S Active Setup time (relative to C) 5 ns
tCHSL S Not Active Hold time (relative to C) 5 ns
tDVCH tDSU Data In Setup time 2 ns
tCHDX tDH Data In Hold time 5 ns
tCHSH S Active Hold time (relative to C) 5 ns
tSHCH S Not Active Setup time (relative to C) 5 ns
tSHSL tCSH S Deselect time 100 ns
tSHQZ(4) tDIS Output Disable time 8 ns
tCLQV tVClock Low to Output Valid under 30 pF/10 pF 8/6 ns
tCLQX tHO Output Hold time 0 ns
tWHSL(5) Write Protect Setup time 20 ns
tSHWL(4) Write Protect Hold time 100 ns
tDP(4) S to Deep Power-down 3 µs
tRDP(4) S High to Standby mode 30 µs
tWWrite Status Register cycle time 3 15 ms
tPW(6) Page Write cycle time (256 bytes) 11 23 ms
tPP(5)
Page Program cycle time (256 bytes) 0.8
3ms
Page Program cycle time (n bytes) int(n/8) ×
0.025(7)
tPE Page Erase cycle time 10 20 ms
tSE Sector Erase cycle time 1.5 5 s
tSSE SubSector Erase cycle time 80 150 ms
tBE Bulk Erase cycle time 4.5 10 s
1. See Important note on page 6.
2. Details of how to find the technology process in the marking are given in AN1995, see also Section 13: Ordering
information.
3. tCH + tCL must be greater than or equal to 1/ fC.
4. Value guaranteed by characterization, not 100% tested in production.
5. Only applicable as a constraint for a WRSR instruction when SRWD is set to ‘1’.
6. When using PP and PW instructions to update consecutive bytes, optimized timings are obtained with one sequence
including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤ 256).
7. int(A) corresponds to the upper integer part of A. E.g. int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
M25PE20, M25PE10 DC and AC parameters
55/64
Figure 27. Serial input timing
Figure 28. Top Sector Lock (T7X process) or Write Protect (T9HX process) setup and hold
timing
1. For the differences between devices produced in the two processes, see Important note on page 6.
C
D
AI01447C
S
MSB IN
Q
tDVCH
High Impedance
LSB IN
tSLCH
tCHDX
tCHCL
tCLCH
tSHCH
tSHSL
tCHSHtCHSL
C
D
S
Q
High Impedance
TSL
tTHSL tSHTL
AI3559
tWHSL tSHWL
W
or
DC and AC parameters M25PE20, M25PE10
56/64
Figure 29. Output timing
C
Q
AI01449e
S
LSB OUT
DADDR.LSB IN
tSHQZ
tCH
tCL
tQLQH
tQHQL
tCLQX
tCLQV
tCLQX
tCLQV
Table 25. Reset conditions
Test conditions specified in Ta bl e 1 6 and Ta bl e 1 7
Symbol Alt. Parameter Conditions Min. Typ. Max. Unit
tRLRH(1) tRST Reset Pulse width 10 µs
tSHRH
Chip Select High to Reset
High
Chip should have been deselected
before Reset is de-asserted 10 ns
1. Value guaranteed by characterization, not 100% tested in production.
Table 26. Timings after a Reset Low pulse(1)(2)
Test conditions specified in Ta b l e 1 6 and Ta bl e 1 7
Symbol Alt. Parameter Conditions:
Reset pulse occurred Max. Unit
tRHSL tREC
Reset recovery
time
While decoding an instruction(3): WREN, WRDI, RDID,
RDSR, READ, RDLR, Fast_Read, WRLR, PW, PP, PE,
SE, BE, SSE, DP, RDP
30 µs
Under completion of an Erase or Program cycle of a
PW, PP, PE, SE, BE operation 300 µs
Under completion of an Erase cycle of an SSE
operation 3ms
Under completion of a WRSR operation
tW (see
Ta b le 2 3 or
Tabl e 2 4 )
ms
Device deselected (S High) and in Standby mode 0 µs
1. All the values are guaranteed by characterization, and not 100% tested in production.
2. See Table 14 for a description of the device status after a Reset Low pulse.
3. S remains Low while Reset is Low.
M25PE20, M25PE10 DC and AC parameters
57/64
Figure 30. Reset AC waveforms
AI06808
Reset tRLRH
S
tRHSLtSHRH
Package mechanical M25PE20, M25PE10
58/64
12 Package mechanical
In order to meet environmental requirements, Numonyx offers these devices in ECOPACK®
packages. ECOPACK® packages are lead-free. The category of second level interconnect
is marked on the package and on the inner box label, in compliance with JEDEC Standard
JESD97. The maximum ratings related to soldering conditions are also marked on the inner
box label.
Figure 31. SO8N – 8 lead Plastic small outline, 150 mils body width, package outline
1. Drawing is not to scale.
SO-A
E1
8
ccc
b
e
A
D
c
1
E
h x 45˚
A2
k
0.25 mm
L
L1
A1
GAUGE PLANE
M25PE20, M25PE10 Package mechanical
59/64
Table 27. SO8N – 8 lead plastic small outline, 150 mils body width, package
mechanical data
Symbol
millimeters inches
Typ Min Max Typ Min Max
A1.750.069
A1 0.10 0.25 0.004 0.010
A2 1.25 0.049
b 0.28 0.48 0.011 0.019
c 0.17 0.23 0.007 0.009
ccc 0.10 0.004
D 4.90 4.80 5.00 0.193 0.189 0.197
E 6.00 5.80 6.20 0.236 0.228 0.244
E1 3.90 3.80 4.00 0.154 0.150 0.157
e1.27– –0.050– –
h 0.25 0.50 0.010 0.020
k 0°8° 0°8°
L 0.40 1.27 0.016 0.050
L1 1.04 0.041
Package mechanical M25PE20, M25PE10
60/64
Figure 32. VFQFPN8 (MLP8), 8-lead very thin fine pitch quad flat package no lead,
6 × 5 mm, package outline
1. Drawing is not to scale.
Table 28. VFQFPN8 (MLP8), 8-lead very thin fine pitch quad flat package no lead,
6 × 5 mm, package mechanical data
Symbol
millimeters inches
Typ Min Max Typ Min Max
A 0.85 0.80 1.00 0.033 0.031 0.039
A1 0.00 0.05 0.000 0.002
A2 0.65 0.026
A3 0.20 0.008
b 0.40 0.35 0.48 0.016 0.014 0.019
D6.00 0.236
D1 5.75 0.226
D2 3.40 3.20 3.60 0.134 0.126 0.142
E 5.00 0.197
E1 4.75 0.187
E2 4.00 3.80 4.30 0.157 0.150 0.169
e1.27– –0.050– –
R1 0.10 0.00 0.004 0.000
L 0.60 0.50 0.75 0.024 0.020 0.029
Θ12° 12°
aaa 0.15 0.006
bbb 0.10 0.004
ddd 0.05 0.002
D
E
70-ME
A2
AA3
A1
E1
D1
eE2
D2
L
b
θ
R1
ddd
bbb
C
CAB
aaa CAA
B
aaa CB
M
0.10 CA
0.10 CB
2x
M25PE20, M25PE10 Ordering information
61/64
13 Ordering information
Note: For a list of available options (speed, package, etc.), for further information on any aspect of
this device or when ordering parts operating at 75 MHz (0.11 µm, process digit ‘4’), please
contact your nearest Numonyx Sales Office.
Table 29. Ordering information scheme
Example: M25PE20 – V MN 6 T G
Device type
M25PE = Page-erasable serial Flash memory
Device function
10 = 1 Mbit (128 K x 8)
20 = 2 Mbit (256 K x 8)
Operating voltage
V = VCC = 2.7 V to 3.6 V
Package
MN = SO8N (150 mil width)
MP = VFQFPN8 6 × 5 mm (MLP8)(1)
1. Package only available for products in the T9HX process.
Device grade
6 = Industrial: device tested with standard test flow over –40 to 85 °C
Option
blank = Standard packing
T = Tape and reel packing
Plating technology
P or G = ECOPACK® (RoHS compliant)
Revision history M25PE20, M25PE10
62/64
14 Revision history
Table 30. Document revision history
Date Version Changes
07-Dec-2004 0.1 Document written
21-Dec-2004 0.2 Notes 1 and 2 removed from Table 29: Ordering information scheme.
S08N silhouette corrected on page 1.
6-Oct-2005 1.0
Added Table 22: AC characteristics (33 MHz operation). Document status
promoted to full Datasheet. An easy way to modify data, A fast way to
modify data, Page Write (PW) and Page Program (PP) sections updated
to explain optimal use of Page Write and Page Program instructions. Clock
slew rate changed from 0.03 to 0.1 V/ns. Updated Table 29: Ordering
information scheme. Added ECOPACK® information.
10-Jul-2006 2
Document converted to the new Numonyx template.
MLP package removed, SO8N package specifications updated (see
Section 12: Package mechanical).
Figure 5: SPI modes supported updated and Note 2 added. Timing line of
tSHQZ moved in Figure 29.
25-Jan-2007 3
50 MHz frequency added. VFQFPN package added (see Section 12:
Package mechanical).
The sectors are further divided up into subsectors (see Table 5: M25PE20
memory organization and Table 6: M25PE10 memory organization).
Important note on page 6 added. Figure 4: Bus master and memory
devices on the SPI bus updated and explanatory paragraph added. VCC
supply voltage and VSS ground added. Section 4.8: Protection modes
modified. Section 8: Reset added, Reset timings table split into Table 2 5 :
Reset conditions and Table 26: Timings after a Reset Low pulse.
At power-up the WIP bit is reset and the Lock Registers are reset (see
Section 7: Power-up and power-down).
VIO max changed in Table 15: Absolute maximum ratings.
M25PE20 and M25PE10 products processed in T9HX process added to
datasheet:
–WP
pin replaces TSL (T7X technology), see Section 2.7: Write Protect
(W) or Top Sector Lock (TSL)
–Read Lock Register (RDLR), Write to Lock Register (WRLR), Write
Status Register (WRSR), SubSector Erase (SSE) and Bulk Erase (BE)
instructions added for T9HX process
– subsector protection granularity removed in T9HX process, still exists in
T7X process
–Table 5: M25PE20 memory organization and Table 6: M25PE10
memory organization updated to show subsectors
– Status Register BP1, BP0 bits and SRWD bit added.
Small text changes.
M25PE20, M25PE10 Revision history
63/64
30-Jan-2008 4
Removed ‘low voltage’ from the title.
Updated the value for the maximum clock frequency (from 50 to 75 MHz)
through the document.
Added: Table 20: DC characteristics (T9HX (0.11 µm) process), Table 24:
AC characteristics (75 MHz operation, T9HX (0.11 µm) process) and
ECOPACK® text in Section 12: Package mechanical.
Modified: Table 22: AC characteristics (33 MHz operation), Figure 4: Bus
master and memory devices on the SPI bus, and Section 6.3: Read
Identification (RDID).
20-Mar-2008 5 Applied Numonyx branding.
Table 30. Document revision history (continued)
Date Version Changes
M25PE20, M25PE10
64/64
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