SFT1305 Ordering number : ENA0698 P-Channel Silicon MOSFET SFT1305 General-Purpose Switching Device Applications Features * * * Motor drive application. Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW10s) Symbol Conditions Ratings Unit VDSS VGSS --45 20 V ID --10 A IDP PW10s, duty cycle1% V --40 A 1.0 W Allowable Power Dissipation PD 15 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Tc=25C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) typ ID=--1mA, VGS=0V VDS=--45V, VGS=0V VGS=16V, VDS=0V --45 VDS=--10V, ID=--1mA --1.2 4.1 Unit max V --1 A 10 A --2.6 6.9 V yfs RDS(on)1 VDS=--10V, ID=--5A ID=--5A, VGS=--10V 60 80 m RDS(on)2 ID=--5A, VGS=--4V 105 147 m Marking : T1305 (c) 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 Ratings min S Continued on next page. www.onsemi.com Rev.0 I Page 1 of 4 I www.onsemi.com Publication Order Number: SFT1305/D SFT1305 Continued from preceding page. Symbol Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Total Gate Charge Qg Gate-to-Source Charge Qgs min pF pF VDS=--20V, f=1MHz See specified Test Circuit. 90 pF 11 ns See specified Test Circuit. 50 ns See specified Test Circuit. 80 ns See specified Test Circuit. 60 ns 20 nC 4 nC Gate-to-Drain "Miller" Charge Qgd VSD IS=--10A, VGS=0V 4 --1.0 Package Dimensions Package Dimensions unit : mm (typ) 7518-004 unit : mm(typ) 7003-004 5.5 0.5 1 2 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.3 2 3 0 to 0.2 0.6 0.5 3 2.5 0.8 1 7.5 0.8 1.6 0.85 0.6 1.2 2.3 2.3 SANYO : TP Switching Time Test Circuit VDD= --24V VIN ID= --5A RL=4.8 0V --10V VOUT D VIN PW=10s D.C.1% G P.G 0.5 1.5 1.5 7.0 5.5 4 1.2 50 V 2.3 6.5 5.0 0.5 nC --1.2 7.0 2.3 0.85 0.7 Unit 120 Diode Forward Voltage 4 max 1060 VDS=--24V, VGS=--10V, ID=--10A VDS=--24V, VGS=--10V, ID=--10A VDS=--24V, VGS=--10V, ID=--10A 6.5 5.0 typ VDS=--20V, f=1MHz VDS=--20V, f=1MHz td(off) tf Fall Time Ratings Conditions 1.2 Parameter SFT1305 S Rev.0 I Page 2 of 4 I www.onsemi.com 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA SFT1305 .0V --4 -- --6 --5 --3.0V --4 --3 --2 0 --0.6 --0.8 Drain-to-Source Voltage, VDS -- V 150 100 50 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V --9 = Ta 2 Source Current, IS -- A 3 5C --2 75 C 1.0 7 5 3 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 2 3 5 100 --4.0 --4.5 --5.0 IT12104 50 --40 --20 0 20 40 60 80 100 120 140 160 IT12106 IS -- VSD VGS=0V --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 Diode Forward Voltage, VSD -- V IT12107 --1.1 --1.2 IT12108 Ciss, Coss, Crss -- VDS 3 VDD= --24V VGS= --10V f=1MHz 2 3 Ciss, Coss, Crss -- pF 2 td(off) 100 7 tf 5 3 tr 2 td(on) Ciss 1000 7 5 3 2 Coss Crss 100 7 10 7 5 --0.1 --3.5 A = --5 V, I D 4 = VGS --5A ,I = --10V D = V GS --0.01 7 5 3 2 --0.001 --0.2 SW Time -- ID 7 150 5 3 2 C 25 --3.0 Case Temperature, Tc -- C 2 10 7 5 --2.5 200 IT12105 VDS= --10V 3 --2.0 RDS(on) -- Tc 0 --60 --10 yfs -- ID 5 --1.5 Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- m 200 --3 --1.0 250 Ta=25C ID= --5A 0 --2 --0.5 IT12103 RDS(on) -- VGS 250 Static Drain-to-Source On-State Resistance, RDS(on) -- m 0 --1.0 C --0.4 25 C --25 C --0.2 Ta= 75 0 Forward Transfer Admittance, yfs -- S Ta= 7 --3 0 Switching Time, SW Time -- ns --6 VGS= --2.5V --1 5 --9 25 --25C C --7 Drain Current, ID -- A 0.0 V --12 3.5V --1 Drain Current, ID -- A --8 Ta= --25 75 C C VDS= --10V .5V --4 5C 0V --6 . .0V --8 --9 ID -- VGS --15 25 C ID -- VDS --10 5 3 2 3 5 7 --1.0 2 3 5 Drain Current, ID -- A 7 --10 2 3 0 IT12109 Rev.0 I Page 3 of 4 I www.onsemi.com --5 --10 --15 --20 --25 --30 --35 Drain-to-Source Voltage, VDS -- V --40 --45 IT12110 SFT1305 VGS -- Qg --10 VDS= --24V ID= --10A --9 --8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --100 7 5 3 2 --7 --6 --5 --4 --3 --2 --1 0 0 2 4 6 8 10 12 14 16 Total Gate Charge, Qg -- nC 20 at --10 7 5 3 2 DC sin k 0.4 0.2 0 op 0 s era tio n --1.0 7 5 3 2 Operation in this area is limited by RDS(on). --0.1 7 5 3 2 Tc=25C Single pulse 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W he 1m s 1 10 0ms 0m s ID= --10A 5 7--100 IT12112 PD -- Tc 20 0.8 0.6 10 IT12111 1.0 No 10s IDP= --40A --0.01 --0.01 2 3 PD -- Ta 1.2 Allowable Power Dissipation, PD -- W 18 ASO 15 10 5 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C 160 0 20 IT12113 40 60 80 100 120 140 Case Temperature, Tc -- C 160 IT12114 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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