intersil Data Sheet 15A, 200V Ultrafast Diodes The MUR1520 and RURP1520 are ultrafast diodes (tr < 30ns) with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor. Formerly developmental type TA09926. Ordering Information PART NUMBER PACKAGE BRAND MUR1520 TO-220AC MUR1520 RURP 1520 TO-220AC RURP1520 NOTE: When ordering, use the entire part number. Symbol MUR1520, RURP1520 WET aaranee File Number 2779.4 Features * Ultrafast with Soft Recovery................... <30ns Operating Temperature....................... 175C * Reverse Voltage...........0.......0 00000000 200V * Avalanche Energy Rated * Planar Construction Applications * Switching Power Supply * Power Switching Circuits * General Purpose Packaging JEDEC TO-220AC ANODE CATHODE CATHODE (FLANGE) Absolute Maximum Ratings T = 25C, Unless Otherwise Specified Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Te = 157C) Repetitive Peak Surge Current (Square Wave 20kHz) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) Maximum Power Dissipation Avalanche Energy (See Figures 7 and 8) Operating and Storage Temperature Se ee eee eee eee nna IF(Av) 16 Cee eee nee eens VRRM 200 Vv Penn ee ee ee eee ee ee eee eee eee ene VRwWM 200 ne een ee nen teen eee tere e eben neee VR 200 Le en eee eee ee nee een een tenet eee leRM 30 A Lee eee ee ee eee eee e ee eee nes lFsm 200 A Lee eed bedded bbe bebe bet bi eeeeeenneeenes Pp 100 Ww MUR1520 RURP1520 UNITS Vv Vv A De eee ee ne eee ence ee eee eens Eave 20 mJ -55 to 175 1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 2000 MB 4302271 O104b70 725MUR1520, RURP1520 Electrical Specifications Tc = 25C, Unless Otherwise Specified SYMBOL TEST CONDITION MIN TYP MAX UNITS Ve Ip = 15A - - 1.05 Vv Ip = 15A, Tc = 150C - - 0.85 v Ir Vr = 200V - - 100 pA Vr = 200V, Te = 150C - - 500 pA tir Ip = 1A, dig/dt = 100A/ps - - 30 ns Ie = 15A, dip/dt = 100A/us - - 35 ns ta ip = 15A, die/dt = 100A/s - 20 - ns ty ip = 15A, dip/dt = 100A/us - 10 - ns Rouc - - 15 ociw DEFINITIONS Vr = Instantaneous forward voltage (pw = 3001s, D = 2%). IR = Instantaneous reverse current. tr = Reverse recovery time at dip/dt = 100A/us (See Figure 6), summation of tg + tp. tg = Time to reach peak reverse current at dip/dt = 100A/us (See Figure 6). tp = Time from peak Ipiy to projected zero crossing of IR1y based on a straight line from peak IRjy through 25% of IRn (See Figure 6). Reyc = Thermal resistance junction to case. pw = pulse width. D = duty cycle. Typical Performance Curves 100 10 lp, FORWARD CURRENT (A) Q 0.2 0.4 0.6 0.8 1.0 1.2 Vr, FORWARD VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE 400 ; 0.001 0 25C | 1 50 100 150 Vp, REVERSE VOLTAGE (V) Ip, REVERSE CURRENT (LA) S > S 200 FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE 2 intersil MH 4302271 O104b71 bbMUR1520, RURP1520 Typical Performance Curves (continued) 50 < ro Zz ut 40 Fe 3 ter Ps @ 30 g s || : = t 9 F 20 a Af - tt o to e 5 10 z z 0 a 1 40 20 140 150 160 170 180 Ig, FORWARD CURRENT (A) Tc, CASE TEMPERATURE (C) FIGURE 3. t,,, tg AND tp CURVES vs FORWARD CURRENT FIGURE 4. CURRENT DERATING CURVE Test Circuits and Waveforms Vor AMPLITUDE AND Rg CONTROL di-/dt (1 AND t2 CONTROL Ir DUT CURRENT dig Rg SENSE lr a 1 N ow. L oY Voce ! Land = Yop ret | T aoe! ty le _L FIGURE 5. t,, TEST CIRCUIT FIGURE 6. t,; WAVEFORMS AND DEFINITIONS I=1A L=40mH R<0.1Q Eavi = 12LI? (Ve(aviy/(VR(avi) ~ Yop) VavL Q, = IGBT (BVces > DUT Vriaviy) CURRENT FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design andlor specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 3 intersil M@@ 430027] O1L04b72 STO my