AON7292 100V N-Channel AlphaMOS General Description Product Summary * Latest Trench Power AlphaMOS (MOS MV) technology * Very Low RDS(ON) * Low Gate Charge * Optimized for fast-switching applications * RoHS and Halogen-Free Compliant Application VDS ID (at VGS=10V) 100V 23A RDS(ON) (at VGS=10V) < 24m RDS(ON) (at VGS=4.5V) < 32m 100% UIS Tested 100% Rg Tested * Synchronous rectification in DC/DC and AC/DC converters * Isolated DC/DC Converters in Telecom and Industrial DFN 3.3x3.3 Bottom View Top View D Top View Pin 1 1 8 2 7 3 6 4 5 G S Pin 1 Orderable Part Number Package Type Form Minimum Order Quantity AON7292 DFN 3.3x3.3 Tape & Reel 3000 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25C Continuous Drain Current Pulsed Drain Current C V A 45 9 IDSM TA=70C 20 15 IDM TA=25C Continuous Drain Current Units V 23 ID TC=100C C Maximum 100 A 7 IAS 14 A Avalanche energy L=0.1mH C EAS 10 mJ VDS Spike VSPIKE 120 V Avalanche Current Power Dissipation 10s TC=25C B PD TC=100C TA=25C Power Dissipation A Junction and Storage Temperature Range Rev.1.0: November 2013 4.1 Steady-State Steady-State W 2.6 TJ, TSTG Symbol t 10s W 11 PDSM TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 28 RJA RJC -55 to 150 Typ 25 50 3.7 www.aosmd.com C Max 30 60 4.5 Units C/W C/W C/W Page 1 of 6 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250A, VGS=0V 100 Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=20V Gate Threshold Voltage VDS=VGS, ID=250A 1 TJ=55C 1.6 100 nA 2.1 2.6 V 20 24 38 46 25.5 32 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=9A 32 VSD Diode Forward Voltage IS=1A,VGS=0V 0.72 IS Maximum Body-Diode Continuous Current TJ=125C VGS=4.5V, ID=7A DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance A 5 VGS=10V, ID=9A Coss Units V VDS=100V, VGS=0V IDSS Max VGS=0V, VDS=50V, f=1MHz m m S 1 V 23 A 1170 pF 90 pF 8 pF 0.65 1.0 SWITCHING PARAMETERS Total Gate Charge Qg(10V) 17 25 nC Qg(4.5V) Total Gate Charge 8 15 Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr f=1MHz VGS=10V, VDS=50V, ID=9A 0.3 nC 3 nC Gate Drain Charge 3.5 nC Turn-On DelayTime 5 ns VGS=10V, VDS=50V, RL=5.55, RGEN=3 3 ns 21 ns 3 ns IF=9A, dI/dt=500A/s 24 Body Diode Reverse Recovery Charge IF=9A, dI/dt=500A/s 110 ns nC Body Diode Reverse Recovery Time A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA t 10s and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150C. D. The RJA is the sum of the thermal impedance from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: November 2013 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 10V 4.5V VDS=5V 4V 30 30 ID(A) 40 ID (A) 40 3.5V 20 20 125C 10 10 VGS=3V 25C 0 0 0 1 2 3 4 1 5 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 35 2.4 Normalized On-Resistance 2.2 30 RDS(ON) (m ) VGS=4.5V 25 20 VGS=10V 15 VGS=10V ID=9A 2 1.8 1.6 1.4 VGS=4.5V ID=7A 1.2 1 0.8 10 0 5 10 15 0 20 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 60 1.0E+02 ID=9A 1.0E+01 50 40 IS (A) RDS(ON) (m ) 1.0E+00 125C 1.0E-01 125C 1.0E-02 30 1.0E-03 25C 20 1.0E-04 25C 10 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: November 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1500 VDS=50V ID=9A Ciss 1200 Capacitance (pF) VGS (Volts) 8 6 4 2 900 600 Coss 300 Crss 0 0 0 5 10 15 20 0 20 Qg (nC) Figure 7: Gate-Charge Characteristics 60 80 100 300 100.0 Power (W) 10s 100s 1ms 10ms 1.0 200 150 100 DC 0.1 TJ(Max)=150C TC=25C 250 10s RDS(ON) limited 10.0 ID (Amps) 40 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150C TC=25C 50 0 0.0 0.01 0.1 1 10 VDS (Volts) 100 1000 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Z JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJC=4.5C/W 1 0.1 PD Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: November 2013 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Power Dissipation (W) 30 30 Current rating ID(A) 20 10 0 20 10 0 0 25 50 75 100 125 150 0 TCASE ( C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE ( C) Figure 13: Current De-rating (Note F) 10000 TA=25C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Z JA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=60C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: November 2013 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.1.0: November 2013 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6