2SD1769 Silicon NPN Triple Diffused Planar Transistor Unit Conditions 120 V ICBO VCB=120V 10max A VCEO 120 V IEBO VEB=6V 20max mA 6 V V(BR)CEO 6(Pulse10) A hFE IC=10mA 120min VCE=2V, IC=3A 2000min 10.20.2 V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25C) W VBE(sat) IC=3A, IB=3mA 2.0max Tj 150 C fT VCE=12V, IE=-0.2A 100typ -55 to +150 C COB VCB=10V, f=1MHz typ V 0.65 +0.2 -0.1 IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (s) tstg (s) tf (s) 30 10 3 10 -1.5 3 -3 0.5typ 5.5typ 1.5typ I B =0.3mA 0 0 2 4 0 6 0.3 1 Collector-Emi tter Voltage V C E (V) 5 10 50 10000 5000 D C Cur r ent Gai n h FE DC Curr ent Gain h F E (V C E =2V) Typ 1000 500 0.5 1 5 1000 5C C 25 500 -3 12 0 C 100 50 30 0.03 0.05 0.1 10 Collector Current I C (A) 0.5 1 5 10 10 p) ) Temp 2 1 5 0.5 0.2 1 5 10 50 100 1000 5000 Time t(ms) Collector Current I C (A) f T - I E Characteristics (Typical) mp) Tem 1 j-a - t Characteristics h FE - I C Temperature Characteristics (Typical) 10000 0.1 0 Base-Emittor Voltage V B E (V) (V C E =2V) 80 0.03 0 100 Base Current I B (mA) h FE - I C Characteristics (Typical) 5000 2 (Case 4A 2A 1 4 -30C 2 I C =6 A se 0 .4 m A e Te 4 (Cas A A 0 .5 m 6 (Ca 0 .7 m 2 C A 1mA 125 1 .5 m 6 8 Collector Current I C (A) 3 (V CE =2V) 3 j - a (C /W) 5m I C - V BE Temperature Characteristics (Typical) Transient Thermal Resistance m 2mA mA 1.4 Weight : Approx 2.6g a. Type No. b. Lot No. V CE ( sa t ) - I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) A m 20 Collector Current I C (A) 10 A 2.5 B C E RL () A 1.35 2.5 VCC (V) 8 b pF Typical Switching Characteristics (Common Emitter) I C - V CE Characteristics (Typical) 2.00.1 o3.750.2 a V MHz 4.80.2 25C Tstg Unit 3.00.2 2SD1769 VCBO IC (2.5k)(200) E External Dimensions MT-25(TO220) (Ta=25C) 16.00.7 Symbol 8.80.2 Electrical Characteristics 2SD1769 VEBO B 4.0max Absolute maximum ratings (Ta=25C) C Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose 12.0min Darlington Symbol Equivalent circuit Safe Operating Area (Single Pulse) P c - T a Derating (V C E =12V) 20 120 50 Collector Curre nt I C ( A) Ma xim um Powe r Dissipation P C (W) 100 Collector-Emitter Voltage V C E (V) 200 nk 10 si 5 at 0.08 3 he 136 -8 30 ite Emitter Current I E (A) -5 fin -1 Without Heatsink Natural Cooling In -0.5 0.5 ith -0.05 1 40 W 0 s 50 C 500 D 5 s 1m s 3m ms 10 Cu t-of f Fr eque ncy f T (MH Z ) 10 Typ 100 50 20 10 2 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(C) 150