VS-32CTQ...S-M3, VS-32CTQ...-1-M3 Series www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A FEATURES * 150 C TJ operation * Low forward voltage drop * High frequency operation 2 * High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 1 1 3 D2PAK (TO-263AB) 2 TO-262AA 3 * Guard ring for enhanced ruggedness and long term reliability Base common cathode 2 Base common cathode 2 * Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C * Designed and qualified according to JEDEC(R)-JESD 47 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 1 Common 3 Anode cathode Anode 2 1 Common 3 Anode cathode Anode VS-32CTQ...S-M3 VS-32CTQ...-1-M3 DESCRIPTION PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VR 25 V, 30 V VF at IF 0.40 V IRM max. 97 mA at 125C TJ max. 150 C EAS 13 mJ Package D2PAK (TO-263AB), TO-262AA Circuit configuration Common cathode The VS-32CTQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Rectangular waveform VRRM IFSM tp = 5 s sine VF 15 Apk, TJ = 125 C TJ Range VALUES UNITS 30 A 25, 30 V 900 A 0.40 V -55 to +150 C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-32CTQ025S-M3 VS-32CTQ025-1-M3 VS-32CTQ030S-M3 VS-32CTQ030-1-M3 UNITS 25 30 V Revision: 27-Oct-17 Document Number: 94936 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-32CTQ...S-M3, VS-32CTQ...-1-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current See fig. 5 IF(AV) TEST CONDITIONS VALUES 50 % duty cycle at TC = 115 C, rectangular waveform 30 5 s sine or 3 s rect. pulse 900 UNITS Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 C, IAS = 1.20 A, L = 11.10 mH 13 mJ IAR Current decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = 1.5 x VR typical 3 A Repetitive avalanche current 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied A 250 ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 15 A Maximum forward voltage drop See fig. 1 VFM (1) TJ = 25 C 30 A 15 A TJ = 125 C 30 A Maximum reverse leakage current See fig. 2 IRM (1) Threshold voltage VF(TO) TJ = 25 C VR = Rated VR TJ = 125 C TJ = TJ maximum Forward slope resistance rt Maximum junction capacitance per leg CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 C Typical series inductance per leg LS Measured lead to lead 5 mm from package body Maximum voltage rate of change dV/dt Rated VR VALUES UNITS 0.49 0.58 0.40 V 0.53 1.75 97 mA 0.233 V 9.09 m 1300 pF 8.0 nH 10 000 V/s VALUES UNITS -55 to +150 C Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case per leg RthJC DC operation See fig. 4 3.25 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.50 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf cm (lbf in) Approximate weight Mounting torque C/W Case style D2PAK (TO-263AB) Marking device Case style TO-262AA 32CTQ025S 32CTQ030S 32CTQ025-1 32CTQ030-1 Revision: 27-Oct-17 Document Number: 94936 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-32CTQ...S-M3, VS-32CTQ...-1-M3 Series Vishay Semiconductors 1000 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com 100 10 TJ = 150 C TJ = 125 C TJ = 25 C TJ = 150 C 100 TJ = 125 C 10 TJ = 100 C 1 TJ = 75 C 0.1 TJ = 50 C TJ = 25 C 0.01 0.001 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.8 5 10 15 20 25 30 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 10 000 TJ = 25 C 1000 100 0 5 10 15 20 25 35 30 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM t1 0.1 t2 0.01 0.001 0.00001 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.0001 0.001 0.01 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 27-Oct-17 Document Number: 94936 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-32CTQ...S-M3, VS-32CTQ...-1-M3 Series Vishay Semiconductors 10 160 150 Average Power Loss (W) Allowable Case Temperature (C) www.vishay.com 140 DC 130 120 Square wave (D = 0.50) 80 % rated VR applied 110 100 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 8 RMS limit 6 DC 4 2 90 See note (1) 0 80 0 5 10 15 20 0 25 5 10 15 20 25 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (s) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP460 Rg = 25 Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 27-Oct-17 Document Number: 94936 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-32CTQ...S-M3, VS-32CTQ...-1-M3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 32 C T Q 030 S 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (30 A) 3 - Circuit configuration: C = common cathode 4 - T = TO-220 5 - Schottky "Q" series 6 - Voltage ratings 7 - TRL -M3 8 9 025 = 25 V 030 = 30 V S = D2PAK (TO-263AB) -1 = TO-262AA 8 - None = tube TRL = tape and reel (left oriented - for D2PAK (TO-263AB) only) TRR = tape and reel (right oriented - for D2PAK (TO-263AB) only) 9 - -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-32CTQ025S-M3 50 1000 Antistatic plastic tubes VS-32CTQ025STRR-M3 800 800 13" diameter reel VS-32CTQ025STRL-M3 800 800 13" diameter reel VS-32CTQ025-1-M3 50 1000 Antistatic plastic tubes VS-32CTQ030S-M3 50 1000 Antistatic plastic tubes VS-32CTQ030STRR-M3 800 800 13" diameter reel VS-32CTQ030STRL-M3 800 800 13" diameter reel VS-32CTQ030-1-M3 50 1000 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information D2PAK (TO-263AB) www.vishay.com/doc?96164 TO-262AA www.vishay.com/doc?96165 D2PAK (TO-263AB) www.vishay.com/doc?95444 TO-262AA www.vishay.com/doc?95443 www.vishay.com/doc?96424 Revision: 27-Oct-17 Document Number: 94936 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC(R) outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb 0.004 M B 0.010 M A M B Plating Base Metal (4) b1, b3 H 2x e Gauge plane c1 (4) (c) B 0 to 8 Seating plane L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail "A" Rotated 90 CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 4 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC(R) outline TO-263AB Revision: 08-Jul-15 Document Number: 95046 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-262 DIMENSIONS in millimeters and inches Modified JEDEC(R) outline TO-262 (Datum A) (2) (3) E A A c2 B E A (3) L1 Seating plane D 1 2 3 C L2 B D1 (3) B C L (2) A c 3 x b2 3xb E1 A1 (3) Section A - A 2xe Plating 0.010 M A M B (4) b1, b3 Base metal Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip SYMBOL c1 c (4) (b, b2) Section B - B and C - C Scale: None MILLIMETERS INCHES MIN. MAX. MIN. MAX. 0.190 NOTES A 4.06 4.83 0.160 A1 2.03 3.02 0.080 0.119 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 D1 6.86 8.00 0.270 0.315 3 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 e L 2.54 BSC 4 4 4 2 0.100 BSC 13.46 14.10 0.530 0.555 L1 - L2 3.36 1.65 - 0.065 3.71 0.132 0.146 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) (5) (6) 3 Dimension b1 and c1 apply to base metal only Controlling dimension: inches Outline conform to JEDEC TO-262 except A1 (maximum), b (minimum) , D1 (minimum) and L2 where dimensions derived the actual package outline Revision: 11-Jul-2019 Document Number: 95419 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000