For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIER - LOW NOISE - SMT
1
HMC717LP3 / 717LP3E
v05.1013
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
General Description
Features
Functional Diagram
The HMC717LP3(E) is a GaAs PHEMT MMIC
Low Noise Amplier that is ideal for xed wireless
and LTE/WiMAX/4G basestation front-end receivers
operating between 4.8 and 6.0 GHz. The amplier
has been optimized to provide 1.1 dB noise gure,
16.5 dB gain and +31.5 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC717LP3(E) can be biased with +3V to +5V and
features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application.
Noise Figure: 1.1 dB
Gain: 16.5 dB
Output IP3: +31.5 dBm
Single Supply: +3V to +5V
16 Lead 3x3mm QFN Package: 9 mm2
Typical Applications
The HMC717LP3(E) is ideal for:
• Fixed Wireless and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femtocells
• Public Safety Radio
• Access Points
Electrical Specications
TA = +25° C, Rbias = 2k Ohms for Vdd = 5V, Rbias = 20k Ohms for Vdd = 3V [1] [2]
Parameter Vdd = +3V Vdd = +5V Units
Min. Typ. Max. Min. Typ. Max.
Frequency Range 4.8 - 6.0 4.8 - 6.0 GHz
Gain 12 14.3 21 13.5 16.5 21 dB
Gain Variation Over Temperature 0.01 0.01 dB/ °C
Noise Figure 1.25 1.5 1.1 1.4 dB
Input Return Loss 13 13 dB
Output Return Loss 13 18 dB
Output Power for 1 dB Compression (P1dB) 12 14 15 18.5 dBm
Saturated Output Power (Psat) 15 19.5 dBm
Output Third Order Intercept (IP3) 25.5 27 [3] 31.5 dBm
Total Supply Current (Idd) 31 40 73 100 mA
[1] Rbias resistor sets current, see application circuit herein
[2] Vdd = Vdd1 = Vdd2
[3] Guaranteed by Design at 5GHz.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIER - LOW NOISE - SMT
2
HMC717LP3 / 717LP3E
v05.1013
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
Input Return Loss vs. Temperature [1]
Output Return Loss vs. Temperature [1]
Broadband Gain & Return Loss [1][2]
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
12345678910
Vdd=5V Vdd=3V
FREQUENCY (GHz)
RESPONSE (dB)
S11
S21
S22
-20
-15
-10
-5
0
4.5 4.9 5.3 5.7 6.1 6.5
+25C +85C -40C
FREQUENCY (GHz)
RETURN LOSS (dB)
-25
-20
-15
-10
-5
0
4.5 4.9 5.3 5.7 6.1 6.5
+25C +85C -40C
FREQUENCY (GHz)
RETURN LOSS (dB)
[1] Vdd = 5V, Rbias = 2kΩ [2] Vdd = 3V, Rbias = 20kΩ
Gain vs. Temperature [2]
5
9
13
17
21
25
4.5 4.9 5.3 5.7 6.1 6.5
+25C +85C -40C
FREQUENCY (GHz)
GAIN (dB)
Gain vs. Temperature [1]
5
9
13
17
21
25
4.5 4.9 5.3 5.7 6.1 6.5
+25C +85C -40C
FREQUENCY (GHz)
GAIN (dB)
Reverse Isolation vs. Temperature [1]
-50
-45
-40
-35
-30
-25
-20
4.5 4.9 5.3 5.7 6.1 6.5
+25C +85C -40C
FREQUENCY (GHz)
ISOLATION (dB)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIER - LOW NOISE - SMT
3
HMC717LP3 / 717LP3E
v05.1013
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
P1dB vs. Temperature [1] [2]
Psat vs. Temperature [1] [2]
8
10
12
14
16
18
20
22
24
4.5 4.9 5.3 5.7 6.1 6.5
+25C +85C -40C
FREQUENCY (GHz)
Psat (dBm)
Vdd=5V
Vdd=3V
8
10
12
14
16
18
20
22
24
4.5 4.9 5.3 5.7 6.1 6.5
+25C +85C -40C
FREQUENCY (GHz)
P1dB (dBm)
Vdd=5V
Vdd=3V
Output IP3 and Total Supply Current vs.
Supply Voltage @ 4800 MHz [3]
[1] Vdd = 5V, Rbias = 2k Ω [2] Vdd = 3V, Rbias = 20kΩ
[3] Rbias = 2kΩ for Vdd = 5V, Rbias = 20kΩ for Vdd = 3V
[4] Measurement reference plane shown on evaluation PCB drawing.
Output IP3 vs. Temperature [1] [2]
16
19
22
25
28
31
34
37
40
4.5 4.9 5.3 5.7 6.1 6.5
+25C +85C -40C
FREQUENCY (GHz)
IP3 (dBm)
Vdd=5V
Vdd=3V
20
22
24
26
28
30
32
20
35
50
65
80
95
110
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
IP3-3V
IP3-5V
Idd-3V
Idd-5V
IP3 (dBm)
Idd (mA)
Voltage Supply (V)
Noise Figure vs. Temperature [1] [2] [4]
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
4.5 4.9 5.3 5.7 6.1 6.5
Vdd=5V Vdd=3V
FREQUENCY (GHz)
NOISE FIGURE (dB)
+85C
+25C -40C
Output IP3 and Total Supply Current vs.
Supply Voltage @ 5900 MHz [3]
20
22
24
26
28
30
32
34
20
35
50
65
80
95
110
125
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
IP3-3V
IP3-5V
Idd-3V
Idd-5V
IP3 (dBm)
Idd (mA)
Voltage Supply (V)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIER - LOW NOISE - SMT
4
HMC717LP3 / 717LP3E
v05.1013
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
Power Compression @ 5900 MHz [1]
-10
-5
0
5
10
15
20
25
-20 -16 -12 -8 -4 0 4 8
Pout Gain PAE
INPUT POWER (dBm)
Pout (dBm), GAIN (dB), PAE (%)
-10
-5
0
5
10
15
20
25
-20 -15 -10 -5 0 5
Pout Gain PAE
INPUT POWER (dBm)
Pout (dBm), GAIN (dB), PAE (%)
Power Compression @ 5900 MHz [2]
Power Compression @ 4800 MHz [1]
-10
-5
0
5
10
15
20
25
-20 -15 -10 -5 0 5
Pout Gain PAE
INPUT POWER (dBm)
Pout (dBm), GAIN (dB), PAE (%)
-10
-5
0
5
10
15
20
25
-20 -17 -14 -11 -8 -5 -2 1 4
Pout Gain PAE
INPUT POWER (dBm)
Pout (dBm), GAIN (dB), PAE (%)
Power Compression @ 4800 MHz [2]
[1] Vdd = 5V, Rbias = 2k Ω [2] Vdd = 3V, Rbias = 20kΩ [3] Rbias = 2kΩ for Vdd = 5V, Rbias = 20kΩ for Vdd = 3V
Gain, Power & Noise Figure
vs. Supply Voltage @ 4800 MHz [3]
8
10
12
14
16
18
20
22
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
P1dB
Gain NF
Gain (dB) & P1dB (dBm)
NOISE FIGURE (dB)
Voltage Supply (V)
Gain, Power & Noise Figure
vs. Supply Voltage @ 5900 MHz [3]
10
12
14
16
18
20
22
1
1.1
1.2
1.3
1.4
1.5
1.6
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
P1dB
Gain NF
Gain (dB) & P1dB (dBm)
NOISE FIGURE (dB)
Voltage Supply (V)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIER - LOW NOISE - SMT
5
HMC717LP3 / 717LP3E
v05.1013
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
Output IP3 vs. Rbias @ 5900 MHz
20
23
26
29
32
35
100 1000 10000 100000
Vdd=3V Vdd=5V
Rbias (Ohms)
IP3 (dBm)
Gain, Noise Figure & Rbias @ 5900 MHz
Output IP3 vs. Rbias @ 4800 MHz
20
22
24
26
28
30
32
100 1000 10000 100000
Vdd=3V Vdd=5V
Rbias (Ohms)
IP3 (dBm)
Gain, Noise Figure & Rbias @ 4800 MHz
6
8
10
12
14
16
18
1.1
1.2
1.3
1.4
1.5
1.6
1.7
100 1000 10000 100000
Vdd=3V Vdd=5V
GAIN (dB)
NOISE FIGURE (dB)
Rbias (Ohms)
2
5
8
11
14
17
20
1
1.2
1.4
1.6
1.8
2
2.2
100 1000 10000 100000
Vdd=3V Vdd=5V
GAIN (dB)
NOISE FIGURE (dB)
Rbias (Ohms)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIER - LOW NOISE - SMT
6
HMC717LP3 / 717LP3E
v05.1013
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +5.5V
RF Input Power (RFIN)
(Vdd = +5 Vdc) +20 dBm
Channel Temperature 150 °C
Continuous Pdiss (T= 85 °C)
(derate 7.73 mW/°C above 85 °C) 0.5 W
Thermal Resistance
(channel to ground paddle) 129.5 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
ESD Sensitivity (HBM) Class 1A
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Vdd (V) Idd (mA)
2.7 23
3.0 31
3.3 39
4.5 60
5.0 73
5.5 85
Note: Amplier will operate over full voltage ranges shown above.
Typical Supply Current vs. Supply Voltage
(Rbias = 2kΩ for Vdd = 5V, Rbias = 20kΩ for Vdd = 3V)
Vdd (V) Rbias (Ohms) Idd (mA)
Min Max Recommended
3V 2k [1] Open Circuit
2k 20
4.7k 26
20k 31
5V 150 [2] Open Circuit
261 50
1k 65
2k 73
[1] With Vdd= 3V and Rbias < 2kΩ may result in the part becoming conditionally stable which is not recommended.
[2] With Vdd = 5V and Rbias<150Ω may result in the part becoming conditionally stable which is not recommended.
Absolute Bias Resistor
Range & Recommended Bias Resistor Values
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIER - LOW NOISE - SMT
7
HMC717LP3 / 717LP3E
v05.1013
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
Outline Drawing
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC717LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] 717
XXXX
HMC717LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 717
XXXX
[1] Max peak reow temperature of 235 °C
[2] Max peak reow temperature of 260 °C
[3] 4-Digit lot number XXXX
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE
MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR
SUGGESTED LAND PATTERN.
Package Information
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIER - LOW NOISE - SMT
8
HMC717LP3 / 717LP3E
v05.1013
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
Pin Number Function Description Interface Schematic
1, 3 - 7, 9, 10,
12, 14, 16 N/C No connection required. These pins may be connected
to RF/DC ground without affecting performance.
2 RFIN This pin is DC coupled
See the application circuit for off-chip component.
8 BIAS This pin is used to set the DC current of the amplier by
selection of the external bias resistor. See application circuit.
11 RFOUT This pin is AC coupled and matched to 50 Ohms
13, 15 Vdd2, Vdd1 Power supply voltage. Bypass capacitors are required.
See application circuit.
GND Package bottom must be connected to RF/DC ground
Pin Descriptions
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIER - LOW NOISE - SMT
9
HMC717LP3 / 717LP3E
v05.1013
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIER - LOW NOISE - SMT
10
HMC717LP3 / 717LP3E
v05.1013
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
Evaluation PCB
Item Description
J1, J2 PCB Mount SMA Connector
J3 - J5 DC Pins
C1 10 nF Capacitor, 0402 Pkg.
C2, C4 1000 pF Capacitor, 0603 Pkg.
C3, C5 100 pF Capacitor, 0603 Pkg.
C6 1.2 pF Capacitor, 0402 Pkg.
R1 2k Ohm Resistor, 0402 Pkg. (Rbias)
R2, R3 0 Ohm Resistor, 0402 Pkg.
U1 HMC717LP3(E) Amplier
PCB [2] 120586 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350.
List of Materials for Evaluation PCB 122416 [1]
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appro-
priate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
