HiPerFREDTM Epitaxial Diode
Features
●Planar passivated chips
●Very short recovery time
●Extremely low switching losses
●Low IRM-values
●Soft recovery behaviour
●Epoxy meets UL 94V-0
Applications
●Antiparallel diode for high frequency
switching devices
●Antisaturation diode
●Snubber diode
●Free wheeling diode in converters
and motor control circuits
●Rectifiers in switch mode power
supplies (SMPS)
●Inductive heating
●Uninterruptible power supplies (UPS)
●Ultrasonic cleaners and welders
Advantages
●Avalanche voltage rated for reliable
operation
●Soft reverse recovery for low EMI/RFI
●Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
IFAV = 30 A
VRRM = 1200 Vc
trr = 30 ns
VRRMcVRRM Type
V V
1200 600 DSEE30-12A
Symbol Conditions Maximum Ratings
IFRMS 60 A
IFAVM cTC = 90°C; rectangular, d = 0.5 30 A
IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 200 A
EAS TVJ = 25°C; non-repetitive 0.2 mJ
IAS = 1.3 A; L = 180 µH
IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.1 A
TVJ -55...+175 °C
TVJM 175 °C
Tstg -55...+150 °C
TL1.6 mm (0.063 in) from case for 10 s 260 °C
Ptot TC = 25°C 1 6 5 W
MdMounting Torque 0.9/6 Nm/ lb.in.
Weight typical 2 g
Symbol Conditions Characteristic Values
typ. max.
IR
cd TVJ = 25°C VR= VRRM 200 µA
TVJ = 150°C V R= VRRM 2mA
VF
eIF = 30 A; TVJ = 125°C 1.75 V
TVJ = 25°C 2.5 V
RthJC 0.9 K/W
RthCH 0.25 K/W
trr IF = 1 A; -di/dt = 200 A/µs; 30 ns
VR = 30 V
IRM VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs 4 A
TVJ = 100°C
DS98962 (10/02)
© 2002 IXYS All rights reserved
DSEE30-12A
ADVANCE TECHNICAL INFORMATION
1 2 3
Notes: Data given for TVJ = 25OC and per diode unless otherwise specified
c Diodes connected in series
d Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
e Pulse test: pulse Width = 300 µs, Duty Cycle < 2.0 %
IXYS reserves the right to change limits, test conditions and dimensions.
123
Notes
●Please see DSEP 30-06A Data Sheet
for characteristic curves.
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