MMBF5484LT1 Preferred Device JFET Transistor N-Channel Features * Pb-Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating 2 SOURCE Symbol Value Unit VDG 25 Vdc VGS(r) 25 Vdc Forward Gate Current IG(f) 10 mAdc Continuous Device Dissipation at or Below TC = 25C Linear Derating Factor PD 200 2.8 mW mW/C Storage Channel Temperature Range Tstg -65 to +150 C Drain-Gate Voltage Reverse Gate-Source Voltage 3 GATE 1 DRAIN 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol Max Unit 225 1.8 mW mW/C RqJA 556 C/W TJ, Tstg -55 to +150 C SOT-23 (TO-236) CASE 318 STYLE 10 1 2 PD MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR-5 = 1.0 x 0.75 x 0.062 in. M6B M G G 1 M6B = Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBF5484LT1 SOT-23 3,000 / Tape & Reel MMBF5484LT1G SOT-23 3,000 / Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2006 February, 2006 - Rev. 3 1 Publication Order Number: MMBF5484LT1/D MMBF5484LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)GSS -25 - Vdc IGSS - - -1.0 -0.2 nAdc mAdc VGS(off) -0.3 -3.0 Vdc IDSS 1.0 5.0 mAdc Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |Yfs| 3000 6000 mmhos Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |yos| - 50 mmhos Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss - 5.0 pF Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 10 MHz) Crss - 1.0 pF Output Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Coss - 2.0 pF OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = -1.0 mAdc, VDS = 0) Gate Reverse Current (VGS = - 20 Vdc, VDS = 0) (VGS = - 20 Vdc, VDS = 0, TA = 100C) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (VDS = 15 Vdc, VGS = 0) SMALL- SIGNAL CHARACTERISTICS COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25C) grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos) 30 20 bis @ IDSS 10 7.0 5.0 3.0 gis @ IDSS 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 bis @ 0.25 IDSS 0.3 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 5.0 3.0 2.0 brs @ IDSS 1.0 0.7 0.5 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 grs @ IDSS, 0.25 IDSS 10 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 2. Reverse Transfer Admittance (yrs) 20 10 10 7.0 5.0 gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos) gfs, FORWARD TRANSCONDUCTANCE (mmhos) |b fs|, FORWARD SUSCEPTANCE (mmhos) Figure 1. Input Admittance (yis) 20 gfs @ IDSS gfs @ 0.25 IDSS 3.0 2.0 1.0 0.7 0.5 |bfs| @ IDSS |bfs| @ 0.25 IDSS 5.0 bos @ IDSS and 0.25 IDSS 2.0 1.0 0.5 0.2 gos @ IDSS 0.1 0.05 gos @ 0.25 IDSS 0.02 0.3 0.2 0.01 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 Figure 3. Forward Transadmittance (yfs) 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 4. Output Admittance (yos) http://onsemi.com 2 MMBF5484LT1 COMMON SOURCE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) 30 20 10 0 1.0 40 350 340 330 320 40 310 50 20 10 320 310 ID = IDSS, 0.25 IDSS 900 500 ID = IDSS 800 60 300 400 500 0.7 600 300 0.1 500 70 290 0.2 700 600 600 80 330 0.4 300 70 340 0.3 400 50 0.8 350 300 200 60 0 200 100 0.9 30 ID = 0.25 IDSS 100 290 400 700 280 80 270 90 100 260 100 260 110 250 110 250 120 240 120 240 130 230 130 230 140 220 140 220 0.6 800 90 900 900 150 160 170 180 800 700 190 200 210 300 200 20 10 0 350 150 160 170 340 330 30 20 10 80 90 700 110 0.4 800 600 100 210 0 350 340 330 100 200 I = 0.25 IDSS D 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8 310 50 300 60 290 70 280 80 270 90 270 260 100 260 250 110 250 240 120 240 230 130 230 220 140 220 320 310 300 0.7 290 900 700 600 200 40 0.5 60 900 190 320 0.6 50 800 180 Figure 6. S12s 40 70 270 100 Figure 5. S11s 30 280 0.0 500 0.3 ID = 0.25 IDSS 500 0.3 100 400 400 280 0.6 300 200 0.4 100 0.5 300 120 ID = IDSS 200 130 0.6 140 150 160 170 180 190 200 210 150 Figure 7. S21s 160 170 180 190 Figure 8. S22s http://onsemi.com 3 200 210 MMBF5484LT1 COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) (VDG = 15 Vdc, Tchannel = 25C) gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 20 10 7.0 5.0 gig @ IDSS 3.0 grg @ 0.25 IDSS 2.0 1.0 0.7 0.5 big @ IDSS big @ 0.25 IDSS 0.3 0.2 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 0.5 0.3 0.1 0.07 0.05 0.25 IDSS 0.03 0.02 0.01 0.007 0.005 500 700 1000 brg @ IDSS 0.2 gig @ IDSS, 0.25 IDSS 10 10 7.0 5.0 gfg @ IDSS 3.0 gfg @ 0.25 IDSS 2.0 1.0 0.7 0.5 bfg @ IDSS 0.3 brg @ 0.25 IDSS 0.2 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 10. Reverse Transfer Admittance (yrg) gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos) gfg , FORWARD TRANSCONDUCTANCE (mmhos) bfg , FORWARD SUSCEPTANCE (mmhos) Figure 9. Input Admittance (yig) 20 1.0 0.7 0.5 bog @ IDSS, 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 gog @ IDSS 0.03 0.02 gog @ 0.25 IDSS 0.1 0.01 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 Figure 11. Forward Transfer Admittance (yfg) 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 12. Output Admittance (yog) http://onsemi.com 4 MMBF5484LT1 COMMON GATE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) 30 20 10 0 350 340 330 30 0.7 40 100 310 50 300 60 290 70 280 80 0 350 340 330 0.04 200 300 320 0.03 400 100 500 200 0.5 ID = IDSS 0.4 310 600 300 60 70 40 10 ID = 0.25 IDSS 0.6 50 320 20 0.02 700 400 500 300 800 600 900 0.01 290 700 80 800 0.3 900 90 90 270 100 ID = IDSS 110 110 250 270 500 600 100 260 280 0.0 100 700 600 700 260 ID = 0.25 IDSS 250 0.01 800 120 120 240 240 800 0.02 900 130 130 230 230 900 140 140 220 150 160 170 180 190 200 210 20 10 0 350 150 160 170 340 330 30 20 10 40 320 190 0 1.5 1.0 350 300 200 210 340 330 500 200 100 700 600 800 0.9 ID = IDSS 320 400 100 0.4 50 180 Figure 14. S12g 0.5 40 220 0.04 Figure 13. S11g 30 0.03 900 310 50 300 60 290 70 280 80 270 90 270 100 260 100 260 110 250 110 250 120 240 120 240 130 230 130 230 140 220 140 220 100 ID = IDSS, 0.25 IDSS 0.3 0.8 60 0.2 70 310 ID = 0.25 IDSS 80 0.1 900 90 300 0.7 290 280 0.6 900 150 160 170 180 190 200 210 150 Figure 15. S21g 160 170 180 190 Figure 16. S22g http://onsemi.com 5 200 210 MMBF5484LT1 PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. D SEE VIEW C 3 HE E c 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com http://onsemi.com 6 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MMBF5484LT1/D