Type
BSS131
SIPMOS® Small-Signal-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic level
• dv/dt rated
• Pb-free lead-plating; RoHS compliant
• Qualified according to AEC Q101
Parameter Symbol Conditions Unit
Continuous drain current IDTA=25 °C 0.11 A
TA=70 °C 0.09
Pulsed drain current ID,pulse TA=25 °C 0.4
Reverse diode dv/dtdv/dtID=0.1 A, VDS=192 V,
di/dt=200 A/µs,
Tj,max=150 °C
6 kV/µs
Gate source voltage VGS ±20 V
ESD sensitivity (HBM) as per
MIL-STD 883 Class 1a
Power dissipation Ptot TA=25 °C 0.36 W
Operating and storage temperature Tj, Tstg -55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Value
VDS 240 V
RDS(on),max 14 Ω
ID0.1 A
Product Summary
PG-SOT-23
Type Package Pb-free Tape and Reel Information Marking
BSS131 PG-SOT23 Yes L6327 SRs
Rev. 2.4 page 1 2011-06-07
BSS131
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - minimal footprint RthJA - - 350 K/W
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=250 µA 240 - - V
Gate threshold voltage VGS(th) VDS=0 V, ID=56 µA 0.8 1.4 1.8
Drain-source leakage current ID (off) VDS=240 V, VGS=0 V,
Tj=25 °C - - 0.01 µA
VDS=240 V, VGS=0 V,
Tj=150 °C --5
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - - 10 nA
Drain-source on-state resistance RDS(on) VGS=4.5 V, ID=0.09 A - 9.07 20 Ω
VGS=10 V, ID=0.1 A - 7.7 14
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=0.08 A 0.06 0.13 - S
Values
Rev. 2.4 page 2 2011-06-07
BSS131
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss -5877pF
Output capacitance Coss - 7.3 10
Reverse transfer capacitance Crss - 2.8 4.2
Turn-on delay time td(on) - 3.3 5.0 ns
Rise time tr- 3.1 4.6
Turn-off delay time td(off) - 13.7 20
Fall time tf- 64.5 97
Gate Charge Characteristics
Gate to source charge Qgs - 0.16 0.22 nC
Gate to drain charge Qgd - 0.8 1.2
Gate charge total Qg- 2.1 3.1
Gate plateau voltage Vplateau - 2.90 - V
Reverse Diode
Diode continous forward current IS- - 0.11 A
Diode pulse current IS,pulse - - 0.43
Diode forward voltage VSD VGS=0 V, IF=0.1 A,
Tj=25 °C - 0.81 1.2 V
Reverse recovery time trr - 42.9 64.3 ns
Reverse recovery charge Qrr - 22.6 34 nC
VR=120 V, IF=0.1 A,
diF/dt=100 A/µs
TA=25 °C
Values
VGS=0 V, VDS=25 V,
f=1 MHz
VDD=120 V,
VGS=10 V, ID=0.1 A,
RG=6 Ω
VDD=192 V, ID=0.1 A,
VGS=0 to 10 V
Rev. 2.4 page 3 2011-06-07
BSS131
1 Power dissipation 2 Drain current
Ptot=f(TA)ID=f(TA); VGS≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C; D=0 ZthJA=f(tp)
parameter: tpparameter: D=tp/T
100 ms
30 µs
100 µs
1 ms
10 ms
DC
100
10-1
10-2
10-3
1 10 100 1000
VDS [V]
ID [A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
101
100
10-1
10-2
10-3
10-4
10-5
103
102
101
100
tp [s]
ZthJA [K/W]
0
0.1
0.2
0.3
0.4
0 40 80 120 160
TA [°C]
Ptot [W]
0
0.02
0.04
0.06
0.08
0.1
0.12
0 40 80 120 160
TA [°C]
ID [A]
Rev. 2.4 page 4 2011-06-07
BSS131
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
2.3 V 2.7 V 3.3 V 3.9 V
4.5 V
5 V
7 V
10 V
5
7
9
11
13
15
17
19
21
23
25
0 0.1 0.2 0.3 0.4
ID [A]
RDS(on) [Ω]
0
0.1
0.2
0.3
0.4
01234
VGS [V]
ID [A]
0
0.05
0.1
0.15
0.2
0.25
0.3
0.0 0.1 0.2 0.3 0.4
ID [A]
gfs [S]
V 2.3
V 2.7
V 3.3
V 3.9
4.5 V
V 5
V 7
V 10
0
0.1
0.2
0.3
0.4
01234567
VDS [V]
ID [A]
Rev. 2.4 page 5 2011-06-07
BSS131
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=0.1 A; VGS=10 V VGS(th)=f(Tj); VDS=VGS; ID=56 µA
parameter: ID
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz; Tj=25°C IF=f(VSD)
parameter: Tj
typ
%98
0
10
20
30
40
50
-60 -20 20 60 100 140
Tj [°C]
RDS(on) [Ω]
typ
%98
%2
0
0.4
0.8
1.2
1.6
2
2.4
-60 -20 20 60 100 140
Tj [°C]
VGS(th) [V]
Ciss
Coss
Crss
103
102
101
100
0102030
VDS [V]
C [pF]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
100
10-1
10-2
10-3
0 0.4 0.8 1.2 1.6 2 2.4 2.8
VSD [V]
IF [A]
Rev. 2.4 page 6 2011-06-07
BSS131
13 Typ. gate charge 14 Drain-source breakdown voltage
VGS=f(Qgate); ID=0.1 A pulsed VBR(DSS)=f(Tj); ID=250 µA
parameter: VDD
200
210
220
230
240
250
260
270
280
290
300
-60 -20 20 60 100 140
Tj [°C]
VBR(DSS) [V]
48 V
120V
192 V
0
2
4
6
8
10
12
0 0.5 1 1.5 2 2.5
Qgate [nC]
VGS [V]
Rev. 2.4 page 7 2011-06-07
BSS131
Package Outline:
Footprint: Packaging:
Rev. 2.4 page 8 2011-06-07
BSS131
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Bereich Kommunikation
St.-Martin-Straße 53
D-81541 München
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For information on the types in question, please contact your nearest Infineon Technologies office.
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Rev. 2.4 page 9 2011-06-07
