Up to 6 GHz Low Noise
Silicon Bipolar Transistor
Technical Data
Features
• Low Noise Figure:
1.6 dB Typical at 2.0 GHz
3.0 dB Typical at 4.0 GHz
• High Associated Gain:
14.0 dB Typical at 2.0 GHz
10.0 dB Typical at 4.0 GHz
• High Gain-Bandwidth
Product: 8.0 GHz Typical fT
• Hermetic, Gold-ceramic
Microstrip Package
AT-41410
100 mil Package
Description
Agilent’s AT-41410 is a general
purpose NPN bipolar transistor
that offers excellent high fre-
quency performance. The AT-
41410 is housed in a hermetic, high
reliability 100 mil ceramic pack-
age. The 4 micron emitter-to-
emitter pitch enables this transis-
tor to be used in many different
functions. The 14 emitter finger
interdigitated geometry yields an
intermediate sized transistor with
impedances that are easy to match
for low noise and moderate power
applications. This device is de-
signed for use in low noise,
wideband amplifier, mixer and
oscillator applications in the VHF,
UHF, and microwave frequencies.
An optimum noise match near 50 Ω
at 1 GHz , makes this device easy
to use as a low noise amplifier.
The AT-41410 bipolar transistor is
fabricated using Agilent’s 10 GHz
f
T
Self-Aligned-Transistor (SAT)
process. The die is nitride passi-
vated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
2
AT-41410 Absolute Maximum Ratings Absolute
Symbol Parameter Units Maximum[1]
VEBO Emitter-Base Voltage V 1.5
VCBO Collector-Base Voltage V 20
VCEO Collector-Emitter Voltage V 12
ICCollector Current mA 60
PTPower Dissipation[2,3] mW 500
TjJunction Temperature °C 200
TSTG Storage Temperature °C -65 to 200
Thermal Resistance[2,4]:
θjc = 170°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 5.9 mW/°C for TC > 115°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Electrical Specifications, TA = 25°C
Symbol Parameters and Test Conditions Units Min. Typ. Max.
|S21E|2Insertion Power Gain; VCE = 8 V, IC = 25 mA f = 2.0 GHz dB 12.0
f = 4.0 GHz 6.5
P1 dB Power Output @ 1 dB Gain Compression f = 2.0 GHz dBm 19.0
VCE = 8 V, IC = 25 mA f= 4.0 GHz 18.5
G1 dB 1 dB Compressed Gain; VCE = 8 V, IC = 25 mA f = 2.0 GHz dB 14.0
f = 4.0 GHz 9.5
NFOOptimum Noise Figure: VCE = 8 V, IC = 10 mA f = 1.0 GHz dB 1.3
f = 2.0 GHz 1.6 1.9
f = 4.0 GHz 3.0
GAGain @ NFO; VCE = 8 V, IC = 10 mA f = 1.0 GHz dB 18.5
f = 2.0 GHz 13.0 14.0
f = 4.0 GHz 10.0
fTGain Bandwidth Product: VCE = 8 V, IC = 25 mA GHz 8.0
hFE Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA — 30 150 270
ICBO Collector Cutoff Current; VCB = 8 V µA 0.2
IEBO Emitter Cutoff Current; VEB = 1 V µA 1.0
CCB Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz pF 0.2
Notes:
1. For this test, the emitter is grounded.
3
AT-41410 Typical Performance, TA = 25°C
FREQUENCY (GHz)
Figure 1. Noise Figure and Associated
Gain vs. Frequency.
VCE = 8 V, IC = 10 mA.
GAIN (dB)
IC (mA)
Figure 3. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Collector Voltage. f = 2.0 GHz.
GAIN (dB)
0 10203040
Figure 4. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Frequency. VCE = 8 V.
10 V
4 V
FREQUENCY (GHz)
Figure 5. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VCE = 8 V, IC = 25 mA.
GAIN (dB)
0.1 0.50.3 1.0 3.0 6.0
IC (mA)
GAIN (dB)
IC (mA)
Figure 2. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Frequency. VCE = 8 V.
24
20
16
12
8
4
G1 dB (dB) P1 dB (dBm)
0 10203040
P1dB
G1dB
24
21
18
15
12
9
6
3
0
8
6
4
2
0
NF (dB)
4
3
2
1
NFO (dB)
0.5 2.01.0 3.0 4.0 5.0
16
15
14
13
12
GA
GA
NFO
NFO
GA
NFO
NF50 Ω
6 V
0 10203040
2.0 GHz
2.0 GHz
4.0 GHz
4.0 GHz
6
4
2
0
NFO (dB)
16
14
12
10
8
2.0 GHz
2.0 GHz
4.0 GHz
4.0 GHz
IC (mA)
Figure 6. Insertion Power Gain vs.
Collector Current and Frequency.
VCE = 8 V.
20
16
11
8
4
0
|S21E|2 GAIN (dB)
0 10203040
1.0 GHz
2.0 GHz
4.0 GHz
40
35
30
25
20
15
10
5
0
MSG
MAG
|S21E|2
10 V
4 V
6 V
4
AT-41410 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA= 25°C, VCE =8 V, I
C= 10 mA
Freq. S11 S21 S12 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.1 .61 -40 27.7 24.38 159 -40.0 .010 75 .94 -13
0.5 .60 -127 22.2 12.83 110 -30.4 .030 40 .62 -33
1.0 .60 -163 17.1 7.12 86 -28.2 .039 35 .50 -38
1.5 .60 179 13.8 4.89 71 -27.5 .042 45 .46 -42
2.0 .61 165 11.4 3.72 59 -26.0 .050 42 .45 -48
2.5 .61 157 9.7 3.04 52 -24.7 .058 46 .44 -52
3.0 .62 149 8.2 2.56 42 -23.9 .064 50 .44 -58
3.5 .63 140 7.0 2.23 31 -22.3 .077 48 .46 -68
4.0 .62 130 5.9 1.96 20 -21.3 .086 44 .48 -78
4.5 .61 120 4.9 1.76 10 -20.4 .095 41 .50 -85
5.0 .61 106 4.0 1.59 -1 -18.9 .113 38 .52 -91
5.5 .62 94 3.2 1.45 -11 -18.3 .121 33 .52 -97
6.0 .66 82 2.4 1.31 -22 -17.5 .133 30 .51 -105
AT-41410 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA= 25°C, VCE =8 V, I
C= 25 mA
Freq. S11 S21 S12 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.1 .45 -69 31.4 37.17 150 -39.2 .011 64 .87 -18
0.5 .58 -153 23.3 14.63 101 -33.6 .021 43 .49 -33
1.0 .59 -178 17.7 7.68 81 -30.4 .030 53 .43 -35
1.5 .60 169 14.3 5.21 68 -28.2 .039 58 .41 -40
2.0 .60 157 11.9 3.94 56 -25.8 .051 55 .41 -45
2.5 .61 151 10.1 3.20 50 -24.4 .060 55 .40 -49
3.0 .62 144 8.6 2.70 40 -23.1 .070 58 .40 -56
3.5 .63 135 7.4 2.35 30 -21.9 .080 54 .42 -66
4.0 .62 126 6.3 2.07 19 -20.5 .094 53 .44 -76
4.5 .61 116 5.3 1.85 9 -19.3 .108 45 .46 -84
5.0 .61 103 4.5 1.67 -2 -18.5 .119 41 .49 -90
5.5 .63 91 3.6 1.52 -12 -17.6 .131 34 .49 -96
6.0 .67 80 2.8 1.37 -22 -16.8 .144 29 .47 -104
A model for this device is available in the DEVICE MODELS section.
AT-41410 Noise Parameters: VCE = 8 V, IC = 10 mA
Freq. NFOΓopt
GHz dB Mag Ang RN/50
0.1 1.2 .12 4 0.17
0.5 1.2 .10 23 0.17
1.0 1.3 .06 49 0.16
2.0 1.6 .26 172 0.16
4.0 3.0 .46 -133 0.26
5
13
4
2
EMITTER
EMITTER
COLLECTOR
BASE
.020
.508
.100
2.54
.495 ± .030
12.57 ± .76
Notes:
(unless otherwise specified)
1. Dimensions are in
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
mm
.040
1.02
.030
.76
.004 ± .002
.10 ± .05
100 mil Package Dimensions
www.semiconductor.agilent.com
Data subject to change.
Copyright © 1999 Agilent Technologies
5965-8923E (11/99)
