AUTOMOTIVE GRADE Features Advanced Planar Technology Low On-Resistance Logic Level Gate Drive Dual P Channel MOSFET Surface Mount Available in Tape & Reel 150C Operating Temperature Lead-Free, RoHS Compliant Automotive Qualified * AUIRF7316Q S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Package Type AUIRF7316Q SO-8 -30V RDS(on) typ. max. ID Top View Description Specifically designed for Automotive applications, these HEXFET(R) Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. Base part number VDSS 0.042 0.058 -4.9A SO-8 AUIRF7316Q G Gate Standard Pack Form Quantity Tape and Reel 4000 D Drain S Source Orderable Part Number AUIRF7316QTR Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Max. Units VDS Symbol Drain-Source Voltage Parameter -30 V ID @ TA = 25C Continuous Drain Current, VGS @ 10V -4.9 ID @ TA = 70C IDM IS Continuous Drain Current, VGS @ 10V Pulsed Drain Current Continuous Source Current (Diode Conduction) -3.9 -30 -2.5 PD @TA = 25C Maximum Power Dissipation 2.0 PD @TA = 70C VGS EAS IAR EAR dv/dt TJ TSTG Maximum Power Dissipation Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Thermal Resistance Symbol RJA Parameter Junction-to-Ambient A 1.3 20 140 -2.8 0.20 -5.0 -55 to + 150 W V mJ A mJ V/ns C Typ. Max. Units --- 62.5 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-9-30 AUIRF7316Q Static @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions -30 --- --- V VGS = 0V, ID = -250A --- 0.022 --- V/C Reference to 25C, ID = -1mA --- 0.042 0.058 VGS = -10V, ID = -4.9A --- 0.076 0.098 VGS = -4.5V, ID = -3.6A -1.0 --- -3.0 V VDS = VGS, ID = -250A --- 7.7 --- S VDS = -15V, ID = -4.9A --- --- -1.0 VDS = -24V, VGS = 0V A --- --- -25 VDS = -24V,VGS = 0V,TJ =55C --- --- -100 VGS = -20V nA --- --- 100 VGS = 20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Total Gate Charge Qg Qgs Gate-to-Source Charge Qgd Gate-to-Drain Charge td(on) Turn-On Delay Time Rise Time tr td(off) Turn-Off Delay Time Fall Time tf Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage Reverse Recovery Time trr Qrr Reverse Recovery Charge --- --- --- --- --- --- --- --- --- --- 23 3.8 5.9 13 13 34 32 710 380 180 34 5.7 8.9 19 20 51 48 --- --- --- Min. Typ. Max. Units --- --- -2.5 --- --- -30 --- --- --- -0.78 44 42 -1.0 66 63 ID = -4.9A nC VDS = -15V VGS = -10V, See Fig.10 VDD = -15V ID = -1.0A ns RG = 6.0 RD = 15 VGS = 0V pF VDS = -25V = 1.0MHz, See Fig.5 Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = -1.7A,VGS = 0V ns TJ = 25C ,IF = -1.7A, nC di/dt = 100A/s Notes: Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) Starting TJ = 25C, L = 35mH, RG = 25, IAS = -2.8A. ISD -2.8A, di/dt 150A/s, VDD V(BR)DSS, TJ 150C. Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board , t sec. 2 2015-9-30 AUIRF7316Q 100 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V -I D , Drain-to-Source Current (A) -ID , Drain-to-Source Current (A) 100 10 -3.0V 20s PULSE WIDTH TJ = 25C A 1 0.1 1 10 -3.0V 20s PULSE WIDTH TJ = 150C A 1 0.1 10 -VDS, Drain-to-Source Voltage (V) 100 100 -ISD , Reverse Drain Current (A) -I D , Drain-to-Source Current (A) 10 Fig. 2 Typical Output Characteristics Fig. 1 Typical Output Characteristics TJ = 25C TJ = 150C 10 V DS = -10V 20s PULSE WIDTH 1 3.0 3.5 4.0 4.5 5.0 5.5 -VGS , Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 1 -VDS, Drain-to-Source Voltage (V) 6.0 A TJ = 150C 10 TJ = 25C VGS = 0V 1 0.4 0.6 0.8 1.0 1.2 A 1.4 -VSD , Source-to-Drain Voltage (V) Fig. 4 Typical Source-Drain Diode Forward Voltage 2015-9-30 AUIRF7316Q RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 ID = 4.9A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature ( C) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current EAS , Single Pulse Avalanche Energy (mJ) 300 ID -1.3A -2.2A BOTTOM -2.8A TOP 250 200 150 100 50 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) Fig. 7 Typical On-Resistance Vs. Gate Voltage 4 Fig 8. Maximum Avalanche Energy Vs. Drain Current 2015-9-30 AUIRF7316Q -VGS , Gate-to-Source Voltage (V) 20 ID = -4.9A VDS =-15V 16 12 8 4 0 0 10 20 30 40 QG, Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 2015-9-30 AUIRF7316Q SO-8 Package Outline (Dimensions are shown in millimeters (inches) D D IM B 8 6 7 6 M IN A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 B ASIC 1.27 B ASIC e1 5 H E 1 6X 2 3 0.25 [ .010] 4 A e e1 0.25 [ .010] A1 C A M AX .025 B ASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 A C 8X b M ILLIM ETERS M AX 5 A IN C H ES M IN y 0.10 [ .004] B 8X L F O O T P R IN T N O TE S : 1. D IM E N S IO N IN G & T O L E R A N C IN G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 . 2. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R 3. D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S [ IN C H E S ] . 4. O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S - 0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S . M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .1 5 [ . 0 0 6 ] . 6 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S . M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 [ . 0 1 0 ] . 7 D IM E N S IO N IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S TR A TE . 8X c 7 8 X 0 .7 2 [ .0 2 8 ] 6 .4 6 [ .2 5 5 ] 3 X 1 .2 7 [ .0 5 0 ] 8 X 1 .7 8 [ .0 7 0 ] SO-8 Part Marking Information 6 2015-9-30 AUIRF7316Q SO-8 Tape and Reel (Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 7 2015-9-30 AUIRF7316Q Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. SO-8 MSL1 Class M2 (+/- 200V) AEC-Q101-002 Class H1A (+/- 500V) AEC-Q101-001 Class C5 (+/- 2000V) AEC-Q101-005 Yes Highest passing voltage. Revision History Date 4/3/2014 9/30/2015 Comments Added "Logic Level Gate Drive" bullet in the features section on page 1 Updated part marking on page 6. Updated data sheet with new IR corporate template Updated datasheet with corporate template Corrected ordering table on page 1. Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. 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It is the responsibility of customer's technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies' products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 8 2015-9-30