AO8810 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8810/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO8810 and AO8810L are electrically identical. -RoHS Compliant -AO8810L is Halogen Free VDS (V) = 20V ID = 7 A (VGS = 4.5V) RDS(ON) < 20m (VGS = 4.5V) RDS(ON) < 21m (VGS = 4.0V) RDS(ON) < 22m (VGS = 3.1V) RDS(ON) < 24m (VGS = 2.5V) RDS(ON) < 32m (VGS = 1.8V) ESD Rating: 2000V HBM D1 TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D2 G1 G2 S2 S1 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. 8 V 30 1.5 W 1 TJ, TSTG C -55 to 150 Symbol t 10s Steady-State Steady-State A 5.7 PD TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 7 TA=25C Power Dissipation A Maximum 20 RJA RJL Typ 64 89 53 Max 83 120 70 Units C/W C/W C/W www.aosmd.com AO8810 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage ID(ON) On state drain current Conditions Min ID=250A, VGS=0V Static Drain-Source On-Resistance 1 TJ=55C Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge A A 1 V 12 16.5 20 18 23 28 VGS=4.5V, VDS=5V 30 VGS=4.5V, ID=7A A m VGS=4.0V, ID=7A 12 17 21 m VGS=3.1V, ID=6.5A 13 18 22 m VGS=2.5V, ID=5.5A 14 20 24 m VGS=1.8V, ID=5A 16 24 32 m 1 V 2.5 A VDS=5V, ID=7A DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance 1 10 0.4 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Output Capacitance A 0.6 VDS=0V, VGS=8V VDS=VGS ID=250A Forward Transconductance Crss 5 VDS=0V, VGS=4.5V VSD Coss Units V VDS=16V, VGS=0V gFS IS Max 20 TJ=125C RDS(ON) Typ 29 0.76 S 1160 pF 187 pF 146 pF VGS=0V, VDS=0V, f=1MHz 1.5 16 nC VGS=4.5V, VDS=10V, ID=7A 0.8 nC VGS=0V, VDS=10V, f=1MHz Qgd Gate Drain Charge 3.8 nC tD(on) Turn-On DelayTime 6.2 ns 12.7 ns 51.7 ns 16 ns ns nC tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=7A, dI/dt=100A/s 17.7 Qrr Body Diode Reverse Recovery Charge IF=7A, dI/dt=100A/s 6.7 VGS=5V, VDS=10V, RL=1.35, RGEN=3 2 A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 7 : Feb. 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO8810 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10V VGS=5V 8V VGS =2V 15 20 ID(A) ID(A) VGS =1.5V 10 10 125C 5 VGS =1V 25C 0 0 0 1 2 3 4 5 0.0 0.5 VDS(Volts) 1.0 Figure 1: On-Regions Characteristics 50 2.0 2.5 1.6 VGS=4.5V Normalize ON-Resistance ID=6.5A 40 RDS(ON)(m) 1.5 VGS(Volts) Figure 2: Transfer Characteristics VGS =1.8V 30 VGS =2.5V 20 VGS =4.5V 1.4 VGS=1.8V 1.2 1.0 0.8 VGS=2.5V 10 0 5 10 15 20 0.6 -50 ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 60 1E+01 ID=6.5A 1E+00 125C 1E-01 40 IS(A) RDS(ON)(m) 50 125C 30 1E-02 1E-03 20 1E-04 25C 25C 1E-05 10 0 2 4 6 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 8 0.0 0.2 0.4 0.6 0.8 1.0 VSD(Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO8810 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2000 5 VDS=10V ID=7A 1600 Capacitance (pF) VGS(Volts) 4 3 2 Ciss 1200 800 Crss 400 1 0 0 0 5 10 15 0 20 100.0 10 15 20 40 TJ(Max)=150C TA=25C RDS(ON) limited 10s 1ms 0.1s TJ(Max)=150C TA=25C 30 100s Power (W) 10.0 5 VDS(Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics ID (Amps) Coss 10ms 1.0 20 10 1s 10s DC 0 0.001 0.1 0.1 1 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=83C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com