1. General description
The SA636 is a low-voltage high performance monolithic FM IF system with high-speed
RSSI incorporating a mixer/oscillator, two limiting intermediate frequency amplifiers,
quadrature detector, logarithmic Received Signal Strength Indicator (RSSI), voltage
regulator, wideband data output and fast RSSI op amps. The SA636 is available in
20-lead SSOP (Shr ink Small Ou tlin e Pac ka ge ) an d HVQ F N20 (qu a d fla t package).
The SA636 was designed for high bandwidth portable communication applications and
will function down to 2.7 V. The RF section is similar to the famous SA605. The data
output has a minimum bandwidth of 600 kHz. This is designed to demodulate wideband
data. The RSSI output is amplif ied. The RSSI output has access to the feedback pin. This
enables the designer to adjust the level of the outputs or add filtering.
SA636 incorporates a power-down mode which powers down the device when
POWER_DOWN_CTRL pin is LOW. Power-down logic levels are CMOS and TTL
compatible with high input impedance.
2. Features and benefits
Wideband data output (600 kHz minimum)
Fast RSSI rise and fall times
Low power consum ption: 6.5 mA typica l at 3 V
Mixer input to >500 MHz
Mixer conversion power gain of 11 dB at 240 MHz
Mixer noise figure of 12 dB at 240 MHz
XTAL oscillator effective to 150 MHz (LC oscillator to 1 GHz local oscillator can be
injected)
92 dB of IF amp/limiter gain
25 MHz limiter small signal bandwidth
Temp erature compensated logarithmic Received Signal Strength Indicator (RSSI) with
a dynamic range in excess of 90 dB
RSSI output internal op amp
Internal op amps with rail-to-rail outputs
Low external com p on e nt count; suitable for crystal/ceramic/LC filters
Excellent sensitivity: 0.54 V into 50 matching network for 12 dB SINAD
(Signal-to-Noise And Distortion ratio) for 1 kHz tone with RF at 240 MHz and IF at
10.7 MHz
10.7 MHz filter matching (330 )
Power-down mode (ICC =200A)
SA636
Low voltage high performance mixer FM IF system
with high-speed RSSI
Rev. 5 — 24 July 2012 Product data sheet
SA636 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 24 July 2012 2 of 29
NXP Semiconductors SA636
Low voltage high performance mixer FM IF system
ESD protection exceeds 2000 V HBM per JESD22-A114 and 1000 V CDM per
JESD22-C101
Latch-up testing is done to JEDEC Standard JESD78 Class II, Level B
3. Applications
DECT (Digital European Cordless Telephone)
Digital cordless telephones
Digital cellular telephones
Portable high performance communications receivers
Single conversion VHF/UHF receivers
FSK and ASK data receivers
Wireless LANs
4. Ordering information
Table 1. Ordering information
Type number Topside
mark Package
Name Description Version
SA636BS 636B HVQFN20 plastic thermal enhanced very thin quad flat package; no leads;
20 terminals; body 4 40.85 mm SOT917-1
SA636DK/01 SA636DK SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1
SA636 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 24 July 2012 3 of 29
NXP Semiconductors SA636
Low voltage high performance mixer FM IF system
5. Block diagram
Fig 1. Block diagram of SA636
002aaf661
mixer
IF amp limiter
OSC FAST
RSSI
quad
audio
EB
POWER
DOWN
RSSI
VCC
RF_IN
RF_IN_DECOUPL
OSC_OUT
OSC_IN
VCC
RSSI_FEEDBACK
RSSI_OUT
POWER_DOWN_CTRL
DATA_OUT
QUADRATURE IN LIMITER_OUT
LIMITER_DECOUP
L
LIMITER_DECOUP
L
LIMITER_IN
GND
IF_AMP_OUT
IF_AMP_DECOUPL
IF_AMP_IN
IF_AMP_DECOUPL
MIXER_OUT
SA636 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 24 July 2012 4 of 29
NXP Semiconductors SA636
Low voltage high performance mixer FM IF system
6. Pinning information
6.1 Pinning
Fig 2. Pin configuratio n for SSOP2 0
(1) Die Attach Paddle (DAP).
Fig 3. Pin configuration for HVQFN20
SA636DK/01
RF_IN MIXER_OUT
RF_IN_DECOUPL IF_AMP_DECOUPL
OSC_IN IF_AMP_IN
OSC_OUT IF_AMP_DECOUPL
VCC IF_AMP_OUT
RSSI_FEEDBACK GND
RSSI_OUT LIMITER_IN
POWER_DOWN_CTRL LIMITER_DECOUPL
DATA_OUT LIMITER_DECOUPL
QUADRATURE_IN LIMITER_OUT
002aaf660
1
2
3
4
5
6
7
8
9
10
12
11
14
13
16
15
18
17
20
19
002aag294
SA636BS
Transparent top view
LIMITER_DECOUPL
AUDIO_FEEDBACK
RSSI_OUT
LIMITER_IN
VCC GND
OSC_IN IF_AMP_OUT
OSC_OUT IF_AMP_DECOUPL
POWER_DOWN
DATA_OUT
QUADRATURE_IN
LIMITER_OUT
LIMITER_DECOUPL
RF_IN_DECOUPL
RF_IN
MIXER_OUT
IF_AMP_DECOUPL
IF_AMP_IN
511
412
313
214
115
6
7
8
9
10
20
19
18
17
16
terminal 1
index area
DAP(1)
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Product data sheet Rev. 5 — 24 July 2012 5 of 29
NXP Semiconductors SA636
Low voltage high performance mixer FM IF system
6.2 Pin description
[1] HVQFN20 package die supply ground is connected to both GND pin and exposed center pad. GND pin
must be connected to supply ground for proper device operation. For enhanced thermal, electrical, and
board level performance, the exposed pad needs to be soldered to the board using a corresponding
thermal pad on the board and for proper heat conduction through the board, thermal vias need to be
incorporated in the printed-circuit board in the thermal pad region.
Table 2. Pin description
Symbol Pin Description
SSOP20 HVQFN20
RF_IN 1 19 RF input
RF_IN_DECOUPL 2 20 RF input decoupling pin
OSC_OUT 3 1 oscillator output (emitter)
OSC_IN 4 2 oscillator input (base)
VCC 5 3 positive supply voltage
RSSI_FEEDBACK 6 4 RSSI amplifier negative feedback terminal
RSSI_OUT 7 5 RSSI output
POWER_DOWN_CTRL 8 6 power-down control; active HIGH
DATA_OUT 9 7 data output
QUADRATURE_IN 10 8 quadrature detector input terminal
LIMITER_OUT 11 9 limiter amplifier output
LIMITER_DECOUPL 12 10 limiter amplifier decoupling pin
LIMITER_DECOUPL 13 11 limiter amplifier decoupling pi n
LIMITER_IN 14 12 limiter amplifier input
GND 15 13[1] ground; negative supply
IF_AMP_OUT 16 14 IF amplifier output
IF_AMP_DECOUPL 17 15 IF amplifier decoupling pin
IF_AMP_IN 18 16 IF amplifier input
IF_AMP_DECOUPL 19 17 IF amplifier decoupling pin
MIXER_OUT 20 18 mixer output
- - DAP exposed die attach paddle
SA636 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 24 July 2012 6 of 29
NXP Semiconductors SA636
Low voltage high performance mixer FM IF system
7. Functional description
The SA636 is an IF signal processing system suitable for second IF or single conversion
systems with input frequency as high as 1 GHz. The ban dwidth of the IF amplifier is a bout
40 MHz with 38 dB of gain from a 50 source. The bandwidth of the limiter is about
28 MHz with about 54 dB of gain from a 50 source. However, the gain/bandwidth
distribution is optimized for 10.7 MHz, 330 source applications. The overall system is
well-suited to battery operation as well as high performance and hig h quality pr od u cts of
all types such as cordless and cellular hand-held phones.
The input stage is a Gilbert cell mixer with oscillator. Typical mixer characteristics include
a noise figure of 14 dB, conversion gain of 11 dB, and input third-order intercept of
16 dBm. The oscillator will operate in excess of 1 GHz in L/C tank configurations. Hartley
or Colpitts circuits can be used up to 100 MHz for crystal configurations. Butler oscillators
are recommended for crystal configurations up to 150 MHz.
The output of the mixer is internally loaded with a 330 resistor permitting direct
connection to a 10.7 MHz ceramic filter for narrowband applications. The inp ut resist ance
of the limiting IF amplifiers is also 330 . With most 10.7 MHz ceramic filters and many
crystal filters, no impedance matching network is necessary. For applications requiring
wideband IF filtering, such as DECT, external LC filters are used (see Figure 15).
To achieve optimum linearity of the log signal strength indicator, there must be a 6 dBV
insertion loss between the first and second IF stages. If the IF filter or interstage network
does not cause 6 dBV insertion loss, a fixed or variable resistor can be added between
the first IF output (IF_AMP_OUT) and the interstage network.
The signal from the second limiting amplifier goes to a Gilbert cell quadrature detector.
One port of the Gilbert cell is internally driven by the IF. The other output of the IF is
AC-coupled to a tuned quadrature network. This signal, which now has a 90 phase
relationship to the internal signal, drives the other port of the multiplier cell.
Overall, the IF section has a gain of 90 dB for operation at intermediate frequency at
10.7 MHz. Special care must be given to layout, termination, and interstage loss to avoid
instability.
The demodulated output (DAT A_OUT) of th e quadrature is a voltage output. This output is
designed to handle a minimum bandwidth of 600 kHz. This is designed to demodulate
wideband data, such as in DECT applications.
A Received Signal Strength Indicator (RSSI) completes the circuitry. The output range is
greater than 90 dB and is temperature compensated. This log signal strength indicator
exceeds the criteria for AMPS or TACS cellular telephone, DECT and RCR-28 cordless
telephone. This signal drives an internal op amp. The op amp is capable of rail-to-rail
output. It can be used for gain, filteri ng, or second- order temperature compen sation of the
RSSI, if needed.
Remark: dBV = 20log VO/VI.
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Product data sheet Rev. 5 — 24 July 2012 7 of 29
NXP Semiconductors SA636
Low voltage high performance mixer FM IF system
8. Internal circuitry
Table 3. Internal circuits for each pin
Pin numbers shown for SSOP20 package; HVQFN20 pins shown in parentheses in ‘Pin’ column.
Symbol Pin DC V Equivalent circuit
RF_IN 1 (19) +1.07 V
RF_IN_DECOUPL 2 (20) +1.07 V
OSC_OUT 3 (1) +1.57 V
OSC_IN 4 (2) +2.32 V
VCC 5 (3) +3.00 V
RSSI_FEEDBACK 6 (4) +0.20 V
1
0.8 kΩ 0.8 kΩ
2
002aac983
4
18 kΩ
002aac984
3
MIX
002aac985
5
VREF
BANDGAP
6
002aac986
−
VCC
+
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Product data sheet Rev. 5 — 24 July 2012 8 of 29
NXP Semiconductors SA636
Low voltage high performance mixer FM IF system
RSSI_OUT 7 (5) +0.2 0 V
POWER_DOWN_CTRL 8 (6) +2.75 V
DATA_OUT 9 (7) +1.09 V
QUADRATURE_IN 10 (8) +3.00 V
LIMITER_OUT 11 (9) +1.35 V
Table 3. Internal circuits for each pin …continued
Pin numbers shown for SSOP20 package; HVQFN20 pins shown in parentheses in ‘Pin’ column.
Symbol Pin DC V Equivalent circuit
7
002aac988
VCC
8
R
002aac989
R
9
002aac990
VCC
80 kΩ
002aac991
10
20 μA
002aac992
11
8.8 kΩ
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Product data sheet Rev. 5 — 24 July 2012 9 of 29
NXP Semiconductors SA636
Low voltage high performance mixer FM IF system
LIMITER_DECOUPL 12 (10) +1.23 V
LIMITER_DECOUPL 13 (11) +1.23 V
LIMITER_IN 14 (12) +1.23 V
GND 15 (13) 0 V -
IF_AMP_OUT 16 (14) +1.22 V
IF_AMP_DECOUPL 17 (15) +1.22 V
IF_AMP_IN 18 (16) +1.22 V
IF_AMP_DECOUPL 19 (17) +1.22 V
MIXER_OUT 20 (18) +1.03 V
Table 3. Internal circuits for each pin …continued
Pin numbers shown for SSOP20 package; HVQFN20 pins shown in parentheses in ‘Pin’ column.
Symbol Pin DC V Equivalent circuit
002aac994
16
8.8 kΩ
140 Ω
110 Ω
002aac996
400 μA
20
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Product data sheet Rev. 5 — 24 July 2012 10 of 29
NXP Semiconductors SA636
Low voltage high performance mixer FM IF system
9. Limiting values
10. Thermal characteristics
11. Static characteristics
Ta ble 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCC supply voltage 0.3 7 V
Vnvoltage on any other pin 0.3 VCC +0.3 V
Tstg storage temperature 65 +150 C
Tamb ambient temperature operating 40 +85 C
Ta ble 5. Th ermal characteristics
Symbol Parameter Conditions Max Unit
Zth(j-a) transient thermal imped ance
from junction to ambient SA636DK/01 (SSOP20) 117 K/W
SA636BS (HVQFN20) 40 K/W
Table 6. Static characteristics
VCC =3V; T
amb =25
C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VCC supply voltage 2.7 3.0 5.5 V
ICC supply current DC current drain;
POWER_DOWN_CTRL = HIGH 5.5 6.5 7.5 mA
IIinput current POWER_DOWN_CTRL = LOW 10 - +10 A
POWER_DOWN_CTRL = HIGH 10 - +10 A
VIinput voltage POWER_DOWN_CTRL = LOW 0 - 0.3 VCC V
POWER_DOWN_CTRL = HIGH 0.7 VCC -V
CC V
ICC(stb) standby supply current POWER_DOWN_CTRL = LOW - 0.2 0.5 mA
tON power-up time RSSI valid (10 % to 90 %) - 10 - s
tOFF power-down time RSSI invalid (90 % to 10 % ) - 5 - s
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Product data sheet Rev. 5 — 24 July 2012 11 of 29
NXP Semiconductors SA636
Low voltage high performance mixer FM IF system
12. Dynamic characteristics
Table 7. Dynamic characteristics
Tamb =25
C; VCC = +3 V, unless otherwise stated. RF frequency = 240.05 MHz + 14.5 dBV RF input step-up;
IF frequency = 10.7 MHz; RF level =
45 dBm; FM modulation = 1 kHz with
125 kHz peak deviation. Audio output with
C-message weighted filter and de-emphasis capacitor. Test circuit Figure 17. The parameters listed below are tested using
automatic test equipment to assure consistent electrical characteristics. The limits do not represent the ultimate performance
limits of the device. Use of an optimized RF layout will improve many of the listed parameters.
Symbol Parameter Conditions Min Typ Max Unit
Mixer/oscillator section (external LO = 160 m V RMS value)
fiinput frequency - 500 - MHz
fosc oscillator frequency external oscillator (buffer) - 500 - MHz
NF noise figure at 240 MHz - 12 - dB
IP3Iinput third-order intercept point matched f1 = 240.05 MHz;
f2 = 240.35 MHz -16 - dBm
Gp(conv) conversion power gain matched 14.5 dBV step-up 8 11 14 dB
Ri(RF) RF input resistance single-ended input - 700 -
Ci(RF) RF input capacitance - 3.5 - pF
Ro(mix) mixer output resistance MIXER_OUT pin - - -
IF section
Gamp(IF) IF amplifier gain 330 load - 38 - dB
Glim limiter gain 330 load - 54 - dB
Pi(IF) IF input power for 3 dB input limiting sensitivity;
test at IF_AMP_IN pin -105 - dBm
AM AM rejection 80 % AM 1 kHz - 40 - dB
Vo(RMS) RMS output voltage RL=100k120 130 - mV
B3dB 3 dB bandwidth 600 700 - kHz
SINAD signal-to-noise-and-distortion ratio RF level = 111 dBm - 16 - dB
THD tot al harmonic disto rti on - 43 38 dB
S/N signal-to-noise ratio no modulation for noise - 60 - dB
Vo(RSSI) RSSI output voltage IF with buffer
IF level = 118 dBm - 0.2 0.5 V
IF level = 68 dBm 0.3 0.6 1.0 V
IF level = 10 dBm 0.9 1.3 1.8 V
tr(o) output rise time IF RSSI output; 10 kHz pulse;
no 10.7 MHz fi lter;
no RSSI bypass capacitor;
IF frequency = 10.7 MHz
RF level = 56 dBm - 1.2 - s
RF level = 28 dBm - 1.1 - s
tf(o) output fall time IF RSSI output; 10 kHz pulse;
no 10.7 MHz fi lter;
no RSSI bypass capacitor;
IF frequency = 10.7 MHz
RF level = 56 dBm - 2.0 - s
RF level = 28 dBm - 7.3 - s
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Product data sheet Rev. 5 — 24 July 2012 12 of 29
NXP Semiconductors SA636
Low voltage high performance mixer FM IF system
13. Performance curves
RSSI(range) RSSI range - 90 - dB
RSSI RSSI variation - 1.5 - dB
Zi(IF) IF input impedance - 330 -
Zo(IF) IF output impedance - 330 -
Zi(lim) limiter input impedance - 330 -
Zo(lim) limiter output impedance - 300 -
Vo(RMS) RMS output voltage limiter output le vel with no load - 130 - mV
RF/IF section (internal LO)
Vo(RSSI) RSSI output voltage system; RF level = 10 dBm - 1.4 - V
SINAD signal-to-noise-and-distortion ratio system; RF level = 106 dBm - 12 - dB
Table 7. Dynamic characteristics …continued
Tamb =25
C; VCC = +3 V, unless otherwise stated. RF frequency = 240.05 MHz + 14.5 dBV RF input step-up;
IF frequency = 10.7 MHz; RF level =
45 dBm; FM modulation = 1 kHz with
125 kHz peak deviation. Audio output with
C-message weighted filter and de-emphasis capacitor. Test circuit Figure 17. The parameters listed below are tested using
automatic test equipment to assure consistent electrical characteristics. The limits do not represent the ultimate performance
limits of the device. Use of an optimized RF layout will improve many of the listed parameters.
Symbol Parameter Conditions Min Typ Max Unit
Fig 4. Supply current versus ambient temperature Fig 5. Power-down mode supply current versus
ambient temperature
7
8
6
9
I
CC
(mA)
5
T
amb
(°C)
−40 856010 35−15
002aag206
V
CC
= 5.0 V
3.3 V
2.7 V
0.2
0.4
0.1
0.5
I
CC(pd)
(mA)
0
T
amb
(°C)
−40 856010 35−15
002aag223
V
CC
= 5.0 V
3.3 V
2.7 V
0.3
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Product data sheet Rev. 5 — 24 July 2012 13 of 29
NXP Semiconductors SA636
Low voltage high performance mixer FM IF system
RF level = 45 dBm RF level = 45 dBm
Fig 6. Mixer conversion power gain versus
ambient temperature Fig 7. Mixer input third-o rde r intercept point at
240 MHz versus ambient temperature
VCC = 3 V; RF = 240 MHz; level = 68 dBm;
deviation = 125 kHz
Fig 8. Audio reference le v el versus
ambient temperature Fig 9. 12 dB SINAD and relative au dio, THD, noise,
and AM rejection versus ambient temperature
Fig 10. RSSI output voltage versus IF level Fig 11. RSSI output voltage versus RF level
10
12
8
14
16
G
p(conv)
(dB)
6
T
amb
(°C)
−40 856010 35−15
002aag224
V
CC
= 5.5 V
3.0 V
2.7 V
−15
−11
−19
−7
IP3
I
(dBm)
−23
T
amb
(°C)
−40 856010 35−15
002aag225
V
CC
= 5.5 V
3.0 V
2.7 V
Tamb (°C)
−40 856010 35−15
002aag295
VCC = 5.5 V
3.0 V
2.7 V
100
200
300
0
audio reference
(mV)
−40
−100
0
20
relative
level
(dB)
−120
T
amb
(°C)
−40 856010 35−15
002aag296
−80
−60
−20
audio
AM rejection
distortion
noise
12 dB SINAD
IF level (dBm)
−110 0−90
002aag300
1.2
0.8
1.6
0.4
2.0
0
Vo(RSSI)
(V)
−70 −50 −30 −10
Tamb = −40 °C
25 °C
85 °C
RF level (dBm)
−110 0−90
002aag301
1.2
0.8
1.6
0.4
2.0
0
Vo(RSSI)
(V)
−70 −50 −30 −10
Tamb = −40 °C
25 °C
85 °C
SA636 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 24 July 2012 14 of 29
NXP Semiconductors SA636
Low voltage high performance mixer FM IF system
Fig 12. Mixer third-order intercept and compression
002aag297
RF input level (dBm)
−70 −10−30−50
−70
−30
10
−110
IF output power
(dBm)
fund product
3rd-order product
a. Tamb =40 C; Vo(aud)RMS =118mV b. T
amb =25C; Vo(aud)RMS =129mV
c. Tamb =85C; Vo(aud)RMS =131mV
Fig 13. Relative level of audio, AM rejection, THD+N and noise versus RF level
RF level (dBm)
−110 0−90
002aag227
−30
−50
−10
−70
10
−90
relative level
(dB)
−70 −50 −30 −10
audio
AM rejection
THD+N
noise
RF level (dBm)
−110 0−90
002aag226
−30
−50
−10
−70
10
−90
relative level
(dB)
−70 −50 −30 −10
audio
AM rejection
THD+N
noise
RF level (dBm)
−110 0−90
002aag228
−30
−50
−10
−70
10
−90
relative level
(dB)
−70 −50 −30 −10
audio
AM rejection
THD+N
noise
SA636 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 24 July 2012 15 of 29
NXP Semiconductors SA636
Low voltage high performance mixer FM IF system
14. Application information
a. 600 kHz data rate b. 1 kHz data rate
IF = 9.85 MHz; deviation = 288 kHz; RF = 40 dBm
Fig 14. Data level versus ambient temperature
0.4
0.6
0.2
0.8
data level
(V
(p-p)
)
0
T
amb
(°C)
−40 856010 35−15
002aag298
V
CC
= 5.5 V
3.0 V
2.7 V
0.4
0.6
0.2
0.8
data level
(V
(p-p)
)
0
T
amb
(°C)
−40 856010 35−15
002aag299
V
CC
= 5.5 V
3.0 V
2.7 V
Fig 15. SA636 110.592 MHz (RF), 9.8 MHz (IF) DECT application circuit
002aag302
20
19
18
17
16
15
14
13
12
11
MIXER_OUT
IF_AMP_DECOUPL
IF_AMP_IN
IF_AMP_DECOUPL
IF_AMP_OUT
GND
LIMITER_IN
LIMITER_DECOUPL
LIMITER_DECOUPL
LIMITER_OUT
U1
SA636DK/01
1
2
3
4
5
6
7
8
9
10
RF_IN
RF_IN_DECOUPL
OSC_OUT
OSC_IN
V
CC
RSSI_FEEDBACK
RSSI_OUT
POWER_DOWN_CTRL
DATA_OUT
QUADRATURE_IN
C20
68 pF
C19
1 nF
C18
68 pF
L4
680 nH
C21
330 pF
C17
1 nF
C16
100 pF
C13
100 pF
C11
1 nF
C12
1 nFC14
47 pF
C15
330 pF
L3
680 nH
R6
560 Ω
C10
15 pF
C7
470 pF
L2
2.2 μH
C9
82 pF
C8
5 pF to
30 pF
R5
1.2 kΩ
C2
10 nF
L1
180 nH
C1
5 pF to 30 pF
SMA
RF input
110.592 MHz
± 288 kHz
J1
C3
1 nF
R1
51 Ω
C4
1 nF
SMA
LO input
120.392 MHz
at −10 dBm
J2
C6
100 nF
C5
15 μF
R2
10 Ω
DATA OUT
PWR DWN
RSSI
GND
V
CC
+3 V
J3
R3
22 kΩ
R4
33 kΩ
SA636 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 24 July 2012 16 of 29
NXP Semiconductors SA636
Low voltage high performance mixer FM IF system
Table 8. DECT application circuit electrical characteristics
RF frequency = 110 .5 92 MHz; IF frequency = 9.8 MHz; RF level =
45 dBm; FM modulation = 100 kHz with
288 kHz peak
deviation.
Symbol Parameter Conditions Min Typ Max Unit
Mixer/oscillator section (external LO = 160 m V RMS value)
Gp(conv) conversion power gain - 13 - dB
NF noise figure at 110 MHz - 12 - dB
IP3Iinput third-order intercept point matched f1 = 110.592 MHz;
f2 = 110.892 MHz -15 - dBm
Ri(RF) RF input resistance - 690 -
Ci(RF) RF input capacitance - 3.6 - pF
IF section
Gamp(IF) IF amplifier gain 330 load - 38 - dB
Glim limiter gain 330 load - 54 - dB
Vo(RMS) RMS output voltage RL=3k-130-mV
B3dB 3 dB bandwidth - 700 - kHz
RF/IF section (internal LO)
Vo(RSSI) RSSI output voltage system; RF level = 10 dBm - 1.4 - V
S/N signal-to-noise ratio system; RF level = 83 dBm - 10 - dB
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Product data sheet Rev. 5 — 24 July 2012 17 of 29
NXP Semiconductors SA636
Low voltage high performance mixer FM IF system
a. Top silk screen
b. Top view
c. Bottom view
Remark: Not actual size.
Fig 16. SA636 demo board layout (SSOP20)
002aag362
LO IN
RF IN
C2
C4
C1
5-30 pF
1 nF
1 nF
1 nF
1 nF
1 nF
1 nF
R1 C3
C6 100 nF
51 Ω
10 nF
180
nH
L1
C20
C18 68 pF
68 pF
15 μF
SA636DK
C5
R2 R4 R3
10 Ω
33 kΩ
22 kΩ
470 pF
1.2 kΩ
L4
680
nH
330 pF
C21
C19
VRPD
L2
C7
R5
2.2 μH
C8 5-30 pF
82 pF
15 pF
C17
C16
C13
100 pF
100 pF
C9
C10
C11
C12
C14
C15
R6 L3
680
nH
47 pF
330 pF
560 Ω
002aag363
002aag364
SA636 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 24 July 2012 18 of 29
NXP Semiconductors SA636
Low voltage high performance mixer FM IF system
15. Test information
The layout is very critical in the performance of the receiver. We highly recommend our
demo board layout.
All of the inductors, the quad tank, and their shield must be grounded. A 0.1 F bypass capacitor
on the supply pin improves sensitivity.
Fig 17. 240.05 MHz (RF) / 10.7 MH z (IF) test circuit
002aag360
mixer
IF amp limiter
OSC RSSI
quad
data
20 19 18 17 16 15 14 13 12 11
1234567 9810
C13 C15
FL2
C19
C6
C7
VCC
C3
L1 C2
RF_IN
C1
L2
C4
L3 C5
LO_IN
VCC
RSSI_OUT
PWR
DWN
POWER_DOWN_CTRL
C8
FL3
FL4
DATA_OUT
L4R1
C9
C10
C21
S5
R10
R11
C20
C18
12
C17
R7
R8
R9
21
R5
C16 R6
12
C14
R2
R3
R4
IF/LIM_IN
21
FL1
C11
C12
MIXER
IF/LIM_OUT
L5
SA636 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 24 July 2012 19 of 29
NXP Semiconductors SA636
Low voltage high performance mixer FM IF system
[1] This value can be reduced when a battery is the power source.
Ta ble 9. Au tomatic test circuit component list
Component Description
R1 7.5 k resistor; select
R2, R7 6.49 k resistor
R3, R8 347.8 resistor
R4, R6, R9, R11 49.9 resistor
R5, R10 1 k resistor
R12, R14 60.4 resistor
R13 249 resistor
C1, C4 10 nF capacitor
C2 5.6 pF capacitor; select for input match
C3, C10, C11, C14,
C16, C17, C20, C22 0.1 F capacitor
C5 5 pF to 300 pF variable capacitor; Murata TZC3P300A 110R00
C6 100 pF capacitor
C7 15 F, 20 V capacitor[1]
C8 1 F capacitor
C9 39 pF capacitor; select
C10, C13, C15, C18,
C19 1000 pF capacitor
C12 150 pF capacitor; select
C21 2.7 pF capacitor
L2 27 nH inductor[1]; Coilcraft 1008HT-27NT or Garret PM20-RO27;
select for input match
L3 39 nH inductor; Coilcraft 1008HQ-39NX; sele ct for input match
L4 5.6 H variable, shielded inductor, 5 mm SMD; Toko 613BN-9056Z;
select for input match
L5 1.27 H to 2.25 H variable shie lded inductor; 5 mm SMD ; select for
mixer output match
FL1, FL2 10.7 MHz filter (Murata SFE10.7MA5-A)
FL3 ‘C’ message weighted filter
FL4 active de-emphasis filter
SA636 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 24 July 2012 20 of 29
NXP Semiconductors SA636
Low voltage high performance mixer FM IF system
(1) Set your RF generator at 110.592 MHz; use a 100 kHz modulation frequency and a 288 kHz
deviation.
(2) The smallest RSSI voltage (i.e., when no RF input is present and the input is terminated) is a
measure of the quality of the layout and design. If the lowest RSSI voltage is 500 mV or higher, it
means the receiver is in regenerative mode. In that case, the receiver sensitivity will be worse than
expected.
Fig 18. Application circuit test setup
SCOPE
SA636 DEMOBOARD(2)
RSSI DATA
002aag361
RF GENERATOR(1)
110.592 MHz
VCC (+3 V)
LO / GENERATOR
120.392 MHz
SPECTRUM
ANALYZER
DC VOLTMETER
SA636 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 24 July 2012 21 of 29
NXP Semiconductors SA636
Low voltage high performance mixer FM IF system
16. Package outline
Fig 19. Package outline SOT266-1 (SSOP20)
UNIT A1A2A3bpcD
(1) E(1) (1)
eH
ELL
pQZywv θ
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.15
01.4
1.2 0.32
0.20 0.20
0.13 6.6
6.4 4.5
4.3 0.65 1 0.2
6.6
6.2 0.65
0.45 0.48
0.18 10
0
o
o
0.13 0.1
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
0.75
0.45
SOT266-1 MO-152 99-12-27
03-02-19
wM
θ
A
A1
A2
bp
D
HE
Lp
Q
detail X
E
Z
e
c
L
vMA
X
(A )
3
A
y
0.25
110
20 11
pin 1 index
0 2.5 5 mm
scale
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1
A
max.
1.5
SA636 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 24 July 2012 22 of 29
NXP Semiconductors SA636
Low voltage high performance mixer FM IF system
Fig 20. Package outline SOT917-1 (HVQFN20)
0.51
A1Eh
b
UNIT ye
0.2
c
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 4.1
3.9
Dh
2.45
2.15
y1
4.1
3.9 2.45
2.15
e1
2
e2
2
0.30
0.18
0.05
0.00 0.05 0.1
DIMENSIONS (mm are the original dimensions)
SOT917 -1 MO-220- - - - - -
0.6
0.4
L
0.1
v
0.05
w
0 2.5 5 mm
scale
SOT917-1
HVQFN20: plastic thermal enhanced very thin quad flat package; no leads;
20 terminals; body 4 x 4 x 0.85 mm
A(1)
max.
05-10-08
05-10-31
E(1)
D(1)
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
y
y1C
X
C
D
E
BA
terminal 1
index area
e
L
Eh
Dh
e
e1
b
610
20 16
15
11
5
1
e2
AC
CB
vM
wM
terminal 1
index area
detail X
AA1c
SA636 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 24 July 2012 23 of 29
NXP Semiconductors SA636
Low voltage high performance mixer FM IF system
17. Soldering of SMD packages
This text provides a very brief insight into a complex technology. A more in-depth account
of soldering ICs can be found in Application Note AN10365 “Surface mount reflow
soldering description”.
17.1 Introduction to soldering
Soldering is one of the most common methods through which packages are attached to
Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both
the mechanical and the electrical connection. There is no single soldering method that is
ideal for all IC packages. Wave soldering is often preferred when through-hole and
Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not
suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high
densities that come with increased miniaturization.
17.2 Wave and reflow soldering
W ave soldering is a joinin g technology in which the joint s are made by solder coming from
a standing wave of liquid solder. The wave soldering process is suitable for the following:
•Through-hole components
•Leaded or leadless SMDs, which are glued to the surface of the printed circuit board
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless
packages which have solder lands underneath the body, cannot be wave soldered. Also,
leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,
due to an increased probability of bridging.
The reflow soldering process involves applying solder paste to a board, followed by
component placement and exposure to a temperature profile. Leaded packages,
packages with solder balls, and leadless packages are all reflow solderable.
Key characteristics in both wave and reflow soldering are:
•Board specifications, including the board finish, solder masks and vias
•Package footprints, including solder thieves and orientation
•The moisture sensitivity level of the packages
•Package placement
•Inspection and repair
•Lead-free soldering versus SnPb soldering
17.3 Wave soldering
Key characteristics in wave soldering are:
•Process issues, such as application of adhesive and flux, clinching of leads, board
transport, the solder wave parameters, and the time during which components are
exposed to the wave
•Solder bath specifications, including temperature and impurities
SA636 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 24 July 2012 24 of 29
NXP Semiconductors SA636
Low voltage high performance mixer FM IF system
17.4 Reflow soldering
Key characteristics in reflow soldering are:
•Lead-free ve rsus SnPb soldering; note th at a lead-free reflow process usua lly leads to
higher minimum peak temperatures (see Figure 21) than a SnPb process, thus
reducing the process window
•Solder paste printing issues including smearing, release, and adjusting the process
window for a mix of large and small components on one board
•Reflow temperature profile; this profile includes preheat, reflow (in which the board is
heated to the peak temperature) and cooling down. It is imperative that the peak
temperature is high enoug h for the solder to make reliable solder joint s (a solder paste
characteristic). In addition, the peak temperature must be low enough that the
packages and/or boards are not damaged. The peak temperature of the package
depends on package thickness and volume and is classified in accordance with
Table 10 and 11
Moisture sensitivity precautions, as indicated on the packing, must be respected at all
times.
Studies have shown that small packages reach higher temperatures during reflow
soldering, see Figure 21.
Ta ble 10. SnPb eutectic process (from J-STD-020C)
Package thickness (mm) Package reflow temperature (C)
Volume (mm3)
< 350 350
< 2.5 2 35 220
2.5 220 220
Ta ble 11. Lead-free process (from J-STD-020C)
Package thickness (mm) Package reflow temperature (C)
Volume (mm3)
< 350 350 to 2000 > 2000
< 1.6 260 260 260
1.6 to 2.5 260 250 245
> 2.5 250 245 245
SA636 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 24 July 2012 25 of 29
NXP Semiconductors SA636
Low voltage high performance mixer FM IF system
For further information on temperature profiles, refer to Application Note AN10365
“Surface mount reflow soldering description”.
18. Abbreviations
MSL: Moisture Sensitivity Level
Fig 21. Temperature profiles for large and small components
001aac844
temperature
time
minimum peak temperature
= minimum soldering temperature
maximum peak temperature
= MSL limit, damage level
peak
temperature
Ta ble 12. Abbreviations
Acronym Description
AMPS Advanced Mobile Phone System
ASK Amplitude Shift Keying
BER Bit Error Rate
CDM Charged-Device Model
CMOS Complementary Metal-Oxide Semiconductor
DECT Digital European Cordless Telephone
ESD ElectroStatic Discharge
FM F r equency Modulation
FSK Frequency Shift Keying
HBM Human Body Model
IF Intermediate Frequency
LAN Local Area Network
LC inductor-capacitor filter
RCR Research and development Center for Radio systems
RF Radio Frequency
RSSI Received Signal Strength Indicator
SINAD Signal-to-Noise And Distortion ratio
SMD Surface Mount Device
TACS Total Access Communication System
SA636 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 24 July 2012 26 of 29
NXP Semiconductors SA636
Low voltage high performance mixer FM IF system
19. Revision history
TTL Transistor-Transistor Logic
UHF Ultra High Frequency
VHF Very High Frequency
Ta ble 12. Abbreviations …continued
Acronym Description
Table 13. Revision history
Document ID Release date Data sheet status Change notice Supersedes
SA636 v.5 20120724 Product data sheet - SA636 v.4
Modifications: •Section 2 “Features and benefits”:
–deleted (old) 15th bullet item (“ESD hardened”)
–added (new) 17th bullet item
–added (new) 18th bullet item
SA636 v.4 20110909 Product data sheet - SA636 v.3
SA636 v.3 20030801 Product data ECN 853-1757 30101
dated 15 Jul 2003 SA636 v.2
SA636 v.2 19971107 Product data ECN 853-1757 18664
dated 07 Nov 1997 SA636 v.1
SA636 v.1 19940616 Product specification ECN 853-1757 13150
dated 07 Nov 1997 -
SA636 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 24 July 2012 27 of 29
NXP Semiconductors SA636
Low voltage high performance mixer FM IF system
20. Legal information
20.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
20.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre vail.
Product specificat io n — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond tho se described in the
Product data sheet.
20.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Se miconductors takes no
responsibility for the content in this document if provided by an inf ormation
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequ ential damages (including - wit hout limitatio n - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ ag gregate and cumulative l iability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconduct ors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, lif e-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconducto rs products in such equipment or
applications and ther efore such inclu sion and/or use is at the cu stomer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty tha t such application s will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applicati ons or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for th e customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter ms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing i n this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or t he grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the pre liminary specification.
Product [short] dat a sheet Production This document contains the product specification.
SA636 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 24 July 2012 28 of 29
NXP Semiconductors SA636
Low voltage high performance mixer FM IF system
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It i s neit her qua lif ied nor test ed
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standard s, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specificatio ns, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed produ ct claims result ing from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specificat ions.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
20.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
21. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors SA636
Low voltage high performance mixer FM IF system
© NXP B.V. 2012. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 24 July 2012
Document identifier: SA636
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
22. Contents
1 General description. . . . . . . . . . . . . . . . . . . . . . 1
2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
4 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
5 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Pinning information. . . . . . . . . . . . . . . . . . . . . . 4
6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 5
7 Functional description . . . . . . . . . . . . . . . . . . . 6
8 Internal circuitry. . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 10
10 Thermal characteristics . . . . . . . . . . . . . . . . . 10
11 Static characteristics. . . . . . . . . . . . . . . . . . . . 10
12 Dynamic characteristics . . . . . . . . . . . . . . . . . 11
13 Performance curves . . . . . . . . . . . . . . . . . . . . 12
14 Application information. . . . . . . . . . . . . . . . . . 15
15 Test information. . . . . . . . . . . . . . . . . . . . . . . . 18
16 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 21
17 Soldering of SMD packages . . . . . . . . . . . . . . 23
17.1 Introduction to soldering . . . . . . . . . . . . . . . . . 23
17.2 Wave and reflow soldering . . . . . . . . . . . . . . . 23
17.3 Wave soldering. . . . . . . . . . . . . . . . . . . . . . . . 23
17.4 Reflow soldering. . . . . . . . . . . . . . . . . . . . . . . 24
18 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 25
19 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 26
20 Legal information. . . . . . . . . . . . . . . . . . . . . . . 27
20.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 27
20.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
20.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 27
20.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 28
21 Contact information. . . . . . . . . . . . . . . . . . . . . 28
22 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29