050-7046 Rev D 4-2004
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
T-MAX™
G
D
S
TO-264
APT20M20B2FLL
APT20M20LFLL
200V 100A 0.020ΩΩ
ΩΩ
Ω
• Lower Input Capacitance • Increased Power Dissipation
• Lower Miller Capacitance • Easier To Drive
• Lower Gate Charge, Qg • Popular T-MAX™ or TO-264 Package
•
FREDFET
FAST RECOVERY BODY DIODE
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
POWER MOS 7 R FREDFET
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 50A)
Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C 5
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
UNIT
Volts
Ohms
µA
nA
Volts
MIN TYP MAX
200
0.020
250
1000
±100
35
APT20M20B2FLL_LFLL
200
100
400
±30
±40
568
4.55
-55 to 150
300
100
50
2500
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
050-7046 Rev D 4-2004
DYNAMIC CHARACTERISTICS APT20M2B2FLL_LFLL
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
PDM
SINGLE PULSE
ZθJC, THERMAL IMPEDANCE (°C/W)
10-5 10-4 10-3 10-2 10-1 1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -100A)
Peak Diode Recovery dv/dt 6
Reverse Recovery Time
(IS = -100A, di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -100A, di/dt = 100A/µs)
Peak Recovery Current
(IS = -100A, di/dt = 100A/µs)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
µC
Amps
MIN TYP MAX
100
400
1.3
8
Tj = 25°C 220
Tj = 125°C 420
Tj = 25°C 1.07
Tj = 125°C 2.9
Tj = 25°C 12.1
Tj = 125°C 20.6
Symbol
RθJC
RθJA
MIN TYP MAX
0.22
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 7
Turn-off Switching Energy
Turn-on Switching Energy 7
Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 100V
ID = 100A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 100V
ID = 100A @ 25°C
RG = 0.6Ω
INDUCTIVE SWITCHING @ 25°C
VDD = 130V, VGS = 15V
ID = 100A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
VDD = 130V VGS = 15V
ID = 100A, RG = 5Ω
MIN TYP MAX
6850
2180
95
110
43
47
13
40
26
2
465
455
920
915
UNIT
pF
nC
ns
µJ
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 0.50mH, RG = 25Ω, Peak IL = 100A
5 The maximum current is limited by lead temperature
6dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID75A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
7 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
050-7046 Rev D 4-2004
APT20M20B2FLL_LFLL
Typical Performance Curves
250
200
150
100
50
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
6V
5.5V
7.5V
6.5
VGS =15 &10V
7V
9V
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VGS(TH), THRESHOLD VOLTAGE BVDSS, DRAIN-TO-SOURCE BREAKDOWN RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES)
(NORMALIZED) VOLTAGE (NORMALIZED)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON)vs DRAIN CURRENT
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, RDS(ON) vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0 5 10 15 20 25 30
0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160
25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
200
180
160
140
120
100
80
60
40
20
0
120
100
80
60
40
20
0
2.5
2.0
1.5
1.0
0.5
0.0
NORMALIZED TO
VGS = 10V @ ID = 50A
ID = 50A
VGS = 10V
0.0844
0.138
0.0124F
0.218F
Power
(Watts)
RC MODEL
Junction
temp. ( ”C)
Case temperature
050-7046 Rev D 4-2004
APT20M20B2FLL_LFLL
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
20,000
10,000
1,000
100
10
200
100
10
1
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
IDR, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)
1 10 100 200 0 10 20 30 40 50
0 20 40 60 80 100 120 140 160 180 0.3 0.5 0.7 0.9 1.1 1.3 1.5
504
100
10
1
16
12
8
4
0
10mS
1mS
100µS
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
VDS=100V
VDS=40V
VDS=160V
ID = 75A
TJ
=+150°C
TJ
=+25°C
Crss
Ciss
Coss
ID (A) ID (A)
FIGURE 14, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A) RG, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
VDD = 130V
RG = 5Ω
TJ = 125°C
L = 100µH
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
SWITCHING ENERGY (µJ) td(on) and td(off) (ns)
SWITCHING ENERGY (µJ) tr and tf (ns)
VDD = 130V
RG = 5Ω
TJ = 125°C
L = 100µH
20 40 60 80 100 120 140 20 40 60 80 100 120 140
20 40 60 80 100 120 140 0 5 10 15 20 25 30 35 40 45 50
90
80
70
60
50
40
30
20
10
0
1400
1200
1000
800
600
400
200
0
160
140
120
100
80
60
40
20
0
2500
2000
1500
1000
500
0
VDD = 130V
ID = 100A
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery.
VDD = 130V
RG = 5Ω
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery.
050-7046 Rev D 4-2004
APT20M20B2FLL_LFLL
Typical Performance Curves
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
Drain
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
T-MAXTM (B2) Package Outline TO-264 (L) Package Outline
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
I
C
D.U.T.
APT100S20B
V
CE
Fi
g
ure 20
,
Inductive Switchin
g
Test Circuit
V
DD
G
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
Drain Current
Drain Voltage
Gate Voltage TJ125°C
10% 0
td(off)
tf
Switching Energy
90%
90%
Drain Current
Drain Voltage
Gate Voltage
TJ125°C
Switching Energy
10%
td(on)
90%
5%
tr
5% 10%
