OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue F 05/2012
Page 1 of 5
Silicon Phototransistor and Photo Darlington
in 1210 SMD Package
OP525, OP525DA, OP525F
Description:
These devices consist of an NPN silicon phototransistor and photo darlington mounted in a miniature SMD
package with a 1210 size chip carrier that is compatible with most automated mounting and position sensing
equipment.
The OP525 devices have a 1.8mm domed lens and viewing acceptance angle of 25° with higher collector current
gains due to the lenses on package. The OP525 and OP525DA have a water clear lens that senses ambient light
to higher wavelengths for applications from 450nm to 1120nm. The OP525F has a black domed lens to reduce
ambient light noise.
The OP525 series are tested using infrared light for close correlation with Optek GaAs and GaAlAs emitters.
Photo darlington devices are normally used in application where light signals are low and more current gain is
needed than is possible with phototransistors.
Features:
• High Speed and High photo sensitivity
• Fast response time
• 1210 package size
• High Current Gain
• Water clear and black lens choices
• Narrow Viewing Receiving Angle
• Compatible with IR Reflow soldering process
• Moisture Sensitivity Level: MSL3
OP525 and OP525F
OP525 and OP525DA
OP525F
RoHS
Pin # Transistor
1 Collector
2 Emitter
Applications:
• Non-contact position sensing
• Datum detection
• Machine automation
• Optical encoders
• Reflective and transmissive sensors
Part Number Sensor Viewing Angle
OP525 Phototransistor 25º
OP525DA Photo Darlington 25º
OP525F Phototransistor 25º
Ordering Information
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue F 05/2012
Page 2 of 5
Silicon Phototransistor and Photo Darlington
in 1210 SMD Package
OP525, OP525DA, OP525F
OP525DA Package Dimensions
Recommended Solder Pad Patterns
Note: Dimensions mm (inches)
Pin # Transistor
1 Collector
2 Emitter
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue F 05/2012
Page 3 of 5
Silicon Phototransistor and Photo Darlington
in 1210 SMD Package
OP525, OP525DA, OP525F
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Storage Temperature Range -40o C to +100o C
Operating Temperature Range -40o C to +80o C
Lead Soldering Temperature(1) 260° C
Collector-Emitter Voltage
OP525, OP525F
OP525DA
30 V
35 V
Emitter-Collector Voltage 5 V
Power Dissipation(2)
OP525, OP525F
OP525DA
75 mW
100 mW
Collector Current
OP525, OP525F
OP525DA
20 mA
30 mA
Notes:
1. Solder time less than 5 seconds at temperature extreme.
2. Derate linearly at 1.33 mW/° C above 25° C.
3. Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less
than 10% over the entire lens surface of the phototransistor being tested.
4. To calculate typical collector dark current in µA, use the formulate ICEO = 10(0.04 t - ¾), where TA is the ambient temperature in ° C.
Electrical Characteristics (TA = 25°C unless otherwise noted)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Input Diode
IC(ON)
On-State Collector Current
OP525F
OP525
OP525DA
2.0
1.0
10.0
-
-
-
-
-
-
mA
VCE = 5.0 V, EE = 0.5 mW/cm2
VCE = 5.0 V, EE = 1.5 mW/cm2 (3)
VCE = 5.0 V, EE = 0.15 mW/cm2 (3)
VCE(SAT)
Collector-Emitter Saturation Voltage
OP525, OP525F
OP525DA
-
-
-
-
0.4
1.7
V
IC = 100 µA, EE = 1.0 mW/cm2 (3)
IC = 1 mA, EE = 0.5 mW/cm2 (3)
ICEO
Collector-Emitter Dark Current
OP525, OP525F
OP525DA
-
-
100
200
nA
VCC= 10.0 V (4)
VBR(CEO)
Collector-Emitter Breakdown Voltage
OP525, OP525F
OP525DA
30
35
-
-
V
IC= 100 µA, EE = 0
IC= 1 mA, EE = 0
VBR(ECO)
Emitter-Collector Breakdown Voltage
OP525, OP525F
OP525DA
5
5
-
-
-
-
V
IE= 100 µA, EE = 0
IE= 100 µA, EE = 0
tr, tf
Rise and Fall Times
OP525, OP525F
OP525DA
-
15
50
-
-
µs
IC= 1 mA, RL = 1KΩ
IC= 1 mA, RL = 1KΩ
λ 0.5 Spectral Bandwidth OP525F 750 - 1100 nm -
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue F 05/2012
Page 4 of 5
Silicon Phototransistor and Photo Darlington
in 1210 SMD Package
OP525, OP525DA, OP525F
OP525 and OP525DA
OP525
900 1100 1000
0%
20%
40%
60%
80%
100%
Relative Response
Wavelength (nm)
800 700 600 500 400
Relative Response vs. Wavelength
Collector-Emitter Voltage—VCE (V)
Ee = 2.0mW/cm2
4 3 2 1 0
0.5
0.1
3.5
3.0
2.5
2.0
1.5
Collector Current—IC (mA) vs
Collector-Emiiter Voltage VCE (V)
Ee = 1.5mW/cm2
Ee = 1.25mW/cm2
Ee = 1.0mW/cm2
Ee = 0.5mW/cm2
Collector Current—Ic (mA)
5 3 1 0
Optical Power—Ee(mW/cm2)
0.1
100
10
1.0
Collector Current—Ic (mA)
Collector Current—IC (mA) vs
Optical Power-Ee(mW/cm2)
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue F 05/2012
Page 5 of 5
Silicon Phototransistor and Photo Darlington
in 1210 SMD Package
OP525, OP525DA, OP525F
OP525DA
1 .5 .25 0
Optical Power—Ee(mW/cm2)
.1
10
10
1.0
Collector Current—Ic (mA)
Collector Current—IC
Ee = 0.50mW/
4 3 2 1 0
5
10
35
30
25
20
15
Collector Current—IC (mA)
vs
Ee = 0.40mW/
Ee = 0.30mW/
Ee = 0.20mW/
Ee = 0.10mW/
Collector Current—Ic (mA)
Collector-Emitter Voltage—VCE
OP525F
Relative Collector Current vs.Irradiance
Sensitivity Chart Spectral Sensitivity
Relative Response Vs. Wav elength
