www.irf.com 1
8/11/04
IRF7470PbF
SMPS MOSFET
HEXFET® Power MOSFET
VDSS RDS(on) max ID
40V 13mΩ10A
Symbol Parameter Typ. Max. Units
RθJL Junction-to-Drain Lead –– – 20
RθJA Junction-to-Ambient ––– 50 °C/W
Thermal Resistance
Notes through are on page 8
SO-8
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
A
PD- 95276
Absolute Maximum Ratings
Symbol Parameter Max. Units
VDS Drain-Source Voltage 40 V
VGS Gate-to-Source Voltage ± 12 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 10
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 8.5 A
IDM Pulsed Drain Current85
PD @TA = 25°C Maximum Power Dissipation2.5 W
PD @TA = 70°C Maximum Power Dissipation1.6 W
Linear Derating Factor 0.02 W/°C
TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C
lHigh Frequency DC-DC Converters
with Synchronous Rectification
lLead-Free
Applications
Benefits
lUltra-Low Gate Impedance
lVery Low RDS(on) at 4.5V VGS
lFully Characterized Avalanche Voltage
and Current
IRF7470PbF
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Symbol Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
––– 0.80 1.3 V TJ = 25°C, IS = 8.0A, VGS = 0V
––– 0.65 ––– TJ = 125°C, IS = 8.0A, VGS = 0V
trr Reverse Recovery Time ––– 72 110 n s TJ = 25°C, IF = 8.0A, VR= 20V
Qrr Reverse Recovery Charge ––– 130 200 nC di/dt = 100A/µs
trr Reverse Recovery Time ––– 76 110 n s TJ = 125°C, IF = 8.0A, VR=20V
Qrr Reverse Recovery Charge ––– 150 230 nC di/dt = 100A/µs
S
D
G
Diode Characteristics
2.3
85
A
VSD Diode Forward Voltage
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy––– 300 mJ
IAR Avalanche Current––– 8.0 A
Avalanche Characteristics
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS Drain-to-Source Leakage Current
RDS(on) Static Drain-to-Source On-Resistance
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.04 ––– V/°C Reference to 25°C, ID = 1mA
––– 9.0 13 VGS = 10V, ID = 10A
––– 10 15 mΩVGS = 4.5V, ID = 8.0A
––– 14.5 30 VGS = 2.8V, ID = 5.0A
VGS(th) Gate Threshold Voltage 0.8 ––– 2.0 V VDS = VGS, ID = 250µA
––– ––– 20 µA VDS = 32V, VGS = 0V
––– ––– 100 VDS = 32V, VGS = 0V, TJ = 125C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -12V
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 27 ––– ––– S VDS = 20V, ID = 8.0A
QgTotal Gate Charge –– – 29 4 4 ID = 8.0A
Qgs Gate-to-Source Charge ––– 7.9 12 nC VDS = 20V
Qgd Gate-to-Drain ("Miller") Charge ––– 8 .0 12 VGS = 4.5V
Qoss Output Gate Charge ––– 23 35 VGS = 0V, VDS = 16V
td(on) Turn-On Delay Time ––– 10 ––– V DD = 20V
trRise Time ––– 1 .9 ––– I D = 8.0A
td(off) Turn-Off Delay Time ––– 21 ––– R G = 1.8Ω
tfFall Time ––– 3.2 ––– VGS = 4.5V
Ciss Input Capacitance ––– 3430 ––– V GS = 0V
Coss Output Capacitance ––– 690 ––– VDS = 20V
Crss Reverse Transfer Capacitance ––– 41 ––– pF ƒ = 1.0MHz
IRF7470PbF
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Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1 1 10 100
20µs PU LSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
4.5V
3.0V
2.7V
2.5V
2.25V
2.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.0V
1
10
100
0.1 1 10 100
20µs PU LSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
10V
4.5V
3.0V
2.7V
2.5V
2.25V
2.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.0V
1
10
100
2.0 2.2 2.4 2.6 2.8 3.0
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
Fig 4. Normalized On-Resistance
Vs. Temperature
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
10A
IRF7470PbF
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Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
010 20 30 40 50 60
0
2
4
6
8
10
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D8.0A
V = 20V
DS
V = 32V
DS
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.2 0.6 1.0 1.4 1.8 2.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
A
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
110 100
VDS, Dr ain-to-Source Voltage (V)
10
100
1000
10000
100000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C
gs + Cgd, C
ds SHORTED
Crss
= C
gd
Coss
= C
ds + Cgd
IRF7470PbF
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Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. D u ty fa c to r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pul se Durati on ( sec)
Thermal R esponse (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 6. On-Resistance Vs. Drain Current
Fig 10a. Switching Time Test Circuit
V
DS
9
0%
1
0%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
25 50 75 100 125 150
0.0
2.0
4.0
6.0
8.0
10.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
IRF7470PbF
6www.irf.com
Fig 13. On-Resistance Vs. Gate Voltage
Fig 12. On-Resistance Vs. Drain Current
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
D.U.T. V
D
S
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VGS
Q
G
Q
GS
Q
GD
V
G
Charge
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 15
0
200
400
600
800
Starting T , Junction Tem perature ( C)
E , Singl e Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
3.6A
6.4A
8.0A
0 102030405060
ID , Drain Current (A)
0.010
0.015
0.020
0.025
0.030
RDS (on) , Drain-to-Source On Resistance (Ω)
VGS = 4. 5V
VGS = 2. 7V
VGS = 10V
2 4 6 8 10 12 14 16
VGS, G ate -to - Source Vol tage (V)
0.010
0.012
0.014
0.016
0.018
0.020
RDS(on), Drain-to -Source On Resistance (Ω)
ID = 10A
IRF7470PbF
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SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASI C
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX MILLIMETERSINCHES MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASI C 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] CAB
e1 A
A1
8X b
C
0.10 [.004]
4312
FOOT PRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OUTLINE CONFORMS T O JE DEC OUTLINE MS -012AA.
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0 .25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
MOLD PROTRUSIONS NOT TO EXCEED 0 .15 [.006].
8X 1.78 [.070
]
DATE CODE (YWW)
XXXX
INTERNATIONAL
RECTIFIER
LOGO
F7101
Y = LAST DIGIT OF THE YEAR
PART NUMBER
LOT CODE
WW = WEEK
EXAMPLE: THIS IS AN IRF7101 ( MOSFET)
P = DE S IGNAT E S LEAD-FRE E
PROD UCT (OPTIONAL)
A = ASSEMBLY SITE CODE
IRF7470PbF
8www.irf.com
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
N
OTES:
1
. CONT ROLLING DIME NSION : MIL LIME TER.
2
. ALL DI M EN S IONS A RE SH OWN IN MI LLIME TE RS ( I N CH E S ).
3
. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Starting TJ = 25°C, L = 9.4mH
RG = 25Ω, IAS = 8.0A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec