SPB21N50C3 Cool MOSTM Power Transistor VDS @ Tjmax 560 V RDS(on) 0.19 ID 21 A Feature * New revolutionary high voltage technology * Ultra low gate charge PG-TO263 * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance Type Package Ordering Code Marking SPB21N50C3 PG-TO263 Q67040-S4566 21N50C3 Maximum Ratings Parameter Symbol Value Unit SPB Continuous drain current ID A TC = 25 C 21 TC = 100 C 13.1 Pulsed drain current, tp limited by Tjmax ID puls 63 A Avalanche energy, single pulse EAS 690 EAR 1 Avalanche current, repetitive tAR limited by Tjmax IAR 21 A Gate source voltage VGS 20 V Gate source voltage AC (f >1Hz) VGS 30 Power dissipation, TC = 25C Ptot 208 Operating and storage temperature Tj , Tstg mJ ID=10A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=21A, VDD=50V Reverse diode dv/dt Rev. 2.3 7) dv/dt Page 1 http://store.iiic.cc/ W -55...+150 C 15 V/ns 2005-11-07 SPB21N50C3 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit VDS = 400 V, ID = 21 A, Tj = 125 C Thermal Characteristics Symbol Parameter min. typ. max. Thermal resistance, junction - case RthJC - - 0.6 Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.6 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area 3) - 35 - - - 260 Soldering temperature, reflow soldering, MSL1 Tsold K/W C 1.6 mm (0.063 in.) from case for 10s 4) Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=21A Values Unit min. typ. max. 500 - - - 600 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=1000A, VGS=VDS Zero gate voltage drain current I DSS VDS=500V, V GS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 2.3 RG A Tj=25C - 0.1 1 Tj=150C - - 100 VGS=20V, V DS=0V - - 100 VGS=10V, ID=13.1A Tj=25C - 0.16 0.19 Tj=150C - 0.54 - f=1MHz, open drain - 0.53 - Page 2 http://store.iiic.cc/ nA 2005-11-07 SPB21N50C3 Electrical Characteristics Parameter Transconductance Symbol gfs Conditions VDS2*ID*R DS(on)max, Values Unit min. typ. max. - 18 - S pF ID=13.1A Input capacitance Ciss VGS=0V, VDS=25V, - 2400 - Output capacitance Coss f=1MHz - 1200 - Reverse transfer capacitance Crss - 30 - - 87 - - 181 - Effective output capacitance,5) Co(er) VGS=0V, VDS=400V energy related Effective output capacitance,6) Co(tr) time related Turn-on delay time td(on) VDD=380V, VGS=0/10V, - 10 - Rise time tr ID=21A, - 5 - Turn-off delay time td(off) RG =3.6 - 67 - Fall time tf - 4.5 - - 10 - - 50 - - 95 - - 5 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=380V, ID=21A VDD=380V, ID=21A, nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=380V, ID=21A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AR AV 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 4Soldering temperature for TO-263: 220C, reflow 5C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 6C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 7I <=I , di/dt<=200A/us, V SD D DClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch. Rev. 2.3 Page 3 http://store.iiic.cc/ 2005-11-07 SPB21N50C3 Electrical Characteristics Parameter Symbol Inverse diode continuous IS Conditions Values Unit min. typ. max. - - 21 - - 63 TC=25C A forward current Inverse diode direct current, I SM pulsed Inverse diode forward voltage VSD VGS =0V, IF=IS - 1 1.2 V Reverse recovery time t rr VR =380V, IF =IS , - 450 - ns Reverse recovery charge Q rr diF/dt=100A/s - 9 - C Peak reverse recovery current I rrm - 60 - A Peak rate of fall of reverse dirr /dt - 1200 - A/s Tj=25C recovery current Typical Transient Thermal Characteristics Value Symbol Unit Symbol SPB Rth1 0.00769 Rth2 Value Unit SPB K/W Cth1 0.0003763 0.015 Cth2 0.001411 Rth3 0.029 Cth3 0.001931 Rth4 0.114 Cth4 0.005297 Rth5 0.136 Cth5 0.012 Rth6 0.059 Cth6 0.091 Tj R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.3 Page 4 http://store.iiic.cc/ 2005-11-07 SPB21N50C3 1 Power dissipation 2 Power dissipation FullPAK Ptot = f (TC) Ptot = f (TC) 240 SPP21N50C3 35 W W 200 25 160 Ptot Ptot 180 140 20 120 15 100 80 10 60 40 5 20 0 0 20 40 60 80 100 120 C 0 0 160 20 40 60 80 100 120 TC 3 Safe operating area 4 Safe operating area FullPAK ID = f ( VDS ) ID = f (VDS) parameter : D = 0 , TC=25C parameter: D = 0, TC = 25C 10 2 C 160 TC 10 2 10 1 10 1 ID A ID A 10 0 10 -1 10 -2 0 10 Rev. 2.3 10 0 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 1 10 -1 10 2 10 V VDS 10 -2 0 10 3 Page 5 http://store.iiic.cc/ tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 1 10 2 10 V VDS 2005-11-07 3 SPB21N50C3 5 Transient thermal impedance 6 Transient thermal impedance FullPAK ZthJC = f (tp) ZthJC = f (tp) parameter: D = tp/T parameter: D = tp/t 10 0 10 1 K/W K/W 10 0 ZthJC ZthJC 10 -1 10 -2 10 -3 10 -4 -7 10 10 -1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -6 10 -5 10 -4 10 -3 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 s tp 10 10 -3 -6 10 0 10 -5 10 -4 10 -3 10 -2 -1 1 s 10 tp 7 Typ. output characteristic 8 Typ. output characteristic ID = f (VDS); Tj =25C ID = f (VDS); Tj =150C parameter: tp = 10 s, VGS parameter: tp = 10 s, VGS 70 40 A A 50 10 Vgs = 20V Vgs = 7V Vgs = 6.5V 30 ID ID Vgs = 6V Vgs = 20V Vgs = 7V Vgs = 6V Vgs = 5.5V 25 Vgs = 5V 40 20 Vgs = 5.5V 30 15 Vgs = 5V 20 Vgs = 4.5V 10 Vgs = 4V Vgs = 4.5V 10 5 Vgs = 4V 0 0 5 10 15 0 0 25 V VDS Rev. 2.3 5 10 15 25 V VDS Page 6 http://store.iiic.cc/ 2005-11-07 SPB21N50C3 9 Typ. drain-source on resistance 10 Drain-source on-state resistance RDS(on)=f(ID) RDS(on) = f (Tj) parameter: Tj=150C, VGS parameter : ID = 13.1 A, VGS = 10 V 1.5 1.1 SPP21N50C3 0.9 RDS(on) RDS(on) Vgs = 4V Vgs = 4.5V Vgs = 5V Vgs = 5.5V Vgs = 6V Vgs = 20V 0.8 0.7 0.6 0.9 0.5 0.4 0.3 0.6 98% 0.2 typ 0.1 0.3 0 5 10 15 20 25 30 A ID 0 -60 40 -20 20 60 100 C 180 Tj 11 Typ. transfer characteristics 12 Typ. gate charge ID = f ( VGS ); VDS 2 x ID x RDS(on)max VGS = f (Q Gate) parameter: ID = 21 A pulsed parameter: tp = 10 s 70 16 A V SPP21N50C3 Tj = 25C 12 VGS 50 ID Tj = 150C 0,2 VDS max 10 40 0,8 VDS max 8 30 6 20 4 10 0 0 2 2 4 6 V 0 0 10 40 60 80 100 nC 140 QGate VGS Rev. 2.3 20 Page 7 http://store.iiic.cc/ 2005-11-07 SPB21N50C3 13 Forward characteristics of body diode 14 Avalanche SOA IF = f (VSD) IAR = f (tAR) parameter: Tj , tp = 10 s par.: Tj 150 C 10 2 SPP21N50C3 20 A A IF IAR 10 1 Tj(Start)=25C 10 10 0 Tj = 25 C typ Tj(Start)=125C 5 Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 0 -3 10 3 10 -2 10 -1 10 0 10 1 10 2 s 10 tAR VSD 15 Avalanche energy 16 Drain-source breakdown voltage EAS = f (Tj) V(BR)DSS = f (Tj) 4 par.: ID = 10 A, VDD = 50 V 750 600 600 570 V V(BR)DSS mJ EAS 550 500 450 560 550 540 400 530 350 520 300 510 250 500 200 490 150 480 100 470 50 460 0 20 40 60 80 100 120 C 450 -60 160 Tj Rev. 2.3 SPP21N50C3 -20 20 60 100 C 180 Tj Page 8 http://store.iiic.cc/ 2005-11-07 SPB21N50C3 17 Avalanche power losses 18 Typ. capacitances PAR = f (f ) C = f (VDS) parameter: EAR =1mJ parameter: VGS =0V, f=1 MHz 10 5 500 pF W 10 4 C PAR Ciss 300 10 3 200 10 2 100 10 1 0 4 10 10 5 10 Hz 10 0 0 6 Coss Crss 100 200 300 V 500 VDS f 19 Typ. Coss stored energy Eoss=f(VDS) 10 E oss J 6 4 2 0 0 Rev. 2.3 50 100 150 200 250 300 350 400 V 500 VDS Page 9 http://store.iiic.cc/ 2005-11-07 SPB21N50C3 Definition of diodes switching characteristics Rev. 2.3 Page 10 http://store.iiic.cc/ 2005-11-07 63%211& PG-TO263-3-2, PG-TO263-3-5, PG-TO263-3-22 Rev. 2.3 PDJH http://store.iiic.cc/ 511-07 SPB21N50C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.3 Page 12 http://store.iiic.cc/ 2005-11-07