Discrete POWER & Signal Technologies Be MNS CAIDAS TRORS na DO-35 High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 for characteristics. Absolute Maxi mu m Rati ngs* TA = 25C unless otherwise noted Symbol Parameter Value Units Wiy Working Inverse Voltage 50 Vv lo Average Rectified Current 200 mA lr DC Forward Current 400 mA it Recurrent Peak Forward Current 600 mA ijsurge) Peak Forward Surge Current Pulse width = 1.0 second 1.0 A Pulse width = 1.0 microsecond 4.0 A Tstg Storage Temperature Range -65 to +200 C Ty Operating Junction Temperature 175 C NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Symbol Characteristic Max Units 1N4454 Pp Total Device Dissipation 500 mW Derate above 25C 3.33 mW/C Resa Thermal Resistance, Junction to Ambient 300 C/W 1997 Fairchild Semiconductor Corporation VSVUNLElectrical Characteristics High Conductance Ultra Fast Diode TA = 25C unless otherwise noted (continued) Symbol Parameter Test Conditions Min | Max | Units By Breakdown Voltage IR=5.0uA 75 Vv lr Reverse Current Va=50V 100 nA Ve= 50 V, Ta= 150C 100 uA Ve Forward Voltage IF = 250 pA 505 575 mV lp=1.0mA 550 650 mV lp=2.0mA 610 710 mV lz-=10mA 1.0 Vv Co Diode Capacitance Va=0, f = 1.0 MHz 40 pF TrR Reverse Recovery Time l-= 10 mA, Vr= 1.0 V, 4.0 ns lr =1.0 mA, R, = 100 2 VSVUNL