ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
HIGH DENSITY MOUNTING
HIGH VOLTAGE DARLINGTON
OPTICALLY COUPLED ISOLATORS
APPROVALS
lUL recognised, File No. E91231
DESCRIPTION
The IS452 is an optically coupled isolator
consisting of an infrared light emitting diode
and a high voltage NPN silicon photo
darlington which has an integral base-emitter
resistor to optimise switching speed and
elevated temperature characteristics in a space
efficient dual in line plastic package.
FEATURES
lMarked as FPH1.
lCurrent Transfer Ratio MIN. 1000%
lHigh collector-emitter voltage, Vceo=300V
lIsolation Voltage (3.75kVRMS ,5.3kVPK )
lAll electrical parameters 100% tested
lDrop in replacement for Sharp PC452
APPLICATIONS
lComputer terminals
lIndustrial systems controllers
lMeasuring instruments
lSignal transmission between systems of
different potentials and impedances
IS452
Dimensions in mm
17/10/03
DB92862l-AAS/A6
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA
Reverse Voltage 6V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO 300V
Emitter-collector Voltage BVECO 0.1V
Collector Current 150mA
Power Dissipation 150mW
POWER DISSIPATION
Total Power Dissipation 170mW
(derate linearly 2.26mW/°C above 25°C)
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF)1.2 1.4 VIF = 10mA
Reverse Current (IR)10 µA VR = 4V
Output Collector-emitter Breakdown (BVCEO)300 VIC = 0.1mA
Emitter-collector Breakdown (BVECO) 0.1 VIE = 10uA
Collector-emitter Dark Current (ICEO)200 nA VCE = 200V
Coupled Current Transfer Ratio (CTR) 1000 %1mA IF , 2V VCE
Collector-emitter Saturation VoltageVCE (SAT) 1.2 V20mA IF , 100mA IC
Input to Output Isolation Voltage VISO 3750 VRMS See note 1
5300 VPK See note 1
Input-output Isolation Resistance RISO 5x10 10 ΩVIO = 500V (note 1)
Output Rise Time tr 418 µsVCE = 2V ,
Output Fall Time tf 318 µsIC = 2mA, RL = 100Ω
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
Note 1 Measured with input leads shorted together and output leads shorted together.
17/10/03
DB92862l-AAS/A6
12/07/01 Appendix to Mini Flat Pack FPH-AAS/A1
TAPING DIMENSIONS
Description Symbol Dimensions in mm ( inches )
Tape wide W 12 ± 0.3 ( .47 )
Pitch of sprocket holes P0 4 ± 0.1 ( .15 )
Distance of compartment F
P2 5.5 ± 0.1 ( .217 )
2 ± 0.1 ( .079 )
Distance of compartment to compartment P1 8 ± 0.1 ( .315 )
12/07/01 Appendix to Mini Flat Pack FPH-AAS/A1
CHARACTERISTIC CURVES
Fig.1 Forward Current vs. Fig.2 Collector Power Dissipation vs.
Ambient Temperature
Fig.4 Forward Current vs. Forward
0
Collector-emitter Voltage
Fig.6 Collector Current vs.
Current
Fig.5 Current Transfer Ratio vs. Forward
Fig.3 Collector-emitter saturation
Voltage vs. Forward current
Collector power dissipation Pc (mW)
Current transfer ratio CTR (%)
Collector current Ic (mA)
Forward current (mA) Collector-emitter voltage V (V)
Ambient temperature Ta ( C) Ambient temperature Ta ( C)
60
0
50
100
150
200
0
0
0.1
010
0
0
5
Ambient Temperature
oo
Voltage
10mA
1.5mA
1mA
VCE=2V
1000
2000
3000
5000
4
3
2
1
50
40
30
20
10
Ic=5mA
10mA
30mA
50mA
70mA
2 4 531
4000
3mA
IF=0.5mA
100
1
80
60
40
20
1.5mA
CE
7000
6000
12345
2mA
2.5mA
0.5
1.5
2.5
4.5
3.5 100mA
PC (MAX.)
5mA
Forward current (mA)
0.5
1
100
10
1.91.3
Forward voltage (V)
0.90.7 1.1 1.5 1.7
60 C
100 C
80 C
o
o
o
o
40 C
o
20 C
Forward current I F(mA)
Forward current IF(mA)
Collector-emitter saturation voltage
VCE(sat) (V)
05025 75 100 125-55 -55 12525050 75 100
12/07/01 Appendix to Mini Flat Pack FPH-AAS/A1
CHARACTERISTIC CURVES
Fig.7 Relative Current Transfer Ratio
vs. Ambient Temperature Fig.8 Collector-emitter Saturation Voltage
Fig.9 Collector Dark Current vs.
Temperature Fig.10 Response Time vs. Load
CE
vs. Ambient Temperature
0
10
1
Ambient temperature Ta ( C)
Relative current transfer ratio (%)
Collector-emitter saturation voltage
V (sat) (V)
Ambient temperature Ta ( C)
100
1.0
10.1
1000
OO
Resistance
Voltage gain Av (dB)
-25
0
Frequency f (kHz)
500
Fig.11 Frequency Response
80604020
0.8
0.6
0.4
0.2
-5
-10
-15
-20
1001010.1
VCE=2V
IC=20mA
Ta=25 C
RL=1k 100 10
2
5
10
20
50
100
200
500
Response time ( s)
Load resistance RL (k )
VCE=2V
IC=20mA
Ta=25 C
Test Circuit for Response Time
Test Circuit for Frequency Response
Input
Output
Input
Output
Vcc
td
tr tf
ts 90%
10%
Output
Vcc
Ambient temperature Ta ( C)
10080604020
O
1
1000
100
Collector dark current I CEO (nA)
tr
tf
td
ts
20
1.0
10040 60 80
0.8
0.6
0.4
0.2
1.2
RDRL
RL
RD
IF=1mA
VCE=2V
10
VCE=200V
IF=20mA
IC=100mA
O
O
1.2
12/07/01 Appendix to Mini Flat Pack FPH-AAS/A1
TEMPERATURE PROFILE OF SOLDERING REFLOW
(1) One time soldering reflow is recommended within the condition of temperature and time profile
shown below.
30 seconds
1 minute
2 minutes 1.5 minutes 1 minute
25 C
180 C
200 C
230 C
(2) When using another soldering method such as infrated ray lamp, the temperature may rise
partially in the mold of the device.
Keep the temperature on the package of the device within the condition of above (1).
