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FQT5P10
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristi cs
Symbol Parameter FQT5P10 Unit
VDSS Drain-Source Volt age -100 V
IDDrain Current - Continuous (TC = 25°C) -1.0 A
- Continuous (TC = 70°C) -0.8 A
IDM Drain Current - Pulsed (Note 1) -4.0 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 55 mJ
IAR Avalanche Current (Note 1) -1.0 A
EAR Repetitive Avalanche Energy (Note 1) 0.2 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) -6.0 V/ns
PDPower Dissipation (TC = 25°C) 2.0 W
- Derate above 25°C 0.016 W/°C
TJ, TSTG Operating and Storage Temperat ure Range -55 to +150 °C
TLMaximum lead temperature for soldering purposes,
1/8" from case for 5 seconds 300 °C
Symbol Parameter Typ Max Unit
RθJA Thermal Resistance, Junction-to-Ambient * -- 62.5 °C/W
* When mounted on the minimum pad size recommended (PCB Mount)
SOT-223
G
D
S
S
D
G
FQT5P10 P-Channel MOSFET
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
•-1.0 A, -100 V, RDS(on)=1.05 Ω(Max.) @VGS=-10 V, ID=-0.5 A
•Low Gate Charge (Typ. 6.3 nC)
•Low Crss (Typ. 18 pF)
•100% Avalanche Tested
March 2013
P-Channel QFET® MOSFET
-100 V, -1.0 A, 1.05 Ω
www.fairchildsemi.com
©2002 Fairchild Semiconductor Corporation
FQT5P10 Rev. C0
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 83mH, IAS = -1.0A , VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -4.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pu lse width ≤300µs, Duty cycle ≤2%
5. Essentially independent of operating temperature
Symbol Parame ter Test Condit ions Min Typ Max Unit
Off Characteristics
BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = -250 µA-100 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient ID = -250 µA, Referenced to 25°C -- -0.1 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = -100 V, VGS = 0 V -- -- -1 µA
VDS = -80 V, TC = 125°C -- -- -10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA
On Characteri st ics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA-2.0 -- -4.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = -10 V, ID = -0.5 A -- 0.82 1.05 Ω
gFS Forward Transconductance VDS = -40 V, ID = -0.5 A -- 1.4 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 190 250 pF
Coss Output Capacitance -- 70 90 pF
Crss Reverse Transfer Capacit ance -- 18 25 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = -50 V, ID = -4.5 A,
RG = 25 Ω
-- 9 30 ns
trTurn-On Rise Time -- 70 150 ns
td(off) Turn-Off De l a y Time -- 1 2 3 5 ns
tfTurn-Off Fa ll Time -- 30 70 ns
QgTotal Gate Charge VDS = -80 V, ID = -4.5 A,
VGS = -10 V
-- 6.3 8.2 nC
Qgs Gate-Source Charge -- 1.7 -- nC
Qgd Gate-Drain Charge -- 3.0 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- -1.0 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -4.0 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = -1.0 A -- -- -4.0 V
trr Reverse Recover y Time VGS = 0 V, IS = -4.5 A,
dIF / dt = 100 A/µs
-- 85 -- ns
Qrr Reverse Recovery Charge -- 0.27 -- µC
FQT5P10 P-Channel MOSFET
www.fairchildsemi.com
©2002 Fairchild Semiconductor Corporation
FQT5P10 Rev. C0
012345678
0
2
4
6
8
10
12
VDS = -50V
VDS = -20V
VDS = -80V
※ Note : ID = -4.5 A
-VGS , Gate-Source Voltage [V]
QG, To tal Ga t e Charge [nC]
10-1 100101
0
50
100
150
200
250
300
350
400
450
500 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 M H z
Crss
Coss
Ciss
Capacitance [pF]
-VDS, Drain-Source Voltage [V]
0.0 0.5 1.0 1.5 2.0 2.5 3.0
10-1
100
150℃
※ No te s :
1. V GS = 0V
2. 250μs Pulse T est
25℃
-IDR , Re v e rse D r a in C u rr en t [A ]
-VSD , S o u rc e- Dr ain V o ltag e [V ]
036912
0.0
0.5
1.0
1.5
2.0
2.5
※ N o te : TJ = 25℃
VGS = - 20V
VGS = - 10V
RDS(on) [Ω],
Drain-S ource O n-Resistance
-ID , Drain C u r re nt [A ]
246810
10-1
100
150℃
25℃
-55℃※ No tes :
1. V DS = -40V
2. 250μs Pulse T est
-ID , D ra in C u rre n t [A ]
-VGS , G a te -S o ur ce V o ltag e [V ]
10-1 100101
10-2
10-1
100
V GS
T op : - 1 5 .0 V
-10 .0 V
-8.0 V
-7.0 V
-6.5 V
-5.5 V
-5.0 V
B otto m : -4.5 V
※ No te :
1. 250μs Pulse T est
2. T C = 25℃
-ID, Drain C urrent [A]
-VDS, Drain-Source V oltage [V]
Typical Characteristics
Figure 5. C apacitance C haracterist ics Figure 6. Ga te Charge Characteris ti cs
Figu re 3. On-R esistance Variat ion vs.
Drain Current and Gate Voltage Figure 4. Body Diode Fo rwa rd Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Characteri st ic s
FQT5P10 P-Channel MOSFET
www.fairchildsemi.com
©2002 Fairchild Semiconductor Corporation
FQT5P10 Rev. C0
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
※ Notes :
1. V GS = -10 V
2. ID = -0 .5 A
RDS(ON) , (Norm alized)
Drain-Source On-Resistance
TJ, Junction Tem perature [oC]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
※
N o te s :
1. V GS = 0 V
2. ID = -250 μA
-BV DSS , ( N o rma lize d )
D rain-S ource B reakd own V oltage
TJ, Junction Tem p erature [oC]
10-5 10-4 10-3 10-2 10-1 100101102103
10-1
100
101
102
※ Notes :
1. Z θJC(t) = 62 .5 ℃/W M a x .
2 . Du ty Fa c to r , D=t1/t2
3. T JM - TC = PDM * ZθJC(t)
s in g le p u ls e
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJC
(t), Therm al R esponse
t1, Square W ave Pulse Duration [sec]
25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
-ID, D r ain Curre n t [A ]
TC, Case Temperature [℃
]
10-1 100101102
10-2
10-1
100
101
100 ms
DC
10 ms 1 ms100 µs
Operation in This Area
is Limited by R DS(on)
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Sing le P u ls e
-ID, D ra in Cur re n t [A ]
-VDS, Drain-Source Voltage [V]
Typical Characteristics (Continued)
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figu re 7. Breakdo w n Vol ta ge Variation
vs. Temperature Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Tr ans ient Ther m al Res pons e Cur ve
t1
PDM
t2
FQT5P10 P-Channel MOSFET
www.fairchildsemi.com
©2002 Fairchild Semiconductor Corporation
FQT5P10 Rev. C0
Charge
VGS
-10V Qg
Qgs Qgd
-3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
VGS
-10V Qg
Qgs Qgd
-3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
VDS
VGS 10%
90%
td(on) tr
ton toff
td(off) tf
VDD
-10V
VDS RL
DUT
RG
VGS
VDS
VGS 10%
90%
td(on) tr
ton toff
td(off) tf
VDD
-10V
VDS RL
DUT
RG
VGS
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
-10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
-10V DUT
RG
LL
ID
ID
t p
Gate Charge Test Circuit & W aveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & W aveforms
FQT5P10 P-Channel MOSFET
www.fairchildsemi.com
©2002 Fairchild Semiconductor Corporation
FQT5P10 Rev. C0
Peak Diode Recovery dv /d t Test Ci rcuit & Wavefor m s
DUT
VDS
+
_
Driver
RGCompliment of DUT
(N-Channel)
VGS • dv/dt controlled by RG
•I
SD con trolled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
DUT
VDS
+
_
Driver
RGCompliment of DUT
(N-Channel)
VGS • dv/dt controlled by RG
•I
SD con trolled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
FQT5P10 P-Channel MOSFET
www.fairchildsemi.com
©2002 Fairchild Semiconductor Corporation
FQT5P10 Rev. C0
Dimensions in Millimeters
Package Dimensions
3.00 ±0.10
7.00 ±0.30
0.65 ±0.20
0.08MAX
3.50 ±0.20
1.60 ±0.20
(0.46)
(0.89)
(0.60) (0.60)
1.75 ±0.20
0.70 ±0.10
4.60 ±0.25
6.50 ±0.20
(0.95) (0.95)
2.30 TYP
0.25
MAX1.80
0°~10°
+0.10
–0.05
0.06 +0.04
–0.02
SOT-223
FQT5P10 P-Channel MOSFET
www.fairchildsemi.com
©2002 Fairchild Semiconductor Corporation
FQT5P10 Rev. C0
FQT5P10 P-Channel MOSFET
www.fairchildsemi.com
©2002 Fairchild Semiconductor Corporation
FQT5P10 Rev. C0
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Definition of Terms
2Cool™
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®*
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®
™
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Rev. I64
®
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