SIR-34ST3F
Sensors
Rev.B 1/3
Infrared light emitting diode, top view type
SIR-34ST3F
The SIR-34ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous
efficie ncy and a 950nm spectrum suit able for silicon detec tors. It is small and at the sa me time has a wide radiation a ngle,
marking it ideal for compact optical control equipment.
zA pplications
Optical control equi pment
Light sou rce for remote control devi ces
zFeatures
1) Compact (φ3.1mm).
2) High efficiency, high output PO=8.0mW (IF=50mA).
3) Wide radiation angle θ=27°.
4) Emission spectrum well suited to silicon detectors
(λP=950nm).
5) Good current-optical output linearity .
6) Long life, high rel iability.
zDimensions (Unit : mm)
Notes:
1. Unspecified tolerance
shall be ±0.2.
2. Dimension in parenthesis are
show for reference.
1
1
Anode 2
2
Cathode
1.1
Max.1
2.5±1
(2.5)
5.2±0.3
Min.24
φ3.1±0.2
φ3.8±0.3
φ3.5
2− 0.5
4−0.6
zA bsolute maximum ratings (Ta = 25°C)
Parameter Symbol
PD
IF
IFP∗
VR
Topr
Tstg
Limits
−25 to +85
−40 to +85
100
5
160
0.5
Unit
mA
V
mW
A
°C
°C
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
∗ Pulse width=0.1msec, duty ratio 1%
SIR-34ST3F
Sensors
Rev.B 2/3
zElectrical and optical characteristics (Ta = 25°C)
Parameter Symbol
PO
IE
fC
IR
VF
∆λ
λ
P
θ
1 / 2
tr·tf
Min.
−
3.5
−
−
−
−
−
−
−
Typ.
8.0
−
1.3
−
950
40
±27
1.0
1.0
Max.
−
1.6
17.6
10
−
−
−
−
−
Unit
mW
mW/sr
IF=50mA
IF=50mA
IF=100mA
VR=3V
IF=50mA
IF=50mA
IF=50mA
IF=50mA
IF=50mA
µA
nm
nm
V
deg
MHz
µs
Conditions
Optical output
Emitting strength
Forward voltage
Reverse current
Peak light emitting wavelength
Spectral line half width
Half-viewing angle
Pesponse time
Cut-off frequency
zElectrical and optical characteristic curves
Fig.1 Forward current falloff
FORWARD CURRENT : I
F
(mA)
AMBIENT TEMPERATURE : Ta (°C)
0 20406080100
0
20
40
60
80
100
FORWARD CURRENT : I
F
(mA)
FORWARD VOLTAGE : V
F
(V)
0
10
20
30
40
50
012
75°C
50°C
25°C
0°C
−25°C
Fig.2 Forward current vs. forward voltage
RELATIVE OPTICAL OUTPUT : P
O
(%)
OPTICAL WAVELENGTH : λ (nm)
900 920 940 960 980 1000
0
20
40
60
80
100
Fig.3 Wavelength
Fig.4 Emitting strength vs.
forward current
EMITTING STRENGTH : I
E
(mW/sr)
FORWARD CURRENT : I
F
(mA)
200 406080100
0
10
20
30
40
50
Fig.5 Relative emitting strength
vs.ambient temperature
RELATIVE EMITTING STRENGTH : I
E
(%)
AMBIENT TEMPERATURE : Ta (°C)
0−20 20 8040 60
10
20
50
100
200
SIR-34ST3F
Sensors
Rev.B 3/3
0100 80 60 40 20
ANGULAR DISPLACEMENT : θ (deg)RELATIVE EMITTING STRENGTH (%)
Fig.6 Directional pattern
10°
100
20°30°40°50°60°70°80°90°
10°0°
20°
30°
40°
50°
60°
70°
80°
90°
20
40
60
80
RELATIVE EMITTING STRENGTH (%)
Notes
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Appendix1-Rev2.0
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Appendix
