Power Transistors 2SD1445A Silicon NPN epitaxial planar type For power amplification, power switching and low-voltage switching Complementary to 2SB0948A 16.70.3 14.00.5 Absolute Maximum Ratings TC = 25C 2.70.2 4.20.2 * Low collector-emitter saturation voltage VCE(sat) * High-speed switching * Satisfactory linearity of forward current transfer ratio hFE * Large collector current IC * Full-pack package which can be installed to the heat sink with one screw. 5.50.2 3.10.1 Parameter Symbol Rating Unit 2.540.3 VCBO 50 V 5.080.5 Collector-emitter voltage (Base open) VCEO 40 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 10 A Peak collector current ICP 20 A Collector power PC 40 W Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Ta = 25C 0.5+0.2 -0.1 0.80.1 Collector-base voltage (Emitter open) dissipation 1.30.2 1.40.1 Solder Dip (4.0) Features 4.20.2 7.50.2 0.70.1 Unit: mm 10.00.2 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package 1 2 3 2.0 Electrical Characteristics TC = 25C 3C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = 10 mA, IB = 0 Conditions Min Typ Max Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 50 A Emitter-base cutoff current (Collector open) IEBO VEB = 5 V, IC = 0 50 A hFE1 40 Unit V VCE = 2 V, IC = 0.1 A 45 hFE2 * VCE = 2 V, IC = 3 A 60 Collector-emitter saturation voltage VCE(sat) IC = 10 A, IB = 0.33 A 0.6 V Base-emitter saturation voltage VBE(sat) IC = 10 A, IB = 0.33 A 1.5 V Forward current transfer ratio 260 VCE = 10 V, IC = 0.5 A, f = 10 MHz 120 MHz Collector output capacitance (Common base, input open circuited) Cob VCB = 10 V, IE = 0, f = 1 MHz 200 pF Turn-on time ton IC = 3 A, IB1 = 0.1 A, IB2 = - 0.1 A, 0.3 s Storage time tstg VCC = 20 V 0.4 s Fall time tf 0.1 s Transition frequency fT Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R Q P hFE2 60 to 120 90 to 180 130 to 260 Publication date: January 2003 SJD00195CED 1 2SD1445A 60 TC = 25C 90 mA 80 mA 8 (1) 40 VCE(sat) IC IB = 100 mA Collector current IC (A) Collector power dissipation PC (W) IC VCE 10 (1) TC = Ta (2) With a 100 x 100 x 2 mm Al heat sink (3) Without heat sink (PC = 2.0 W) Collector-emitter saturation voltage VCE(sat) (V) PC Ta 80 20 70 mA 60 mA 50 mA 6 40 mA 4 30 mA 20 mA 2 10 mA (2) (3) 0 0 40 80 120 160 0 1 4 6 hFE IC IC / IB = 20 TC = 100C 1 25C -25C 0.1 0.01 0.1 1 10 Collector current IC (A) fT I C VCE = 10 V 10 1 000 VCE = 10 V f = 10 MHz TC = 25C 25C -25C TC = 100C 0.1 1 TC = 100C 25C 100 -25C 10 1 0.1 10 Collector current IC (A) ICP 1 ton tstg tf 0.1 0 1 2 3 4 Collector current IC (A) 5 10 t = 10 ms DC t=1s 1 0.1 0.01 1 10 100 1 000 Collector-emitter voltage VCE (V) SJD00195CED 10 1 0.1 1 Collector current IC (A) Non repetitive pulse TC = 25C IC 100 0.1 0.01 10 Safe operation area 100 Pulsed tW = 1 ms Duty cycle = 1% IC / IB = 30 (IB1 = -IB2) VCC = 20 V TC = 25C 10 1 Collector current IC (A) ton, tstg, tf IC 100 Transition frequency fT (MHz) 1 000 1 0.01 5 VBE(sat) IC Collector current IC (A) Turn-on time ton , Storage time tstg , Fall time tf (s) 3 Collector-emitter voltage VCE (V) 0.01 0.1 2 2 Ambient temperature Ta (C) Forward current transfer ratio hFE Base-emitter saturation voltage VBE(sat) (V) 0 IC / IB = 20 10 10 2SD1445A Rth t Thermal resistance Rth (C/W) 103 (1)Without heat sink (2)With a 100 x 100 x 2 mm Al heat sink 102 (1) (2) 10 1 10-1 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) SJD00195CED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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