ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VRRM
= 4500
V
IF = 110
A
Die size: 14.3 x 14.3 mm
Doc. No. 5SYA 1674-00 Jan 08
• Ultra low losses
• Fast and soft reverse-recovery
• Large SOA
• Passivation: SIPOS and Silicon Nitride
Maximum rated values 1)
Parameter Symbol Conditions min max Unit
Repetitive peak reverse voltage VRRM 4500
V
Continuous forward current IF 110 A
Repetitive peak forward current IFRM Limited by Tvjmax 220 A
Junction temperature Tvj -40 125 °C
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
Diode characteristic values 2)
Parameter Symbol Conditions min typ max Unit
Tvj = 25 °C
3.05 V
Continuous forward voltage VF IF = 110 A Tvj = 125 °C
3.50 V
Tvj = 25 °C
3 µA
Continuous reverse current IR VR = 4500 V Tvj = 125 °C
2 4 mA
Tvj = 25 °C
120 A
Peak reverse recovery current Irr Tvj = 125 °C
132 A
Tvj = 25 °C
90 µC
Recovered charge Qrr Tvj = 125 °C
140 µC
Tvj = 25 °C
1140
ns
Reverse recovery time trr Tvj = 125 °C
1730
ns
Tvj = 25 °C
140 mJ
Reverse recovery energy Erec
IF = 110 A,
VR = 2800 V,
di/dt = 350 A/µs,
Lσ = 3000 nH,
Inductive load,
Switch:
2x 5SMY12N4500
Tvj = 125 °C
235 mJ
2) Characteristic values according to IEC 60747 - 2
Fast-Diode Die
5SLY 12N4500
5SLY 12N4500
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1674-00 Jan 08 page 2 of 3
0
55
110
165
220
0 1 2 3 4 5
VF [V]
IF [A]
25 °C
125 °C
0
50
100
150
200
250
300
350
055 110 165 220 275 330
IF [A]
Erec [mJ], Irr [A], Qrr [µC]
VCC = 2800 V
di/dt = 300 A/µs
Tvj = 125 °C
Lσ = 3 µH
Erec
Qrr
Irr
Fig. 1 Typical diode forward characteristics Fig. 2 Typical reverse recovery characteristics
vs. forward current
-150
-100
-50
0
50
100
150
0 1 2 3 4 5 6
time [µs]
IR [A]
-3000
-2500
-2000
-1500
-1000
-500
0
VR [V]
IR
VR
VCC = 2800 V
IF = 110 A
di/dt = 300 A/µs
Tvj = 125 °C
Lσ = 3 µH
0
50
100
150
200
250
300
350
400
450
500
0 100 200 300 400 500 600
di/dt [A/µs]
Erec [mJ], Irr [A], Qrr [µC]
VCC = 2800 V
IF = 110 A
Tvj = 125 °C
Lσ = 3 µH Erec
Irr
Qrr
Fig. 3 Typical diode reverse recovery behaviour Fig. 4 Typical reverse recovery vs. di/dt
5SLY 12N4500
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA 1674-00 Jan 08
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Mechanical properties
Parameter Unit
Overall die
L x W 14.3 x 14.3 mm
exposed
front metal
L x W 9.0 x 9.0 mm
Dimensions
thickness 570 ± 15 µm
front (A) AlSi1 + Al 4 + 8 µm
Metallization 3) back (K) AlSi1 + TiNiAg 1.8 + 1.2 µm
3) For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
Outline Drawing
Note : All dimensions are shown in mm
This product has been designed and qualified for Industrial Level.
