
AUIRF3808S
2 2015-11-13
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)
Starting TJ = 25°C, L = 0.130mH, RG = 25, IAS = 82A. (See fig.12)
ISD 82A, di/dt 310A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
C
oss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application
note #AN-994
R is measured at TJ of approximately 90°C
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.086 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 5.9 7.0 m VGS = 10V, ID = 82A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 100 ––– ––– S VDS = 25V, ID = 82A
IDSS Drain-to-Source Leakage Current ––– ––– 25 µA VDS = 75V, VGS = 0V
––– ––– 250 VDS = 60V,VGS = 0V,TJ =150°C
IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– 150 220
nC
ID = 82A
Qgs Gate-to-Source Charge ––– 31 47 VDS = 60V
Qgd Gate-to-Drain Charge ––– 50 76 VGS = 10V
td(on) Turn-On Delay Time ––– 16 –––
ns
VDD = 38V
tr Rise Time ––– 140 ––– ID = 82A
td(off) Turn-Off Delay Time ––– 68 ––– RG= 2.5
tf Fall Time ––– 120 ––– VGS = 10V
LD Internal Drain Inductance ––– 4.5 –––
nH
Between lead,
6mm (0.25in.)
LS Internal Source Inductance ––– 7.5 ––– from package
and center of die contact
Ciss Input Capacitance ––– 5310 –––
pF
VGS = 0V
Coss Output Capacitance ––– 890 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 130 ––– ƒ = 1.0MHz, See Fig.5
Coss Output Capacitance ––– 6010 ––– VGS = 0V,VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 570 ––– VGS = 0V,VDS = 60V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance (Time Related) ––– 1140 ––– VGS = 0V,VDS = 0V to 60V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 106
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 550 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 82A,VGS = 0V
trr Reverse Recovery Time ––– 93 140 ns TJ = 25°C ,IF = 82A
Qrr Reverse Recovery Charge ––– 340 510 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)