General Purpose, Low Current
NPN Silicon Bipolar Transistor
Technical Data
Features
• General Purpose NPN
Bipolar Transistor
Optimized for Low Current,
Low Voltage Applications at
900 MHz, 1.8 GHz, and
2.4 GHz
• Performance (5 V, 5 mA)
0.9 GHz: 1 dB NF, 15.5 dB GA
1.8 GHz: 1.4 dB NF, 10.5 dB GA
2.4 GHz: 1.9 dB NF, 9 dB GA
• Characterized for 3, 5, and
8 V Use
• Miniature 3-lead SOT-323
(SC-70) Plastic Package
• High Breakdown Voltage
(can be operated up to 10 V)
Applications
• LNA, Oscillator, Driver
Amplifier, Buffer Amplifier,
and Down Converter for
Cellular and PCS Handsets
and Cordless Telephones
• LNA, Oscillator, Mixer, and
Gain Amplifier for Pagers
• Power Amplifier and
Oscillator for RF-ID Tag
• LNA and Gain Amplifier for
GPS
• LNA for CATV Set-Top Box
AT-41532
Description
Agilent’s AT-41532 is a general
purpose NPN bipolar transistor
that has been optimized for
maximum ft at low voltage
operation, making it ideal for use
in battery powered
applications in cellular/PCS
and other wireless markets.
The AT-41532 uses the miniature
3-lead SOT-323 (SC-70) plastic
package.
Optimized performance at 5 V
makes this device ideal for use in
900 MHz, 1.8 GHz, and 2.4 GHz
systems. Typical amplifier design
at 900 MHz yields 1 dB NF and
15.5 dB associated gain at 5 V and
5 mA bias. High gain capability at
1 V and 1 mA makes this device a
good fit for 900 MHz pager
applications. A good noise
match near 50 ohms at 900 MHz
makes this a very user-friendly
device. Moreover, voltage
breakdowns are high enough to
support operation at 10 V.
The AT-41532 belongs to Agilent’s
AT-4XXXX series bipolar
transistors. It exhibits excellent
device uniformity, performance,
and reliability as a result of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication process.
3-Lead SC-70 (SOT-323)
Surface Mount Plastic
Package
Pin Configuration
BASE EMITTER
COLLECTOR
41
2
AT-41532 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum[1]
VEBO Emitter-Base Voltage V 1.5
VCBO Collector-Base Voltage V 20
VCEO Collector-Emitter Voltage V 12
ICCollector Current mA 50
PTPower Dissipation[2,3] mW 225
TjJunction Temperature °C 150
TSTG Storage Temperature °C - 65 to 150
Electrical Specifications, TA = 25°C
Symbol Parameters and Test Conditions Units Min Typ Max
hFE Forward Current Transfer Ratio VCE = 5 V - 30 150 270
IC = 5 mA
ICBO Collector Cutoff Current VCB = 3 V mA 0.2
IEBO Emitter Cutoff Current VEB = 1 V mA 1.0
Notes:
1. Operation of this device above any one
of these parameters may cause
permanent damage.
2. TMOUNTING SURFACE = 25°C.
3. Derate at 2.86 mW/°C for
TMOUNTING SURFACE > 72°C.
Thermal Resistance:[2]
θjc = 350°C/W
Characterization Information, TA = 25°C
Symbol Parameters and Test Conditions Units Min Typ
NF Noise Figure f = 0.9 GHz dB 1.0
f = 1.8 GHz 1.4
VCE = 5 V, IC = 5 mA f = 2.4 GHz 1.9
GAAssociated Gain f = 0.9 GHz dB 15.5
f = 1.8 GHz 10.5
VCE = 5 V, IC = 5 mA f = 2.4 GHz 9.0
P1dB Power at 1 dB Gain Compression (opt tuning) f = 0.9 GHz dBm 14.5
VCE = 5 V, IC = 25 mA
G1dB Gain at 1 dB Gain Compression (opt tuning) f = 0.9 GHz dB 14.5
VCE = 5 V, IC = 25 mA
IP3Output Third Order Intercept Point, f = 0.9 GHz dBm 25
VCE = 5 V, IC =25 mA (opt tuning)
|S21E|2Gain in 50 Ω system; VCE = 5 V, IC = 5 mA f = 0.9 GHz dB 12.5 13.25
f = 2.4 GHz 5.2
3
AT-41532 Typical Performance
0
4.0
3.5
2.5
2.0
3.0
0.5
1.5
1.0
0 2.01.0 3.0 4.0
NOISE FIGURE
(dB)
FREQUENCY (GHz)
Figure 1. AT-41532 Typical Noise
Figure vs. Frequency at 1 V, 1 mA.
2 mA
5 mA
0
3.5
1.5
2.0
0.5
1.0
0 2.01.0 3.0 4.0
NOISE FIGURE
(dB)
FREQUENCY (GHz)
Figure 2. AT-41532 Typical Noise
Figure vs. Frequency and Current at
2.7 V.
2.5
3.0 2 mA
5 mA
3.5
1.5
2.0
0.5
1.0
2.5
3.0
00 2.01.0 3.0 4.0
NOISE FIGURE
(dB)
FREQUENCY (GHz)
Figure 3. AT-41532 Typical Noise
Figure vs. Frequency and Current at
5V.
0
10
4
6
2
0.5 2.0 2.51.0 1.5 3.0 3.5 4.0
GAIN
(dB)
FREQUENCY (GHz)
Figure 4. AT-41532 Associated Gain
vs. Frequency at 1 V, 1 mA.
8
0
16
8
12
4
0.5 4.0
GAIN
(dB)
FREQUENCY (GHz)
Figure 5. AT-41532 Associated Gain
vs. Frequency and Current at 2.7 V.
FREQUENCY (GHz)
Figure 6. AT-41532 Associated Gain
vs. Frequency and Current at 5 V.
-10
20
15
10
-5
5
0
01510
52025
P
1 dB
(dBm)
COLLECTOR CURRENT (mA)
Figure 7. AT-41532 P
1
dB
vs.
Collector Current and Voltage
(valid up to 2.4 GHz).
2.0 2.51.0 1.5 3.0 3.5
2 mA
5 mA
2 mA
5 mA
0
16
8
12
4
0.5 4.0
GAIN
(dB)
2.0 2.51.0 1.5 3.0 3.5
2.7 V
5 V
0
9
8
7
2
1
3
6
4
5
01510
52025
G
1 dB
(dB)
COLLECTOR CURRENT (mA)
Figure 8. AT-41532 G
1
dB
vs.
Collector Current and Voltage
(valid up to 2.4 GHz).
2.7 V
5 V
4
AT-41532 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, V CE = 1 V, IC = 1 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.5 0.787 -75 8.79 2.750 125 -20.18 0.098 49 0.860 -22
0.75 0.697 -104 7.28 2.311 106 -18.74 0.116 38 0.785 -28
1.0 0.620 -128 5.84 1.960 90 -18.40 0.120 31 0.734 -32
1.5 0.554 -166 3.40 1.480 66 -18.80 0.115 30 0.678 -40
2.0 0.538 -164 1.52 1.191 48 -18.69 0.116 42 0.653 -50
3.0 0.543 118 -1.06 0.886 22 -13.30 0.216 60 0.620 -73
4.0 0.559 79 -2.61 0.741 5 -8.03 0.397 47 0.568 -102
5.0 0.561 47 -3.06 0.703 -7 -4.83 0.574 24 0.487 -137
6.0 0.545 28 -2.81 0.724 -20 -3.11 0.699 0 0.398 -180
7.0 0.534 14 -2.46 0.754 -35 -2.30 0.768 -23 0.362 130
8.0 0.544 2 -2.38 0.761 -52 -2.08 0.787 -44 0.407 88
9.0 0.563 -10 -2.49 0.751 -68 -2.18 0.778 -63 0.467 58
10.0 0.597 -23 -2.79 0.725 -84 -2.52 0.748 -80 0.523 35
11.0 0.655 -34 -3.39 0.677 -100 -3.15 0.696 -96 0.593 16
12.0 0.703 -42 -4.03 0.629 -112 -3.76 0.649 -110 0.665 -6
AT-41532 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, V CE = 1 V, IC = 1 mA
Freq. Fmin RnGassoc
GHz dB Mag Ang ohms dB
0.9 1.4 0.44 92 12.4 9.4
1.8 1.8 0.57 -183 3.0 7.6
2.0 1.9 0.60 -169 3.3 6.7
2.5 2.2 0.66 -140 10.1 5.7
3.0 2.6 0.71 -116 27.6 4.6
3.5 3.1 0.75 -95 59.9 3.5
4.0 3.6 0.77 -77 103.0 2.1
Γopt
Figure 9. Gain vs. Frequency at
1 V, 1 mA.
Note: dB(|S21|) = 20*log(|S21|)
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG = S21 (k± √k2–1)
S12
MSG = |S21|/|S12|
k = 1 – |S11|2 – |S22|2 + |D|2 ; D = S11S22 – S12S21
2*|S12||S21|
gmax
dB(S|2,1|)
k
-4
20
8
12
0
4
021 3456
GAIN
(dB)
0
1.50
0.75
1.25
1.00
0.25
0.50
k
FREQUENCY (GHz)
16
5
AT-32032 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 2.7 V, IC = 2 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.5 0.647 -82 13.45 4.702 119 -23.97 0.063 52 0.808 -21
0.75 0.532 -111 11.34 3.691 101 -22.60 0.074 46 0.737 -24
1.0 0.455 -134 9.54 3.000 88 -21.87 0.081 46 0.696 -27
1.5 0.394 -171 6.70 2.162 68 -20.48 0.095 52 0.658 -33
2.0 0.382 160 4.64 1.707 51 -18.50 0.119 59 0.643 -40
3.0 0.397 116 1.87 1.240 26 -13.56 0.210 61 0.627 -59
4.0 0.434 80 0.03 1.004 5 -9.26 0.344 50 0.604 -81
5.0 0.474 50 -1.20 0.871 -10 -6.05 0.498 32 0.556 -108
6.0 0.497 30 -1.81 0.812 -23 -3.84 0.643 11 0.470 -142
7.0 0.501 15 -1.88 0.805 -36 -2.40 0.759 -12 0.377 174
8.0 0.512 4 -1.89 0.804 -51 -1.73 0.819 -34 0.361 123
9.0 0.532 -9 -1.99 0.796 -67 -1.61 0.831 -55 0.411 82
10.0 0.569 -22 -2.31 0.767 -83 -1.86 0.808 -74 0.476 52
11.0 0.643 -32 -2.37 0.762 -97 -2.41 0.758 -93 0.562 27
12.0 0.687 -40 -3.51 0.668 -112 -3.10 0.700 -107 0.639 1
AT-32032 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, V CE = 2.7 V, IC = 2 mA
Freq. Fmin RnGassoc
GHz dB Mag Ang ohms dB
0.9 1.2 0.35 100 8.7 12.9
1.8 1.6 0.48 -179 3.3 9.7
2.0 1.7 0.51 -165 3.7 9.1
2.5 1.9 0.60 -136 8.9 8.0
3.0 2.2 0.65 -112 21.0 6.9
3.5 2.5 0.70 -91 42.0 5.9
4.0 2.9 0.74 -74 72.0 5.1
Γopt
gmax
dB(S|2,1|)
k
-4
20
8
12
0
4
021 3456
GAIN
(dB)
0
1.2
0.6
1
0.8
0.2
0.4
k
FREQUENCY (GHz)
16
Figure 10. Gain vs. Frequency at
2.7 V, 2 mA.
Note: dB(|S21|) = 20*log(|S21|)
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG = S21 (k± √k2–1)
S12
MSG = |S21|/|S12|
k = 1 – |S11|2 – |S22|2 + |D|2 ; D = S11S22 – S12S21
2*|S12||S21|
6
AT-41532 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 2. 7 V, IC = 5 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.5 0.400 -102 17.03 7.106 106 -25.97 0.050 59 0.671 -22
0.75 0.312 -130 14.15 5.101 91 -23.86 0.064 60 0.615 -24
1.0 0.270 -152 11.97 3.969 80 -22.09 0.079 61 0.588 -25
1.5 0.247 175 8.82 2.762 64 -19.10 0.111 63 0.564 -30
2.0 0.253 149 6.67 2.154 50 -16.60 0.148 62 0.553 -37
3.0 0.280 112 3.86 1.559 26 -12.48 0.238 55 0.535 -54
4.0 0.323 80 2.07 1.269 6 -9.19 0.347 43 0.514 -75
5.0 0.379 55 0.80 1.097 -12 -6.55 0.471 27 0.472 -99
6.0 0.434 38 -0.13 0.986 -28 -4.50 0.595 9 0.398 -130
7.0 0.480 24 -0.72 0.920 -43 -2.96 0.711 -11 0.309 -174
8.0 0.522 10 -1.20 0.871 -58 -2.07 0.788 -32 0.299 131
9.0 0.557 -5 -1.64 0.828 -72 -1.73 0.820 -53 0.366 87
10.0 0.595 -19 -2.17 0.779 -87 -1.86 0.808 -73 0.449 55
11.0 0.662 -29 -2.38 0.761 -99 -2.43 0.756 -92 0.533 27
12.0 0.709 -39 -3.56 0.664 -115 -3.03 0.705 -107 0.633 3
Figure 11. Gain vs. Frequency at
2.7 V, 5 mA.
Note: dB(|S21|) = 20*log(|S21|)
AT-41532 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, V CE = 2.7 V, IC = 5 mA
Freq. Fmin RnGassoc
GHz dB Mag Ang ohms dB
0.9 1.2 0.283 106 7.3 14.0
1.8 1.4 0.41 -165 3.9 10.7
2.0 1.5 0.44 -151 4.8 9.8
2.5 1.7 0.53 -126 9.2 8.5
3.0 1.9 0.60 -106 18.4 7.5
3.5 2.2 0.67 -86 35.0 6.6
4.0 2.5 0.71 -69 58.0 5.8
Γopt
gmax
dB(S|2,1|)
k
-5
25
15
20
5
0
10
0213
456
GAIN
(dB)
0
1.2
0.8
1
0.2
0.4
0.6
k
FREQUENCY (GHz)
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG = S21 (k± √k2–1)
S12
MSG = |S21|/|S12|
k = 1 – |S11|2 – |S22|2 + |D|2 ; D = S11S22 – S12S21
2*|S12||S21|
7
AT-41532 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 2. 7 V, I C = 10 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.5 0.243 -122 18.39 8.310 97 -26.90 0.045 68 0.586 -21
0.75 0.199 -149 15.19 5.751 85 -23.99 0.063 69 0.552 -21
1.0 0.184 -169 12.88 4.408 76 -21.74 0.082 69 0.536 -23
1.5 0.186 161 9.64 3.034 62 -18.35 0.121 67 0.520 -28
2.0 0.199 139 7.44 2.354 49 -15.79 0.162 63 0.510 -35
3.0 0.232 107 4.61 1.700 27 -11.93 0.253 52 0.491 -52
4.0 0.275 79 2.84 1.387 6 -9.00 0.355 39 0.467 -72
5.0 0.334 56 1.60 1.202 -12 -6.66 0.465 24 0.424 -95
6.0 0.399 41 0.66 1.079 -29 -4.79 0.576 7 0.349 -125
7.0 0.462 27 -0.02 0.997 -45 -3.30 0.684 -12 0.261 -167
8.0 0.521 14 -0.67 0.926 -60 -2.34 0.764 -32 0.251 134
9.0 0.566 -2 -1.26 0.865 -75 -1.89 0.805 -52 0.328 88
10.0 0.609 -18 -1.88 0.805 -90 -1.92 0.802 -72 0.422 56
11.0 0.678 -28 -2.97 0.711 -101 -2.32 0.766 -91 0.485 29
12.0 0.722 -39 -3.38 0.678 -116 -3.02 0.706 -106 0.620 3
Figure 12. Gain vs. Frequency at
2.7 V, 10 mA.
Note: dB(|S21|) = 20*log(|S21|)
gmax
dB(S|2,1|)
k
0
25
15
20
5
10
0213
456
GAIN
(dB)
0
1.25
0.75
1
0.25
0.5
k
FREQUENCY
(
GHz
)
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG = S21 (k± √k2–1)
S12
MSG = |S21|/|S12|
k = 1 – |S11|2 – |S22|2 + |D|2 ; D = S11S22 – S12S21
2*|S12||S21|
8
AT-41532 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, V CE = 5 V, IC = 2 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.5 0.659 -79 13.43 4.696 121 -25.16 0.055 53 0.836 -18
0.75 0.540 -108 11.41 3.720 103 -23.78 0.065 48 0.774 -22
1.0 0.456 -131 9.64 3.034 89 -23.06 0.070 48 0.738 -24
1.5 0.387 -169 6.81 2.190 69 -21.69 0.082 55 0.705 -30
2.0 0.371 162 4.74 1.726 53 -19.63 0.104 63 0.694 -37
3.0 0.387 116 1.91 1.247 27 -14.40 0.191 67 0.685 -54
4.0 0.428 79 0.01 1.001 7 -9.89 0.320 56 0.673 -75
5.0 0.472 49 -1.31 0.860 -8 -6.47 0.475 38 0.635 -100
6.0 0.494 28 -1.96 0.798 -20 -4.05 0.627 17 0.556 -131
7.0 0.490 13 -1.95 0.799 -33 -2.36 0.762 -5 0.448 -170
8.0 0.489 2 -1.81 0.812 -48 -1.51 0.840 -29 0.388 141
9.0 0.506 -10 -1.84 0.810 -64 -1.28 0.863 -51 0.408 96
10.0 0.541 -22 -2.07 0.788 -80 -1.51 0.841 -71 0.462 62
11.0 0.634 -33 -2.46 0.754 -94 -2.09 0.786 -90 0.539 35
12.0 0.670 -39 -3.23 0.689 -109 -2.75 0.729 -105 0.625 6
AT-41532 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, 5 V, IC = 2 mA
Freq. Fmin RnGassoc
GHz dB Mag Ang ohms dB
0.9 1.2 0.35 100 8.5 13.5
1.8 1.5 0.48 178 3.4 10.6
2.0 1.6 0.51 -166 3.7 9.7
2.5 1.9 0.60 -137 8.8 8.8
3.0 2.2 0.65 -112 21.7 7.8
3.5 2.5 0.70 -92 44.6 7.1
4.0 2.9 0.74 -73 79.5 6.0
Figure 13. Gain vs. Frequency at
5 V, 2 mA.
Note: dB(|S21|) = 20*log(|S21|)
Γopt
gmax
dB(S|2,1|)
k
-5
25
15
20
5
0
10
0213
456
GAIN
(dB)
0
1.2
0.8
1
0.2
0.4
0.6
k
FREQUENCY (GHz)
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG = S21 (k± √k2–1)
S12
MSG = |S21|/|S12|
k = 1 – |S11|2 – |S22|2 + |D|2 ; D = S11S22 – S12S21
2*|S12||S21|
9
AT-41532 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 5 V, IC = 5 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.5 0.402 -98 17.27 7.303 107 -27.15 0.044 60 0.713 -19
0.75 0.304 -124 14.42 5.260 92 -25.04 0.056 61 0.663 -21
1.0 0.255 -147 12.25 4.095 82 -23.26 0.069 63 0.640 -23
1.5 0.225 178 9.09 2.848 65 -20.23 0.097 66 0.621 -28
2.0 0.227 151 6.92 2.218 52 -17.66 0.131 65 0.613 -34
3.0 0.256 111 4.06 1.596 28 -13.38 0.214 59 0.603 -51
4.0 0.301 79 2.22 1.291 8 -9.92 0.319 48 0.592 -69
5.0 0.359 53 0.92 1.111 -10 -7.07 0.443 33 0.562 -92
6.0 0.414 36 -0.02 0.997 -26 -4.78 0.577 16 0.498 -120
7.0 0.457 22 -0.60 0.933 -40 -2.97 0.711 -4 0.401 -156
8.0 0.496 10 -1.00 0.891 -55 -1.84 0.809 -26 0.344 154
9.0 0.531 -4 -1.42 0.849 -70 -1.37 0.854 -49 0.374 105
10.0 0.573 -19 -1.89 0.805 -85 -1.44 0.847 -69 0.441 67
11.0 0.633 -28 -2.40 0.759 -95 -2.03 0.792 -88 0.516 38
12.0 0.696 -38 -3.32 0.682 -113 -2.63 0.739 -105 0.624 8
AT-41532 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, V CE = 5 V, IC = 5 mA
Freq. Fmin RnGassoc
GHz dB Mag Ang ohms dB
0.9 1.1 0.29 110 7.0 14.8
1.8 1.4 0.41 -167 3.9 11.3
2.0 1.5 0.44 -153 4.7 10.5
2.5 1.7 0.53 -127 9.3 9.3
3.0 1.9 0.60 -106 18.6 8.4
3.5 2.2 0.67 -86 36.8 7.5
4.0 2.4 0.71 -70 59.5 6.7
Figure 14. Gain vs. Frequency at
5 V, 5 mA.
Note: dB(|S21|) = 20*log(|S21|)
Γopt
gmax
dB(S|2,1|)
k
-5
25
15
20
5
0
10
0213
456
GAIN
(dB)
0
1.2
0.8
1
0.2
0.4
0.6
k
FREQUENCY (GHz)
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG = S21 (k± √k2–1)
S12
MSG = |S21|/|S12|
k = 1 – |S11|2 – |S22|2 + |D|2 ; D = S11S22 – S12S21
2*|S12||S21|
10
AT-41532 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, V CE = 5 V, IC = 10 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.5 0.239 -113 18.69 8.601 98 -28.05 0.040 69 0.641 -18
0.75 0.182 -140 15.51 5.966 86 -25.18 0.055 70 0.611 -19
1.0 0.160 -162 13.20 4.571 78 -22.94 0.071 71 0.597 -20
1.5 0.155 164 9.95 3.144 63 -19.50 0.106 69 0.585 -26
2.0 0.167 140 7.75 2.440 51 -16.89 0.143 66 0.578 -33
3.0 0.201 105 4.87 1.751 29 -12.90 0.226 57 0.566 -49
4.0 0.246 76 3.05 1.421 9 -9.80 0.324 45 0.553 -67
5.0 0.306 54 1.79 1.229 -10 -7.24 0.434 31 0.523 -88
6.0 0.369 40 0.86 1.105 -26 -5.11 0.555 14 0.461 -115
7.0 0.430 27 0.23 1.027 -42 -3.33 0.682 -5 0.366 -149
8.0 0.489 14 -0.35 0.961 -58 -2.11 0.785 -26 0.308 161
9.0 0.539 -1 -0.91 0.900 -73 -1.49 0.842 -47 0.342 110
10.0 0.588 -16 -1.58 0.834 -88 -1.45 0.846 -68 0.419 70
11.0 0.638 -29 -3.09 0.701 -102 -1.93 0.801 -88 0.501 40
12.0 0.713 -38 -3.24 0.689 -115 -2.58 0.743 -104 0.616 9
Figure 15. Gain vs. Frequency at
5 V, 10 mA.
Note: dB(|S21|) = 20*log(|S21|)
gmax
dB(S|2,1|)
k
0
25
15
20
5
10
0213
456
GAIN
(dB)
0
1.25
0.75
1
0.25
0.5
k
FREQUENCY (GHz)
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG = S21 (k± √k2–1)
S12
MSG = |S21|/|S12|
k = 1 – |S11|2 – |S22|2 + |D|2 ; D = S11S22 – S12S21
2*|S12||S21|
11
AT-41532 Application
Information
The AT-41532 is described in a
low noise amplifier for use in the
800 to 900 MHz frequency range.
The amplifier is designed for use
with .032 inch thickness FR-4
printed circuit board material.
900 MHz LNA Design
The amplifier is designed for a
VCE of 5 volts and IC of 5 mA. and
a minimum power supply voltage
of 5.25 volts. Higher power supply
voltages will require an additional
resistance to be inserted at the
power supply terminal. The
amplifier schematic is shown in
Figure 16.
A component list is shown in
Figure 17. The artwork including
component placement is shown
in Figure 18.
INPUT
Z
o
Z
o
C1
C4
C2
L2
R1 V
CC
= 5.25 V
R2 R4 C5
R5
L3 C4
C3
R6
Q1
L1
R3
OUTPUT
Figure 16. Schematic Diagram.
C1,C4 10 pF chip capacitor
C2 Open circuited stub – see
text
C3 2.7 pF chip capacitor
C5 1000 pF chip capacitor
L1 8 nH chip inductor
(Coilcraft 1008CS-080)
L2 Optional (see R1)
L3 15 nH chip inductor
(Coilcraft 1008CS-150)
Q1 Agilent
AT-41532 Silicon Bipolar
Transistor
R1 10K Ω chip resistor (may
want to substitute a
180 nH chip inductor and
50 Ω resistor for lower
noise figure , better low
freq stability, then
readjust R2)
R2 48 K Ω chip resistor
(adjust for rated Ic)
R3 3.32 K Ω chip resistor
R4 3.32 K Ω chip resistor
R5 51.1 Ω chip resistor
R6 1.1K Ω chip resistor (see
text)
Zo50 Ω microstripline
Figure 17. Component Parts List.
IN OUT
Vcc
AT-3XX32
AT-4XX32
01/98 AJW
.062 FR-4
Figure 18. 1X Artwork showing
Component Placement.
The input matching network uses
a series inductor for the noise
match. Some fine tuning for
lowest noise figure and improved
input VSWR can be accomplished
by adding capacitance at C2. The
shunt C is accomplished with an
open circuited stub while a chip
inductor is used for the series
element. The output impedance
matching network is a high pass
structure consisting of a series
capacitor and shunt inductor. A
resistor is paralleled across the
shunt inductor to enhance broad
band stability through 10 GHz.
Bias insertion is accomplished
through the use of the shunt
inductor appropriately bypassed.
Surface mount Coilcraft induc-
tors were chosen for their small
size.
Biasing
The bias network is designed for
a nominal power supply voltage
of 5.25 volts. Resistors R1 and R2
are used to adjust collector
current. Resistor R4 can be
attached to the junction of R5 and
C5 to improve bias point stability.
Performance
The measured gain of the com-
pleted amplifier is shown in
Figure 19. The gain varies
from 14 to 15 dB over the 800 to
900 MHz frequency range. Noise
figure versus frequency is shown
in Figure 20. Best performance
occurs at 850 MHz providing a
near 1 dB noise figure.
12
Measured input and output return
loss is shown in Figure 21. The
input return loss is 10 dB at
850 MHz and can be improved
with slight tuning at C2. Output
return loss was measured at
almost 10 dB at 850 MHz.
6
16
8
10
12
14
500 700600 800 900 1000
GAIN
(dB)
FREQUENCY (MHz)
Figure 19. Gain vs Frequency.
1
1.6
1.1
1.2
1.3
1.4
500 700600 800 900 1000
NOISE FIGURE
(dB)
FREQUENCY (MHz)
1.5
Figure 20. Noise Figure vs Frequency.
-14
0
Input
Output
-10
-12
-8
-4
500 700600 800 900 1000
RETURN LOSS
(dB)
FREQUENCY (MHz)
-6
-2
Figure 21. Input/Output Return Loss.
There is considerable tuning
interaction between input and
output matching networks in any
single stage amplifier. Having a
somewhat better input return loss
coincident with low noise figure
may necessitate a compromise in
output return loss.
Output intercept point, IP3, was
measured at 850 MHz to be
+12 dBm. Removing the 1.1 KΩ
resistor at R6 increases IP3 to
+13.6 dBm. Resistor R6 was
originally added to enhance
stability; caution is urged when
removing this resistor or increas-
ing its value without careful
analysis. Another alternative to
the shunt resistor R6 would be to
incorporate a resistor in series
with the transistor collector lead.
This resistor would be in the 10 to
27 Ω range and has similar effects
on circuit stability. A third
alternative is to re-optimize the
output match for power as
opposed to matching for lowest
output VSWR. This may make the
output return loss less than 10 dB
but it would enhance power
output.
Modifications to Original
Demo Board
The original demo board dated
01/98 requires some modification
to work as described in this
application note. The modifica-
tion is to add resistor R6 in series
with the collector lead. This is
accomplished by cutting the etch
at the output of Q1 such that
resistor R6 can be placed on the
circuit board as shown in
Figure 17. Inductor L3 will then
have be placed at a 90 degree
angle with respect to its original
intended location. L3 is then
connected to the junction of R6
and L4 with a small piece of wire
or etch.
Using the AT-41532 at Other
Frequencies
The demo board and design
techniques presented here can be
used to build low noise amplifiers
for other frequencies in the VHF
through 1.9 GHz frequency range.
13
Package Dimensions
SOT-323 Plastic Package
2.20 (0.087)
2.00 (0.079) 1.35 (0.053)
1.15 (0.045)
1.30 (0.051)
REF.
0.650 BSC (0.025)
2.20 (0.087)
1.80 (0.071)
0.10 (0.004)
0.00 (0.00)
0.25 (0.010)
0.15 (0.006) 1.00 (0.039)
0.80 (0.031) 0.20 (0.008)
0.10 (0.004)
0.30 (0.012)
0.10 (0.004)
0.30 REF.
10°
0.425 (0.017)
TYP.
Ordering Information
Part Number Increment Comments
AT-41532-BLK 100 Bulk
AT-41532-TR1 3000 7" Reel
AT-41532-TR2 10000 13" Reel
14
Tape Dimensions and Product Orientation
For Outline SOT-323 (SC-70 3 Lead)
P
P
0
P
2
FW
C
D
1
D
E
A
0
8° MAX.
t
1
(CARRIER TAPE THICKNESS) T
t
(COVER TAPE THICKNESS)
5° MAX.
B
0
K
0
DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A
0
B
0
K
0
P
D
1
2.24 ± 0.10
2.34 ± 0.10
1.22 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.088 ± 0.004
0.092 ± 0.004
0.048 ± 0.004
0.157 ± 0.004
0.039 + 0.010
CAVITY
DIAMETER
PITCH
POSITION
D
P
0
E
1.55 ± 0.05
4.00 ± 0.10
1.75 ± 0.10
0.061 ± 0.002
0.157 ± 0.004
0.069 ± 0.004
PERFORATION
WIDTH
THICKNESS W
t
1
8.00 ± 0.30
0.255 ± 0.013 0.315 ± 0.012
0.010 ± 0.0005
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P
2
3.50 ± 0.05
2.00 ± 0.05
0.138 ± 0.002
0.079 ± 0.002
DISTANCE
WIDTH
TAPE THICKNESS C
T
t
5.4 ± 0.10
0.062 ± 0.001 0.205 ± 0.004
0.0025 ± 0.00004
COVER TAPE
www.semiconductor.agilent.com
Data subject to change.
Copyright © 1999 Agilent Technologies
5965-6167E (11/99)
