10
CHARACTERISTICS AND ABSOLUTE MAXIMUM RATING BY MATERIAL
nPhoto Transistor (Through-Hole Shape)
l
Part Number
Prefix Collector
Dissipation
Pd
Collector-Emitter
Breakdown
Voltage
VCEO
Emitter-Collector
Breakdown
Voltage
VECO
Collector
Current
IC
Operating
Temp.
Topr
Storage
Temp.
Tstg
Wavelength
of Peak
Sensitivity
lp TYP
Dark
Current
ICEO
Response Time
tr • tf
Type MAX. ICEO VCE ICRL
502
PS
Unit
100
60
mW
30
30
V
5
5
V
30
20
mA
-30~+85
-30~+85
°C
-30~+100
-30~+100
°C
0.2
0.2
mA
10
10
V
TYP.
5
5
msec
10
10
V
2
2
mA
100
100
W
880
880
nm
Ta=25°C (Excl: Topr and Tstg)
Ta=25°C (Excl: Topr and Tstg)
Absolute Maximum Ratings Electro-Optical Characteristics
nPhoto Transistor (SMT Shape)
l
Part Number
Prefix Collector
Dissipation
Pd
Collector-Emitter
Breakdown
Voltage
VCEO
Emitter-Collector
Breakdown
Voltage
VECO
Collector
Current
IC
Operating
Temp.
Topr
Storage
Temp.
Tstg
Wavelength
of Peak
Sensitivity
lp TYP
Dark
Current
ICEO
Response Time
tr • tf
MAX. ICEO VCE ICRL
PS
Unit
Absolute Maximum Ratings Electro-Optical Characteristics
75
TYP.
mW
30
V
5
V
20
mA
-30~+85
°C
-30~+90
°C
0.1
mA
10
V
9
msec
10
V
2
mA
100
W
880
nm
nPin Photo Diode (Through-hole Shape)
l
Part Number
Prefix Power
Dissipation
Pd
Reverse
Voltage
VR
Operating
Temp.
Topr
Storage
Temp
Tstg
Wavelength
of Peak
Sensitivity
lp
PP
Unit
Absolute Maximum Ratings Electro-Optical Characteristics
Photo Current
IP
VRTYP. Ee
Response Time
tr • tf
VRTYP. RL
Capacitance
CT
VRTYP. f
Dark Current
ID
VRMAX. VRTYP.
V
nm
VnAMHzV
pFWV
nsec
mW/cm2
V
mA°CVmW
nPin Photo Diode (SMT Shape)
l
Part Number
Prefix Power
Dissipation
Pd
Reverse
Voltage
VR
Operating
Temp.
Topr
Storage
Temp
Tstg
Wavelength
of Peak
Sensitivity
lp
PP
Unit
Absolute Maximum Ratings Electro-Optical Characteristics
Photo Current
IP
VRTYP. Eev
Response Time
tr • tf
VRTYP. RL
Capacitance
CT
VRTYP. f
Dark Current
ID
VRMAX. VRTYP.
V
nm
VnAMHzV
pFWV
nsec
mW/cm2
V
mA°CVmW
30 15 -30~+85 -30~+90 4 5 5 50 10 1000 3 10 1 10 10 950 0
Ta=25°C (Excl: Topr and Tstg)
vA standard tungsten filament lamp with color temperature 2856K is used.
nSpectral Distribution
1.0
0.5
400 450 500 550 600 650 700 750 800 850 900 950 1000 1050
FH/KR NR DR/DNF/DNH DNK DNP
AN
Wavelength l (nm)
Emitter:
Relative Radiant Intensity
Detector:
Relative Spectral Sensitivity
PP
PS
PP/PS
w/ visible radiation
cut filter
Specifications vary according to a part type
15
SMT SHAPE - PHOTO TRANSISTOR AND PIN PHOTO DIODE
nPhoto Transistor
Unit nm mA V ms
mW/cm
2
Part No. Features
Wavelength
of
Peak Sensitivity
lP
TYP. VCE
Spatial Distribution
(The typical distribution example of
each shape is shown below)
TYP. TYP.
Shape fig.
MIN. Ee
Photo Current
IC
Response
Time
tr • tf
v
90
60
30
0
30
60
90
0.5
90
60
30
0
30
60
90
0.5
90
60
30
0
30
60
90
0.5
90
30
0
30
60
60
90
0.5
90
60
30
0
30
60
90
0.5
90
60
30
0
30
60
90
0.5
PS1101WA
PS1101RA
PS1191RA
PS1192FA
PS1102HA
PS1192HA
Reverse Mount
Reverse Mount
with visible radiation cut
filter under 700nm
Side view package
with visible radiation cut
filter under 700nm
Compact size
Compact size
with visible radiation cut
filter under 700nm
880
880
900
900
880
900
0.7
0.4
0.4
1.4
0.4
0.4
3.5
2.0
2.0
7.0
2.0
2.0
5
5
5
5
5
5
5
5
5
5
5
5
8/9
8/9
8/9
8/9
8/9
8/9
1
2
2
3
4
4
nPin Photo Diode
Unit nm mA V ns
mW/cm
2
Part No. Features
Wavelength
of
Peak Sensitivity
lP
TYP. VCE
Spatial Distribution
(The typical distribution example of
each shape is shown below)
TYP.
Shape fig.
MIN. Ee
Photo Current
IC
TYP.
Response
Time
tr tf
90
60
30
0
30
60
0.5
90
PP1101W 950 2.0 4.0 5 5 50 5
vIc=2mA, VCE=10V, RL=100W
vAll above products contain no lead
Ta= 25°C
Ta= 25°C
vProduct contains no lead
16
SMT SHAPE - PHOTO TRANSISTOR AND PIN PHOTO DIODE
nPackage Dimensions unit: mm
2
3
Emitter Mark Emitter
Collector
1.5
0.9
2
1.5
0.6
1
Detector Chip
(0.9)
(5)
(2)
Tolerance: ±0.2
fig. 1
0.75
Collector
Polarity Mark
Emitter
Cathode Mark
3.2
1.6 0.8 0.3
1.4
0.5
0.5
(1.5)
(1.6)
(2.1)
(2.3)
(1.5)
Hole
Detector Chip
Tolerance: ±0.1
fig. 2
R0.9
(2)
2.5±0.2
0.6±0.2
3±0.2
(0.25) (0.25)
0.3±0.15 0.3±0.15
0.5±0.15
1±0.15
0.25±0.150.25±0.15
(0.9)
(0.2)
(1.1)
(2)
(5)
Emitter
Collector
(0.9)
fig. 3
Collector
Emitter
Polarity Mark
Emitter Mark
2±0.1
1.25
±
0.1
0.3±0.1
1.3±0.1
1.2±0.1
0.35±0.1
0.35±0.1
(1.1)
(3.4)
(1.3)
Detector Chip
0.8 +0.1
-0.05
fig. 4
Recommended Soldering Pattern
Recommended Soldering Pattern
Recommended Soldering Pattern
Recommended Soldering Pattern
PCB Warpage Direction
PCB Warpage Direction
PCB Warpage Direction
PCB Warpage Direction
17
SMT SHAPE - PHOTO TRANSISTOR AND PIN PHOTO DIODE
nPackage Dimensions
Tolerance: ±0.2
2
3
Anode Mark
1.5
0.9
2
1.5
0.6
1
Detector Chip
(0.9)
(5)
(2)
fig. 5
unit: mm
1101W-1102W
1105W-RR
Center
Hole
(1.8)
(3.5)
(0.5)
Center
Hole
1.75 +0.1
8+0.2
2+0.05
4+0.1
4+0.1
f 1.5
+0.1
0
3.5+0.05
)
(1.45
(0.2)
f 1.1)
(
Direction to pull
1101RA-1191RA
(0.2)
(2.25)
(f 1.0)
Center
Hole
(1.45)
(1)
4+0.1
f 1.5
+0.1
0
8+0.2
2+0.05
4+0.1
3.5+0.05 1.75+0.1
Direction to pull
Center Hole
1102HA-1192HA
Quantity per Reel: 2,500 Quantity per Reel: 3,000
Quantity per Reel: 3,000 Quantity per Reel: 4,000
nTaping Specifications unit: mm
(0.2)
(1.7)
(1.8)
(3.35)
Center
Hole
f 1.1)
(
4+0.1
1.75+0.1
f 1.5+0.1
0
8+0.2
2+0.05
4+0.1
3.5+0.05
Direction to pull
4+ 0.1
4+ 0.1
3.5 + 0.05 1.75 + 0.1
8 + 0.2
2 + 0.05
Direction to pull
(2.8)
(0.2)
(1.4)
(f1.1)
(3.35)
f1.5+0.1
0
Center Hole
Center Hole
f 21+0.8
9+0.3
11.4+1
f 13+0.2
f 180+0
3
f 60 +1
-0
f 13+0.2
2+0.5
nReel Specifications unit: mm
1101WA
Recommended Soldering PatternRecommended Soldering Pattern
1192FA
PCB Warpage Direction
24
THROUGH-HOLE SHAPE - PIN PHOTO DIODE
nPIN Photo Diode
Unit CCmA V
mW/cm2
nsec V WpF V nA V nm A/W
Part No. Features Photo Current
I
P
Absolute
Max. Rating
Operating
Temp.
Wavelength of
Peak Sensitivity
Sensitivity
Storage
Temp.
Capacitance
CT Dark Current
I D
VRVR
Spatial Distribution
(The typical distribution example of
each shape is shown below)
TYP.
Shape
fig.
Ee TYP. TYP.MAX.
Response Time
tr tf
VRTYP.Ts tg.Topr. RLVRTYP.
l p
s
Electro-Optical Characteristics
v1
90
60
30
0
30
60
90
0.5
X
Y
Y
X
v2
v3
90
60
30
0
30
60
90
0.5
0.5
90
60
30
0
30
60
90
0.5
90
60
30
0
30
60
90
90
60
30
0
30
60
90
0.5
90
60
30
0
30
60
90
X
Y
0.5
Y
X
60
0
30
60
9090
30
0.5
90
60
30
0
30
60
90
0.5
90
60
30
0
30
60
90
0.5
90
60
30
0
30
60
90
0.5
90
60
30
0
30
60
90
0.5
PP403
PP508
PP508-1
PP601
PP601-1
PP601-2
PP602
PP701
PP703
PP704
PP801
Flat lens/
f3 package
Side view
package
Side view
package with
visible radiation
cut filter under
700nm
Double-end
package
Double-end
package with
visible radiation
cut filter under
700nm
Double-end
package with
visible radiation
cut filter under
800nm
Flat lens
High photo
current
Big lens
High photo
current
Big lens
High photo
current
Narrow
distribution
Big lens
High photo
current
Wide
distribution
with convex
type lens
-30
~
+85
-30
~
+85
-30
~
+85
-30
~
+85
-30
~
+85
-30
~
+85
-30
~
+85
-20
~
+60
-20
~
+70
-20
~
+70
-20
~
+70
1.5
7.5
5.5
6.0
4.8
3.0
440
1100
1100
700
190
5
5
5
5
5
5
12
12
12
12
12
20
50
50
100
1
00
100
200
200
150
150
150
10
10
10
10
10
10
12
12
12
12
12
1000
1000
1000
1000
1
000
1000
1000
1000
1000
1000
1000
7
11
11
13
13
13
60
60
35
35
35
10
10
10
10
10
10
12
12
12
12
12
10
20
20
30
30
30
100
20
10
10
20
0.64
0.64
0.64
0.64
0.64
0.64
0.64
0.64
0.64
0.64
0.64
1
2
2
3
3
3
4
5
6
7
8
vIf=1MHz v2 VR=0V v3 VR=5V
-30
~
+100
-30
~
+100
-30
~
+100
-30
~
+100
-30
~
+100
-30
~
+100
-30
~
+100
-20
~
+60
-20
~
+70
-20
~
+70
-20
~
+70
0.5
0.5
0.5
0.5
0.5
0.5
5
5
5
5
5
950
950
950
950
950
950
950
950
950
950
950
10
10
10
10
10
10
12
12
12
12
12
Ta= 25°C
vAll above products contain no lead
* Lead-free soldering compatible product
*
25
THROUGH-HOLE SHAPE - PIN PHOTO DIODE
nPackage Dimensions
4.1±0.2
27.5MIN.
1MAX.
(2.5)
0.5±0.2
5±0.2
7.5±0.2
10.5±0.3
25.5MIN.
2.05±0.2
3.3±0.2
0.7MAX.
1±0.2
1±0.2
3MIN.
0.5MAX.
0.5
R7
(2.54) (5.08)
(2.45)
(
7.62
)
1 2 3
6 5 4
o
/ 14±0.3
o
/ 14.6±0.3
1,6 2,3,4,5
9±0.3
o
/ 15±0.3
6.5±0.3
0.25
fig. 1
fig. 4
fig. 2
fig. 5
fig. 3
fig. 6
unit: mm
0.5
R0.2
o
/ 10.2±0.3
(2.54) (2.54)
(0.71)
(7.57)
1 2 3
6 5 4
1MAX.
4MIN.
4.5±0.3
o
/ 11.8±0.3
(3.6)
0.25
1,6 2,3,4,5
fig. 7 fig. 8