CHARACTERISTICS AND ABSOLUTE MAXIMUM RATING BY MATERIAL n Photo Transistor (Through-Hole Shape) Absolute Maximum Ratings Collector-Emitter Emitter-Collector Breakdown Collector Breakdown Collector Operating Voltage Dissipation Voltage Current Temp. Part Number Prefix l Dark Current ICEO MAX. ICEO l tr * tf VCE IC VECO IC Topr Tstg RL lp TYP 100 30 5 30 -30~+85 -30~+100 0.2 10 5 10 2 100 880 60 30 5 20 -30~+85 -30~+100 0.2 10 5 10 2 100 880 mW V V mA C C mA V msec V mA W nm n Photo Transistor (SMT Shape) Part Number Prefix Wavelength of Peak Sensitivity Response Time VCEO 502 Unit Storage Temp. Pd Type PS Ta=25C (Excl: Topr and Tstg) Electro-Optical Characteristics Absolute Maximum Ratings Collector-Emitter Emitter-Collector Breakdown Collector Breakdown Collector Operating Voltage Dissipation Voltage Current Temp. TYP. Ta=25C (Excl: Topr and Tstg) Electro-Optical Characteristics Storage Temp. Dark Current Wavelength of Peak Sensitivity Response Time ICEO MAX. ICEO tr * tf VCE IC Pd VCEO VECO IC Topr Tstg PS 75 30 5 20 -30~+85 -30~+90 0.1 10 9 10 Unit mW V V mA C C mA V msec V TYP. RL lp TYP 2 100 880 mA W nm n Pin Photo Diode (Through-hole Shape) Absolute Maximum Ratings Part Number Prefix Electro-Optical Characteristics Power Dissipation Reverse Voltage Operating Temp. Storage Temp Pd VR Topr Tstg TYP. VR Ee Unit mW V mA C V TYP. VR mW/cm2 nsec n Pin Photo Diode (SMT Shape) Absolute Maximum Ratings Part Number Prefix l Response Time tr * tf Capacitance CT RL Dark Current ID Wavelength of Peak Sensitivity lp TYP. VR f MAX. VR TYP. VR pF V MHz nA V nm V Specifications vary according to a part type PP l Photo Current IP W V Ta=25C (Excl: Topr and Tstg) Electro-Optical Characteristics Wavelength of Peak Response Time Capacitance Dark Current Sensitivity tr * tf CT ID lp Power Dissipation Reverse Voltage Operating Temp. Storage Temp Pd VR Topr Tstg TYP. VR Eev TYP. VR RL TYP. VR f MAX. VR TYP. VR PP 30 15 -30~+85 -30~+90 4 5 5 50 10 1000 3 10 1 10 10 950 0 Unit mW V mA V V W pF V MHz nA V nm V C Photo Current IP mW/cm2 nsec vA standard tungsten filament lamp with color temperature 2856K is used. n Spectral Distribution DR/DNF/DNH FH/KR NR DNK AN DNP 1.0 Emitter: Relative Radiant Intensity Detector: Relative Spectral Sensitivity PP PS 0.5 400 450 500 550 600 650 700 750 800 Wavelength l (nm) 10 850 900 950 1000 1050 PP/PS w/ visible radiation cut filter SMT SHAPE - PHOTO TRANSISTOR AND PIN PHOTO DIODE n Photo Transistor Shape Part No. Ta= 25C Features v Wavelength of Peak Sensitivity l P TYP. MIN. TYP. VCE Spatial Distribution (The typical distribution example of each shape is shown below) Response Time tr * tf TYP. Photo Current IC Ee fig. 0 30 30 PS1101WA -- 880 0.7 3.5 5 5 8/9 60 1 60 0.5 90 90 0 30 30 PS1101RA Reverse Mount 880 0.4 2.0 5 5 8/9 60 2 60 0.5 90 90 0 30 30 PS1191RA Reverse Mount with visible radiation cut filter under 700nm 900 0.4 2.0 5 5 8/9 60 2 60 0.5 90 90 0 30 PS1192FA Side view package with visible radiation cut filter under 700nm 900 1.4 7.0 5 5 8/9 60 30 60 0.5 90 3 90 0 30 PS1102HA Compact size 880 0.4 2.0 5 5 8/9 60 30 4 60 0.5 90 90 0 30 PS1192HA Compact size with visible radiation cut filter under 700nm 900 0.4 2.0 5 5 V mW/cm 8/9 60 30 90 Unit nm mA 2 4 60 0.5 90 ms v Ic=2mA, VCE=10V, RL=100W v All above products contain no lead n Pin Photo Diode Shape Part No. Ta= 25C Features Wavelength of Peak Sensitivity l P TYP. Response Time tr * tf TYP. Photo Current IC MIN. TYP. VCE Ee Spatial Distribution (The typical distribution example of each shape is shown below) fig. 0 30 PP1101W -- 950 2.0 4.0 5 5 V mW/cm 50 60 90 Unit nm mA 2 30 0.5 5 60 90 ns v Product contains no lead 15 SMT SHAPE - PHOTO TRANSISTOR AND PIN PHOTO DIODE n Package Dimensions unit: mm fig. 1 Recommended Soldering Pattern Collector Emitter Mark (2) 1.5 0.6 1.5 (5) 2 3 0.9 (0.9) 2 1 Detector Chip Emitter PCB Warpage Direction Tolerance: 0.2 fig. 2 Recommended Soldering Pattern 0.8 0.3 Collector (2.3) 0.5 0.75 1.6 (1.6) Detector Chip Hole (1.5) 0.5 Cathode Mark (2.1) 1.4 3.2 (1.5) Polarity Mark Emitter PCB Warpage Direction Tolerance: 0.1 fig. 3 10.15 Collector 0.60.2 Recommended Soldering Pattern (0.2) (2) (0.9) (5) (2) 30.2 (0.9) (0.25) 0.30.15 2.50.2 0.250.15 0.50.15 Emitter 0.250.15 0.30.15 (0.25) R0.9 (1.1) PCB Warpage Direction fig. 4 0.8 +0.1 -0.05 0.30.1 Detector Chip 0.350.1 Recommended Soldering Pattern 1.250.1 (1.3) Collector (3.4) (1.1) 1.20.1 0.350.1 Emitter Mark 1.30.1 20.1 Polarity Mark Emitter PCB Warpage Direction 16 SMT SHAPE - PHOTO TRANSISTOR AND PIN PHOTO DIODE n Package Dimensions unit: mm fig. 5 Recommended Soldering Pattern (2) 1.5 0.6 1.5 (5) 2 3 0.9 (0.9) 2 1 Detector Chip Anode Mark PCB Warpage Direction Tolerance: 0.2 n Taping Specifications unit: mm 1101RA-1191RA 4+0.1 f 1.5 +0.1 0 (1.8) 4+ 0.1 (0.2) f 1.75 + 0.1 1.75+ 0.1 1101WA 1101W-1102W (1.8) 1.5 +0.1 0 (0.2) 2+0.05 Center Hole Center Hole 4+0.1 (3.5) 8+0.2 ( f 1.1) (1.7) (0.5) 3.5 +0.0 5 3.5 +0.05 ( f 1.1) (3.35) 8+0.2 Center Hole 2 +0.05 (1.45) 4 +0.1 Direction to pull Direction to pull Quantity per Reel: 2,500 Quantity per Reel: 3,000 1.75 +0.1 1102HA-1192HA 1.75 + 0.1 1192FA 1105W-RR 4+ 0.1 (2.8) f1.5 +0.1 0 4+0.1 f 1.5 +0.1 0 (1.45) (0.2) 4+ 0.1 Center Hole (f 1.0) (1.4) Center Hole 2+0.05 (2.25) 2 + 0.05 (f1.1) Center Hole 8+0.2 (3.35) Center Hole 3.5+0.05 3.5 + 0.05 8 + 0.2 (0.2) (1) 4+0.1 Direction to pull Direction to pull Quantity per Reel: 3,000 Quantity per Reel: 4,000 n Reel Specifications f 21+0.8 unit: mm 2+0.5 +1 f 60 -0 f 13+0.2 f 13+0.2 9+0.3 11.4+1 +0 f 180 3 17 THROUGH-HOLE SHAPE - PIN PHOTO DIODE n PIN Photo Diode Ta= 25C Photo Current Response Time IP Topr. Ts tg. TYP. VR tr Ee TYP. * VR tf Capacitance Dark Current v1 RL TYP. CT ID V R MAX. V R v2 lp Sensitivity Shape Electro-Optical Characteristics Wavelength of Peak Sensitivity Features Storage Temp. Part No. Operating Temp. Absolute Max. Rating Spatial Distribution (The typical distribution example of each shape is shown below) v3 s fig. TYP. TYP. 0 * 30 Flat lens/ f 3 package PP403 -30 -30 ~ 1.5 ~ +85 +100 5 0.5 20 10 1000 7 10 10 10 950 0.64 60 30 1 60 0.5 90 90 0 30 Side view package PP508 -30 -30 ~ 7.5 ~ +85 +100 5 0.5 50 10 1000 11 10 20 10 950 0.64 60 30 2 60 0.5 90 90 0 PP508-1 Side view package with visible radiation cut filter under 700nm 30 -30 -30 ~ 5.5 ~ +85 +100 5 0.5 50 10 1000 11 10 20 10 950 0.64 60 30 2 60 0.5 90 90 0 30 Double-end package PP601 -30 -30 ~ 6.0 ~ +85 +100 5 0.5 100 10 1000 13 10 30 10 950 0.64 60 30 3 60 0.5 90 90 0 PP601-1 Double-end package with visible radiation cut filter under 700nm PP601-2 Double-end package with visible radiation cut filter under 800nm 30 -30 -30 ~ 4.8 ~ +85 +100 5 0.5 100 10 1000 13 10 30 10 950 0.64 60 30 3 60 0.5 90 90 0 30 -30 -30 ~ 3.0 ~ +85 +100 5 0.5 100 10 1000 13 10 30 10 950 0.64 60 30 3 60 0.5 90 90 0 30 PP602 Flat lens High photo current -30 -30 ~ 440 12 ~ +85 +100 5 200 12 1000 60 12 100 12 950 0.64 60 30 4 60 0.5 90 90 0 Y 30 X PP701 Big lens High photo current -20 -20 ~ 1100 12 ~ +60 +60 30 Y X 5 200 12 1000 60 12 20 12 950 0.64 60 5 60 0.5 90 90 0 PP703 Big lens High photo current Narrow distribution 30 -20 -20 ~ 1100 12 ~ +70 +70 5 150 12 1000 35 12 10 12 950 0.64 60 30 90 90 0 Y 30 X PP704 Big lens High photo current -20 -20 ~ 700 12 ~ +70 +70 6 60 0.5 X 30 Y 5 150 12 1000 35 12 10 12 950 0.64 60 7 60 0.5 90 90 0 PP801 Wide distribution with convex type lens 30 -20 -20 ~ 190 12 ~ +70 +70 5 150 12 1000 35 12 20 12 950 0.64 V nA V 60 90 Unit v All above products contain no lead * Lead-free soldering compatible product 24 C C mA V 2 mW/cm nsec V W pF 30 0.5 8 60 90 nm A/W v I f=1MHz v2 VR=0V v 3 VR=5V THROUGH-HOLE SHAPE - PIN PHOTO DIODE n Package Dimensions fig. 1 unit: mm fig. 2 o / 3.80.2 fig. 3 o / 30.2 0.250.1 3.810.1 1.250.1 0.750.1 (2.5) 3.30.2 2.050.2 (2.5) fig. 5 0~3 30.1 2 0.50.2 0.40.1 fig. 4 3.10.1 6.10.1 2 10.1 0.7MAX. 10.1 Cathode mark o / 1.0 Hole 7.620.1 10.50.3 10.2 1.250.1 0.750.1 4.60.1 25.5MIN. 10.2 1MAX. 27.5MIN. 0.6MAX. 15.5MIN. 17.5MIN. 1MAX. 1.50.2 50.2 7.50.2 40.2 4.10.2 2 5MIN. 0~3 0.60.1 fig. 6 11.50.3 7.620.3 3 (1.9) (2.54) 1,6 65 12 4 3 (2.45) (2.54) (5.08) fig. 7 1,6 0.25 0.5 654 123 2,3,4,5 (2.54) (5.08) 1,6 2,3,4,5 (0.71) (2.54) fig. 8 4.50.3 150.3 (7.57) 6 54 1 23 (2.54) 1MAX. 3MIN 0.5 (0.71) (2.54) 0.5 6 5 4 1,6 o / 11.80.3 0.25 40.3 4MIN. 90.3 (7.57) R7 R0.2 0.25 R5.5 (10.2) 14.750.3 140.3 (3.6) o / 10.20.3 110.3 130.3 12.50.3 80.3 0.5MAX o / 14.60.3 0.5MAX. 3MIN. 0.5 2,3,4,5 6.50.3 3MIN. 0.25 R7 (7.62) 4 1 2 0.5MAX. 6 5 o / 14.60.3 R7 2.50.3 4MIN. 0.5MAX. 0.5 o / 140.3 o / 150.3 0.25 R0.5 90.3 4-R0.5 90.3 6.50.3 (7.57) 8.80.3 90.3 o / 140.3 o / 150.3 LED chip 2,3,4,5 1 2 3 1,6 2,3,4,5 (0.71) (2.54) (2.54) 25